KR20050001811A - Photoresist stripper composition, and exfoliation method of a photoresist using it - Google Patents

Abstract

PURPOSE: A photoresist stripper composition and a method of peeling off photoresist using the same are provided to reduce photoresist stripping time, to restrain the corrosion of a metal film and to perform rinsing using only water. CONSTITUTION: A photoresist stripper composition contains an organic amine compound of 5 to 50 weight%, a glycol ether compound of 5 to 50 weight%, a desired compound of 0.01 to 1 weight% adequate for a predetermined chemical formula, an anti-corrosion agent of 0.1 to 10 weight% and DI(DeIonized) water.

Description

Photoresist stripper composition and photoresist stripping method using same {PHOTORESIST STRIPPER COMPOSITION, AND EXFOLIATION METHOD OF A PHOTORESIST USING IT}

The present invention relates to a photoresist stripper composition and a photoresist stripping method using the same.

More specifically, the present invention relates to a stripper composition for stripping a photoresist film remaining after wet and dry etching processes in a semiconductor device and a liquid crystal display device, and a photoresist stripping method using the same.

In the manufacture of a semiconductor device or a liquid crystal display device, a metal wiring is usually formed by forming a metal or metal oxide layer on a semiconductor substrate or a glass substrate, forming a photoresist layer, an exposure process of transferring a mask pattern to the photoresist, It proceeds in the order of the etching process of etching a film | membrane along a pattern, and the peeling process of removing a photoresist.

The accompanying drawings are views for sequentially explaining the metal pattern forming process by the exposure process, the etching process and the peeling process as described above.

FIG. 1 illustrates that a photoresist layer 30 is formed on a surface of a substrate on which a semiconductor substrate or a glass substrate 10, a metal, an inorganic material, or an oxide layer 20 is sequentially stacked.

FIG. 2 shows a latent image of the pattern by irradiating active rays having high energy, such as ultraviolet rays, electron beams, or X-rays, to a portion where the pattern on the surface of the photoresist film is to be formed through a mask having a predetermined pattern formed thereon; After developing with a developer, a photoresist pattern was formed.

After forming the pattern by wet and dry etching the pattern formation site in Figure 3, the photoresist remaining after the pattern formation as shown in Figure 4 is removed with a stripping solution.

Recently, the etching conditions of a metal or an oxide film have been severed due to the tendency of ultrafine patterning due to the high integration of semiconductor devices and liquid crystal display devices, and thus the occurrence frequency of deteriorated or cured photoresist by an etching process is increasing.

Specific etching processes are classified into wet etching using an electrochemical reaction and dry etching using a radical reaction of a plasma-etched etching gas. The deteriorated or cured photoresist generated after the etching process is difficult to remove even using a conventional photoresist stripper. If the deteriorated or cured photoresist is not completely removed, photoresist residues may cause disconnection and short circuit in subsequent processes, which may cause a decrease in yield in the production of semiconductor devices or liquid crystal display devices.

In addition, high integration of semiconductor elements and ultrafine patterns are caused, as well as wiring delays caused by resistance (wiring resistance) and wiring capacitance of metals used in semiconductor elements. In order to improve the wiring resistance, it is proposed to use a metal having a lower resistance than aluminum (Al), for example, copper (Cu), which has been mainly used as a wiring material, and is in the stage of practical use.

As a solution for peeling the patterned photoresist layer, i.e., the release agent, an inorganic acid, an inorganic base, or an organic solvent, for example, a halogenated organic solvent, an alkylbenzene sulfonic acid, a mixture of an aromatic hydrocarbon solvent and an alkylbenzene sulfonic acid, and the like can be mentioned. . However, when using an inorganic acid or an inorganic base as an active ingredient of the release agent, it is common to use an organic solvent because it is accompanied by operational difficulties, such as corrosion of the lower metal film or harmful to the human body, and recently contains a polar solvent and an amine An amine release agent to be used is used a lot.

The amine component in the amine-based releasing agent composition has been found to be essential for effectively removing the crosslinked resist film by calcination, plasma etching, implantation, or other LSI device fabrication processes. Nevertheless, amine-based photoresist strippers sometimes cause serious problems such as corrosion, especially with aluminum and copper substrates.

This corrosion is believed to be left by the residual stripper composition after the stripping step on the substrate surface or on the substrate carrier, and proceeded by ionized water due to the residual amine in the post-peel off cleaning step with water. In other words, the amine component of the release composition by itself does not corrode the substrate, but may also serve to trigger water to cause corrosion.

In addition to this corrosion problem, due to the difference in the solubility of the foreign matter in the release agent and water, the material dissolved in the residual stripper composition may be precipitated when washed immediately with water after the peeling process.

In order to solve this problem, an intermediate washing step using an organic solvent has been introduced between the peeling step and the post-peel washing step using water.

For example, isopropyl alcohol or dimethyl sulfoxide and the like are known to be useful for this purpose. Alternatively, amine based peeling compositions have been proposed in which a corrosion inhibitor is added which can alleviate the problem of corrosion by residual amines in the post-peel step.

Examples of documents suggesting the above solution are as follows.

US Patent No. 4,617,251 discloses certain amine compounds (eg, 2- (2-aminoethoxy) ethanol, 2- (2-aminoethylamino) ethanol, or mixtures thereof) and certain polar solvents (eg N-methyl 2-pyrrolidone, tetrahydropropyl alcohol, isophorone, dimethyl sulfoxide, dimethyl adipate, dimethyl glutarate, sulfolane, gamma-butyrolactone, N, N-dimethylacetamide and mixtures thereof) A disclosed photoresist stripper composition containing is disclosed, and US Patent No. 4,770,71 discloses certain amide compounds (eg, N, N-dimethylacetamide) and certain amine compounds (eg, monoethanamine). Forged photoresist stripper compositions containing the same are disclosed, and U.S. Patent No. 4,824,763 also discloses triamines (eg diethylenetriamine) and nonpolar solvents (eg N-methyl-2-pyrrolidone, dimethylform). army , Butyrolactone, etc.) is disclosed, US Patent Publication No. 5,279,791 includes hydroxylamine (eg, hydroxyamine), alkanolamine, and any polar solvent A peeling liquid composition to be disclosed is disclosed.

U.S. Patent No. 4,786,578 proposes a cleaning solution for use after photoresist stripping, wherein the cleaning solution described above is a nonionic surfactant (such as ethoxylated alkylphenol) and an organic base (such as parent-, di- or tree). Ethanolamine).

U.S. Patent No. 4,824,762 contains glycol ethers (eg diethylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether) and aliphatic amines (eg monoethanolamine or triisopropanolamine). A photoresist post-cleaning solution is disclosed, wherein the post-cleaning solution described above is non-aqueous.

U.S. Patent No. 4,904,571 discloses solvents (e.g., water, alcohols, ethers, ketones, etc.), alkaline compounds dissolved in the solvent (e.g., primary, secondary, tertiary amines, quaternary amines, cyclic amines, polyamines, Quaternary ammonium amine, sulfonium hydroxide, alkali hydroxide, etc.), and a printed circuit board containing a borohydride compound (eg, sodium borohydride, dimethyl amine boron, pyridine boron, etc.) dissolved in the solvent. A photoresist release agent is disclosed.

WO 88-05813 proposes a positive or negative photoresist stripper containing butyrolactone or caprolactone, a quaternary ammonium hydroxide compound and any nonionic surfactant.

U.S. Patent No. 5,478,443 and U.S. Patent No. 5,320,709 disclose corrosion of metals using certain organic corrosion inhibitors (glycol and dimethyl sulfoxide) and fluorine-containing compounds (ammonium fluoride, hydrofluoric acid, perfluoric acid, etc.). It is suggested to solve the problem. However, in these compositions, a large amount of organic solvent is required, and thus, a large amount of waste has to be removed.

U.S. Patent No. 5,612,304 discloses a stripping solution comprising a polar solvent under certain conditions, a specific alkanolamine, an amino acid having a hydroxyl group, and a redox agent having a specific redox potential because it is not easy to remove the residue after etching. A composition is proposed. The document describes that amino acids having hydroxyl groups are used as corrosion inhibitors, and that organic or inorganic acids degrade the peel force by lowering the basicity of the amine-containing stripper solution.

US Patent Publication No. 2002-0068244 proposes a resist stripper comprising at least one of alkylene carbonate, organic peroxide and N-substituted morphine.

Korean Laid-Open Patent Publication No. 2001-0018377 proposes a resist stripper containing an amine compound, a glycol solvent, and a perfluoroalkyl ethylene oxide.

Korean Laid-Open Patent Publication No. 2000-0016878 proposes a stripping liquid composition comprising an alkoxy N-hydroxyalkylalkanamide and a polar substance having a dipole moment of 3 or more, a damage preventing agent, and an alkanol amine.

Korean Laid-Open Patent Publication No. 2001-00440496 proposes a peeling liquid composition to be applied to a novolak resin / quinonediazide compound-based resist using a pyriminone compound.

U.S. Patent No. 5,480,585 and Japanese Patent Application Laid-open No. Hei 5-281753 describe alkanes of the formula H _3-n N ((CH ₂ ) _m OH) _n (m is 2 or 3, n is 1, 2 or 3). An organic release agent for photoresists comprising an olamine, sulfone compound or sulfoxide compound and a hydroxy compound of the formula C ₆ H _6-n (OH) _n (where n is 1, 2 or 3) is proposed.

Japanese Patent Application Laid-Open No. 4-124668 discloses 20 to 90% by weight of organic amine, 0.1 to 20% by weight of phosphate ester surfactant, 0.1 to 20% by weight of 2-butyne-1,4-diol and the balance of glycol monoalkyl ether and / Or a peeling liquid composition for photoresists comprising an aprotic polar solvent is proposed.

Here, ethylene glycol monoether ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether and the like were used for the glycol monoalkyl ether, and dimethyl sulfoxide, N, N-dimethylacetamide as an aprotic polar solvent. And 2-butyne-1,4-diol and phosphate ester surfactants prevent corrosion of metal layers such as aluminum and copper by organic amines absorbed in photoresist, so long as the peeling properties are not deteriorated. To add.

Japanese Laid-Open Patent Publication No. 64-42653 contains at least 50% by weight of dimethyl sulfoxide, particularly preferably at least 70% by weight, and includes diethylene glycol monoalkyl ether, diethylene glycol dialkyl ether, gamma-butyrolactone and 1 1 to 50% by weight of at least one solvent selected from, 3-dimethyl-2-imidazolidinone and 0.1 to 5% by weight of a nitrogen-containing organic hydroxyl compound such as monoethanolamine I'm proposing.

When the dimethyl sulfoxide is less than 50% by weight, the peelability is remarkably lowered, and when the nitrogen-containing organic hydroxyl compound solvent is more than 5% by weight, it is described that metal layers such as aluminum corrode.

Korean Laid-Open Patent Publication No. 1999-0062480 proposes a stripping solution comprising an organic amine compound, a protic glycol ether compound, an aprotic multipolar compound, and an alkylpyrrolidone compound.

Korean Laid-Open Patent Publication No. 2000-0008103 discloses a peeling solution for photoresist comprising 5 to 15% by weight of alkanolamine, 35 to 55% by weight of sulfoxide or sulfone compound, 35 to 55% by weight of glycol ether and surfactant A composition is proposed.

It is described here that when the alkanolamine is more than 15% by weight or the sulfoxide or sulfone compound is less than 35% by weight, the absorbency with the LCD front film becomes small, and the contact angle becomes large, so that the peeling performance by the air knife is lowered.

U.S. Patent No. 5,174,816 discloses 0.01 to 15% by weight quaternary ammonium hydroxides such as trimethyl (2-hydroxyethyl) ammonium hydroxide, and 0.1 to 20% by weight sugar or sugar alcohols such as xylitol, mannose, glucose and the like. Disclosed is a composition for removing chlorine remaining on the surface of an aluminum line pattern substrate after dry etching, including an aqueous solution containing a solution.

Japanese Laid-Open Patent Publication No. 07-028254 discloses a non-corrosive resist removal liquid comprising sugar alcohol, alcohol amine, water and quaternary ammonium hydroxide.

Japanese Laid-Open Patent Publication No. 07-247498 discloses a cleaning liquid containing a quaternary ammonium hydroxide, a sugar or a sugar alcohol, and a urea compound.

Korean Laid-Open Patent Publication No. 2001-0106537 discloses 3 to 10% by weight of an organic amine compound, N, N-dimethylacetamide (DMAc), N, N-dimethylformamide (DMF), 1,3-dimethyl-2-imide 30 to 60% by weight of solvents such as dazolidinone (DMI), N-methyl-2-pyrrolidone (NMP), 30 to 60% by weight of water, 1 to 10% by weight of catechol, resorcin or mixtures thereof, and A resist stripper composition containing 1 to 10% by weight of a straight chain polyhydric alcohol having 4 to 6 carbon atoms is disclosed.

Korean Laid-Open Patent Publication No. 2001-0062828 discloses nitrogen-containing organic hydroxylamines, water-soluble organic solvents (eg, N-methyl-2-pyrrolidone (NMP) and dimethyl sulfoxide), water, and certain benzotriazole-based compounds. Disclosed is a peeling solution for photoresists comprising

However, the organic solvent stripping agent proposed in the prior art used an environmentally harmful alkylpyrrolidone compound and sulfone compound or sulfoxide compound as an organic solvent, the peeling ability to the photoresist and residue is not sufficient, Insufficient dissolving power for the polymers forming the photoresist may cause the photoresist residue to be re-adhered to a semiconductor substrate or a glass substrate, or to generate additional solvent by-products. It is not advantageous in terms of cost, there is a limitation in cleaning residues, and there is a problem in that an organic solvent such as isopropyl alcohol and dimethyl sulfoxide is used in a subsequent rinsing process.

In addition, in the above conventional stripper composition, the corrosion prevention of the metal wiring, in particular, the substrate on which the multi-junction metal wiring including copper is formed, or the substrate on which the metal wiring and the inorganic material are formed, and the peelability of the photoresist film and the photoresist altered film We did not achieve a balance together.

In particular, due to the recent increase in the size and mass production of semiconductor devices and liquid crystal display devices, a single wafer system or an air knife method, which is treated by spraying or sheeting, is used rather than the dipping method, which is a conventional stripping method. Since the photoresist stripping method used is becoming common, it is suitable for such a spraying method, a single sheet method, and an air knife method, and is an environmentally friendly stripping liquid composition which can be peeled off without causing corrosion to both metal wires, especially copper wires and inorganic material layers. Development is required.

Therefore, the technical problem to be achieved by the present invention can be easily peeled off at low temperature, short time by deposition, spraying, sheeting or air knife method for the deteriorated or cured photoresist generated during the wet or dry etching process, peeling Excellent corrosion resistance to metal wires exposed to the solution, especially substrates with metal layers and inorganic material layers having a multi-junction structure including copper, and to use organic solvents such as isopropyl alcohol and dimethyl sulfoxide in subsequent rinsing processes. It is to provide an environmentally friendly photoresist stripper composition without adding an alkylpyrrolidone compound and a sulfone compound or a sulfoxide compound, which are environmentally harmful substances that can be rinsed with only water without need.

Another object of the present invention is to provide a method of peeling a photoresist film using the stripper composition.

1 to 4 are diagrams sequentially illustrating a metal pattern forming process by an exposure process, an etching process and a peeling process.

* Explanation of symbols for main parts of the drawings

10: semiconductor substrate or glass substrate 20: metal, inorganic material or oxide layer

30: photoresist layer

In order to achieve the above technical problem, in the present invention, 5 to 50% by weight of the organic amine compound, 5 to 50% by weight of the glycol ether compound, 0.01 to 1% by weight of the compound of formula 1, 0.1 to 10 with respect to the total amount of the composition It provides a peeling solution containing a weight percent corrosion inhibitor and the residual deionized water.

Wherein X is C or N and at least one is N, where R ⁴ , R ⁵ is a hydrogen atom or alkyl, aryl, arylalkyl, halogen, trihalomethyl, amino, heterocyclic, NHR ⁶ , NR ⁷ R ⁸ , CN, CO ₂ H, CO ₂ R ⁹ , OH or OR ¹⁰ groups, wherein R ⁶ to R ¹⁰ each represent an alkyl, aryl or aralkyl group.)

In addition, another technical problem of the present invention is 5 to 50% by weight of the organic amine compound, 5 to 50% by weight of the glycol ether compound, 0.01 to 1% by weight of the compound of formula 1, 0.1 to 10% by weight of the total amount of the composition It can be made by a peeling method using a peeling solution containing a corrosion inhibitor and a residual amount of deionized water.

According to a photoresist stripping method for achieving the above another technical problem, there is provided a photoresist and polymer stripping method characterized in that the substrate on which the photoresist film is formed and the stripping liquid composition is brought into contact with each other.

The composition may include a surfactant, an antifoaming agent, or a mixture thereof as an additive commonly added to the peeling solution.

Specific examples of the organic amine compound that can be used in the cleaning composition of the present invention include mono-, di- or tri-ethanolamine, mono-, di- or tri-propanolamine, mono-, di- or tri-isopropanolamine, butanol Amine, butyl monoethanolamine, ethyl diethanolamine, N-methylaminoethanol, and the like. In the present invention, as the amine compound, monoethanolamine, diethanolamine, triethanolamine, N-methylaminoethanol, isopropanolamine or a mixture thereof is preferable, and monoethanolamine, N-methylaminoethanol, isopropanolamine or its Mixtures are particularly preferred.

In general, glycol ether derivatives are biodegradable, environmentally friendly organic solvents, and have a wide range of applications as very good solvents that share ether and hydroxyl groups in a molecule and are well mixed with water. The addition of these glycol ethers acts as a kind of surfactant to lower the surface tension of the solution and improve the penetration, thereby enhancing the peeling ability of the peeling solution at a relatively low temperature.

The glycol ether compounds used in the present invention are generally alkylene glycol mono ethers. Specific examples may include the following compounds.

CH ₃ CH ₂ CH ₂ CH ₂ —OCH ₂ CH ₂ —OH;

CH ₃ CH ₂ CH ₂ CH ₂ —OCH ₂ CH ₂ —OCH ₂ CH ₂ —OH;

CH ₃ CH ₂ CH ₂ CH ₂ —OCH ₂ CH ₂ —OCH ₂ CH ₂ —OCH ₂ CH ₂ —OH;

CH ₃ CH ₂ CH ₂ CH ₂ —OCH ₂ CH ₂ —OCH ₂ CH ₂ —OCH ₂ CH ₂ —OCH ₂ CH ₂ —OH;

CH ₃ -OCH ₂ CH ₂ -OH;

CH ₃ -OCH ₂ CH ₂ -OCH ₂ CH ₂ -OH;

CH ₃ -OCH ₂ CH ₂ -OCH ₂ CH ₂ -OCH ₂ CH ₂ -OH;

CH ₃ -OCH ₂ CH ₂ -OCH ₂ CH ₂ -OCH ₂ CH ₂ -OCH ₂ CH ₂ -OH;

CH ₃ -OCH ₂ CH ₂ CH ₂ -OH;

CH ₃ -OCH ₂ CH ₂ CH ₂ -OCH ₂ CH ₂ CH ₂ -OH;

CH ₃ -OCH ₂ CH ₂ CH ₂ -OCH ₂ CH ₂ CH ₂ -OCH ₂ CH ₂ CH ₂ -OH;

CH ₃ -OCH ₂ CH ₂ CH ₂ -OCH ₂ CH ₂ CH ₂ -OCH ₂ CH ₂ CH ₂ -OCH ₂ CH ₂ CH ₂ -OH;

Particularly preferred glycol ether compounds are ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, triethylene glycol monobutyl ether or mixtures thereof.

Compounds of formula (I) used in the present invention contain more nitrogen atoms than benzotriazole, which is generally used as a copper corrosion inhibitor, including all four to five nitrogen atoms in the molecule.

The extra nitrogen atoms contained in the compound increase the number of sites bound to the metal surface and metal ions. When the benzotriazole is bonded to the copper surface, the nitrogen-dense portion is coordinated to the surface to show the inclined bonding structure. However, the compound of Formula 1 contains more nitrogen atoms in parallel to the surface, including the entire nitrogen atom. By showing a stable bonding structure, an equivalent effect can be obtained with a smaller addition amount.

In addition, the benzotriazole compound has an environmental problem that is not biodegradable by microorganisms, but the compound of Compound 1 has the advantage of being biodegradable.

Compounds of formula (1) used in the present invention are generally purine, 6-aminopurine, 6-methoxypurine, 6-furfurylaminopurine, uric acid, and particularly preferred compounds of formula (3) are purine, 6-aminopurine, uric acid Or mixtures thereof.

Deionized water in the composition of the present invention serves to enhance the photoresist peeling ability by activating the organic amine compound in the stripping solution composition and to mitigate corrosion of the lower metal layer by the hydroxyl generated in the direct water rinse process. .

As a corrosion inhibitor in the composition of this invention, the compound which can neutralize the hydroxyl group produced by an amine, for example, an organic acid compound, sugar alcohols, etc. can be used. The sugar alcohols may include sorbitol, mannitol, threazole, xylitol, and the like as linear polyhydric alcohols, and among them, sorbitol, mannitol, xylitol or mixtures thereof.

The sorbitol, mannitol, xylitol, or a compound thereof serves to effectively infiltrate the hydroxide ions generated by the reaction of the organic amines with the hydrogen ions of water to the contact surface between the photoresist layer and the substrate, the metal contained in the polymer It improves the peeling ability by forming a chelate reaction with the material, and forms a chelate reaction with the lower metal layer, in particular copper, aluminum, tungsten, molybdenum, chromium, titanium, and indium tin oxide (ITO), resulting from the separation solution composition. It acts as an anticorrosion agent to prevent hydroxyl groups from corroding the underlying metal layer.

In addition, the composition may be used as an additive to improve the uniformity of the peeling. The amount of the additive is not limited but is 0.001 to 10% by weight, preferably 0.001 to 5% by weight based on the total composition.

The release composition of the present invention is applied to materials such as oxide films and copper, aluminum, tungsten, molybdenum, chromium, titanium, and indium tin oxide (ITO) metal films constituting semiconductors in semiconductor manufacturing processes such as LSI devices and liquid crystal panels. It has very low corrosive properties, and is particularly suitable for metal films of multi-junction structures comprising copper.

In order to obtain the peeling composition of the present invention, the above-described compounds may be advantageously mixed in a predetermined amount, and the mixing method is not particularly limited and various known methods may be applied.

In another technical problem of the present invention, the stripping method of the present invention can be preferably used to remove the deteriorated, cured photoresist generated during the wet and dry etching process.

The peeling method can be carried out by a peeling method commonly known in the art, and a good result can be obtained as long as the peeling solution and the substrate on which the photoresist film and the polymer are formed can contact each other.

As the peeling method according to the present invention, a method using a deposition method, a spray method, a sheetfed method, and an air knife method is applied.

When peeling by immersion, spraying, sheetfed and air knife, the temperature is usually 10 to 100 ° C, preferably 20 to 80 ° C, and the deposition and spraying time is usually 5 seconds to 30 minutes, preferably Is 10 seconds to 10 minutes, but is not rigid in the present invention and can be easily adapted by those skilled in the art.

The release composition of the present invention has excellent removal performance of deteriorated and cured photoresist generated during wet and dry etching processes, and is corrosive to inorganic materials such as metal films and oxide films constituting semiconductor devices and liquid crystal display devices. This is very low and consequently can be used in the stripping process of semiconductor devices such as LSI devices, liquid crystal panels and the like.

EXAMPLE

Hereinafter, the present invention will be described in more detail with reference to the following examples, but the present invention is not limited to these examples.

The substrate was immersed in a stripping solution prepared from the compounds specified in Table 1 under treatment conditions as indicated in Table 2, rinsed with deionized water, and the results were observed with a scanning electron microscope (SEM) (HITACH, S-4700). It was. The photoresist stripping ability and the corrosion protection of the metal layer and the bottom layer were evaluated and specified in Table 2. Evaluation criteria by SEM are as follows.

[Peelability]

◎: Good

△: normal

×: defective

[Corrosion prevention ability]

◎: Good

△: normal

×: defective

division Organoamine compounds Glycol ether compounds Compound of Formula 1 Corrosion inhibitor Deionized water One TMAH (5%) - - - Remaining amount 2 MEA (10%) BG (90%) - - - 3 MEA (10%) PG (90%) - - - 4 MEA (10%) TEG (90%) - - - 5 MIPA (10%) BDG (90%) - - - 6 MIPA (10%) BDG (50%) - - Remaining amount 7 MIPA (10%) BDG (30%) - Catechol (1%) Remaining amount 8 MIPA (10%) BDG (30%) Purine (0.05%) - Remaining amount 9 MIPA (10%) BDG (30%) - Catechol (1%) Remaining amount 10 MIPA (10%) BDG (30%) - Catechol (1%) + threazole (1%) Remaining amount 11 MIPA (10%) BDG (50%) - BTA (1%) Remaining amount 12 MIPA (10%) BDG (30%) - BTA (1%) + Threosol (1%) Remaining amount 13 MEA (20%) BDG (30%) Purine (0.05%) Threazole (1%) Remaining amount

division Organoamine compounds Glycol ether compounds Compound of Formula 1 Corrosion inhibitor Deionized water 14 MEA (20%) BDG (50%) Purine (0.05%) Threazole (1%) Remaining amount 15 MIPA (10%) BDG (10%) 6-methoxypurine (0.01%) Sorbitol (1%) Remaining amount 16 MIPA (10%) EGB (20%) 6-furfurylaminopurine (0.01%) Xylitol (2%) Remaining amount 17 MIPA (10%) TEGB (30%) Uric acid (0.1%) Manitol (5%) Remaining amount 18 MEA (30%) TEGB (30%) Purine (0.5%) Manitol (5%) Remaining amount 19 MEA (30%) BDG (30%) 6-aminopurine (0.05%) Threazole (1%) Remaining amount 20 MEA (10%) BDG (50%) Purine (0.1%) Sorbitol (1%) Remaining amount 21 MEA (20%) BDG (10%) Purine (0.5%) Sorbitol (1%) Remaining amount 22 MEA (30%) EGB (20%) Aminopurine (0.5%) Xylitol (2%) Remaining amount 23 MEA (30%) TEGB (30%) Purine (0.5%) Manitol (5%) Remaining amount 24 MIPA (30%) BDG (30%) 6-aminopurine (0.5%) Xylitol (1%) Remaining amount

TMAH: Tetramethylammonium hydroxide

MEA: Monoethanolamine

MIPA: isopropanolamine

BDG: Diethylene Glycol Monobutyl Ether

EGB: Ethylene Glycol Monobutyl Ether

TEGB: triethylene glycol monobutyl ether

EG: ethylene glycol

PG: Propylene Glycol

TEG: Triethylene Glycol

division Treatment condition Peeling ability Corrosion Protection Ability Temperature (℃) Minutes Cu Multi Junction Metal Layer One 40 10 ◎ × × 2 40 10 △ × × 3 40 10 △ × × 4 40 10 △ × × 5 40 10 △ × × 6 40 10 △ × × 7 40 10 ◎ × △ 8 40 10 △ ◎ △ 9 40 10 △ × △ 10 40 10 ◎ × △ 11 40 10 △ △ △ 12 40 10 ◎ △ △ 13 40 10 ◎ ◎ ◎

division Treatment condition Peeling ability Corrosion Protection Ability Temperature (℃) Minutes Cu Multi Junction Metal Layer 14 40 10 ◎ ◎ ◎ 15 40 10 ◎ ◎ ◎ 16 40 10 ◎ ◎ ~ △ ◎ 17 40 10 ◎ ◎ ◎ 18 40 10 ◎ ◎ ◎ 19 40 10 ◎ ◎ ◎ 20 40 10 ◎ ◎ ◎ 21 40 10 ◎ ◎ ◎ 22 40 10 ◎ ◎ ◎ 23 40 10 ◎ ◎ ◎ 24 40 10 ◎ ◎ ◎ Room temperature 10 ◎ ◎ ◎

The photoresist stripping solution according to the present invention can be easily peeled off at low temperature and in a short time by deposition, spraying, sheeting or air knife method to the deteriorated or cured photoresist generated during the wet or dry etching process. Very low corrosive to materials such as copper, aluminum, tungsten, molybdenum, chromium, titanium and indium tin oxide (ITO) metal films exposed to It has excellent anticorrosiveness. In the case of using the photoresist stripping solution according to the present invention, it is possible to rinse only with water without using organic solvents such as isopropyl alcohol and dimethyl sulfoxide in a subsequent rinsing step. In addition, it is possible to provide an environmentally friendly photoresist stripping solution using an organic solvent that does not add an alkylpyrrolidone compound, a sulfone compound, a sulfoxide compound, or a benzotriazole compound.

Claims (12)

5 to 50% by weight of the organic amine compound, 5 to 50% by weight of the glycol ether compound, 0.01 to 1% by weight of the compound of formula 1, 0.1 to 10% by weight of the corrosion inhibitor and the balance of deionized water Photoresist stripper composition comprising. [Formula 1] Wherein X is C or N and at least one is N, where R ⁴ , R ⁵ are a hydrogen atom or an alkyl, aryl, amino, heterocycle, carbonyl, OH or OR group, where R is Alkyl and aryl groups.) The organic amine compound according to claim 1, wherein the organic amine compound is monoethanolamine, diethanolamine, triethanolamine, propanolamine, dipropanolamine, tripropanolamine, isopropanolamine, diisopropanolamine, triisopropanolamine, butanolamine, butyl monoethanolamine And N-methylethanolamine, ethyl diethanolamine or a mixture thereof. The photoresist stripper composition according to claim 2, wherein the organic amine compound is monoethanolamine, N-methylethanolamine, isopropanolamine or a mixture thereof. The photoresist stripper composition according to claim 1, wherein the glycol ether compound is ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, triethylene glycol monobutyl ether or a mixture thereof. The photoresist stripper composition according to claim 1, wherein the compound of formula 1 is purine, 6-aminopurine, 6-methoxypurine, 6-furfurylaminopurine, uric acid or a mixture thereof. 6. The photoresist stripper composition according to claim 5, wherein the compound of formula 1 is purine, 6-aminopurine, uric acid or a mixture thereof. The photoresist stripper composition according to claim 1, wherein the corrosion inhibitor is a linear polyhydric alcohol. 8. The photoresist stripper composition according to claim 7, wherein the linear polyhydric alcohol is sorbitol, mannitol, threazole, xylitol, or a mixture thereof. The photoresist stripper composition according to claim 1, wherein the composition contains a surfactant as an additive. The photoresist stripper composition according to claim 1, wherein the content of deionized water is 30 to 70% by weight. The photoresist stripping liquid according to any one of claims 1 to 10, which is used to strip a deteriorated or cured photoresist generated during a wet or dry etching process of a substrate formed of a metal wiring and an inorganic material layer. Composition. 12. The photoresist stripping liquid composition according to claim 11, wherein the metal wiring exposed to the stripping liquid composition is a metal wiring of a single or multiple junction structure containing copper.