WO2011008051A3 - Composition for removing resists used with copper or copper alloy - Google Patents

Composition for removing resists used with copper or copper alloy Download PDF

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Publication number
WO2011008051A3
WO2011008051A3 PCT/KR2010/004671 KR2010004671W WO2011008051A3 WO 2011008051 A3 WO2011008051 A3 WO 2011008051A3 KR 2010004671 W KR2010004671 W KR 2010004671W WO 2011008051 A3 WO2011008051 A3 WO 2011008051A3
Authority
WO
WIPO (PCT)
Prior art keywords
copper
composition
resists used
copper alloy
removing resists
Prior art date
Application number
PCT/KR2010/004671
Other languages
French (fr)
Korean (ko)
Other versions
WO2011008051A2 (en
Inventor
홍형표
홍헌표
김병묵
김태희
이승용
Original Assignee
동우 화인켐 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동우 화인켐 주식회사 filed Critical 동우 화인켐 주식회사
Priority to CN201080032028.3A priority Critical patent/CN102472984B/en
Publication of WO2011008051A2 publication Critical patent/WO2011008051A2/en
Publication of WO2011008051A3 publication Critical patent/WO2011008051A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Abstract

The present invention relates to a composition for removing resists used with copper or copper alloy, comprising: (a) from 0.1 to 30 wt.% of an amine compound; and a (b) balance of an organic solvent.
PCT/KR2010/004671 2009-07-17 2010-07-16 Composition for removing resists used with copper or copper alloy WO2011008051A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201080032028.3A CN102472984B (en) 2009-07-17 2010-07-16 Composition for removing resists used with copper or copper alloy

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090065464A KR20110007828A (en) 2009-07-17 2009-07-17 Stripper composition for copper or copper alloy interconnection
KR10-2009-0065464 2009-07-17

Publications (2)

Publication Number Publication Date
WO2011008051A2 WO2011008051A2 (en) 2011-01-20
WO2011008051A3 true WO2011008051A3 (en) 2011-04-21

Family

ID=43449995

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/004671 WO2011008051A2 (en) 2009-07-17 2010-07-16 Composition for removing resists used with copper or copper alloy

Country Status (4)

Country Link
KR (1) KR20110007828A (en)
CN (1) CN102472984B (en)
TW (1) TW201109868A (en)
WO (1) WO2011008051A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102314100A (en) * 2011-05-10 2012-01-11 刘华礼 PS (Photoshop) version retouching paste containing dimethyl sulfate
CN103019049B (en) * 2011-09-23 2014-10-08 杜邦公司 Stripping agent containing alkylamide mixture
GB2505476B (en) 2012-08-31 2019-02-27 Metaswitch Networks Ltd Processing communication sessions
KR101493294B1 (en) * 2012-10-08 2015-02-16 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 Stripping and cleaning compositions for removal of thick film resist
KR102218353B1 (en) * 2014-06-26 2021-02-22 동우 화인켐 주식회사 Etching solution composition for metal layer and manufacturing method of an array substrate for Liquid crystal display using the same
KR102291232B1 (en) * 2014-09-18 2021-08-23 주식회사 이엔에프테크놀로지 Composition for stripping a photoresist, method of forming a metal pattern using the same and method of manufacturing a display substrate using the same
KR102414295B1 (en) * 2016-01-22 2022-06-30 주식회사 이엔에프테크놀로지 Photoresist stripper composition
KR102527635B1 (en) * 2016-03-14 2023-05-02 주식회사 이엔에프테크놀로지 Thinner composition
JP6692029B1 (en) * 2019-03-25 2020-05-13 パナソニックＩｐマネジメント株式会社 Resist stripper

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010030323A (en) * 1999-09-10 2001-04-16 나까네 히사시 Photoresist stripping solution and a method of stripping photoresists using the same
KR20050001811A (en) * 2003-06-26 2005-01-07 동우 화인켐 주식회사 Photoresist stripper composition, and exfoliation method of a photoresist using it
KR20070037339A (en) * 2005-09-30 2007-04-04 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. Stripper
KR20070075303A (en) * 2006-01-12 2007-07-18 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 Ph buffered aqueous cleaning composition and method for removing photoresist residue
KR20070121523A (en) * 2006-06-22 2007-12-27 주식회사 동진쎄미켐 Composition for removing photoresist
KR20090022071A (en) * 2007-08-29 2009-03-04 주식회사 엘지화학 Stripper composition for photoresist and method for stripping photoresist

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101017738B1 (en) * 2002-03-12 2011-02-28 미츠비시 가스 가가쿠 가부시키가이샤 Photoresist stripping composition and cleaning composition
KR100751919B1 (en) * 2005-11-18 2007-08-31 램테크놀러지 주식회사 Photoresist stripping composition and method of forming a pattern using the same
KR101488265B1 (en) * 2007-09-28 2015-02-02 삼성디스플레이 주식회사 Composition for stripping and stripping method
KR20090072546A (en) * 2007-12-28 2009-07-02 삼성전자주식회사 Composition for removing photoresist and method of manufacturing array substrate using the same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010030323A (en) * 1999-09-10 2001-04-16 나까네 히사시 Photoresist stripping solution and a method of stripping photoresists using the same
KR20050001811A (en) * 2003-06-26 2005-01-07 동우 화인켐 주식회사 Photoresist stripper composition, and exfoliation method of a photoresist using it
KR20070037339A (en) * 2005-09-30 2007-04-04 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. Stripper
KR20070075303A (en) * 2006-01-12 2007-07-18 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 Ph buffered aqueous cleaning composition and method for removing photoresist residue
KR20070121523A (en) * 2006-06-22 2007-12-27 주식회사 동진쎄미켐 Composition for removing photoresist
KR20090022071A (en) * 2007-08-29 2009-03-04 주식회사 엘지화학 Stripper composition for photoresist and method for stripping photoresist

Also Published As

Publication number Publication date
CN102472984B (en) 2013-10-30
TW201109868A (en) 2011-03-16
CN102472984A (en) 2012-05-23
KR20110007828A (en) 2011-01-25
WO2011008051A2 (en) 2011-01-20

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