TW200801856A - Composition for removing photoresist - Google Patents

Composition for removing photoresist

Info

Publication number
TW200801856A
TW200801856A TW096122564A TW96122564A TW200801856A TW 200801856 A TW200801856 A TW 200801856A TW 096122564 A TW096122564 A TW 096122564A TW 96122564 A TW96122564 A TW 96122564A TW 200801856 A TW200801856 A TW 200801856A
Authority
TW
Taiwan
Prior art keywords
composition
resist
metal wiring
removing photoresist
molybdenum
Prior art date
Application number
TW096122564A
Other languages
Chinese (zh)
Other versions
TWI432920B (en
Inventor
Seong-Bae Kim
Suk-Il Yoon
Jong-Hyun Jeong
Soon-Beom Huh
Hee-Jin Park
Sung-Gun Shin
Se-Hwan Jung
Hyun Huh
Byung-Uk Kim
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Publication of TW200801856A publication Critical patent/TW200801856A/en
Application granted granted Critical
Publication of TWI432920B publication Critical patent/TWI432920B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/52—Carboxylic amides, alkylolamides or imides or their condensation products with alkylene oxides
    • C11D1/526—Carboxylic amides (R1-CO-NR2R3), where R1, R2 or R3 are polyalkoxylated
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/044—Hydroxides or bases
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2068—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)

Abstract

The invention is to provide a composition for removing a resist, the composition excellent in resist stripping power without corroding metal wiring, in particular, aluminum, molybdenum, copper, titanium or the like upon removing a resist film for patterning metal wiring to obtain an electronic circuit or a display element. The composition comprises (a) a diamine compound by 1 to 20 mass% and (b) the balance of a glycol ether compound. The composition may further contain a polar solvent.
TW096122564A 2006-06-22 2007-06-22 Composition for removing photoresist TWI432920B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20060056473 2006-06-22
KR1020070058536A KR101403515B1 (en) 2006-06-22 2007-06-14 Composition for removing photoresist

Publications (2)

Publication Number Publication Date
TW200801856A true TW200801856A (en) 2008-01-01
TWI432920B TWI432920B (en) 2014-04-01

Family

ID=38991671

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096122564A TWI432920B (en) 2006-06-22 2007-06-22 Composition for removing photoresist

Country Status (3)

Country Link
KR (1) KR101403515B1 (en)
CN (1) CN101093365B (en)
TW (1) TWI432920B (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101399502B1 (en) * 2008-09-19 2014-06-27 주식회사 동진쎄미켐 Remover composition for removing Thermosetting resin of TFT-LCD
KR20100070087A (en) * 2008-12-17 2010-06-25 삼성전자주식회사 Composition for photoresist stripper and method of fabricating thin film transistor array substrate
CN101921502B (en) * 2009-06-11 2012-07-04 宝山钢铁股份有限公司 Paint remover for removing cathodic electrophoretic paint film on surface of steel plate
KR20110007828A (en) * 2009-07-17 2011-01-25 동우 화인켐 주식회사 Stripper composition for copper or copper alloy interconnection
KR20110053557A (en) * 2009-11-16 2011-05-24 동우 화인켐 주식회사 A resist stripper composition
CN105143984B (en) * 2013-03-07 2017-09-05 株式会社Lg化学 Method for removing the remover combination of photoresist and photoresist being peeled off using it
KR101764577B1 (en) * 2015-08-13 2017-08-23 엘티씨 (주) Composition of stripping solution for liquid crystal display process photoresist
KR102414295B1 (en) * 2016-01-22 2022-06-30 주식회사 이엔에프테크놀로지 Photoresist stripper composition
KR102512488B1 (en) * 2017-03-03 2023-03-22 주식회사 이엔에프테크놀로지 Photoresist stripper composition
CN107765514B (en) * 2017-11-17 2019-03-05 上海新阳半导体材料股份有限公司 One kind cleaning solution containing azanol, preparation method and application
KR102528302B1 (en) * 2018-02-05 2023-05-04 삼성디스플레이 주식회사 Resist stripper composition and stripping method of resist using the same
CN108375880B (en) * 2018-02-08 2021-11-19 上海新阳半导体材料股份有限公司 Plasma etching cleaning liquid, preparation method and application thereof
CN113614648A (en) * 2019-03-25 2021-11-05 松下知识产权经营株式会社 Resist stripping liquid
JP6692029B1 (en) * 2019-03-25 2020-05-13 パナソニックＩｐマネジメント株式会社 Resist stripper
CN115236953A (en) * 2021-04-22 2022-10-25 金�雄 Stripper composition for removing photoresist and method for stripping photoresist using the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4617251A (en) * 1985-04-11 1986-10-14 Olin Hunt Specialty Products, Inc. Stripping composition and method of using the same
US6825156B2 (en) * 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US5308745A (en) * 1992-11-06 1994-05-03 J. T. Baker Inc. Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins
KR100288769B1 (en) * 1998-07-10 2001-09-17 윤종용 Stripper composition for photoresist
JP4405767B2 (en) * 2003-08-28 2010-01-27 ソニー株式会社 Composition for removing photoresist on substrate containing silver and / or silver alloy, method for producing pattern using the same, and display device including the same
KR20060064441A (en) * 2004-12-08 2006-06-13 말린크로트 베이커, 인코포레이티드 Non-aqueous, non-corrosive microelectronic cleaning compositions

Also Published As

Publication number Publication date
KR20070121523A (en) 2007-12-27
CN101093365A (en) 2007-12-26
KR101403515B1 (en) 2014-06-09
TWI432920B (en) 2014-04-01
CN101093365B (en) 2013-02-20

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