KR20170107351A - Resist stripper composition and method of stripping resist using the same - Google Patents

Abstract

According to the present invention, a resist stripper composition comprises: a compound displayed in a chemical formula 1; a non-quantized organic compound; a primary alcohols compound; and an organic alkali compound. An R is a hydrocarbon radical with a carbon number of 4-12 in the chemical formula 1.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resist stripping liquid composition and a resist stripping method using the resist stripping liquid composition.

The present invention relates to a resist stripper composition used for resist stripping and a stripping method of resist using the same.

2. Description of the Related Art Recently, with the miniaturization of electronic devices, the integration and multilayering of semiconductor devices have progressed rapidly, and as a result, a photoresist (PR) pattern has been miniaturized, and a technique for stably forming micro- It became necessary.

A microcircuit of a semiconductor element or a liquid crystal display element is implemented through a photolithography process. In the photolithography step, a photoresist is uniformly applied to a conductive metal film such as aluminum, aluminum alloy, copper, copper alloy, molybdenum, or molybdenum alloy formed on the substrate, or an insulating film such as a silicon oxide film or a silicon nitride film, , And a development process is performed to form a photoresist pattern. Then, the conductive metal film and the insulation film are wet or dry etched using the patterned photoresist film as a mask to transfer the fine circuit pattern to the lower layer of the photoresist, Is removed with a stripper (stripper).

As a photoresist peeling method, a wet peeling method using a peeling liquid is employed. In this case, the peeling liquid used should basically be able to completely remove the photoresist to be removed and leave no residue on the substrate after rinsing do. In addition, it should have low corrosion resistance so as not to damage the metal film or insulating film in the lower layer of the photoresist. In addition, if mutual reaction occurs between the compositions constituting the peeling liquid, storage stability of the peeling solution becomes problematic and other properties may be exhibited depending on the order of mixing in the preparation of the peeling solution, so that there is a need for non-reactivity and high temperature stability among the compositions. In addition, it is preferable that the peeling liquid is easy to handle, less toxic, safe, and recyclable. In addition, the number of substrates that can be treated with an amount of a certain stripping liquid must be large, and the components constituting the stripping solution should be easily supplied and received.

The most important of the various conditions described above should have good removal performance for the target photoresist and low corrosion that must not damage the metal film or insulating film in the photoresist underlying layer. Photoresist stripper compositions having various compositions have been researched and developed to meet these requirements.

Korean Patent Publication No. 2013-0008106 (Feb. Korean Patent Publication No. 2014-0132271 (Nov. 17, 2014) Korea Patent Publication 2006-0117667 (Nov. 17, 2006) Korean Patent Publication No. 2006-0045957 (2006.05.17.)

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a resist stripper composition exhibiting a strong corrosion inhibiting effect even in a composition such as a strong alkali or strong base, and a resist stripping method using the same.

It is another object of the present invention to provide a method of manufacturing a flat panel display substrate including a step of cleaning a flat panel display substrate using the resist stripping liquid composition and a flat panel display substrate manufactured using the method.

The present invention relates to a compound represented by the following general formula (1): Non-magnetic organic compounds; Primary alcohol compounds; And an organic alkaline compound.

[Chemical Formula 1]

In Formula (1), R is a hydrocarbon group having 4 to 12 carbon atoms.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, including: forming a resist pattern on a substrate on which a metal layer is formed; Patterning the metal layer with the resist pattern; And a step of peeling the resist using the above resist stripping liquid composition.

The present invention also relates to a method of manufacturing a flat panel display substrate including a step of cleaning the flat panel display substrate using the above resist stripping liquid composition.

The present invention also relates to a flat panel display substrate manufactured by the above-described method of manufacturing a flat panel display substrate.

The resist stripping liquid composition according to the present invention has an advantage that the corrosion inhibiting force is strong by including the compound represented by the formula (1) even when the composition has a nucleophilic property or a strong base. In addition, there is an advantage that the performance is maintained even at a high temperature over time.

In addition, the resist stripper composition according to the present invention has an advantage of preventing stains from occurring in the process.

The resist stripping method using the resist stripper composition according to the present invention has an advantage in that it is possible to impart a strong corrosion prevention effect even when the compound represented by the general formula (1) is contained in a small amount, .

Hereinafter, the present invention will be described in more detail.

When a member is referred to as being " on "another member in the present invention, this includes not only when a member is in contact with another member but also when another member exists between the two members.

Whenever a part is referred to as "including " an element in the present invention, it is to be understood that it may include other elements as well, without departing from the other elements unless specifically stated otherwise.

< Resist  Release liquid composition>

An embodiment of the present invention is a compound represented by the following formula (1): Non-magnetic organic compounds; Primary alcohol compounds; And an organic alkaline compound.

[Chemical Formula 1]

In Formula (1), R is a hydrocarbon group having 4 to 12 carbon atoms.

The compound represented by the formula (1)

The resist stripping composition of the present invention comprises a compound represented by the following formula (1).

[Chemical Formula 1]

In Formula (1), R is a hydrocarbon group having 4 to 12 carbon atoms.

When the compound represented by Chemical Formula 1 is included in the resist stripping solution composition, it can prevent corrosion of the metal surface.

In the above formula (1), when R is a hydrocarbon group having 4 to 12 carbon atoms, it is preferable from the viewpoint of a damping force. In the case where R is hydrogen or a hydrocarbon group having 1 to 3 carbon atoms, the prevention of corrosion of the underlying metal in a strong amine or alkali solution may be somewhat difficult. When R is a hydrocarbon group having more than 12 carbon atoms in Formula 1, the compound of Chemical Formula 1 may be mixed with other constituents included in the resist stripper composition, such as an amphoteric organic compound, a primary alcohol compound, or an organic alkali compound It is preferable that R is a hydrocarbon group having 4 to 12 carbon atoms.

The hydrocarbon group may be specifically an aliphatic hydrocarbon group.

More specifically, R may be a linear or branched alkyl group having 4 to 12 carbon atoms, preferably a linear alkyl group having 4 to 12 carbon atoms.

In addition, the benzotriazole-based compound represented by Formula 1 of the present invention is advantageous in that R is connected to the benzene ring instead of the triazole ring, and therefore it is possible to impart more excellent anticorrosive force.

Furthermore, when the compound represented by Formula 1 is included in the resist stripper composition, it is possible to impart an excellent corrosion inhibiting effect in a very small amount. Therefore, the resist stripper composition can contain a strong amine or alkali, Thereby, there is an advantage that the peeling force can also be increased. As described above, since the compound represented by the above formula (1) can be imparted with a strong anticorrosive force even when a small amount is added, it can have a great advantage in terms of overall cost reduction.

Further, even when the compound represented by Formula 1 is included in the resist stripper composition, no color change of the stripper composition occurs.

In one embodiment of the present invention, the compound represented by Formula 1 is selected from the group consisting of 5-butyl-1H-benzotriazole, 5-hexyl-1H-benzotriazole, Octylbenzotriazole, and 5-dodecyl-1H-benzotriazole. However, the present invention is not limited thereto.

In another embodiment of the present invention, the compound represented by Formula 1 may be contained in an amount of 0.001 to 5% by weight, preferably 0.005 to 3% by weight based on 100% by weight of the total resist stripper composition.

When the compound represented by the formula (1) is contained in the above range in the range of 100% by weight of the total resist stripping solution composition, it is preferable from the viewpoint of economy or corrosion prevention. If the amount of the compound represented by the formula (1) is less than 0.001% by weight, corrosion of the metal layer may occur and damage to the device may occur. If the compound is more than 5% by weight, As the overall viscosity of the resist stripper solution increases somewhat, unevenness may slightly occur due to the stripper solution remaining or remaining on the substrate. Therefore, it is preferable that the above range is satisfied.

Magnetostrictive  Organic compound

The resist stripping composition of the present invention includes an aprotic organic compound.

The non-magnetic organic compound may dissolve or disperse the components contained in the resist stripper composition, thereby allowing the resist removal reaction to proceed more smoothly. In addition, when the resist stripping liquid composition contains the non-magnetic organic compound, it is advantageous in exhibiting the removal performance of the resist polymer modified or crosslinked by etching or the like, and at the same time, the number of treated wafers is advantageously increased.

The non-magnetic organic compound may specifically be a non-magnetic polar compound, and it is preferable that the non-magnetic polar compound is not too high or low in boiling point for proper peeling force. Specifically, the non-magnetic organic compound preferably has a boiling point of 130 ° C to 250 ° C.

The non-magnetic organic compounds include, but are not limited to, pyrrolidone compounds such as 1-acetylpyrrolidine, 2-pyrrolidone, N-methylpyrrolidone, and N-ethylpyrrolidone; Imidazolidinone compounds such as 1,3-dimethyl-2-imidazolidinone and 1,3-dipropyl-2-imidazolidinone; Sulfoxide compounds such as dimethyl sulfoxide and sulfolane; Phosphate compounds such as triethyl phosphate, tributyl phosphate and the like; N, N-dimethylformamide, N, N-diethylformamide, N, N-dimethylacetoacetamide, N, N-tertbutylformamide, acetamide, N, N-dimethylacetamide, N, N-dimethylacetamide, N, N-diethylacetamide, N- (2-hydroxyethyl) N, N-dimethylpropionamide, N, N-dimethylpropionamide, 3- (2-ethylhexyloxy) -N, N- dimethylpropionamide, 3-butoxy- Amide compounds such as amide; These may be used singly or in combination of two or more.

In still another embodiment of the present invention, the non-magnetic organic compound is contained in an amount of 40 to 95% by weight, preferably 50 to 95% by weight, more preferably 60 to 80% by weight, %. &Lt; / RTI &gt;

When the non-magnetic organic compound is contained in the range of 100% by weight of the total resist stripping solution composition, there is an advantage in that the removal performance of the resist polymer degraded or crosslinked by etching or the like is excellent. When the amount of the non-magnetic organic compound is less than 40% by weight, the removability of the crosslinked resist and the overall process capacity may be somewhat deteriorated. When the amount of the non-magnetic organic compound exceeds 95% by weight, Since the content of other components contained in the resist stripper composition is reduced, the performance of the resist stripper composition may be adversely affected, resulting in an increase in the price of the product, so that the overall benefits can not be obtained.

Primary alcohol compounds

The resist stripping composition of the present invention comprises a primary alcohol compound.

The primary alcohol compound dissolves the solidified resist polymer and facilitates the removal of the peeling solution by water in the deionized water rinsing process after the peeling of the resist so that the adsorption of the resist dissolved in the peeling solution It is possible to minimize the re-precipitation.

The primary alcohol compound is, for example, tetrahydroperfuryl alcohol, hydroxymethylcyclopentene, 4-hydroxymethyl-1,3-dioxolane, 2-methyl-4-hydroxymethyl-1,3-dioxolane 1,3-dioxolane-4-methanol, 1,3-propanediol, 1,3-butanediol, 1,4-butanediol, 2-methoxyethanol, polyethylene glycol, diethylene glycol, Diethylene glycol monomethyl ether, triethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monomethyl ether, diethylene glycol monomethyl ether, Butyl ether, ethylene glycol monoisopropyl ether, diethylene glycol monobutyl ether, polyethylene glycol monomethyl ether, polyethylene glycol monobutyl ether, propylene glycol monomethyl Ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, and propylene glycol monomethyl ether acetate. These solvents may be used singly or in combination of two or more kinds, but are not limited thereto.

In another embodiment of the present invention, the primary alcohol compound is contained in an amount of 3 to 55% by weight, preferably 5 to 50% by weight, based on 100% by weight of the total resist stripper composition.

When the primary alcohol compound is contained within the above range, there is an advantage in that it is easy to remove the peeling liquid by water in the pure water rinsing process. When the primary alcohol compound is contained in an amount of less than 3% by weight, when the resolved resist polymer is remained on the metal layer, the solubility of the decomposed resist polymer is lowered, and there may be some unevenness. When the primary alcohol mixture exceeds the above range The peeling liquid may remain on the substrate due to the high viscosity, and the occurrence of stains may become somewhat severe. Further, since the content of relatively different components is reduced, the peeling ability, removing power and solubility of the crosslinked photoresist may be somewhat lowered, and there may occur a problem that the number of substrates that can be treated with an amount of a certain amount of peeling liquid may be lowered have.

Organic alkaline compound

The resist stripping solution composition of the present invention comprises an organic alkali compound. The organic alkali compound strongly penetrates into the polymer matrix of the modified or cross-linked resist under various processes such as dry or wet etching, ashing, or ion implant processing, thereby forming a bond intramolecularly or intermolecularly And forming a vacant space in a structurally weak portion in the resist remaining on the substrate, thereby deforming the resist into amorphous polymer gel state, thereby allowing the resist attached on the substrate to be easily removed. .

When the organic alkaline compound is included in the resist stripping liquid composition, the photoresist removing ability and the corrosion resistance of the metal under the substrate are strengthened, and when the organic alkaline compound shows excellent performance in removing, the corrosion resistance of the lower metal is also increased. There is a problem in that the deterioration of the corrosion ability is deteriorated in order to minimize the damage of the metal, and thus the deterioration of the peeling speed and the half-interaction which lowers the dissolving power are caused.

Therefore, since the resist stripper composition of the present invention contains the compound represented by the above formula (1), even when the organic alkaline compound has a strong removing ability, the resist stripper composition has strong anticorrosive effect, Of course, even when a small amount is included, a strong corrosion prevention effect can be imparted, so that there is an advantage that an inexpensive cost effect can be exhibited.

The organic alkali compound may be, but not limited to, an organic alkali compound mainly used in a stripper for a thin film transistor (TFT), for example, tetramethylammonium hydroxide, tetraethylammonium hydroxide and amines. And the amines include primary amines such as methylamine, ethylamine, monoisopropylamine, n-butylamine, sec-butylamine, isobutylamine, t-butylamine and pentylamine; Examples of the secondary amine such as dimethylamine, diethylamine, dipropylamine, diisopropylamine, dibutylamine, diisobutylamine, methylethylamine, methylpropylamine, methylisopropylamine, methylbutylamine and methylisobutylamine Amine; Tertiary amines such as diethylhydroxyamine, trimethylamine, triethylamine, tripropylamine, tributylamine, tripentylamine, dimethylethylamine, methyldiethylamine and methyldipropylamine; But are not limited to, choline, monoethanolamine, diethanolamine, triethanolamine, monopropanolamine, monomethylethanolamine, 2-aminoethanol, 2- (ethylamino) ethanol, 2- Amino-2-propanol, 2-amino-1-propanol, 3-amino-2-aminoethylaminoethanol, Alkanolamines such as 1-propanol, 4-amino-1-butanol, dibutanolamine and aminoethylethanolamine; (Methoxymethyl) dimethylamine, (methoxymethyl) dimethylamine, (butoxymethyl) dimethylamine, (isobutoxymethyl) dimethylamine, (methoxymethyl) diethanolamine (Methoxymethyl) aminoethanol, methyl (butoxymethyl) aminoethanol, 2- (2-aminoethoxy) ethanol and the like And the like.

In some embodiments of the present invention, the organic alkaline compound is contained in an amount of 0.1 to 20% by weight, preferably 0.5 to 10% by weight based on 100% by weight of the total resist stripper composition.

When the content of the organic alkali compound is within the above range, it is preferable from the viewpoint of peeling force or anticorrosive force. If the amount of the organic alkaline compound is less than 0.1% by weight, a problem that a resist foreign material may remain somewhat due to a decrease in resist peeling force may occur. If the organic alkaline compound exceeds 20% by weight, This is somewhat difficult and can cause problems.

additive

In still another embodiment of the present invention, the resist stripper composition may further comprise at least one additive selected from the group consisting of a corrosion inhibitor and deionized water.

(1) Corrosion inhibitors

The corrosion inhibitor can be further used particularly when the degree of denaturation of the photoresist to be removed is too high to be in contact with the peeling liquid for a long time or repeatedly, or when the processing conditions are severe.

Examples of the corrosion inhibitor include, but are not limited to, benzotriazole, tolythriazole, methyltolytriazole, 2,2 '- [[[benzotriazole] methyl] imino] bisethanol, 2,2' - [[methyl-1-hydrogen-benzotriazol-1-yl] methyl] imino] bist methanol, 2,2 ' ] - [[[methyl-1-hydrogen-benzotriazol-1-yl] methyl] imino] bisethanol, 2,2 ' Yl] methyl] imino] bismethylamine, 2,2 '- [[[methyl-1-hydrogen-benzotriazol- Methyl-1-hydrogen-benzotriazole, 5-methyl-1-hydrogen-benzotriazole, 4-methyl-4,5 , 6,7-tetrahydro-1H-benzo [1,2,3] triazole, 5-methyl-4,5,6,7-tetrahydro-1H- benzo [1,2,3] triazole, 4 , 6-dimethyl-4,5,6,7-tetrahydro-1H-benzo [1,2,3] triazole 5,6-Dimethyl- Tetrahydro-1H-benzo [1,2,3] triazole with an azole compound such as 2-methylphenol, 2,6-dimethylphenol, 2,4,6-trimethylphenol, 2-propylphenol, 2,6-tripropyl-4-methylphenol, 2-t-butylphenol, 2-t-butylphenol, Butylphenol, 2,4,6-tri-t-butylphenol, 2,6-di-t-butyl-4-methylphenol, 2,4-dimethyl- , t-butyl-4-methoxyphenol and the like, monocarboxylic acids such as formic acid, acetic acid and propionic acid, acids such as malic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, , Dicarboxylic acids such as glutaconic acid, tricarboxylic acids such as trimellitic acid and tricarvaleric acid, and organic acids such as hydroxyacetic acid, lactic acid, salicylic acid, malic acid, tartaric acid, citric acid, gluconic acid and oxycarboxylic acid Ryu; Maleic amide esters, maleic amide esters, maleic amide esters, fumaric amide esters, oxalic amide esters, malonic amide esters, glutaric amide esters, acetic amide esters, lactic amide esters, And organic acid amide esters such as tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters and tartaric acid esters.

The corrosion inhibitor may be contained in an amount of 0.001 to 3% by weight, preferably 0.005 to 0.5% by weight based on 100% by weight of the total resist stripper composition. If the corrosion inhibitor is included within the above range, the economical efficiency is excellent. Since the corrosion inhibitor can be used in a smaller amount than conventionally used, various problems caused by the use of the corrosion inhibitor can be solved.

(2) deionized water

The deionized water may be further included in the resist stripper composition. When the deionized water is further contained, it is possible to improve the activation of the alkaline compound to increase the peeling speed, and it is easy to mix with the primary alcohol compound and the aprotic polar solvent. Thus, in the rinsing step with deionized water after the peeling step, There is an advantage that the resist stripper solution composition can be completely removed in a short time without remaining.

In still another embodiment of the present invention, the deionized water may be contained in an amount of 0.01 to 30% by weight, preferably 0.1 to 10% by weight based on 100% by weight of the resist stripper composition, but is not limited thereto. However, when the deionized water is contained within the above range, it is preferable in terms of the peeling speed.

The production of the photoresist stripper composition described above is not particularly limited in the present invention. For example, the above-mentioned components and contents can be sufficiently mixed in an agitator or a circulating apparatus.

The photoresist stripper liquid composition may be used in a selective stripping process of a photoresist film to form a fine pattern in semiconductor device production.

Since the photoresist stripper composition of the present invention contains the compound represented by the general formula (1), the non-magnetic organic compound, the primary alcohol compound and the organic alkali compound, the composition has a high nucleophilicity, It is possible to impart a strong anticorrosive force to the metal used for the film, and the performance is maintained even after a lapse of a high temperature.

Particularly, when the compound represented by the formula (1) is used together with the primary or secondary amine, a strong peeling force against the resist is obtained, and even when the compound represented by the formula (1) is contained in a small amount, Therefore, there is an advantage that an inexpensive cost effect can be exhibited.

In addition, the photoresist stripper composition of the present invention can be used not only for semiconductor devices, but also for a manufacturing process of a display device, a MEMS device, a wiring board, etc. including the same.

< Resist  Removal method>

According to still another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a resist pattern on a substrate on which a metal layer is formed; Patterning the metal layer with the resist pattern; And a step of peeling the resist using the above resist stripping liquid composition.

Specifically, a photoresist is coated on a metal layer formed on the substrate to form a photoresist pattern, and the metal layer is etched and patterned using the photoresist having the pattern formed thereon as a mask. Thereafter, the photoresist stripper composition according to the present invention can be used to peel off the photoresist.

The photoresist includes a positive type photoresist, a negative type photoresist, and a positive type / negative type dual tone photoresist. The photoresist to which the present invention is not particularly limited is particularly effective. Examples of the photoresist include novolak type phenol resin And a photoactive compound based on diazonaphthoquinone.

The metal layer may be a conductive metal layer, for example, a single layer made of a metal such as aluminum, copper, neodymium, or molybdenum, or an alloy of these metals, or a multi-layered film of two or more layers. More preferably, it is a single film comprising aluminum, copper or an alloy thereof, or a multilayer film of two or more layers, or a single film containing aluminum, copper or an alloy thereof and neodymium, molybdenum or an alloy thereof, .

The method of peeling the photoresist from the substrate on which the fine circuit pattern is formed by using the photoresist stripper composition of the present invention includes a dip method in which a plurality of strips are simultaneously dipped in a large amount of the stripper composition to be stripped, And a photoresist is removed by spraying (spraying) the stripping liquid onto the substrate. In this case, the application time and temperature of the immersion, spray (spraying) or immersion and spraying may be selected by those skilled in the art as being easy or suitable.

< flat  Panel display device>

The present invention also provides a method of manufacturing a flat panel display substrate including a step of cleaning or peeling a flat panel display substrate using the above resist stripping liquid composition.

The present invention also relates to a flat panel display substrate manufactured using the above-described method for manufacturing a flat panel display substrate.

The present invention also provides a flat panel display device including the aforementioned flat panel display substrate.

Since the flat panel display substrate manufactured by the above-described manufacturing method and the flat panel display device including the same are perfectly cleaned in the manufacturing process and the corrosion of the metal wiring including aluminum and / or copper hardly occurs, .

The photoresist stripper liquid composition according to the present invention can be applied not only to the flat panel display described above but also to various image display devices.

Hereinafter, the present invention will be described in detail by way of examples to illustrate the present invention. However, the embodiments according to the present disclosure can be modified in various other forms, and the scope of the present specification is not construed as being limited to the above-described embodiments. Embodiments of the present disclosure are provided to more fully describe the present disclosure to those of ordinary skill in the art. In the following, "%" and "part" representing the content are by weight unless otherwise specified.

Example  1 to 9 and Comparative Example  1 to 9: Resist  Preparation of release liquid composition

Resist stripper compositions were prepared according to the components and compositions shown in Table 1 below. At this time, in order to measure the corrosion strength of the compound of formula (1), strong primary amine or secondary amine was used, and in the case of tertiary amine, deionized water was added to enhance the activation.

The compound of formula (1) Non-magnetic organic compound Primary alcohol compounds Organic alkaline compound DIW Kinds ingredient
(weight%) Kinds ingredient
(weight%) Kinds ingredient
(weight%) Kinds ingredient
(weight%) ingredient
(weight%) Example 1 A1 0.18 B1 62 C1 32.82 MIPA 5 - Example 2 A2 0.16 B3 90 C2 6.84 MEA 3 - Example 3 A3 0.15 B3 61 C3 32.85 AEEA 6 - Example 4 A3
A2 0.05
0.05 B3 70 C2 22.9 MMEA 7 - Example 5 A1 0.22 B1 85 C1 6.78 DEA 8 - Example 6 A2 0.13 B2 77 C1 7.87 MDEA 10 5 Example 7 A4 0.005 B3 60 C1 37.995 AEEA 2 - Example 8 A4 0.02 B1 75 C2 14.98 MMEA 10 - Example 9 A1 4 B2 69 C3 24 MEA 3 - Comparative Example 1 - - B1 55 C2 43 MEA 2 - Comparative Example 2 A1 0.1 - - C3 91.9 AEEA 8 - Comparative Example 3 A1 0.1 B3 92.9 - - MMEA 7 - Comparative Example 4 A1 0.1 B2 70 C3 29.9 - - - Comparative Example 5 A5 0.1 B1 53 C1 43.9 MEA 3 - Comparative Example 6 A6 0.1 B3 65 C2 27.9 MIPA 7 - Comparative Example 7 A7 0.1 B1 45 C1 49.9 AEEA 5 - Comparative Example 8 A8 0.1 B1 55 C3 42.9 MEA 2 - Comparative Example 9 A9 0.1 B2 66 C2 30.9 MEA 3 - A1: 5-hexyl-1H-benzotriazole
A2: 4-n-octylbenzotriazole
A3: 5-Dodecyl-1H-benzotriazole
A4: 5-n-octylbenzotriazole
A5: benzotriazole
A6: Tolythriazole
A7: 2,2 '- [(1H-benzotriazol-1-ylmethyl) imino] bisethanol
A8: 2-octyl-2H-benzotriazole
A9: 6-Methyltetrahydrobenzotriazole
B1: N-methylpyrrolidone
B2: N-ethyl formamide
B3: N, N-diethylformamide
C1: 4-hydroxymethyl-1,3-dioxolane
C2: diethylene glycol monomethyl ether
C3: diethylene glycol monoethyl ether
MIPA: 1-amino-2-propanol
MEA: Monoethanolamine
AEEA: Aminoethylethanolamine
DEA: diethanolamine
MMEA: Monomethylethanolamine
MDEA: N-methyldiethanolamine
DIW: deionized water

Experimental Example  One : Resist  The peeling liquid composition Peel force  evaluation

In order to confirm the peeling effect of the resist stripper composition according to Examples and Comparative Examples, a photoresist was uniformly coated on a 10 × 10 cm glass with a thickness of 1.2 μm using a spin coater, and then baked at 150 ° C. for 10 minutes And cut into 2 x 2 cm to prepare a substrate.

Thereafter, the resist stripper compositions of Examples and Comparative Examples were kept constant at 60 占 폚, and then the objects were immersed at different immersion times to evaluate the peel force.

After that, pure water was cleaned for 1 minute in order to remove the peeling liquid remaining on the substrate. To clean pure water remaining on the substrate after cleaning, the sample was completely dried with nitrogen.

The denaturation of the substrate or the curing resist and dry etching residue removal performance were confirmed using a scanning electron microscope (SEM, Hitachi S-4700), and the results are shown in the following Table 2, and the removal time in the glass substrate was shown .

Experimental Example  2: After time lapse Resist  The peeling liquid composition Peel force  evaluation

The resist stripper compositions of the examples and comparative examples were left at high temperature (60 ° C) for one week, and the peeling force of the resist stripper composition was evaluated in the same manner as in Experimental example 1.

Experimental Example  3: Resist  For the metal wiring of the stripping solution composition Revolution  evaluation

In order to evaluate the corrosion resistance of the resist stripping solution composition to the metal wiring, a substrate on which Cu wiring and Mo-X wiring were exposed was prepared. Thereafter, the resist stripper composition according to the examples and the comparative example was kept constant at a temperature of 60 캜, and the substrate on which the Cu wiring and the Mo-X wiring were exposed was immersed in the resist stripper composition for 30 minutes, And dried, and evaluated using a scanning electron microscope (SEM, Hitachi S-4700). The results are shown in Table 2 below.

EXPERIMENTAL EXAMPLE 4 Evaluation of Mechanism of Resistance to Metal Wiring of Resist Remover Composition after Time Lapse

After leaving the resist stripping composition according to Examples and Comparative Examples at high temperature (60 DEG C) for one week, the damping force was evaluated in the same manner as in Experimental Example 3. The results are shown in Table 2 below.

Experimental Example  5: Evaluation of occurrence of stain

A substrate having a Cu layer formed on a Mo-X layer using a thin film sputtering method on a glass substrate was prepared according to a conventional method in order to confirm the effect of preventing the formation of stain on the resist stripping solution composition. The resist required for the experiment was prepared by baking the photoresist (Dongwha Fine Chem, DWP-520) at a high temperature of 115 ° C for 3 days to remove all of the solvent and solidify it.

0.5% by weight of the solidified photoresist prepared in the photoresist stripping liquid compositions of the examples and the comparative examples was added, and the resultant was sufficiently dissolved at room temperature, and the temperature was kept constant at 50 캜. Subsequently, the substrate on which the Cu layer was formed on the Mo-X layer was immersed for 2 minutes, removed, and the strippers and resist remaining on the substrate were removed to some extent using nitrogen at a constant pressure, and then placed on a flat surface. Five drops were dropped at different positions and left for 1 minute.

Thereafter, the substrate was rinsed with deionized water for 1 minute, and then the deionized water remaining on the substrate was completely removed using nitrogen. This is to judge the degree of occurrence of staining in an actual TFT process. The entire surface was inspected and evaluated using a halogen lamp, a digital camera and an electron microscope to determine the degree of staining of the substrate.

At this time, evaluation criteria for generation of stains and stains are as follows.

&Amp; cir &amp;: Very good (No corrosion or staining on the surface of Cu wiring and Mo-X wiring and crevice)

Good: Good (Cu wiring and Mo-X wiring surface and / or crevice corrosion or stain rarely occur)

DELTA: Normal (partial corrosion of the surface of Cu wiring and / or Mo-X wiring and slight corrosion, surface roughness change, or stain somewhat)

X: defective (generation of a surface of Cu wiring and Mo-X wiring and / or crevice etching or a lot of stains occur)

division Peel force Peel force after 1 week high temperature aging Metal damping force Metal durability after 1 week high temperature aging Stain occurrence Example 1 <10 sec <10 sec ◎ ◎ ◎ Example 2 <10 sec <10 sec ◎ ◎ ◎ Example 3 <10 sec <10 sec ◎ ◎ ◎ Example 4 20 sec 20 sec ◎ ◎ ◎ Example 5 20 sec 20 sec ◎ ◎ ◎ Example 6 30sec 30sec ◎ ◎ ◎ Example 7 20 sec 20 sec ◎ ◎ ◎ Example 8 <10 sec <10 sec ◎ ◎ ◎ Example 9 <10 sec <10 sec ◎ ◎ ◎ Comparative Example 1 <10 sec <10 sec × × × Comparative Example 2 3min 3min ◎ ◎ × Comparative Example 3 20 sec 20 sec ◎ ◎ × Comparative Example 4 > 10 min > 10 min ◎ ◎ × Comparative Example 5 <10 sec <10 sec × × △ Comparative Example 6 <10 sec <10 sec △ △ △ Comparative Example 7 <10 sec <10 sec △ △ △ Comparative Example 8 <10 sec <10 sec × × × Comparative Example 9 <10 sec <10 sec × × ×

As can be seen from Table 2, the resist stripping composition according to the present invention is excellent in peeling force and anticorrosion property against Cu wiring and Mo-X wiring as well as peeling force and etching power against Cu wiring, It can be seen that the performance is maintained even after the high temperature aging of the week. In addition, it was confirmed that no residue or contamination problem occurred after the peeling process.

On the other hand, the resist stripper composition according to the comparative example was not excellent in the peeling force or the anticorrosive force against the Cu wiring and / or the Mo-X wiring, and remained after the stripping process.

Claims (12)

A compound represented by Formula 1 below;
Aprotic organic compounds;
Primary alcohol compounds; And
Resist stripper composition comprising an organic alkaline compound:
[Chemical Formula 1]

In Formula (1), R is a hydrocarbon group having 4 to 12 carbon atoms. The method according to claim 1,
The compound represented by the above formula (1) is a compound represented by the following formula (1): 5-butyl-1H-benzotriazole, 5-hexyl- -1H-benzotriazole, wherein the resist stripping liquid composition is at least one selected from the group consisting of: The method according to claim 1,
Wherein the compound represented by Formula 1 is contained in an amount of 0.001 to 5% by weight based on 100% by weight of the total resist stripper composition. The method according to claim 1,
Wherein the non-magnetic organic compound is contained in an amount of 40 to 95% by weight based on 100% by weight of the total resist stripper composition. The method according to claim 1,
Wherein the primary alcohol compound is contained in an amount of 3 to 55% by weight based on 100% by weight of the total resist stripper composition. The method according to claim 1,
Wherein the organic alkaline compound is contained in an amount of 0.1 to 20% by weight based on 100% by weight of the total resist stripper composition. The method according to claim 1,
An antioxidant, a corrosion inhibitor, and deionized water. 8. The method of claim 7,
Wherein the deionized water is contained in an amount of 0.01 to 30% by weight based on 100% by weight of the total resist stripper composition. Forming a resist pattern on a substrate on which a metal layer is formed;
Patterning the metal layer with the resist pattern; And
A resist stripping method comprising stripping a resist using the resist stripper composition according to any one of claims 1 to 8. A method for manufacturing a flat panel display substrate, comprising the step of cleaning a flat panel display substrate using the resist stripping liquid composition according to any one of claims 1 to 8. A flat panel display substrate manufactured using the method of manufacturing a flat panel display substrate of claim 10. A flat panel display device comprising the flat panel display substrate of claim 11.