CN1871553A - 双胆碱和三胆碱在涂石英多晶硅和其它材料清洁中的用法 - Google Patents

双胆碱和三胆碱在涂石英多晶硅和其它材料清洁中的用法 Download PDF

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Publication number
CN1871553A
CN1871553A CNA200480031172XA CN200480031172A CN1871553A CN 1871553 A CN1871553 A CN 1871553A CN A200480031172X A CNA200480031172X A CN A200480031172XA CN 200480031172 A CN200480031172 A CN 200480031172A CN 1871553 A CN1871553 A CN 1871553A
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CN
China
Prior art keywords
composition according
composition
choline
photoresist
solvent
Prior art date
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Pending
Application number
CNA200480031172XA
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English (en)
Chinese (zh)
Inventor
R·W·查姆
D-L·周
R·J·斯莫尔
S·李
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EKC Technology Inc
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EKC Technology Inc
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Filing date
Publication date
Application filed by EKC Technology Inc filed Critical EKC Technology Inc
Publication of CN1871553A publication Critical patent/CN1871553A/zh
Pending legal-status Critical Current

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D11/00Special methods for preparing compositions containing mixtures of detergents
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3218Alkanolamines or alkanolimines
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3281Heterocyclic compounds
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/34Organic compounds containing sulfur
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/426Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CNA200480031172XA 2003-10-22 2004-10-22 双胆碱和三胆碱在涂石英多晶硅和其它材料清洁中的用法 Pending CN1871553A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/689,657 US7135445B2 (en) 2001-12-04 2003-10-22 Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials
US10/689,657 2003-10-22

Publications (1)

Publication Number Publication Date
CN1871553A true CN1871553A (zh) 2006-11-29

Family

ID=34549851

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA200480031172XA Pending CN1871553A (zh) 2003-10-22 2004-10-22 双胆碱和三胆碱在涂石英多晶硅和其它材料清洁中的用法

Country Status (6)

Country Link
US (1) US7135445B2 (enExample)
EP (1) EP1682944A2 (enExample)
JP (1) JP2007510173A (enExample)
KR (1) KR20070003772A (enExample)
CN (1) CN1871553A (enExample)
WO (1) WO2005043250A2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103305355A (zh) * 2012-03-12 2013-09-18 Ekc技术公司 同时具有表面钝化的铝蚀刻后残留物移除
TWI593796B (zh) * 2014-01-29 2017-08-01 台塑生醫科技股份有限公司 一種用於去除助焊劑的清潔劑組成物及其製品
CN113050329A (zh) * 2019-12-27 2021-06-29 深圳新宙邦科技股份有限公司 一种聚酰亚胺型配向膜返工液
TWI732885B (zh) * 2016-06-13 2021-07-11 美商艾萬拓有限責任公司 用於含鋁之微電子基板的清潔組合物

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7543592B2 (en) 2001-12-04 2009-06-09 Ekc Technology, Inc. Compositions and processes for photoresist stripping and residue removal in wafer level packaging
US8003587B2 (en) * 2002-06-06 2011-08-23 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US20060094613A1 (en) * 2004-10-29 2006-05-04 Lee Wai M Compositions and processes for photoresist stripping and residue removal in wafer level packaging
KR100639615B1 (ko) * 2004-11-02 2006-10-30 주식회사 하이닉스반도체 세정액 및 그를 이용한 반도체소자의 세정 방법
US20060094612A1 (en) * 2004-11-04 2006-05-04 Mayumi Kimura Post etch cleaning composition for use with substrates having aluminum
KR20060064441A (ko) * 2004-12-08 2006-06-13 말린크로트 베이커, 인코포레이티드 비수성 비부식성 마이크로전자 세정 조성물
US20060183654A1 (en) * 2005-02-14 2006-08-17 Small Robert J Semiconductor cleaning using ionic liquids
JP4988165B2 (ja) * 2005-03-11 2012-08-01 関東化学株式会社 フォトレジスト剥離液組成物及びフォトレジストの剥離方法
KR101088568B1 (ko) * 2005-04-19 2011-12-05 아반토르 퍼포먼스 머티리얼스, 인크. 갈바닉 부식을 억제하는 비수성 포토레지스트 스트립퍼
US7632796B2 (en) 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US9329486B2 (en) * 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
JP4734090B2 (ja) * 2005-10-31 2011-07-27 株式会社東芝 半導体装置の製造方法
US8288330B2 (en) * 2006-05-26 2012-10-16 Air Products And Chemicals, Inc. Composition and method for photoresist removal
CN101454872B (zh) * 2006-05-26 2011-04-06 Lg化学株式会社 光刻胶剥离剂组合物和用该光刻胶剥离剂组合物剥离光刻胶的方法
KR101488265B1 (ko) * 2007-09-28 2015-02-02 삼성디스플레이 주식회사 박리 조성물 및 박리 방법
JP2011502281A (ja) * 2007-10-31 2011-01-20 イー.ケー.シー.テクノロジー.インコーポレーテッド フォトレジスト剥離用化合物
KR20100007461A (ko) * 2008-07-14 2010-01-22 삼성전자주식회사 석영 부품용 세정액 및 이를 이용한 석영 부품 세정방법
MY160647A (en) * 2008-10-09 2017-03-15 Avantor Performance Mat Inc Aqueous acidic formulations for copper oxide etch residue removal and prevention of copper electrodeposition
JP4903242B2 (ja) * 2008-10-28 2012-03-28 アバントール パフォーマンス マテリアルズ, インコーポレイテッド 多金属デバイス処理のためのグルコン酸含有フォトレジスト洗浄組成物
JP2012516046A (ja) * 2009-01-22 2012-07-12 ビーエーエスエフ ソシエタス・ヨーロピア 化学機械的研磨後洗浄用組成物
JP2010222552A (ja) * 2009-02-24 2010-10-07 Sumitomo Chemical Co Ltd 洗浄用組成物及びそれを用いる液晶性ポリエステル製造装置の洗浄方法
KR101706987B1 (ko) * 2009-06-10 2017-02-15 주식회사 동진쎄미켐 유기절연막 박리액의 제조방법
MY185453A (en) * 2009-07-30 2021-05-19 Basf Se Post ion implant stripper for advanced semiconductor application
JP2013504782A (ja) * 2009-09-09 2013-02-07 ドンウ ファイン−ケム カンパニー.,リミティド. 銅系配線の形成のためのレジスト除去用組成物
US8101561B2 (en) * 2009-11-17 2012-01-24 Wai Mun Lee Composition and method for treating semiconductor substrate surface
US8058221B2 (en) * 2010-04-06 2011-11-15 Samsung Electronics Co., Ltd. Composition for removing a photoresist and method of manufacturing semiconductor device using the composition
US8449681B2 (en) * 2010-12-16 2013-05-28 Intermolecular, Inc. Composition and method for removing photoresist and bottom anti-reflective coating for a semiconductor substrate
US8889609B2 (en) * 2011-03-16 2014-11-18 Air Products And Chemicals, Inc. Cleaning formulations and method of using the cleaning formulations
PH12013502349A1 (en) * 2011-06-22 2014-01-06 Colgate Palmolive Co Choline salt cleaning compositions
EP2764079A4 (en) * 2011-10-05 2015-06-03 Avantor Performance Mat Inc MICROELECTRONIC SUBSTRATE CLEANING COMPOSITIONS HAVING COPPER / AZOLE POLYMER INHIBITION
US9158202B2 (en) 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
TWI591054B (zh) 2015-07-29 2017-07-11 藝康美國公司 用於烯烴或苯乙烯生產之重胺中和劑
JP6562789B2 (ja) * 2015-09-10 2019-08-21 キヤノン株式会社 除去対象物の除去方法
TWI705132B (zh) * 2015-10-08 2020-09-21 日商三菱瓦斯化學股份有限公司 半導體元件之洗淨用液體組成物、半導體元件之洗淨方法及半導體元件之製造方法
KR102384908B1 (ko) * 2015-11-25 2022-04-08 삼성전자주식회사 자성 패턴 세정 조성물, 자성 패턴 형성 방법 및 자기 메모리 장치의 제조 방법
KR102471495B1 (ko) * 2017-12-08 2022-11-28 헨켈 아게 운트 코. 카게아아 포토레지스트 스트리퍼 조성물
CA3110457A1 (en) 2018-08-30 2020-03-05 Huntsman Petrochemical Llc Quaternary ammonium hydroxides of polyamines

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4339340A (en) * 1975-11-26 1982-07-13 Tokyo Shibaura Electric Co., Ltd. Surface-treating agent adapted for intermediate products of a semiconductor device
GB1573206A (en) * 1975-11-26 1980-08-20 Tokyo Shibaura Electric Co Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices
JPS5351970A (en) * 1976-10-21 1978-05-11 Toshiba Corp Manufacture for semiconductor substrate
US4294911A (en) * 1979-06-18 1981-10-13 Eastman Kodak Company Development of light-sensitive quinone diazide compositions using sulfite stabilizer
US4403028A (en) * 1981-01-26 1983-09-06 Andrews Paper & Chemical Co., Inc. Light sensitive diazonium salts and diazotype materials
US4395479A (en) * 1981-09-23 1983-07-26 J. T. Baker Chemical Company Stripping compositions and methods of stripping resists
US4428871A (en) * 1981-09-23 1984-01-31 J. T. Baker Chemical Company Stripping compositions and methods of stripping resists
US4401747A (en) * 1982-09-02 1983-08-30 J. T. Baker Chemical Company Stripping compositions and methods of stripping resists
US4464461A (en) * 1983-07-22 1984-08-07 Eastman Kodak Company Development of light-sensitive quinone diazide compositions
US4617251A (en) * 1985-04-11 1986-10-14 Olin Hunt Specialty Products, Inc. Stripping composition and method of using the same
US4744834A (en) * 1986-04-30 1988-05-17 Noor Haq Photoresist stripper comprising a pyrrolidinone, a diethylene glycol ether, a polyglycol and a quaternary ammonium hydroxide
JPS62281323A (ja) 1986-05-30 1987-12-07 Nec Corp 半導体装置の製造方法
US4770713A (en) * 1986-12-10 1988-09-13 Advanced Chemical Technologies, Inc. Stripping compositions containing an alkylamide and an alkanolamine and use thereof
JPS63208043A (ja) 1987-02-25 1988-08-29 Kanto Kagaku Kk ポジ型フオトレジスト用水溶性剥離液
JP2553872B2 (ja) * 1987-07-21 1996-11-13 東京応化工業株式会社 ホトレジスト用剥離液
US4824763A (en) * 1987-07-30 1989-04-25 Ekc Technology, Inc. Triamine positive photoresist stripping composition and prebaking process
JP2578821B2 (ja) 1987-08-10 1997-02-05 東京応化工業株式会社 ポジ型ホトレジスト用剥離液
JPH0769618B2 (ja) 1987-09-25 1995-07-31 旭化成工業株式会社 フオトレジスト用剥離剤
JPH01191450A (ja) 1988-01-27 1989-08-01 Toshiba Corp 半導体装置の製造方法
JPH02275631A (ja) 1989-01-11 1990-11-09 Dainippon Screen Mfg Co Ltd 基板の洗浄処理方法及びその装置
JPH03227009A (ja) 1990-01-31 1991-10-08 Matsushita Electron Corp 半導体装置の製造方法
US5102777A (en) * 1990-02-01 1992-04-07 Ardrox Inc. Resist stripping
JP2527268B2 (ja) 1990-09-17 1996-08-21 東京応化工業株式会社 レジスト用剥離剤組成物
US5279771A (en) * 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
CA2062027C (en) * 1991-03-04 1998-05-19 William Aldrich Liquid control system for diagnostic cartridges used in analytical instruments
JPH04350660A (ja) 1991-05-28 1992-12-04 Texas Instr Japan Ltd 半導体装置製造用ポジ型フォトレジスト用剥離液および半導体装置の製造方法
JP3310318B2 (ja) 1991-12-27 2002-08-05 任天堂株式会社 データ処理システム
US5480585A (en) * 1992-04-02 1996-01-02 Nagase Electronic Chemicals, Ltd. Stripping liquid compositions
JPH0641773A (ja) 1992-05-18 1994-02-15 Toshiba Corp 半導体ウェーハ処理液
US5739579A (en) * 1992-06-29 1998-04-14 Intel Corporation Method for forming interconnections for semiconductor fabrication and semiconductor device having such interconnections
US6825156B2 (en) * 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US5308745A (en) * 1992-11-06 1994-05-03 J. T. Baker Inc. Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins
JP3244813B2 (ja) 1992-11-20 2002-01-07 株式会社東芝 半導体ウエハ処理液及び処理方法
US5417802A (en) * 1994-03-18 1995-05-23 At&T Corp. Integrated circuit manufacturing
JP3449651B2 (ja) 1994-09-16 2003-09-22 東京応化工業株式会社 レジスト剥離液組成物
US5635423A (en) * 1994-10-11 1997-06-03 Advanced Micro Devices, Inc. Simplified dual damascene process for multi-level metallization and interconnection structure
US5705430A (en) * 1995-06-07 1998-01-06 Advanced Micro Devices, Inc. Dual damascene with a sacrificial via fill
JP3614242B2 (ja) * 1996-04-12 2005-01-26 三菱瓦斯化学株式会社 フォトレジスト剥離剤及び半導体集積回路の製造方法
US5968848A (en) * 1996-12-27 1999-10-19 Tokyo Ohka Kogyo Co., Ltd. Process for treating a lithographic substrate and a rinse solution for the treatment
US6060439A (en) * 1997-09-29 2000-05-09 Kyzen Corporation Cleaning compositions and methods for cleaning resin and polymeric materials used in manufacture
JPH11197523A (ja) 1998-01-19 1999-07-27 Yamamoto Co Ltd 籾摺精米装置
JP3490604B2 (ja) * 1998-01-26 2004-01-26 多摩化学工業株式会社 第四アンモニウム塩基型半導体表面処理剤の製造方法
DK1105778T3 (da) * 1998-05-18 2009-10-19 Mallinckrodt Baker Inc Silikatholdige alkaliske sammensætninger til rensning af mikorelektroniske substrater
US6417112B1 (en) * 1998-07-06 2002-07-09 Ekc Technology, Inc. Post etch cleaning composition and process for dual damascene system
US6348239B1 (en) * 2000-04-28 2002-02-19 Simon Fraser University Method for depositing metal and metal oxide films and patterned films
US6235693B1 (en) * 1999-07-16 2001-05-22 Ekc Technology, Inc. Lactam compositions for cleaning organic and plasma etched residues for semiconductor devices
US6531436B1 (en) * 2000-02-25 2003-03-11 Shipley Company, L.L.C. Polymer removal
US6475966B1 (en) * 2000-02-25 2002-11-05 Shipley Company, L.L.C. Plasma etching residue removal
KR100764888B1 (ko) * 2000-07-10 2007-10-09 이케이씨 테크놀로지, 인코포레이티드 반도체 장치용의 유기 및 플라즈마 식각된 잔사의 세척을위한 조성물
JP2003005383A (ja) * 2000-11-30 2003-01-08 Tosoh Corp レジスト剥離剤
JP2004538503A (ja) * 2001-07-13 2004-12-24 イーケーシー テクノロジー,インコーポレイティド スルホキシド−ピロリドン(ピロリジノン)−アルカノールアミン系剥離および洗浄組成物

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CN103305355A (zh) * 2012-03-12 2013-09-18 Ekc技术公司 同时具有表面钝化的铝蚀刻后残留物移除
CN103305355B (zh) * 2012-03-12 2019-01-15 Ekc技术公司 同时具有表面钝化的铝蚀刻后残留物移除
TWI593796B (zh) * 2014-01-29 2017-08-01 台塑生醫科技股份有限公司 一種用於去除助焊劑的清潔劑組成物及其製品
TWI732885B (zh) * 2016-06-13 2021-07-11 美商艾萬拓有限責任公司 用於含鋁之微電子基板的清潔組合物
CN113050329A (zh) * 2019-12-27 2021-06-29 深圳新宙邦科技股份有限公司 一种聚酰亚胺型配向膜返工液

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US20040147421A1 (en) 2004-07-29
US7135445B2 (en) 2006-11-14
KR20070003772A (ko) 2007-01-05
WO2005043250A2 (en) 2005-05-12
JP2007510173A (ja) 2007-04-19

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