JP2007511090A5 - - Google Patents

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Publication number
JP2007511090A5
JP2007511090A5 JP2006539531A JP2006539531A JP2007511090A5 JP 2007511090 A5 JP2007511090 A5 JP 2007511090A5 JP 2006539531 A JP2006539531 A JP 2006539531A JP 2006539531 A JP2006539531 A JP 2006539531A JP 2007511090 A5 JP2007511090 A5 JP 2007511090A5
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Japan
Prior art keywords
gate structure
sidewall
gate
forming
extending
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Pending
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JP2006539531A
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JP2007511090A (ja
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Priority claimed from US10/705,317 external-priority patent/US7098502B2/en
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Publication of JP2007511090A publication Critical patent/JP2007511090A/ja
Publication of JP2007511090A5 publication Critical patent/JP2007511090A5/ja
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Claims (2)

  1. 水平方向に延伸する上面と、垂直方向に延伸する第1サイドウォールと、該第1サイドウォールに対向し、垂直方向に延伸する第2サイドウォールとを有した半導体チャネル構造を形成する工程と、
    前記第1サイドウォールに水平方向にて隣接して設けられるとともに第1サイドウォールから沿うようにして延伸している第1ゲート構造及び、前記第2サイドウォールに水平方向にて隣接して設けられるとともに第2サイドウォールから沿うようにして延伸している第2ゲート構造を形成する工程と、
    第1ゲート構造、第2ゲート構造、及び第3ゲート構造が互いに物理的に離間しているように、第3ゲート構造を前記水平方向に延伸する上面の上方に、かつ前記上面のほぼ全体にわたって形成する工程と、前記第1ゲート構造及び第2ゲート構造を形成する工程は、ゲート材料層を前記第3ゲート構造及び基板の上に堆積させる工程と、前記ゲート材料層の内、第3ゲート構造の上方にある部分を除去することによって第1ゲート構造及び第2ゲート構造を形成する工程とからなることと、
    前記半導体チャネル構造と、前記第1ゲート構造、第2ゲート構造、及び第3ゲート構造からなる群から選択された少なくとも1つのゲート構造との間に電荷蓄積層を形成する工程とを備える、半導体デバイスの製造方法。
  2. 半導体構造と、該半導体構造は上面と、第1サイドウォールと、該第1サイドウォールと対向する第2サイドウォールと、
    前記第1サイドウォールに隣接して設けられる第1ゲート構造と、第2サイドウォールに隣接して設けられる第2ゲート構造と、
    前記上面の上方に設けられる第3ゲート構造と、
    前記上面と前記第3ゲート構造の間に設けられる第1電荷蓄積層とを備え、
    前記第1ゲート構造、第2ゲート構造、及び第3ゲート構造は互いに物理的に離間している、半導体デバイス。
JP2006539531A 2003-11-10 2004-10-20 3つの電気絶縁電極を有するトランジスタ及びトランジスタの形成方法 Pending JP2007511090A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/705,317 US7098502B2 (en) 2003-11-10 2003-11-10 Transistor having three electrically isolated electrodes and method of formation
PCT/US2004/034810 WO2005048299A2 (en) 2003-11-10 2004-10-20 Transistor having three electronically isolated electrodes and method of formation

Publications (2)

Publication Number Publication Date
JP2007511090A JP2007511090A (ja) 2007-04-26
JP2007511090A5 true JP2007511090A5 (ja) 2007-11-08

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JP2006539531A Pending JP2007511090A (ja) 2003-11-10 2004-10-20 3つの電気絶縁電極を有するトランジスタ及びトランジスタの形成方法

Country Status (7)

Country Link
US (1) US7098502B2 (ja)
EP (1) EP1702367A2 (ja)
JP (1) JP2007511090A (ja)
KR (1) KR101114703B1 (ja)
CN (1) CN100433363C (ja)
TW (1) TWI360863B (ja)
WO (1) WO2005048299A2 (ja)

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