CN115236953A - Stripper composition for removing photoresist and method for stripping photoresist using the same - Google Patents
Stripper composition for removing photoresist and method for stripping photoresist using the same Download PDFInfo
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- CN115236953A CN115236953A CN202210426174.9A CN202210426174A CN115236953A CN 115236953 A CN115236953 A CN 115236953A CN 202210426174 A CN202210426174 A CN 202210426174A CN 115236953 A CN115236953 A CN 115236953A
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- Prior art keywords
- photoresist
- chemical formula
- stripper composition
- ether
- compound
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 142
- 239000000203 mixture Substances 0.000 title claims abstract description 87
- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000000126 substance Substances 0.000 claims description 63
- -1 amine compound Chemical class 0.000 claims description 52
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 28
- 150000001875 compounds Chemical class 0.000 claims description 22
- 239000010949 copper Substances 0.000 claims description 22
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 16
- 230000007797 corrosion Effects 0.000 claims description 16
- 238000005260 corrosion Methods 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000003495 polar organic solvent Substances 0.000 claims description 12
- 239000003795 chemical substances by application Substances 0.000 claims description 9
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 claims description 8
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 claims description 6
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 125000002947 alkylene group Chemical group 0.000 claims description 5
- 239000003112 inhibitor Substances 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 5
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 4
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- MBHINSULENHCMF-UHFFFAOYSA-N n,n-dimethylpropanamide Chemical compound CCC(=O)N(C)C MBHINSULENHCMF-UHFFFAOYSA-N 0.000 claims description 4
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 4
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 claims description 3
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 claims description 3
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 claims description 3
- JKEHLQXXZMANPK-UHFFFAOYSA-N 1-[1-(1-propoxypropan-2-yloxy)propan-2-yloxy]propan-2-ol Chemical compound CCCOCC(C)OCC(C)OCC(C)O JKEHLQXXZMANPK-UHFFFAOYSA-N 0.000 claims description 3
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 claims description 3
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 claims description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 3
- BQCCJWMQESHLIT-UHFFFAOYSA-N 1-propylsulfinylpropane Chemical compound CCCS(=O)CCC BQCCJWMQESHLIT-UHFFFAOYSA-N 0.000 claims description 3
- DJCYDDALXPHSHR-UHFFFAOYSA-N 2-(2-propoxyethoxy)ethanol Chemical compound CCCOCCOCCO DJCYDDALXPHSHR-UHFFFAOYSA-N 0.000 claims description 3
- XYVAYAJYLWYJJN-UHFFFAOYSA-N 2-(2-propoxypropoxy)propan-1-ol Chemical compound CCCOC(C)COC(C)CO XYVAYAJYLWYJJN-UHFFFAOYSA-N 0.000 claims description 3
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 claims description 3
- JDSQBDGCMUXRBM-UHFFFAOYSA-N 2-[2-(2-butoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCOC(C)COC(C)COC(C)CO JDSQBDGCMUXRBM-UHFFFAOYSA-N 0.000 claims description 3
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 claims description 3
- FMVOPJLFZGSYOS-UHFFFAOYSA-N 2-[2-(2-ethoxypropoxy)propoxy]propan-1-ol Chemical compound CCOC(C)COC(C)COC(C)CO FMVOPJLFZGSYOS-UHFFFAOYSA-N 0.000 claims description 3
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 claims description 3
- KCBPVRDDYVJQHA-UHFFFAOYSA-N 2-[2-(2-propoxyethoxy)ethoxy]ethanol Chemical compound CCCOCCOCCOCCO KCBPVRDDYVJQHA-UHFFFAOYSA-N 0.000 claims description 3
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 3
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- CCAFPWNGIUBUSD-UHFFFAOYSA-N diethyl sulfoxide Chemical compound CCS(=O)CC CCAFPWNGIUBUSD-UHFFFAOYSA-N 0.000 claims description 3
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 3
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 3
- 150000003852 triazoles Chemical class 0.000 claims description 3
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910001020 Au alloy Inorganic materials 0.000 claims 1
- 239000003353 gold alloy Substances 0.000 claims 1
- 238000004140 cleaning Methods 0.000 abstract description 24
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 230000000052 comparative effect Effects 0.000 description 8
- 238000005536 corrosion prevention Methods 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 229910021642 ultra pure water Inorganic materials 0.000 description 8
- 239000012498 ultrapure water Substances 0.000 description 8
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000005160 1H NMR spectroscopy Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 229910001431 copper ion Inorganic materials 0.000 description 3
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003405 preventing effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 1
- QZXIXSZVEYUCGM-UHFFFAOYSA-N 2-aminopropan-2-ol Chemical compound CC(C)(N)O QZXIXSZVEYUCGM-UHFFFAOYSA-N 0.000 description 1
- RELOFIKZGIJATN-UHFFFAOYSA-N 2-imidazolidin-1-ylethanol Chemical compound OCCN1CCNC1 RELOFIKZGIJATN-UHFFFAOYSA-N 0.000 description 1
- WFCSWCVEJLETKA-UHFFFAOYSA-N 2-piperazin-1-ylethanol Chemical compound OCCN1CCNCC1 WFCSWCVEJLETKA-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N EtOH Substances CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- IMUDHTPIFIBORV-UHFFFAOYSA-N aminoethylpiperazine Chemical compound NCCN1CCNCC1 IMUDHTPIFIBORV-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- LIWAQLJGPBVORC-UHFFFAOYSA-N ethylmethylamine Chemical compound CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 description 1
- 239000008098 formaldehyde solution Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000004451 qualitative analysis Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000010898 silica gel chromatography Methods 0.000 description 1
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- 230000002195 synergetic effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
Abstract
The present invention relates to a stripper composition for removing photoresist in a process of manufacturing FPD (LCD, OLED) and a method using the same. Specifically, the stripper composition for removing photoresist according to the present invention can strip photoresist not only at low temperature but also in a short time, but also can strip without surface damage to the lower film while leaving no photoresist residue on the substrate after cleaning.
Description
Technical Field
The present invention relates to a stripper composition for removing photoresist and a method for stripping photoresist using the same.
Background
Generally, a fine circuit of a Flat Panel Display (FPD) device of an LED, an OLED, or the like is realized by a photolithography process. The photolithography process 1) uniformly coats a photoresist on a conductive metal film or an insulating film formed on a substrate, 2) selectively performs exposure and development processes on them to form a photoresist pattern, 3) performs wet or dry etching on the conductive metal film or the insulating film using the patterned photoresist film as a mask to transfer a fine circuit pattern onto a photoresist underlayer, 4) removes an unnecessary photoresist layer with a stripper composition.
The photoresist stripper composition is required to strip the photoresist in a short time even at a low temperature, the damage of the insulating layer and the metal layer is required to be reduced to the maximum in the stripping process, and the stripped photoresist and the residue of the stripper composition are required to be ensured not to remain on the substrate after cleaning.
In addition, recently, along with the demand for large area, ultra-fine, and high resolution of displays, it is actively proposed not to use a copper (Cu) wiring pattern having excellent specific resistance characteristics and electromigration characteristics. However, since the conventional stripping agent composition is highly corrosive to copper, in the case of using it as a stripping agent for copper wiring, there is a problem that fine stains and residues occur due to damage of an underlying film containing copper.
Thus, although attempts have been made to develop a stripper composition having low corrosiveness to copper, such as an anticorrosive additive, there are limitations that the stripper composition has little effect of preventing copper damage, causes a decrease in photoresist stripping performance, and is not easily cleaned from the substrate surface even after cleaning.
That is, there is a strong demand for the development of a stripper composition having excellent stripping force and cleaning force for a photoresist and also excellent corrosion prevention effect for an underlayer containing copper.
Documents of the prior art
Patent document
KR 10-2016-0114360 A
KR 10-2017-0029285 A
Disclosure of Invention
Technical problem
The present invention has been made to solve the above problems, and an object of the present invention is to provide a stripper composition for removing a photoresist, which has excellent corrosion resistance to an underlayer film and excellent stripping force to the photoresist.
Further, the present invention provides a stripping method of a photoresist using the stripper composition for removing a photoresist.
Means for solving the problems
For the above purpose, the present invention provides a stripper composition for removing a photoresist, which comprises an amine compound represented by the following chemical formula 1.
[ chemical formula 1]
(in the chemical formula 1,
R 1 and R 2 Each independently is hydrogen, (C1-C10) alkyl or hydroxy (C1-C10) alkyl,
L 1 and L 2 Each independently is (C1-C12) alkylene, and L 1 And L 2 Of alkylene of (a) — CH 2 -may be substituted with-O-. )
The amine compound represented by the chemical formula 1 according to an embodiment of the present invention may be represented by the following chemical formula 2, chemical formula 3, or chemical formula 4.
[ chemical formula 2]
[ chemical formula 3]
[ chemical formula 4]
(in the chemical formulas 2 to 4,
a. b, c, d, e and f are each independently an integer of 1 or 2.
The stripper composition for removing photoresist according to an embodiment of the present invention may include the amine compound of chemical formula 1, an aprotic polar organic solvent, and a glycol-based compound.
The aprotic polar organic solvent according to an embodiment of the present invention may include one or more selected from the group consisting of N, N-dimethylpropionamide, N-methylformamide, dimethyl sulfoxide, dimethylacetamide, diethyl sulfoxide, dipropyl sulfoxide, sulfolane, N-methylpyrrolidone, pyrrolidone, N-ethylpyrrolidone, dipropylene glycol monoethyl ether, and N, N' -dialkylformamide.
The glycol-based compound according to an embodiment of the present invention may be an alkylene glycol monoalkyl ether.
The alkylene glycol monoalkyl ether according to an embodiment of the present invention may comprise one or more selected from the group consisting of ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monopropyl ether, dipropylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monopropyl ether, triethylene glycol monobutyl ether, tripropylene glycol monomethyl ether, tripropylene glycol monoethyl ether, tripropylene glycol monopropyl ether, and tripropylene glycol monobutyl ether.
The stripper composition for removing photoresist according to an embodiment of the present invention may further include an anticorrosive agent.
The corrosion inhibitor according to an embodiment of the present invention may include one or more selected from the group consisting of a benzimidazolyl compound, a triazolyl compound, and a tetrazolyl compound.
The triazole-based compound according to an embodiment of the present invention may include a compound of the following chemical formula 5.
[ chemical formula 5]
The benzimidazolyl compound according to an embodiment of the present invention may include a compound of the following chemical formula 6.
[ chemical formula 6]
The stripper composition for removing photoresist according to an embodiment of the present invention may include 30 to 60 wt% of an aprotic polar organic solvent, 20 to 60 wt% of a glycol-based compound, 0.1 to 10 wt% of the compound of chemical formula 1, and 0.005 to 0.6 wt% of an anticorrosive, with respect to the total weight of the whole stripper composition for removing photoresist.
Further, the present invention provides a photoresist stripping method including: forming a photoresist pattern on the substrate on which the lower film is formed; patterning a lower film with the photoresist pattern; and stripping the photoresist using the stripper composition for removing the photoresist.
The lower film according to an embodiment of the present invention may include an insulating film including a metal film including aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), or an alloy thereof, a silicon oxide film, or a silicon nitride film, or a combination thereof.
Effects of the invention
The stripper composition according to the present invention can not leave stains and residues on a substrate after cleaning because it is excellent in corrosion prevention capability to an underlying film and, at the same time, is very excellent in stripping force to a photoresist.
Specifically, the photoresist can be stripped in a short time even at a low temperature, so that the stripping rate can be further increased, and the stripped photoresist is excellent in dissolving power, so that no photoresist residue remains on the substrate after cleaning. Meanwhile, since the photoresist composition has excellent corrosion resistance to an insulating film, a metal film, and the like as an underlayer, it is possible to selectively and rapidly strip off only the photoresist without generating stains and damages on the underlayer.
Further, the stripping force of the stripper composition according to the present invention can be maintained for a long time as time passes, and since the dissolving force for the stripped photoresist is excellent, defects such as filter clogging in the process can be minimized. Further, the stripper composition according to the present invention can be perfectly removed only by a cleaning process by ultrapure water, and thus does not remain on the substrate after cleaning.
In contrast, the economy and efficiency of the process can be improved, and a highly reliable semiconductor device can be provided by a very economical method.
Drawings
FIG. 1 is a Scanning Electron Microscope (SEM) photograph of a sample cross-section showing photoresist stripping force parity according to example 1.
FIG. 2 is a Scanning Electron Microscope (SEM) photograph of the surface of a sample in which the corrosion resistance of the lower film according to example 1 is flat.
Detailed Description
Hereinafter, the present invention will be described in more detail. Technical terms and scientific terms used at this time have meanings that are commonly understood by those of ordinary skill in the art to which the present invention belongs unless otherwise defined, and descriptions of well-known functions and configurations that may obscure the gist of the present invention are omitted in the following description.
As used in this specification, the singular forms "a", "an", and "the" may also be intended to include the plural forms as well, unless the context specifically indicates otherwise.
Units used in cases where no particular mention is made in this specification are based on weight, as an example, the unit of% or ratio means wt% or wt ratio, and unless otherwise defined wt% means the wt% of any one ingredient in the entire composition in the composition.
The word "comprising" in this specification is an open-ended description with the meaning equivalent to the word "provided with", "containing", "having" or "as a feature", and the like, and does not exclude elements, materials or processes that are not further listed.
The term "residue" in the present specification may be a by-product generated from a substrate used in the semiconductor industry after etching or ashing, and may mean a contaminant particle or a contaminant layer containing an organic material or an inorganic material that may exist on the substrate after the process.
The conventional stripper composition has a problem in that the metal layer or the insulating layer is unnecessarily etched or surface damage of the metal layer is caused. In order to solve such problems, there have been proposed various compositions using an anticorrosive additive, however, these additives have limitations that the stripping property for the photoresist is lowered, or it is not easily washed off from the surface of the substrate after the washing is completed, and the like.
In this regard, the present invention provides a stripper composition for removing photoresist, which comprises a novel amine compound excellent in stripping force for photoresist, an aprotic polar organic solvent, a glycol-based compound and an anticorrosive. The stripper composition according to the present invention has an advantage of being excellent in corrosion prevention capability for an underlying film and stripping force and cleaning force for a photoresist, along with adopting the configuration combination as described above.
The present invention will be specifically described below.
The stripper composition for removing photoresist according to the present invention may include an amine compound represented by the following chemical formula 1.
[ chemical formula 1]
(in the chemical formula 1,
R 1 and R 2 Each independently is hydrogen, (C1-C10) alkyl or hydroxy (C1-C10) alkyl,
L 1 and L 2 Each independently is (C1-C12) ylideneAlkyl, and said L 1 And L 2 Of alkylene of (a) — CH 2 -may be substituted with-O-. )
Preferably, the R according to an embodiment of the present invention 1 And R 2 Are identical to each other and are hydrogen or hydroxy (C1-C10) alkyl. More specifically, the amine compound represented by the chemical formula 1 according to an embodiment of the present invention may be represented by the following chemical formula 2, chemical formula 3, or chemical formula 4.
[ chemical formula 2]
[ chemical formula 3]
[ chemical formula 4]
(in the chemical formulae 2 to 4,
a. b, c and d are each independently an integer of 1 to 5, and e and f are each independently an integer of 1 to 3. )
As an example, in the chemical formula 2, a to d may be respectively and independently an integer of 1 to 3, and may be 1 or 2, in particular.
As an example, in the chemical formula 3, a and b may be respectively and independently an integer of 1 to 3, and may be 1 or 2, in particular.
As an example, in the chemical formula 4, e and f may be 1 or 2, respectively, independently.
As an example, in chemical formula 2, a to d may be identical to each other, in chemical formula 3, a and b may be identical to each other, and in chemical formula 4, e and f may be identical to each other.
More preferably, the amine compound according to an embodiment of the present invention may be selected from the following chemical formula 2-1, chemical formula 3-1, or chemical formula 4-1, but is not limited thereto.
[ chemical formula 2-1]
[ chemical formula 3-1]
[ chemical formula 4-1]
The amine compound according to an embodiment of the present invention may function to melt and remove the bonding structure of the photoresist as having the structural characteristics as described above, and may achieve a very excellent stripping force for the photoresist. Thus, it is possible to prevent the deterioration of the economy and efficiency of the process caused by the use of an excessive amount of amine in the conventional stripping agent composition, and to significantly reduce the amount of waste liquid and the like generated. Further, the photoresist can be peeled off perfectly in a short time even at a low temperature, and surface damage of the lower film containing copper or the like can be reduced to the maximum.
The amine compound according to an embodiment of the present invention may include 0.1 to 10 wt%, and preferably may include 1 to 6 wt%, and more preferably may include 2 to 5.5 wt% with respect to the total weight of the entire stripper composition.
In the numerical range, the effect to be achieved by the present invention, that is, the corrosion preventing effect for the lower film containing copper while being excellent in the peeling force and the cleaning force for the photoresist is remarkable is exhibited without affecting the stability of the composition, and thus it is preferable.
The amine compound may be used in admixture with an amine compound generally used in this field, as required. As non-limiting examples thereof, there can be selected from linear amine compounds such as diethanolamine, 2-aminoethoxy) -1-ethanol, aminoethylethanolamine, monomethanolamine, monoethanolamine, N-methylethylamine, 1-aminoisopropanol, methyldimethylamine, diethylenetriamine and triethylenetetramine, and cyclic amine compounds such as 1-imidazolidineethanol, aminoethylpiperazine and hydroxyethylpiperazine, and the like.
The aprotic polar organic solvent according to an embodiment of the present invention may be exemplified by N, N-dimethylpropionamide, N-methylformamide, dimethylsulfoxide, dimethylacetamide, diethylsulfoxide, dipropylsulfoxide, sulfolane, N-methylpyrrolidone, pyrrolidone, N-ethylpyrrolidone, dipropylene glycol monoethyl ether, and N, N' -dialkylformamide, and the like, may be one or a mixed solvent of two or more selected from them, and may more preferably, but not limited to, use of N, N-dimethylpropionamide or N-methylformamide.
The aprotic polar organic solvent according to an embodiment of the present invention may include 30 to 60 wt%, preferably may include 35 to 60 wt%, and more preferably may include 40 to 58 wt% with respect to the total weight of the entire composition.
The aprotic polar organic solvent satisfies the numerical range as described above while being mixed with the amine compound, so that more remarkable effects can be achieved. Specifically, the amine compound is made readily soluble in the stripper composition, and the stripper composition is made to appropriately permeate into the photoresist pattern and the lower film. In this case, the release agent composition according to the present invention can maximize the excellent release force and cleaning force.
Further, the stripper composition for removing photoresist according to an embodiment of the present invention may also contain water to be used as a water-based stripping composition, in addition to the above-mentioned aprotic polar organic solvent. In the case where water is optionally contained, the content thereof may be determined within an appropriate range among the ranges of the content of the aprotic organic solvent.
The glycol-based compound according to an embodiment of the present invention may be an alkylene glycol monoalkyl ether, and as non-limiting examples thereof, the alkylene glycol monoalkyl ether may be exemplified by ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monopropyl ether, dipropylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monopropyl ether, triethylene glycol monobutyl ether, tripropylene glycol monomethyl ether, tripropylene glycol monoethyl ether, tripropylene glycol monopropyl ether, tripropylene glycol monobutyl ether, and the like, may be one or two or more selected therefrom, and more preferably, the diethylene glycol monomethyl ether or the diethylene glycol monobutyl ether is used without limitation.
The one or two or more glycol-based compounds according to an embodiment of the present invention may include 20 to 60 wt%, preferably may include 30 to 60 wt%, and more preferably may include 35 to 55 wt% with respect to the total weight of the composition.
In the case where the glycol-based compound satisfies the above numerical range, wettability (humidity) to the photoresist can be improved by reducing the surface tension of the stripper composition, and an excellent stripping force to the hardened or deteriorated photoresist can also serve to improve the dissolution force to the stripped photoresist. In addition, excellent compatibility between various organic substances present in the stripper composition according to the present invention can be imparted. In this regard, the peeling force and the cleaning force of the stripper composition according to the present invention can be maintained over a long period of time.
The corrosion inhibitor according to an embodiment of the present invention may be selected from the group consisting of a benzimidazolyl compound, a triazolyl compound, and a tetrazolyl compound.
More preferably, the triazole-based compound according to an embodiment of the present invention may include a compound of the following chemical formula 5.
[ chemical formula 5]
More preferably, the benzimidazolyl compound according to an embodiment of the present invention may include a compound of the following chemical formula 6.
[ chemical formula 6]
By using the anticorrosive agent as described above, the peeling force of the stripper composition can be kept excellent while effectively inhibiting the corrosion of the lower film, and a synergistic effect with the amine compound (chemical formula 1) according to the present invention is exhibited, so that a maximized corrosion inhibiting effect can be achieved.
The corrosion inhibitor according to an embodiment of the present invention may include 0.005 to 0.6 wt%, preferably may include 0.1 to 0.5 wt%, and more preferably may include 0.2 to 0.4 wt% with respect to the total weight of the composition.
In the case where the anticorrosive agent satisfies the above numerical value range, a maximized corrosion inhibition effect can be exhibited, and also, the removal can be perfectly performed only by the cleaning process with ultrapure water so as not to be adsorbed and remain on the substrate after the cleaning.
In this regard, the stripper composition for removing photoresist according to the present invention can further improve the stripping force, the cleaning force and the corrosion prevention force by mixing the amine compound, the aprotic polar organic solvent, the glycol-based compound and the corrosion prevention agent as described above in a specific ratio. Specifically, the photoresist can be perfectly removed in a short time even at a low temperature, and the dissolving power for the stripped photoresist is also excellent, so that a photoresist residue does not remain on the substrate after cleaning. Meanwhile, since the insulating film, the metal film, and the like, which are lower films, have excellent corrosion resistance, it is possible to selectively and rapidly strip the photoresist without leaving stains and damages on the lower films. Further, the stripping force of the stripper composition according to the present invention can be maintained for a long time as time passes, and since the dissolving force for the stripped photoresist is excellent, defects such as filter clogging in the process can be minimized. Further, the stripper composition according to the present invention can be perfectly removed only by a cleaning process by ultrapure water, and thus does not adsorb and remain on the substrate after cleaning.
In this regard, the economy and efficiency of the process can be improved, and a highly reliable FPD (LCD, OLED) device can be provided by a very economical method.
Further, the present invention provides a method for stripping a photoresist using the above stripper composition for removing a photoresist.
The method for stripping the photoresist according to one embodiment of the invention can comprise the following steps: a step of forming a photoresist pattern on the substrate on which the lower film is formed; a step of patterning a lower film with the photoresist pattern; and a step of stripping the photoresist using the stripper composition for removing the photoresist.
Specifically, the method for stripping photoresist may include a stripping (stripping) step of subjecting a substrate including an underlying film of an insulating film, a metal film, or a combination thereof to an etching process using a photoresist pattern formed on the substrate as a mask, and stripping photoresist by the stripper composition for removing photoresist.
The insulating film according to an embodiment of the present invention may be any insulating film that is commonly used, and as a non-limiting example thereof, a silicon oxide film, a silicon nitride film, or the like may be mentioned.
The metal film according to an embodiment of the present invention may be any one that is commonly used, and as a non-limiting example thereof, a metal film or an alloy film containing a metal selected from aluminum (Al), copper (Cu), molybdenum (Mo), and the like may be mentioned.
In the method of stripping a photoresist according to an embodiment of the present invention, a photoresist pattern may be first formed through a photolithography process on a substrate on which an underlying film to be patterned is formed. Subsequently, after patterning the lower film using such a photoresist pattern as a mask, the photoresist may be stripped using the stripper composition or the like for removing the photoresist. Among the above-described processes, the formation of the photoresist pattern and the patterning process of the lower film may follow a conventional semiconductor device manufacturing method, and thus additional description thereof will be omitted.
In addition, in the case of stripping a photoresist using the stripper composition for removing the photoresist, the stripper composition may be first processed on a substrate where a photoresist pattern remains, and a process of cleaning with ultra pure water and a process of performing drying may be performed. Further, after the treatment of the stripper composition, a process of cleaning using an alkaline buffer solution may also be included.
The step of stripping the photoresist from the substrate engraved with the fine circuit pattern using the stripper composition for removing the photoresist according to an embodiment of the present invention may use a dipping manner in which a plurality of substrates to be stripped are immersed (nipping) in a large amount of the stripper composition at the same time, a single-sheet manner in which the stripper composition is sprayed onto the substrate one by one to remove the photoresist, and the like, and the manner thereof is not limited.
In the method of stripping a photoresist according to an embodiment of the present invention, in the case where the stripper composition is used in a dipping manner, the step of stripping the photoresist may be performed in the range of 25 to 70 ℃. In particular, the steps may be performed in the range of 30 to 65 ℃ or in the range of 40 to 60 ℃. That is, according to the present invention, excellent photoresist stripping force and cleaning force are achieved without damage to the lower film also in mild temperature conditions. Further, the step may be performed for 30 seconds to 10 minutes, or for 30 seconds to 5 minutes, or for 30 seconds to 1 minute under the above-described temperature conditions. That is, according to the present invention, excellent peeling performance can be achieved in a very fast time even under the mild temperature conditions as described above.
The present invention will be described in more detail below based on examples and comparative examples. However, the following examples and comparative examples are only one example for illustrating the present invention in more detail, and the present invention is not limited by the following examples and comparative examples.
[ production example ]
Production of amine Compound (WJEA)
Under a nitrogen atmosphere, after diethanolamine (20g, 0.19mol) and 200ml of methanol were put into a three-necked flask and stirred at normal temperature (25 ℃) to be melted, 7.7g (0.095 mol) of a formaldehyde solution (in H) was slowly dropped over 30 minutes 2 37wt% in O). After completion of dropping, the mixed solution was further stirred under a nitrogen atmosphere reflux condition at a temperature of 50 ℃ for 4 hours. After completion of the reaction, after washing with distilled water and ethyl acetate, with MgSO 4 The organic layer was dried and the solvent was removed by distillation under reduced pressure. Subsequently, silica gel column chromatography hexane/ethyl acetate =3:1 (vol: vol) conditions to obtain 52% amine compound (WJEA) and by 1 H-NMR confirmed the production of WJEA.
HRMS (EI): m/z calculated for C9H22N2O4 222.16
Production of amine Compound (MNA)
In the production example of the amine compound (WJEA), 37% of the amine compound (MNA) was obtained in the same manner except that 2-aminoethanol was used instead of 2-aminoethanol, and was obtained by 1 H-NMR confirmed the production of MNA.
HRMS (EI): m/z calculated for C5H14N2O2 134.11
Production of amine Compound (WJEA 300)
In the production example of the amine compound (WJEA), 37% of the amine compound (MNA) was obtained by the same method except that 2,2- (aminoethoxy) ethanol was used in place of diethanolamine, and by 1 H-NMR confirmed the production of WJEA 300.
HRMS (EI): m/z calculated for C9H22N2O4 222.16
Examples 1 to 12 and comparative examples 1 and 2
After mixing the component ratios described in the following table 1, stirring was performed at a speed of 500rpm at normal temperature (25 ℃) for 30 minutes to produce a stripper composition for removing a photoresist.
[ Table 1]
Photoresist stripping force parity
The stripper compositions produced in the examples and comparative examples were rated for photoresist stripping performance. After a photoresist is coated on a silicon wafer on which a Cu/Ti dual film is deposited by using a spin coater, the wafer is hard-baked at 110 deg.C, 120 deg.C, 130 deg.C, 140 deg.C, 150 deg.C for 100 to 150 seconds, respectively, to form a photoresist film having a thickness of about 1.2 to 2.1 um. Then, the wafer formed with the photoresist was cut in a size of 10mm x150mm x150mm to manufacture a sample. The samples were immersed in the corresponding stripper composition at 50 ℃ for 1 minute to remove the photoresist. The evaluation sample from which the photoresist was removed was washed with ultrapure water and then dried with nitrogen gas.
Subsequently, whether the photoresist was removed or not was confirmed for the dried sample by EDS (surface qualitative analysis) of FE-SEM, and the results of the levelness based on the following levelness are described in table 2 below.
Very good: the photoresist is removed 100% without residue
O: the photoresist is removed more than 80% and less than 100% with almost no residue
And (delta): the photoresist is removed by 50% or more and less than 80% to leave a considerable amount
X: the photoresist is removed less than 50% and a little more photoresist remains
Lower film corrosion resistance is on average
For the stripper compositions produced in the examples and comparative examples, in order to perform the balance of corrosion resistance of the copper film, a test piece of a silicon wafer having a Cu/Ti double film deposited thereon cut in a size of 10mm x150mm in order at 50 ℃ was immersed for 18 hours in a corresponding stripper. The sample was washed with ultrapure water and then dried with nitrogen gas.
Subsequently, the change in the concentration of copper ions present in the stripper composition was measured by ICP-MS, the degree of damage of copper was confirmed by FE-SEM for the dried sample, and the results thereof are shown in table 2 below and fig. 2.
Average peel force over time
For the stripper compositions manufactured in the examples and comparative examples, the stripping performance according to the photoresist concentration was averaged out. The photoresist was subjected to a heat treatment at 150 ℃ for 24 hours to remove all the solvent, thereby preparing a photoresist solid powder. The coated photoresist was immersed in a stripper composition dissolving the photoresist solid powder from 1 to 5 wt% at 50 ℃ for 1 minute to manufacture a photoresist. The evaluation sample from which the photoresist was removed was washed with ultrapure water and then dried with nitrogen gas.
Subsequently, whether the photoresist was removed or not was confirmed for the dried sample by FE-SEM, and the results of the levelness based on the following levelness are described in table 2 below.
Very good: the photoresist is removed 100% without residue
O: the photoresist is removed more than 80% and less than 100% with almost no residue
And (delta): the photoresist is removed by more than 50% and less than 80% with a considerable amount X: the photoresist is removed less than 50% and a little more photoresist remains
[ Table 2]
As shown in said table 2, it was observed that the stripper composition for removing photoresist according to the present invention is excellent in the stripping force for photoresist and remarkable in the corrosion prevention force for the lower film containing copper. Further, the stripper composition according to the present invention can be perfectly removed only in a cleaning process by ultra pure water, and thus residue does not remain on the substrate after cleaning.
Specifically, the photoresist peeling force leveling results of examples 1 to 12 show that the photoresist was removed 100% in a very fast time and the residue was perfectly cleaned without remaining on the substrate. Further, as shown in fig. 1, in the case of removing the photoresist with the stripper composition of example 1 of the present invention, it was confirmed that no undercut occurred and the inclination of the two metal layers was also appropriate, so that an excellent taper shape could be obtained.
Further, the anticorrosive ability of the lower films of examples 1 to 12 was on average the result that there was almost no dissolved copper ion in the stripper composition, and as shown in fig. 2, no damage to the copper film was observed in the SEM measurement result. It was also confirmed that the photoresist solid powder can maintain an excellent stripping force against the photoresist even when dissolved to 3 wt%.
That is, it is known that the stripper composition for removing photoresist according to the present invention is excellent in stripping force, cleaning force, corrosion resistance, and stripping force with the lapse of time.
In contrast, in the case of comparative examples 1 and 2, which are the stripper compositions not containing the amine compound (WJEA or MNA) according to the present invention, the stripping force for the photoresist was low, and the lower film corrosion prevention power was equivalent, and as a result, a considerable amount of copper ions was observed in the stripper composition, and a significant difference was also observed in the corrosion prevention power for the lower film.
Claims (13)
1. A stripper composition for removing a photoresist, comprising an amine compound represented by the following chemical formula 1,
[ chemical formula 1]
In the chemical formula 1, the first and second organic solvents,
R 1 and R 2 Each independently is hydrogen, (C1-C10) alkyl or hydroxy (C1-C10) alkyl,
L 1 and L 2 Each independently is (C1-C12) alkylene, and L 1 And L 2 Of alkylene of (a) — CH 2 -may be substituted with-O-.
2. The stripper composition for removing photoresist according to claim 1, the amine compound represented by the chemical formula 1 is represented by the following chemical formula 2, chemical formula 3, or chemical formula 4,
[ chemical formula 2]
[ chemical formula 3]
[ chemical formula 4]
In the chemical formulae 2 to 4,
a. b, c, d, e and f are each independently an integer of 1 or 2.
3. The stripper composition for removing photoresist according to claim 1, comprising the amine compound of chemical formula 1, an aprotic polar organic solvent, and a glycol-based compound.
4. The stripper composition for removing photoresist according to claim 3, wherein the aprotic polar organic solvent comprises one or more selected from the group consisting of N, N-dimethylpropionamide, N-methylformamide, dimethyl sulfoxide, dimethylacetamide, diethyl sulfoxide, dipropyl sulfoxide, sulfolane, N-methylpyrrolidone, pyrrolidone, N-ethylpyrrolidone, dipropylene glycol monoethyl ether and N, N' -dialkylformamide.
5. The stripper composition for removing photoresist according to claim 3, wherein the glycol based compound is alkylene glycol monoalkyl ether.
6. The stripping composition for removing photoresist according to claim 5, wherein the alkylene glycol monoalkyl ether contains one or more selected from the group consisting of ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monopropyl ether, dipropylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monopropyl ether, triethylene glycol monobutyl ether, tripropylene glycol monomethyl ether, tripropylene glycol monoethyl ether, tripropylene glycol monopropyl ether, and tripropylene glycol monobutyl ether.
7. The stripper composition for removing photoresist of claim 3, further comprising an anticorrosive agent.
8. The stripper composition for removing photoresist according to claim 7, wherein the corrosion inhibitor comprises one or more selected from the group consisting of a benzimidazolyl compound, a triazolyl compound and a tetrazolyl compound.
9. The stripper composition for removing photoresist according to claim 8, wherein the triazole-based compound comprises a compound of the following chemical formula 5,
[ chemical formula 5]
10. The stripper composition for removing photoresist according to claim 8, wherein the benzimidazolyl compound comprises a compound of the following chemical formula 6,
[ chemical formula 6]
11. The stripper composition for removing photoresist according to claim 7, comprising 30 to 60 wt% of the aprotic polar organic solvent, 20 to 60 wt% of the glycol-based compound, 0.1 to 10 wt% of the compound of chemical formula 1, and 0.005 to 0.6 wt% of the corrosion inhibitor, with respect to the total weight of the whole stripper composition for removing photoresist.
12. A photoresist stripping method comprising:
forming a photoresist pattern on the substrate on which the lower film is formed;
patterning a lower film with the photoresist pattern; and
the photoresist is stripped using the stripper composition for removing photoresist according to any one of claims 1 to 11.
13. The photoresist stripping method according to claim 12, wherein the lower film comprises an insulating film of a metal film containing aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), or gold alloy thereof, a silicon oxide film, or a silicon nitride film, or a combination thereof.
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| KR1020220047382A KR102493785B1 (en) | 2021-04-22 | 2022-04-18 | Stripper composition for removing photoresist and stripping method of photoresist using the same |
| KR10-2022-0047382 | 2022-04-18 |
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