WO2005109108A8 - Composition for removing a (photo) resist - Google Patents

Composition for removing a (photo) resist

Info

Publication number
WO2005109108A8
WO2005109108A8 PCT/KR2005/001327 KR2005001327W WO2005109108A8 WO 2005109108 A8 WO2005109108 A8 WO 2005109108A8 KR 2005001327 W KR2005001327 W KR 2005001327W WO 2005109108 A8 WO2005109108 A8 WO 2005109108A8
Authority
WO
WIPO (PCT)
Prior art keywords
remover composition
photoresist remover
present
anticorrosive agent
compounds
Prior art date
Application number
PCT/KR2005/001327
Other languages
French (fr)
Other versions
WO2005109108A1 (en
Inventor
Byung-Uk Kim
Suk-Il Yoon
Seong-Bae Kim
Wy-Yong Kim
Suk-Chang Jang
Jong-Hyun Jeong
Original Assignee
Dongjin Semichem Co Ltd
Byung-Uk Kim
Suk-Il Yoon
Seong-Bae Kim
Wy-Yong Kim
Suk-Chang Jang
Jong-Hyun Jeong
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co Ltd, Byung-Uk Kim, Suk-Il Yoon, Seong-Bae Kim, Wy-Yong Kim, Suk-Chang Jang, Jong-Hyun Jeong filed Critical Dongjin Semichem Co Ltd
Priority to CN200580014564XA priority Critical patent/CN1950755B/en
Priority to JP2007511290A priority patent/JP2007536566A/en
Publication of WO2005109108A1 publication Critical patent/WO2005109108A1/en
Publication of WO2005109108A8 publication Critical patent/WO2005109108A8/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The present invention relates to a photoresist remover composition used in making circuit or display device patterns, more particularly to a photoresist remover composition containing amine, solvent and anticorrosive agent, the anticorrosive agent being at least one compound selected from a group consisting of triazole compounds, mercapto compounds, organic phenol compounds containing a hydroxyl group, and a mixture thereof. The photoresist remover composition of the present invention can easily and quickly remove a resist film and can minimize corrosion of the patterned metallic circuitry.
PCT/KR2005/001327 2004-05-07 2005-05-06 Composition for removing a (photo) resist WO2005109108A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200580014564XA CN1950755B (en) 2004-05-07 2005-05-06 composition for removing photoresist
JP2007511290A JP2007536566A (en) 2004-05-07 2005-05-06 (Photo) Composition for resist removal

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20040032111 2004-05-07
KR10-2004-0032111 2004-05-07

Publications (2)

Publication Number Publication Date
WO2005109108A1 WO2005109108A1 (en) 2005-11-17
WO2005109108A8 true WO2005109108A8 (en) 2007-01-11

Family

ID=35320363

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2005/001327 WO2005109108A1 (en) 2004-05-07 2005-05-06 Composition for removing a (photo) resist

Country Status (5)

Country Link
JP (1) JP2007536566A (en)
KR (1) KR101167240B1 (en)
CN (1) CN1950755B (en)
TW (1) TWI385159B (en)
WO (1) WO2005109108A1 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100893279B1 (en) * 2006-08-03 2009-04-17 테크노세미켐 주식회사 Photoresist stripper composition for semiconductor manufacturing
TWI417683B (en) * 2006-02-15 2013-12-01 Avantor Performance Mat Inc Stabilized, non-aqueous cleaning compositions for microelectronics substrates
KR101251594B1 (en) * 2006-03-23 2013-04-08 주식회사 동진쎄미켐 Chemical rinse composition for removing resist stripper
JP4902299B2 (en) * 2006-09-11 2012-03-21 三星電子株式会社 Manufacturing method of display device
KR101292497B1 (en) * 2007-01-12 2013-08-01 동우 화인켐 주식회사 Resist stripper composition and stripping method of resist using the same
WO2011037300A1 (en) * 2009-09-25 2011-03-31 주식회사 엘지화학 Photoresist stripper composition and photoresist peeling method employing same
WO2011065603A1 (en) * 2009-11-26 2011-06-03 주식회사 엘지화학 Photoresist stripper composition, and method of stripping photoresist using same
KR101008373B1 (en) * 2009-11-26 2011-01-13 주식회사 엘지화학 Stripper composition for photoresist and method for stripping photoresist
TWI405053B (en) * 2009-11-27 2013-08-11 Lg Chemical Ltd Stripper composition for photoresist and method for stripping photoresist
KR101679030B1 (en) * 2009-12-16 2016-11-23 주식회사 동진쎄미켐 Stripper composition of photoresist
WO2012166902A1 (en) * 2011-06-01 2012-12-06 Avantor Performance Materials, Inc. SEMI-AQUEOUS POLYMER REMOVAL COMPOSITIONS WITH ENHANCED COMPATIBILITY TO COPPER, TUNGSTEN, AND POROUS LOW-ĸ DIELECTRICS
US20140273458A1 (en) * 2013-03-12 2014-09-18 Air Products And Chemicals, Inc. Chemical Mechanical Planarization for Tungsten-Containing Substrates
KR101668063B1 (en) * 2013-05-07 2016-10-20 주식회사 엘지화학 Stripper composition for removing photoresist and stripping mthod of photoresist using the same
CN103425001A (en) * 2013-07-19 2013-12-04 杨桂望 Resist membrane cleaning composition
WO2016084860A1 (en) * 2014-11-27 2016-06-02 富士フイルム株式会社 Removal liquid, removal method using same, and method for manufacturing semiconductor substrate product
KR20170127527A (en) * 2015-04-10 2017-11-21 후지필름 가부시키가이샤 A resist removing liquid, a resist removing method, and a manufacturing method of a regenerated semiconductor substrate
KR102572751B1 (en) 2016-03-15 2023-08-31 동우 화인켐 주식회사 Resist stripper composition and method of stripping resist using the same

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60131535A (en) * 1983-12-20 1985-07-13 エッチエムシー・パテンツ・ホールディング・カンパニー・インコーポレーテッド Stripping composition for positive photoresist
JP2578821B2 (en) * 1987-08-10 1997-02-05 東京応化工業株式会社 Stripper for positive photoresist
US6326130B1 (en) * 1993-10-07 2001-12-04 Mallinckrodt Baker, Inc. Photoresist strippers containing reducing agents to reduce metal corrosion
US5798323A (en) * 1997-05-05 1998-08-25 Olin Microelectronic Chemicals, Inc. Non-corrosive stripping and cleaning composition
JP2000056480A (en) * 1998-08-10 2000-02-25 Tokyo Ohka Kogyo Co Ltd Resist stripping solution composition and resist stripping method by using same
CN1196032C (en) * 1998-08-11 2005-04-06 东进世美肯株式会社 Stripping agent, stripping method, stripping agent circulation equipment and stripping agent controller
JP2000250231A (en) * 1999-03-03 2000-09-14 Nagase Denshi Kagaku Kk Photoresist remover composition and method for using same
JP2002062668A (en) 2000-08-14 2002-02-28 Mitsubishi Gas Chem Co Inc Method for removing photoresist
JP4442017B2 (en) * 2000-10-11 2010-03-31 東ソー株式会社 Resist stripper
US6599370B2 (en) * 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
KR100822236B1 (en) * 2000-11-30 2008-04-16 토소가부시키가이샤 Resist release agent
JP2002244310A (en) * 2001-02-21 2002-08-30 Tosoh Corp Resist removing agent
KR100438015B1 (en) * 2001-10-10 2004-06-30 엘지.필립스 엘시디 주식회사 Cu-compatible Resist removing composition
US20030138737A1 (en) * 2001-12-27 2003-07-24 Kazumasa Wakiya Photoresist stripping solution and a method of stripping photoresists using the same
JP2003270801A (en) * 2002-03-13 2003-09-25 Nippon Zeon Co Ltd Resist stripping solution composition and stripping method using the same
JP4304909B2 (en) * 2002-04-03 2009-07-29 東ソー株式会社 Cleaning agent and cleaning method using the same
US6951710B2 (en) * 2003-05-23 2005-10-04 Air Products And Chemicals, Inc. Compositions suitable for removing photoresist, photoresist byproducts and etching residue, and use thereof
JP4405767B2 (en) * 2003-08-28 2010-01-27 ソニー株式会社 Composition for removing photoresist on substrate containing silver and / or silver alloy, method for producing pattern using the same, and display device including the same
US8338087B2 (en) * 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate

Also Published As

Publication number Publication date
CN1950755A (en) 2007-04-18
KR20060045957A (en) 2006-05-17
KR101167240B1 (en) 2012-07-23
CN1950755B (en) 2011-05-11
WO2005109108A1 (en) 2005-11-17
TWI385159B (en) 2013-02-11
TW200536836A (en) 2005-11-16
JP2007536566A (en) 2007-12-13

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