JP2007510173A - 石英で被覆したポリシリコンおよびその他の資材の洗浄におけるビスコリンおよびトリスコリンの使用工程 - Google Patents

石英で被覆したポリシリコンおよびその他の資材の洗浄におけるビスコリンおよびトリスコリンの使用工程 Download PDF

Info

Publication number
JP2007510173A
JP2007510173A JP2006536846A JP2006536846A JP2007510173A JP 2007510173 A JP2007510173 A JP 2007510173A JP 2006536846 A JP2006536846 A JP 2006536846A JP 2006536846 A JP2006536846 A JP 2006536846A JP 2007510173 A JP2007510173 A JP 2007510173A
Authority
JP
Japan
Prior art keywords
weight percent
composition
containing solvent
amount
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2006536846A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007510173A5 (enExample
Inventor
チャーム，リチャード，ウィリアム
ゾウ，デ−リング
スモール，ロバート，ジェイ．
リー，シハイイング
Original Assignee
イーケーシー テクノロジー，インコーポレイティド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by イーケーシー テクノロジー，インコーポレイティド filed Critical イーケーシー テクノロジー，インコーポレイティド
Publication of JP2007510173A publication Critical patent/JP2007510173A/ja
Publication of JP2007510173A5 publication Critical patent/JP2007510173A5/ja
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D11/00—Special methods for preparing compositions containing mixtures of detergents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2006536846A 2003-10-22 2004-10-22 石英で被覆したポリシリコンおよびその他の資材の洗浄におけるビスコリンおよびトリスコリンの使用工程 Ceased JP2007510173A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/689,657 US7135445B2 (en) 2001-12-04 2003-10-22 Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials
PCT/US2004/035148 WO2005043250A2 (en) 2003-10-22 2004-10-22 Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials

Publications (2)

Publication Number Publication Date
JP2007510173A true JP2007510173A (ja) 2007-04-19
JP2007510173A5 JP2007510173A5 (enExample) 2007-12-06

Family

ID=34549851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006536846A Ceased JP2007510173A (ja) 2003-10-22 2004-10-22 石英で被覆したポリシリコンおよびその他の資材の洗浄におけるビスコリンおよびトリスコリンの使用工程

Country Status (6)

Country Link
US (1) US7135445B2 (enExample)
EP (1) EP1682944A2 (enExample)
JP (1) JP2007510173A (enExample)
KR (1) KR20070003772A (enExample)
CN (1) CN1871553A (enExample)
WO (1) WO2005043250A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009538456A (ja) * 2006-05-26 2009-11-05 エルジー・ケム・リミテッド フォトレジスト用ストリッパー組成物
JP2013504782A (ja) * 2009-09-09 2013-02-07 ドンウ ファイン−ケム カンパニー．，リミティド． 銅系配線の形成のためのレジスト除去用組成物
KR101521066B1 (ko) * 2008-10-09 2015-05-18 아반토르 퍼포먼스 머티리얼스, 인크. 산화구리 에칭 잔여물 제거 및 구리 전착 방지용 수성 산성 배합물

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7543592B2 (en) 2001-12-04 2009-06-09 Ekc Technology, Inc. Compositions and processes for photoresist stripping and residue removal in wafer level packaging
US8003587B2 (en) * 2002-06-06 2011-08-23 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US20060094613A1 (en) * 2004-10-29 2006-05-04 Lee Wai M Compositions and processes for photoresist stripping and residue removal in wafer level packaging
KR100639615B1 (ko) * 2004-11-02 2006-10-30 주식회사 하이닉스반도체 세정액 및 그를 이용한 반도체소자의 세정 방법
US20060094612A1 (en) * 2004-11-04 2006-05-04 Mayumi Kimura Post etch cleaning composition for use with substrates having aluminum
KR20060064441A (ko) * 2004-12-08 2006-06-13 말린크로트 베이커, 인코포레이티드 비수성 비부식성 마이크로전자 세정 조성물
US20060183654A1 (en) * 2005-02-14 2006-08-17 Small Robert J Semiconductor cleaning using ionic liquids
JP4988165B2 (ja) * 2005-03-11 2012-08-01 関東化学株式会社 フォトレジスト剥離液組成物及びフォトレジストの剥離方法
KR101088568B1 (ko) * 2005-04-19 2011-12-05 아반토르 퍼포먼스 머티리얼스, 인크. 갈바닉 부식을 억제하는 비수성 포토레지스트 스트립퍼
US9329486B2 (en) * 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US7632796B2 (en) 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
JP4734090B2 (ja) * 2005-10-31 2011-07-27 株式会社東芝 半導体装置の製造方法
US8288330B2 (en) * 2006-05-26 2012-10-16 Air Products And Chemicals, Inc. Composition and method for photoresist removal
KR101488265B1 (ko) * 2007-09-28 2015-02-02 삼성디스플레이 주식회사 박리 조성물 및 박리 방법
US20090111726A1 (en) * 2007-10-31 2009-04-30 Shang X Cass Compounds for Photoresist Stripping
KR20100007461A (ko) * 2008-07-14 2010-01-22 삼성전자주식회사 석영 부품용 세정액 및 이를 이용한 석영 부품 세정방법
JP4903242B2 (ja) * 2008-10-28 2012-03-28 アバントール パフォーマンス マテリアルズ， インコーポレイテッド 多金属デバイス処理のためのグルコン酸含有フォトレジスト洗浄組成物
SG172360A1 (en) * 2009-01-22 2011-08-29 Basf Se Composition for post chemical-mechanical polishing cleaning
JP2010222552A (ja) * 2009-02-24 2010-10-07 Sumitomo Chemical Co Ltd 洗浄用組成物及びそれを用いる液晶性ポリエステル製造装置の洗浄方法
KR101706987B1 (ko) * 2009-06-10 2017-02-15 주식회사 동진쎄미켐 유기절연막 박리액의 제조방법
CN102473638B (zh) * 2009-07-30 2015-02-18 巴斯夫欧洲公司 用于高级半导体应用的离子植入后剥离剂
US8101561B2 (en) * 2009-11-17 2012-01-24 Wai Mun Lee Composition and method for treating semiconductor substrate surface
US8058221B2 (en) * 2010-04-06 2011-11-15 Samsung Electronics Co., Ltd. Composition for removing a photoresist and method of manufacturing semiconductor device using the composition
US8449681B2 (en) * 2010-12-16 2013-05-28 Intermolecular, Inc. Composition and method for removing photoresist and bottom anti-reflective coating for a semiconductor substrate
US8889609B2 (en) * 2011-03-16 2014-11-18 Air Products And Chemicals, Inc. Cleaning formulations and method of using the cleaning formulations
US8901061B2 (en) * 2011-06-22 2014-12-02 Colgate-Palmolive Company Choline salt cleaning compositions
WO2013052809A1 (en) * 2011-10-05 2013-04-11 Avantor Performance Materials, Inc. Microelectronic substrate cleaning compositions having copper/azole polymer inhibition
US8951950B2 (en) * 2012-03-12 2015-02-10 Ekc Technology Aluminum post-etch residue removal with simultaneous surface passivation
US9158202B2 (en) 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
TWI593796B (zh) * 2014-01-29 2017-08-01 台塑生醫科技股份有限公司 一種用於去除助焊劑的清潔劑組成物及其製品
WO2017019825A1 (en) 2015-07-29 2017-02-02 Ecolab Usa Inc. Heavy amine neutralizing agents for olefin or styrene production
JP6562789B2 (ja) * 2015-09-10 2019-08-21 キヤノン株式会社 除去対象物の除去方法
TWI705132B (zh) * 2015-10-08 2020-09-21 日商三菱瓦斯化學股份有限公司 半導體元件之洗淨用液體組成物、半導體元件之洗淨方法及半導體元件之製造方法
KR102384908B1 (ko) * 2015-11-25 2022-04-08 삼성전자주식회사 자성 패턴 세정 조성물, 자성 패턴 형성 방법 및 자기 메모리 장치의 제조 방법
WO2017218147A1 (en) * 2016-06-13 2017-12-21 Avantor Performance Materials, Llc Cleaning compositions for microelectronic substrates containing aluminum
WO2019109329A1 (en) * 2017-12-08 2019-06-13 Henkel Ag & Co. Kgaa Photoresist stripper compostion
JP2021536517A (ja) 2018-08-30 2021-12-27 ハンツマン ペトロケミカル エルエルシーHuntsman Petrochemical LLC ポリアミンの第四級アンモニウム水酸化物
CN113050329A (zh) * 2019-12-27 2021-06-29 深圳新宙邦科技股份有限公司 一种聚酰亚胺型配向膜返工液

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11214373A (ja) * 1998-01-26 1999-08-06 Tama Kagaku Kogyo Kk 第四アンモニウム塩基型半導体表面処理剤とその製造方法
JP2002520812A (ja) * 1998-07-06 2002-07-09 イーケイシー テクノロジー インコーポレーテッド デュアルダマシン系用のエッチング後洗浄組成物及び方法
JP2003005383A (ja) * 2000-11-30 2003-01-08 Tosoh Corp レジスト剥離剤

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1573206A (en) * 1975-11-26 1980-08-20 Tokyo Shibaura Electric Co Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices
US4339340A (en) * 1975-11-26 1982-07-13 Tokyo Shibaura Electric Co., Ltd. Surface-treating agent adapted for intermediate products of a semiconductor device
JPS5351970A (en) * 1976-10-21 1978-05-11 Toshiba Corp Manufacture for semiconductor substrate
US4294911A (en) * 1979-06-18 1981-10-13 Eastman Kodak Company Development of light-sensitive quinone diazide compositions using sulfite stabilizer
US4403028A (en) * 1981-01-26 1983-09-06 Andrews Paper & Chemical Co., Inc. Light sensitive diazonium salts and diazotype materials
US4395479A (en) * 1981-09-23 1983-07-26 J. T. Baker Chemical Company Stripping compositions and methods of stripping resists
US4428871A (en) * 1981-09-23 1984-01-31 J. T. Baker Chemical Company Stripping compositions and methods of stripping resists
US4401747A (en) * 1982-09-02 1983-08-30 J. T. Baker Chemical Company Stripping compositions and methods of stripping resists
US4464461A (en) * 1983-07-22 1984-08-07 Eastman Kodak Company Development of light-sensitive quinone diazide compositions
US4617251A (en) * 1985-04-11 1986-10-14 Olin Hunt Specialty Products, Inc. Stripping composition and method of using the same
US4744834A (en) * 1986-04-30 1988-05-17 Noor Haq Photoresist stripper comprising a pyrrolidinone, a diethylene glycol ether, a polyglycol and a quaternary ammonium hydroxide
JPS62281323A (ja) 1986-05-30 1987-12-07 Nec Corp 半導体装置の製造方法
US4770713A (en) * 1986-12-10 1988-09-13 Advanced Chemical Technologies, Inc. Stripping compositions containing an alkylamide and an alkanolamine and use thereof
JPS63208043A (ja) 1987-02-25 1988-08-29 Kanto Kagaku Kk ポジ型フオトレジスト用水溶性剥離液
JP2553872B2 (ja) * 1987-07-21 1996-11-13 東京応化工業株式会社 ホトレジスト用剥離液
US4824763A (en) * 1987-07-30 1989-04-25 Ekc Technology, Inc. Triamine positive photoresist stripping composition and prebaking process
JP2578821B2 (ja) 1987-08-10 1997-02-05 東京応化工業株式会社 ポジ型ホトレジスト用剥離液
JPH0769618B2 (ja) 1987-09-25 1995-07-31 旭化成工業株式会社 フオトレジスト用剥離剤
JPH01191450A (ja) 1988-01-27 1989-08-01 Toshiba Corp 半導体装置の製造方法
JPH02275631A (ja) 1989-01-11 1990-11-09 Dainippon Screen Mfg Co Ltd 基板の洗浄処理方法及びその装置
JPH03227009A (ja) 1990-01-31 1991-10-08 Matsushita Electron Corp 半導体装置の製造方法
US5102777A (en) * 1990-02-01 1992-04-07 Ardrox Inc. Resist stripping
JP2527268B2 (ja) 1990-09-17 1996-08-21 東京応化工業株式会社 レジスト用剥離剤組成物
US5279771A (en) * 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
CA2062027C (en) * 1991-03-04 1998-05-19 William Aldrich Liquid control system for diagnostic cartridges used in analytical instruments
JPH04350660A (ja) 1991-05-28 1992-12-04 Texas Instr Japan Ltd 半導体装置製造用ポジ型フォトレジスト用剥離液および半導体装置の製造方法
JP3310318B2 (ja) 1991-12-27 2002-08-05 任天堂株式会社 データ処理システム
US5480585A (en) * 1992-04-02 1996-01-02 Nagase Electronic Chemicals, Ltd. Stripping liquid compositions
JPH0641773A (ja) 1992-05-18 1994-02-15 Toshiba Corp 半導体ウェーハ処理液
US5739579A (en) * 1992-06-29 1998-04-14 Intel Corporation Method for forming interconnections for semiconductor fabrication and semiconductor device having such interconnections
US6825156B2 (en) * 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US5308745A (en) * 1992-11-06 1994-05-03 J. T. Baker Inc. Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins
JP3244813B2 (ja) 1992-11-20 2002-01-07 株式会社東芝 半導体ウエハ処理液及び処理方法
US5417802A (en) * 1994-03-18 1995-05-23 At&T Corp. Integrated circuit manufacturing
JP3449651B2 (ja) 1994-09-16 2003-09-22 東京応化工業株式会社 レジスト剥離液組成物
US5635423A (en) * 1994-10-11 1997-06-03 Advanced Micro Devices, Inc. Simplified dual damascene process for multi-level metallization and interconnection structure
US5705430A (en) * 1995-06-07 1998-01-06 Advanced Micro Devices, Inc. Dual damascene with a sacrificial via fill
JP3614242B2 (ja) * 1996-04-12 2005-01-26 三菱瓦斯化学株式会社 フォトレジスト剥離剤及び半導体集積回路の製造方法
US5968848A (en) * 1996-12-27 1999-10-19 Tokyo Ohka Kogyo Co., Ltd. Process for treating a lithographic substrate and a rinse solution for the treatment
US6060439A (en) * 1997-09-29 2000-05-09 Kyzen Corporation Cleaning compositions and methods for cleaning resin and polymeric materials used in manufacture
JPH11197523A (ja) 1998-01-19 1999-07-27 Yamamoto Co Ltd 籾摺精米装置
KR100610387B1 (ko) * 1998-05-18 2006-08-09 말린크로트 베이커, 인코포레이티드 초소형 전자 기판 세정용 실리케이트 함유 알칼리성 조성물
US6348239B1 (en) * 2000-04-28 2002-02-19 Simon Fraser University Method for depositing metal and metal oxide films and patterned films
US6235693B1 (en) * 1999-07-16 2001-05-22 Ekc Technology, Inc. Lactam compositions for cleaning organic and plasma etched residues for semiconductor devices
US6531436B1 (en) * 2000-02-25 2003-03-11 Shipley Company, L.L.C. Polymer removal
US6475966B1 (en) * 2000-02-25 2002-11-05 Shipley Company, L.L.C. Plasma etching residue removal
KR100764888B1 (ko) * 2000-07-10 2007-10-09 이케이씨 테크놀로지, 인코포레이티드 반도체 장치용의 유기 및 플라즈마 식각된 잔사의 세척을위한 조성물
CN100403169C (zh) * 2001-07-13 2008-07-16 Ekc技术公司 亚砜吡咯烷酮链烷醇胺剥离和清洗组合物

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11214373A (ja) * 1998-01-26 1999-08-06 Tama Kagaku Kogyo Kk 第四アンモニウム塩基型半導体表面処理剤とその製造方法
JP2002520812A (ja) * 1998-07-06 2002-07-09 イーケイシー テクノロジー インコーポレーテッド デュアルダマシン系用のエッチング後洗浄組成物及び方法
JP2003005383A (ja) * 2000-11-30 2003-01-08 Tosoh Corp レジスト剥離剤

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009538456A (ja) * 2006-05-26 2009-11-05 エルジー・ケム・リミテッド フォトレジスト用ストリッパー組成物
JP4773562B2 (ja) * 2006-05-26 2011-09-14 エルジー・ケム・リミテッド フォトレジスト用ストリッパー組成物
KR101521066B1 (ko) * 2008-10-09 2015-05-18 아반토르 퍼포먼스 머티리얼스, 인크. 산화구리 에칭 잔여물 제거 및 구리 전착 방지용 수성 산성 배합물
JP2013504782A (ja) * 2009-09-09 2013-02-07 ドンウ ファイン−ケム カンパニー．，リミティド． 銅系配線の形成のためのレジスト除去用組成物

Also Published As

Publication number Publication date
WO2005043250B1 (en) 2005-10-20
US7135445B2 (en) 2006-11-14
US20040147421A1 (en) 2004-07-29
WO2005043250A2 (en) 2005-05-12
KR20070003772A (ko) 2007-01-05
EP1682944A2 (en) 2006-07-26
WO2005043250A3 (en) 2005-08-11
CN1871553A (zh) 2006-11-29

Similar Documents

Publication Publication Date Title
JP2007510173A (ja) 石英で被覆したポリシリコンおよびその他の資材の洗浄におけるビスコリンおよびトリスコリンの使用工程
CN100403169C (zh) 亚砜吡咯烷酮链烷醇胺剥离和清洗组合物
CN101116178B (zh) 用于晶片级包装中光刻胶剥离和残留物去除的组合物和方法
JP3150306B2 (ja) 還元及び酸化電位を有する求核アミン化合物を含む洗浄剤組成物およびこれを使用した基板の洗浄方法
KR100949206B1 (ko) 세정제 조성물
US6943142B2 (en) Aqueous stripping and cleaning composition
US20090120457A1 (en) Compositions and method for removing coatings and preparation of surfaces for use in metal finishing, and manufacturing of electronic and microelectronic devices
US20040038840A1 (en) Oxalic acid as a semiaqueous cleaning product for copper and dielectrics
US20090291565A1 (en) Method for stripping photoresist
WO2003083582A1 (en) Ph buffered compositions for cleaning semiconductor substrates
JP2004502980A (ja) 半導体デバイスの有機及びプラズマエッチング残さの洗浄用組成物
KR20070106038A (ko) 구리 및 저 ｋ 유전체 물질을 갖는 기판으로부터 레지스트,에칭 잔류물 및 구리 산화물을 제거하는 방법
WO2004100245A1 (en) Removal of post-etch residues in semiconductor processing
KR20100076999A (ko) 포토레지스트 박리를 위한 화합물
JP2025022908A (ja) 半導体基材のための洗浄組成物
US7825078B2 (en) Non-aqueous microelectronic cleaning compositions containing fructose
TWI850424B (zh) 用於移除蝕刻殘留物之組合物、使用其之方法及其用途
TW202122564A (zh) 用於移除蝕刻殘留物之組合物、使用其之方法及其用途
HK1117940A (en) Compositions and processes for photoresist stripping and residue removal in wafer level packaging

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071022

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071022

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100323

A045 Written measure of dismissal of application [lapsed due to lack of payment]

Free format text: JAPANESE INTERMEDIATE CODE: A045

Effective date: 20100727