CN1871553A - 双胆碱和三胆碱在涂石英多晶硅和其它材料清洁中的用法 - Google Patents
双胆碱和三胆碱在涂石英多晶硅和其它材料清洁中的用法 Download PDFInfo
- Publication number
- CN1871553A CN1871553A CNA200480031172XA CN200480031172A CN1871553A CN 1871553 A CN1871553 A CN 1871553A CN A200480031172X A CNA200480031172X A CN A200480031172XA CN 200480031172 A CN200480031172 A CN 200480031172A CN 1871553 A CN1871553 A CN 1871553A
- Authority
- CN
- China
- Prior art keywords
- composition according
- composition
- choline
- photoresist
- solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D11/00—Special methods for preparing compositions containing mixtures of detergents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/689,657 US7135445B2 (en) | 2001-12-04 | 2003-10-22 | Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials |
| US10/689,657 | 2003-10-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1871553A true CN1871553A (zh) | 2006-11-29 |
Family
ID=34549851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA200480031172XA Pending CN1871553A (zh) | 2003-10-22 | 2004-10-22 | 双胆碱和三胆碱在涂石英多晶硅和其它材料清洁中的用法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7135445B2 (enExample) |
| EP (1) | EP1682944A2 (enExample) |
| JP (1) | JP2007510173A (enExample) |
| KR (1) | KR20070003772A (enExample) |
| CN (1) | CN1871553A (enExample) |
| WO (1) | WO2005043250A2 (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103305355A (zh) * | 2012-03-12 | 2013-09-18 | Ekc技术公司 | 同时具有表面钝化的铝蚀刻后残留物移除 |
| TWI593796B (zh) * | 2014-01-29 | 2017-08-01 | 台塑生醫科技股份有限公司 | 一種用於去除助焊劑的清潔劑組成物及其製品 |
| CN113050329A (zh) * | 2019-12-27 | 2021-06-29 | 深圳新宙邦科技股份有限公司 | 一种聚酰亚胺型配向膜返工液 |
| TWI732885B (zh) * | 2016-06-13 | 2021-07-11 | 美商艾萬拓有限責任公司 | 用於含鋁之微電子基板的清潔組合物 |
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| US7543592B2 (en) | 2001-12-04 | 2009-06-09 | Ekc Technology, Inc. | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
| US8003587B2 (en) * | 2002-06-06 | 2011-08-23 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
| US20060094613A1 (en) * | 2004-10-29 | 2006-05-04 | Lee Wai M | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
| KR100639615B1 (ko) * | 2004-11-02 | 2006-10-30 | 주식회사 하이닉스반도체 | 세정액 및 그를 이용한 반도체소자의 세정 방법 |
| US20060094612A1 (en) * | 2004-11-04 | 2006-05-04 | Mayumi Kimura | Post etch cleaning composition for use with substrates having aluminum |
| KR20060064441A (ko) * | 2004-12-08 | 2006-06-13 | 말린크로트 베이커, 인코포레이티드 | 비수성 비부식성 마이크로전자 세정 조성물 |
| US20060183654A1 (en) * | 2005-02-14 | 2006-08-17 | Small Robert J | Semiconductor cleaning using ionic liquids |
| JP4988165B2 (ja) * | 2005-03-11 | 2012-08-01 | 関東化学株式会社 | フォトレジスト剥離液組成物及びフォトレジストの剥離方法 |
| KR101088568B1 (ko) * | 2005-04-19 | 2011-12-05 | 아반토르 퍼포먼스 머티리얼스, 인크. | 갈바닉 부식을 억제하는 비수성 포토레지스트 스트립퍼 |
| US7632796B2 (en) | 2005-10-28 | 2009-12-15 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
| US9329486B2 (en) * | 2005-10-28 | 2016-05-03 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
| JP4734090B2 (ja) * | 2005-10-31 | 2011-07-27 | 株式会社東芝 | 半導体装置の製造方法 |
| US8288330B2 (en) * | 2006-05-26 | 2012-10-16 | Air Products And Chemicals, Inc. | Composition and method for photoresist removal |
| CN101454872B (zh) * | 2006-05-26 | 2011-04-06 | Lg化学株式会社 | 光刻胶剥离剂组合物和用该光刻胶剥离剂组合物剥离光刻胶的方法 |
| KR101488265B1 (ko) * | 2007-09-28 | 2015-02-02 | 삼성디스플레이 주식회사 | 박리 조성물 및 박리 방법 |
| JP2011502281A (ja) * | 2007-10-31 | 2011-01-20 | イー.ケー.シー.テクノロジー.インコーポレーテッド | フォトレジスト剥離用化合物 |
| KR20100007461A (ko) * | 2008-07-14 | 2010-01-22 | 삼성전자주식회사 | 석영 부품용 세정액 및 이를 이용한 석영 부품 세정방법 |
| MY160647A (en) * | 2008-10-09 | 2017-03-15 | Avantor Performance Mat Inc | Aqueous acidic formulations for copper oxide etch residue removal and prevention of copper electrodeposition |
| JP4903242B2 (ja) * | 2008-10-28 | 2012-03-28 | アバントール パフォーマンス マテリアルズ, インコーポレイテッド | 多金属デバイス処理のためのグルコン酸含有フォトレジスト洗浄組成物 |
| JP2012516046A (ja) * | 2009-01-22 | 2012-07-12 | ビーエーエスエフ ソシエタス・ヨーロピア | 化学機械的研磨後洗浄用組成物 |
| JP2010222552A (ja) * | 2009-02-24 | 2010-10-07 | Sumitomo Chemical Co Ltd | 洗浄用組成物及びそれを用いる液晶性ポリエステル製造装置の洗浄方法 |
| KR101706987B1 (ko) * | 2009-06-10 | 2017-02-15 | 주식회사 동진쎄미켐 | 유기절연막 박리액의 제조방법 |
| MY185453A (en) * | 2009-07-30 | 2021-05-19 | Basf Se | Post ion implant stripper for advanced semiconductor application |
| JP2013504782A (ja) * | 2009-09-09 | 2013-02-07 | ドンウ ファイン−ケム カンパニー.,リミティド. | 銅系配線の形成のためのレジスト除去用組成物 |
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| US8889609B2 (en) * | 2011-03-16 | 2014-11-18 | Air Products And Chemicals, Inc. | Cleaning formulations and method of using the cleaning formulations |
| PH12013502349A1 (en) * | 2011-06-22 | 2014-01-06 | Colgate Palmolive Co | Choline salt cleaning compositions |
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| US9158202B2 (en) | 2012-11-21 | 2015-10-13 | Dynaloy, Llc | Process and composition for removing substances from substrates |
| TWI591054B (zh) | 2015-07-29 | 2017-07-11 | 藝康美國公司 | 用於烯烴或苯乙烯生產之重胺中和劑 |
| JP6562789B2 (ja) * | 2015-09-10 | 2019-08-21 | キヤノン株式会社 | 除去対象物の除去方法 |
| TWI705132B (zh) * | 2015-10-08 | 2020-09-21 | 日商三菱瓦斯化學股份有限公司 | 半導體元件之洗淨用液體組成物、半導體元件之洗淨方法及半導體元件之製造方法 |
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| US6348239B1 (en) * | 2000-04-28 | 2002-02-19 | Simon Fraser University | Method for depositing metal and metal oxide films and patterned films |
| US6235693B1 (en) * | 1999-07-16 | 2001-05-22 | Ekc Technology, Inc. | Lactam compositions for cleaning organic and plasma etched residues for semiconductor devices |
| US6531436B1 (en) * | 2000-02-25 | 2003-03-11 | Shipley Company, L.L.C. | Polymer removal |
| US6475966B1 (en) * | 2000-02-25 | 2002-11-05 | Shipley Company, L.L.C. | Plasma etching residue removal |
| KR100764888B1 (ko) * | 2000-07-10 | 2007-10-09 | 이케이씨 테크놀로지, 인코포레이티드 | 반도체 장치용의 유기 및 플라즈마 식각된 잔사의 세척을위한 조성물 |
| JP2003005383A (ja) * | 2000-11-30 | 2003-01-08 | Tosoh Corp | レジスト剥離剤 |
| JP2004538503A (ja) * | 2001-07-13 | 2004-12-24 | イーケーシー テクノロジー,インコーポレイティド | スルホキシド−ピロリドン(ピロリジノン)−アルカノールアミン系剥離および洗浄組成物 |
-
2003
- 2003-10-22 US US10/689,657 patent/US7135445B2/en not_active Expired - Lifetime
-
2004
- 2004-10-22 EP EP04796185A patent/EP1682944A2/en not_active Withdrawn
- 2004-10-22 WO PCT/US2004/035148 patent/WO2005043250A2/en not_active Ceased
- 2004-10-22 JP JP2006536846A patent/JP2007510173A/ja not_active Ceased
- 2004-10-22 CN CNA200480031172XA patent/CN1871553A/zh active Pending
- 2004-10-22 KR KR1020067009959A patent/KR20070003772A/ko not_active Withdrawn
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103305355A (zh) * | 2012-03-12 | 2013-09-18 | Ekc技术公司 | 同时具有表面钝化的铝蚀刻后残留物移除 |
| CN103305355B (zh) * | 2012-03-12 | 2019-01-15 | Ekc技术公司 | 同时具有表面钝化的铝蚀刻后残留物移除 |
| TWI593796B (zh) * | 2014-01-29 | 2017-08-01 | 台塑生醫科技股份有限公司 | 一種用於去除助焊劑的清潔劑組成物及其製品 |
| TWI732885B (zh) * | 2016-06-13 | 2021-07-11 | 美商艾萬拓有限責任公司 | 用於含鋁之微電子基板的清潔組合物 |
| CN113050329A (zh) * | 2019-12-27 | 2021-06-29 | 深圳新宙邦科技股份有限公司 | 一种聚酰亚胺型配向膜返工液 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2005043250A3 (en) | 2005-08-11 |
| WO2005043250B1 (en) | 2005-10-20 |
| EP1682944A2 (en) | 2006-07-26 |
| US20040147421A1 (en) | 2004-07-29 |
| US7135445B2 (en) | 2006-11-14 |
| KR20070003772A (ko) | 2007-01-05 |
| WO2005043250A2 (en) | 2005-05-12 |
| JP2007510173A (ja) | 2007-04-19 |
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