JP2007510173A5 - - Google Patents
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- JP2007510173A5 JP2007510173A5 JP2006536846A JP2006536846A JP2007510173A5 JP 2007510173 A5 JP2007510173 A5 JP 2007510173A5 JP 2006536846 A JP2006536846 A JP 2006536846A JP 2006536846 A JP2006536846 A JP 2006536846A JP 2007510173 A5 JP2007510173 A5 JP 2007510173A5
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- JP
- Japan
- Prior art keywords
- composition
- weight
- containing solvent
- salt
- weight percent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000203 mixture Substances 0.000 claims 13
- 239000002904 solvent Substances 0.000 claims 5
- 150000003839 salts Chemical class 0.000 claims 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 3
- 229920002120 photoresistant polymer Polymers 0.000 claims 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 2
- 238000004140 cleaning Methods 0.000 claims 2
- 229960001760 dimethyl sulfoxide Drugs 0.000 claims 2
- 150000003248 quinolines Chemical class 0.000 claims 2
- 229910052717 sulfur Inorganic materials 0.000 claims 2
- 239000011593 sulfur Substances 0.000 claims 2
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- RKTGAWJWCNLSFX-UHFFFAOYSA-M bis(2-hydroxyethyl)-dimethylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(C)CCO RKTGAWJWCNLSFX-UHFFFAOYSA-M 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 230000004907 flux Effects 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000003495 polar organic solvent Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 150000003457 sulfones Chemical class 0.000 claims 1
- 150000003462 sulfoxides Chemical class 0.000 claims 1
- IJGSGCGKAAXRSC-UHFFFAOYSA-M tris(2-hydroxyethyl)-methylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(CCO)CCO IJGSGCGKAAXRSC-UHFFFAOYSA-M 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/689,657 US7135445B2 (en) | 2001-12-04 | 2003-10-22 | Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials |
| PCT/US2004/035148 WO2005043250A2 (en) | 2003-10-22 | 2004-10-22 | Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007510173A JP2007510173A (ja) | 2007-04-19 |
| JP2007510173A5 true JP2007510173A5 (enExample) | 2007-12-06 |
Family
ID=34549851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006536846A Ceased JP2007510173A (ja) | 2003-10-22 | 2004-10-22 | 石英で被覆したポリシリコンおよびその他の資材の洗浄におけるビスコリンおよびトリスコリンの使用工程 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7135445B2 (enExample) |
| EP (1) | EP1682944A2 (enExample) |
| JP (1) | JP2007510173A (enExample) |
| KR (1) | KR20070003772A (enExample) |
| CN (1) | CN1871553A (enExample) |
| WO (1) | WO2005043250A2 (enExample) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7543592B2 (en) | 2001-12-04 | 2009-06-09 | Ekc Technology, Inc. | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
| US8003587B2 (en) * | 2002-06-06 | 2011-08-23 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
| US20060094613A1 (en) * | 2004-10-29 | 2006-05-04 | Lee Wai M | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
| KR100639615B1 (ko) * | 2004-11-02 | 2006-10-30 | 주식회사 하이닉스반도체 | 세정액 및 그를 이용한 반도체소자의 세정 방법 |
| US20060094612A1 (en) * | 2004-11-04 | 2006-05-04 | Mayumi Kimura | Post etch cleaning composition for use with substrates having aluminum |
| KR20060064441A (ko) * | 2004-12-08 | 2006-06-13 | 말린크로트 베이커, 인코포레이티드 | 비수성 비부식성 마이크로전자 세정 조성물 |
| US20060183654A1 (en) * | 2005-02-14 | 2006-08-17 | Small Robert J | Semiconductor cleaning using ionic liquids |
| JP4988165B2 (ja) * | 2005-03-11 | 2012-08-01 | 関東化学株式会社 | フォトレジスト剥離液組成物及びフォトレジストの剥離方法 |
| KR101088568B1 (ko) * | 2005-04-19 | 2011-12-05 | 아반토르 퍼포먼스 머티리얼스, 인크. | 갈바닉 부식을 억제하는 비수성 포토레지스트 스트립퍼 |
| US7632796B2 (en) | 2005-10-28 | 2009-12-15 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
| US9329486B2 (en) * | 2005-10-28 | 2016-05-03 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
| JP4734090B2 (ja) * | 2005-10-31 | 2011-07-27 | 株式会社東芝 | 半導体装置の製造方法 |
| US8288330B2 (en) * | 2006-05-26 | 2012-10-16 | Air Products And Chemicals, Inc. | Composition and method for photoresist removal |
| CN101454872B (zh) * | 2006-05-26 | 2011-04-06 | Lg化学株式会社 | 光刻胶剥离剂组合物和用该光刻胶剥离剂组合物剥离光刻胶的方法 |
| KR101488265B1 (ko) * | 2007-09-28 | 2015-02-02 | 삼성디스플레이 주식회사 | 박리 조성물 및 박리 방법 |
| JP2011502281A (ja) * | 2007-10-31 | 2011-01-20 | イー.ケー.シー.テクノロジー.インコーポレーテッド | フォトレジスト剥離用化合物 |
| KR20100007461A (ko) * | 2008-07-14 | 2010-01-22 | 삼성전자주식회사 | 석영 부품용 세정액 및 이를 이용한 석영 부품 세정방법 |
| MY160647A (en) * | 2008-10-09 | 2017-03-15 | Avantor Performance Mat Inc | Aqueous acidic formulations for copper oxide etch residue removal and prevention of copper electrodeposition |
| JP4903242B2 (ja) * | 2008-10-28 | 2012-03-28 | アバントール パフォーマンス マテリアルズ, インコーポレイテッド | 多金属デバイス処理のためのグルコン酸含有フォトレジスト洗浄組成物 |
| JP2012516046A (ja) * | 2009-01-22 | 2012-07-12 | ビーエーエスエフ ソシエタス・ヨーロピア | 化学機械的研磨後洗浄用組成物 |
| JP2010222552A (ja) * | 2009-02-24 | 2010-10-07 | Sumitomo Chemical Co Ltd | 洗浄用組成物及びそれを用いる液晶性ポリエステル製造装置の洗浄方法 |
| KR101706987B1 (ko) * | 2009-06-10 | 2017-02-15 | 주식회사 동진쎄미켐 | 유기절연막 박리액의 제조방법 |
| MY185453A (en) * | 2009-07-30 | 2021-05-19 | Basf Se | Post ion implant stripper for advanced semiconductor application |
| JP2013504782A (ja) * | 2009-09-09 | 2013-02-07 | ドンウ ファイン−ケム カンパニー.,リミティド. | 銅系配線の形成のためのレジスト除去用組成物 |
| US8101561B2 (en) * | 2009-11-17 | 2012-01-24 | Wai Mun Lee | Composition and method for treating semiconductor substrate surface |
| US8058221B2 (en) * | 2010-04-06 | 2011-11-15 | Samsung Electronics Co., Ltd. | Composition for removing a photoresist and method of manufacturing semiconductor device using the composition |
| US8449681B2 (en) * | 2010-12-16 | 2013-05-28 | Intermolecular, Inc. | Composition and method for removing photoresist and bottom anti-reflective coating for a semiconductor substrate |
| US8889609B2 (en) * | 2011-03-16 | 2014-11-18 | Air Products And Chemicals, Inc. | Cleaning formulations and method of using the cleaning formulations |
| PH12013502349A1 (en) * | 2011-06-22 | 2014-01-06 | Colgate Palmolive Co | Choline salt cleaning compositions |
| EP2764079A4 (en) * | 2011-10-05 | 2015-06-03 | Avantor Performance Mat Inc | MICROELECTRONIC SUBSTRATE CLEANING COMPOSITIONS HAVING COPPER / AZOLE POLYMER INHIBITION |
| US8951950B2 (en) * | 2012-03-12 | 2015-02-10 | Ekc Technology | Aluminum post-etch residue removal with simultaneous surface passivation |
| US9158202B2 (en) | 2012-11-21 | 2015-10-13 | Dynaloy, Llc | Process and composition for removing substances from substrates |
| TWI593796B (zh) * | 2014-01-29 | 2017-08-01 | 台塑生醫科技股份有限公司 | 一種用於去除助焊劑的清潔劑組成物及其製品 |
| TWI591054B (zh) | 2015-07-29 | 2017-07-11 | 藝康美國公司 | 用於烯烴或苯乙烯生產之重胺中和劑 |
| JP6562789B2 (ja) * | 2015-09-10 | 2019-08-21 | キヤノン株式会社 | 除去対象物の除去方法 |
| TWI705132B (zh) * | 2015-10-08 | 2020-09-21 | 日商三菱瓦斯化學股份有限公司 | 半導體元件之洗淨用液體組成物、半導體元件之洗淨方法及半導體元件之製造方法 |
| KR102384908B1 (ko) * | 2015-11-25 | 2022-04-08 | 삼성전자주식회사 | 자성 패턴 세정 조성물, 자성 패턴 형성 방법 및 자기 메모리 장치의 제조 방법 |
| WO2017218147A1 (en) * | 2016-06-13 | 2017-12-21 | Avantor Performance Materials, Llc | Cleaning compositions for microelectronic substrates containing aluminum |
| KR102471495B1 (ko) * | 2017-12-08 | 2022-11-28 | 헨켈 아게 운트 코. 카게아아 | 포토레지스트 스트리퍼 조성물 |
| CA3110457A1 (en) | 2018-08-30 | 2020-03-05 | Huntsman Petrochemical Llc | Quaternary ammonium hydroxides of polyamines |
| CN113050329A (zh) * | 2019-12-27 | 2021-06-29 | 深圳新宙邦科技股份有限公司 | 一种聚酰亚胺型配向膜返工液 |
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-
2003
- 2003-10-22 US US10/689,657 patent/US7135445B2/en not_active Expired - Lifetime
-
2004
- 2004-10-22 EP EP04796185A patent/EP1682944A2/en not_active Withdrawn
- 2004-10-22 WO PCT/US2004/035148 patent/WO2005043250A2/en not_active Ceased
- 2004-10-22 JP JP2006536846A patent/JP2007510173A/ja not_active Ceased
- 2004-10-22 CN CNA200480031172XA patent/CN1871553A/zh active Pending
- 2004-10-22 KR KR1020067009959A patent/KR20070003772A/ko not_active Withdrawn
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