NO20073122L - Ikke-vandige, ikke-korrosive mikroelektronikk-renseformuleringer - Google Patents

Ikke-vandige, ikke-korrosive mikroelektronikk-renseformuleringer

Info

Publication number
NO20073122L
NO20073122L NO20073122A NO20073122A NO20073122L NO 20073122 L NO20073122 L NO 20073122L NO 20073122 A NO20073122 A NO 20073122A NO 20073122 A NO20073122 A NO 20073122A NO 20073122 L NO20073122 L NO 20073122L
Authority
NO
Norway
Prior art keywords
alkyl
alkoxy
integer
compound
corrosive
Prior art date
Application number
NO20073122A
Other languages
English (en)
Inventor
Seiji Inaoka
Original Assignee
Mallinckrodt Baker Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mallinckrodt Baker Inc filed Critical Mallinckrodt Baker Inc
Publication of NO20073122L publication Critical patent/NO20073122L/no

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
    • B28D7/04—Accessories specially adapted for use with machines or devices of the preceding groups for supporting or holding work or conveying or discharging work
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mining & Mineral Resources (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Nedstrømsende fotolakk ("fotoresist") strippemidler og renseblandinger ifølge denne oppfinnelse tilveiebringes ved hjelp av aminosyrefrie, ikke-vandige renseblandinger som er hovedsakelig ikke-korrosive mot kobber så vel som aluminium og som omfatter minst ett polart organisk løsningsmiddel, minst ett hydroksylert organisk amin og minst én korrosjonsinhibitorforbindelse med flere hydroksylfunksjonelle grupper og som er en forbindelse med formelen: T1-[(CR1R2)m-(CR3R4)n]P-(CR5R6)q-T2 hvori minst en av R1 og R2 er OH og hvis en av R1 og R2 ikke er OH, er den valgt fra H, alkyl eller alkoksy, m er et helt tall på 1 eller større, R3 og R4 er valgt fra H, alkyl eller alkoksy, n er 0 eller et større helt positivt tall, p er et helt tall på 1 eller større; minst en av R5 og R6 er OH og hvis en av R5 og R6 ikke er OH, er den valgt fra H, alkyl eller alkoksy, q er et helt tall på 1 eller større; T1 og T2 er valgt fra H, alkyl, hydroksyalkyl, polyhydroksyalkyl, aminoalkyl, karbonylalkyl eller amidgrupper eller T1 og T2 kan være forbundet under dannelse av en struktur valgt fra en alifatisk cyklisk eller kondensert cyklisk struktur, og eventuelt ett eller flere av hydroksylholdig koløsningsmiddel, korrosjonsinhiberende arylforbindelse inneholdende to eller flere OH, OR6 og/eller S02R6R7 grupper bundet direkte til den aromatiske ring, hvor R6, R7 og R8 hver er uavhengig valgt fra gruppen bestående av alkyl og aryl, metallkompleksdannende middel, en forskjellig metallkorrosjonsinhiberende forbindelse og surfaktant.
NO20073122A 2004-12-08 2007-06-18 Ikke-vandige, ikke-korrosive mikroelektronikk-renseformuleringer NO20073122L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US63414104P 2004-12-08 2004-12-08
PCT/US2005/006247 WO2006062534A1 (en) 2004-12-08 2005-02-25 Non-aqueous, non-corrosive microelectronic cleaning compositions

Publications (1)

Publication Number Publication Date
NO20073122L true NO20073122L (no) 2007-08-28

Family

ID=34961521

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20073122A NO20073122L (no) 2004-12-08 2007-06-18 Ikke-vandige, ikke-korrosive mikroelektronikk-renseformuleringer

Country Status (13)

Country Link
US (1) US7951764B2 (no)
EP (1) EP1836535A1 (no)
JP (1) JP4208924B2 (no)
KR (1) KR20060064441A (no)
CN (1) CN1784487B (no)
BR (1) BRPI0515810A (no)
CA (1) CA2591483A1 (no)
IL (1) IL183648A (no)
MY (1) MY141293A (no)
NO (1) NO20073122L (no)
TW (1) TWI353381B (no)
WO (1) WO2006062534A1 (no)
ZA (1) ZA200704029B (no)

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KR101088568B1 (ko) * 2005-04-19 2011-12-05 아반토르 퍼포먼스 머티리얼스, 인크. 갈바닉 부식을 억제하는 비수성 포토레지스트 스트립퍼
KR101403515B1 (ko) * 2006-06-22 2014-06-09 주식회사 동진쎄미켐 포토레지스트 제거용 조성물
US20080125342A1 (en) * 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
CN101187788A (zh) * 2006-11-17 2008-05-28 安集微电子（上海）有限公司 低蚀刻性较厚光刻胶清洗液
FR2912151B1 (fr) * 2007-02-05 2009-05-08 Arkema France Formulation de dimethylsulfoxyde en melange avec un additif permettant d'abaisser le point de cristallisation de ce dernier, et applications de ce melange
KR101525505B1 (ko) 2008-07-23 2015-06-03 이와다니산교가부시기가이샤 오존가스 농축 방법 및 그 장치
JP4903242B2 (ja) * 2008-10-28 2012-03-28 アバントール パフォーマンス マテリアルズ， インコーポレイテッド 多金属デバイス処理のためのグルコン酸含有フォトレジスト洗浄組成物
KR101579846B1 (ko) * 2008-12-24 2015-12-24 주식회사 이엔에프테크놀로지 포토레지스트 패턴 제거용 조성물 및 이를 이용한 금속 패턴의 형성 방법
WO2010098899A1 (en) * 2009-02-25 2010-09-02 Mallinckrodt Baker, Inc. Multipurpose acidic, organic solvent based microelectronic cleaning composition
WO2011019189A2 (ko) * 2009-08-11 2011-02-17 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법
EP2432035B1 (en) 2010-09-21 2017-05-31 Sun Chemical Corporation Improved method of stripping hot melt etch resists from semiconductors
KR101999641B1 (ko) 2011-10-05 2019-07-12 아반토 퍼포먼스 머티리얼즈, 엘엘씨 구리/아졸 중합체 억제를 갖는 마이크로일렉트로닉 기판 세정 조성물
US9223221B2 (en) 2012-03-16 2015-12-29 Basf Se Photoresist stripping and cleaning composition, method of its preparation and its use
ES2549579B1 (es) * 2014-04-28 2016-10-05 Universidad De Granada Composición para eliminar cementos y morteros a base de cemento
KR101586453B1 (ko) * 2014-08-20 2016-01-21 주식회사 엘지화학 포토레지스트 제거용 스트리퍼 조성물 및 이를 이용한 포토레지스트의 박리방법
TWI818893B (zh) * 2015-07-14 2023-10-21 美商富士軟片電子材料美國股份有限公司 清潔組成物及其使用方法
KR102209389B1 (ko) * 2016-09-26 2021-01-28 주식회사 엘지화학 포토레지스트 제거용 스트리퍼 폐액의 정제 방법
TWI824299B (zh) * 2020-09-22 2023-12-01 美商恩特葛瑞斯股份有限公司 蝕刻劑組合物
CN113921383B (zh) 2021-09-14 2022-06-03 浙江奥首材料科技有限公司 一种铜表面钝化组合物、其用途及包含其的光刻胶剥离液

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Also Published As

Publication number Publication date
EP1836535A1 (en) 2007-09-26
KR20060064441A (ko) 2006-06-13
IL183648A0 (en) 2007-09-20
US20080103078A1 (en) 2008-05-01
MY141293A (en) 2010-04-16
CN1784487B (zh) 2012-10-03
TW200619380A (en) 2006-06-16
WO2006062534A1 (en) 2006-06-15
JP4208924B2 (ja) 2009-01-14
BRPI0515810A (pt) 2008-08-05
JP2007514983A (ja) 2007-06-07
CN1784487A (zh) 2006-06-07
CA2591483A1 (en) 2006-06-15
US7951764B2 (en) 2011-05-31
ZA200704029B (en) 2008-05-28
IL183648A (en) 2013-02-28
TWI353381B (en) 2011-12-01

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