KR20180042797A - Resist stripper composition and method of stripping resist using the same - Google Patents

Abstract

A resist stripper composition according to the present invention comprises a compound represented by chemical formula 1 and an organic alkali compound, wherein the resist stripper composition has a strong corrosion proofing effect by comprising the compound represented by chemical formula 1 even when the resist stripper composition is a composition having high nucleophilicity or strong basicity. In chemical formula 1, R is a C_2-C_12 hydrocarbon group, wherein the hydrocarbon group is substituted or unsubstituted by one or more groups selected from the group consisting of an alkoxy group, a hydroxyl group, a carboxyl group, an amino group, a sulfonyl group, and a cyano group.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resist stripping liquid composition and a resist stripping method using the resist stripping liquid composition.

The present invention relates to a resist stripper composition used for resist stripping and a stripping method of resist using the same.

2. Description of the Related Art Recently, with the miniaturization of electronic devices, the integration and multilayering of semiconductor devices have progressed rapidly, and as a result, a photoresist (PR) pattern has been miniaturized, and a technique for stably forming micro- It became necessary.

A microcircuit of a semiconductor element or a liquid crystal display element is implemented through a photolithography process. In the photolithography step, a photoresist is uniformly applied to a conductive metal film such as aluminum, aluminum alloy, copper, copper alloy, molybdenum, or molybdenum alloy formed on the substrate, or an insulating film such as a silicon oxide film or a silicon nitride film, , And a development process is performed to form a photoresist pattern. Then, the conductive metal film and the insulation film are wet or dry etched using the patterned photoresist film as a mask to transfer the fine circuit pattern to the lower layer of the photoresist, Is removed with a stripper (stripper).

As a photoresist peeling method, a wet peeling method using a peeling liquid is employed. In this case, the peeling liquid used should basically be able to completely remove the photoresist to be removed and leave no residue on the substrate after rinsing do. In addition, it should have low corrosion resistance so as not to damage the metal film or insulating film in the lower layer of the photoresist. In addition, if mutual reaction occurs between the compositions constituting the peeling liquid, storage stability of the peeling solution becomes problematic and other properties may be exhibited depending on the order of mixing in the preparation of the peeling solution, so that there is a need for non-reactivity and high temperature stability among the compositions. In addition, it is preferable that the peeling liquid is easy to handle, less toxic, safe, and recyclable. In addition, the number of substrates that can be treated with an amount of a certain stripping liquid must be large, and the components constituting the stripping solution should be easily supplied and received.

The most important of the various conditions described above should have good removal performance for the target photoresist and low corrosion that must not damage the metal film or insulating film in the photoresist underlying layer. Photoresist stripping liquid compositions having various compositions have been studied and developed in order to satisfy such requirements.

Korean Patent Laid-Open No. 10-2008-076535 relates to a photoresist stripper composition, and more particularly, to a photoresist stripper composition comprising a water-soluble organic amine compound, N-methylacetamide (NMAc) and a photoresist containing a corrosion inhibitor And a releasing agent composition.

Korean Patent Laid-Open Publication No. 2012-0030476 discloses a photoresist stripper composition, which discloses a photoresist stripper composition comprising a cyclic amine, a solvent and a stripping promoter. Amine, a solvent, a corrosion inhibitor, and a release promoter.

Korean Patent Laid-Open No. 10-2001-0062828 relates to a photoresist peeling liquid and a photoresist peeling method using the same, wherein (a) a nitrogen-containing organic hydroxy compound, (b) a water-soluble organic solvent (c) d) a photoresist peeling liquid containing a specific benzotriazole-based compound, and a photoresist peeling method using the same. In particular, in the field of using a SiO ₂ substrate used for a liquid crystal display device or the like, A photoresist peeling liquid excellent in the barrier properties of a substrate on which a Cu wiring is formed or a substrate on which an inorganic material layer such as a metal wiring and a polysilicon film is formed and which has excellent peelability of a photoresist layer and a denatured film, Discloses a resist stripping method.

However, the above-mentioned prior art documents are applied to a substrate on which general copper (Cu) wirings are formed, and there is a problem that the effect of preventing corrosion is insignificant in the composition of resist stripping solution having a strong alkali or strong base.

Korean Patent Publication No. 10-2008-076535 (Aug. 20, 2008) Korea Open Patent No. 2012-0030476 (March 28, 2012 Dongjin Semichem Co., Ltd.) Korean Patent Laid-Open No. 10-2001-0062828 (Jul. 2001, DOCOMO KOGYO CO., LTD.)

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a resist stripper composition exhibiting a strong corrosion inhibiting effect even in a composition such as a strong alkali or strong base, and a resist stripping method using the same.

It is another object of the present invention to provide a method of manufacturing a flat panel display substrate including a step of cleaning a flat panel display substrate using the resist stripping liquid composition and a flat panel display substrate manufactured using the method.

The present invention relates to a resist stripping liquid composition comprising a compound represented by the following general formula (1) and an organic alkali compound.

[Chemical Formula 1]

(In the formula 1,

And R is a C ₂ to C 12 hydrocarbon group, wherein the hydrocarbon group is substituted or unsubstituted with at least one group selected from the group consisting of an alkoxy group, a hydroxyl group, a carboxyl group, an amino group, a sulfonyl group and a cyano group.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, including: forming a resist pattern on a substrate on which a metal layer is formed; Patterning the metal layer with the resist pattern; And a step of peeling the resist using the above resist stripping liquid composition.

The present invention also relates to a method of manufacturing a flat panel display substrate including a step of cleaning the flat panel display substrate using the above resist stripping liquid composition.

The present invention also relates to a flat panel display substrate manufactured by the above-described method of manufacturing a flat panel display substrate.

The resist stripper composition according to the present invention has an advantage in that it has strong peeling force and anticorrosive force because it contains a compound represented by Chemical Formula 1 and an organic alkali compound even when having a composition such as a strong alkali or strong base.

In addition, the resist stripper composition according to the present invention has an advantage of preventing stains from occurring in the process.

The resist stripping method using the resist stripper composition according to the present invention has an advantage in that it is possible to impart a strong corrosion prevention effect even when the compound represented by the general formula (1) is contained in a small amount, .

Hereinafter, the present invention will be described in more detail.

< Resist  Release liquid composition>

The present invention relates to a resist stripping liquid composition comprising a compound represented by the following general formula (1) and an organic alkali compound.

[Chemical Formula 1]

In Formula 1,

R is a C ₂ to C ₁₂ hydrocarbon group, wherein the hydrocarbon group is substituted or unsubstituted with at least one group selected from the group consisting of an alkoxy group, a hydroxyl group, a carboxyl group, an amino group, a sulfonyl group and a cyano group.

The compound represented by the formula (1)

The resist stripping composition of the present invention comprises a compound represented by the following formula (1).

[Chemical Formula 1]

Wherein R is a C ₂ to C ₁₂ hydrocarbon group, wherein the hydrocarbon group is substituted or at least substituted with one or more groups selected from the group consisting of an alkoxy group, a hydroxyl group, a carboxyl group, an amino group, a sulfonyl group and a cyano group; .

In the above formula (1), when R is a hydrocarbon group having 2 to 12 carbon atoms, it is preferable from the standpoint of a damping force. When R is a hydrocarbon group having more than 12 carbon atoms in Formula 1, the compound of Chemical Formula 1 may be mixed with other constituents included in the resist stripper composition, such as an amphoteric organic compound, a primary alcohol compound, or an organic alkali compound , It is preferable that R is a hydrocarbon group having 2 to 12 carbon atoms.

In addition, when the compound represented by Chemical Formula 1 is included in the resist stripper composition, interfacial corrosion between the metal surface and the alloy layer can be prevented. Furthermore, when the compound represented by Formula 1 is included in the resist stripper composition, it is possible to impart an excellent corrosion inhibiting effect in a very small amount. Therefore, the resist stripper composition can contain a strong amine or alkali, Thereby, there is an advantage that the peeling force can also be increased. As described above, since the compound represented by the formula (1) can impart a strong corrosion inhibiting effect even when a small amount is added, it can have a great advantage in terms of overall cost reduction.

Further, even when the compound represented by Formula 1 is included in the resist stripper composition, no color change of the stripper composition occurs.

In one embodiment of the present invention, the compound represented by Formula 1 is selected from the group consisting of 5- (octyloxy) -1H-benzotriazole, 5- (hexyloxy) -1H-benzotriazole, 5- (heptyloxy) -1H-benzotriazole, and 5- (2-ethylhexyloxy) -1H-benzotriazole. However, the present invention is not limited thereto.

The compound represented by Formula 1 may be contained in an amount of 0.001 to 5 wt%, more preferably 0.001 to 3 wt%, based on 100 wt% of the resist stripper composition.

When the compound represented by the formula (1) is contained in the above range based on 100% by weight of the total resist stripper composition, it is preferable from the viewpoint of economical efficiency or prevention of corrosion. If the amount of the compound represented by Chemical Formula 1 is less than the above range, corrosion of the metal layer may occur and damage to the device may occur to some extent. If the amount exceeds the above range, economical efficiency due to an increase in price may be deteriorated, It is preferable that the above range is satisfied because the resist stripping solution may remain on the substrate or may cause stains due to the remaining stripper solution.

Magnetostrictive  Organic compound

The resist stripping composition of the present invention may contain an aprotic organic compound.

The non-magnetic organic compound may dissolve or disperse the components contained in the resist stripper composition, thereby allowing the resist removal reaction to proceed more smoothly. In addition, when the resist stripping liquid composition contains the non-magnetic organic compound, it is advantageous in exhibiting the removal performance of the resist polymer modified or crosslinked by etching or the like, and at the same time, the number of treated wafers is advantageously increased.

The non-magnetic organic compound may specifically be a non-magnetic polar compound, and it is preferable that the non-magnetic polar compound is not too high or low in boiling point for proper peeling force. Specifically, the non-magnetic organic compound preferably has a boiling point of 130 to 250 ° C.

The non-magnetic organic compounds include, but are not limited to, pyrrolidone compounds such as 1-acetylpyrrolidine, 2-pyrrolidone, N-methylpyrrolidone, and N-ethylpyrrolidone; Imidazolidinone compounds such as 1,3-dimethyl-2-imidazolidinone and 1,3-dipropyl-2-imidazolidinone; Sulfoxide compounds such as dimethyl sulfoxide and sulfolane; Phosphate compounds such as triethyl phosphate, tributyl phosphate and the like; N, N-dimethylformamide, N, N-diethylformamide, N, N-dimethylacetoacetamide, N, N-tertbutylformamide, acetamide, N, N-dimethylacetamide, N, N-dimethylacetamide, N, N-diethylacetamide, N- (2-hydroxyethyl) N, N-dimethylpropionamide, N, N-dimethylpropionamide, 3- (2-ethylhexyloxy) -N, N- dimethylpropionamide, 3-butoxy- Amide compounds such as amide; These may be used singly or in combination of two or more.

The non-magnetic organic compound may be contained in an amount of 45 to 90% by weight, more specifically 50 to 90% by weight, based on 100% by weight of the total resist stripper composition.

When the non-magnetic organic compound is contained within the above range based on 100 wt% of the entire resist stripper solution composition, there is an advantage in that the removal performance of the resist polymer degraded or crosslinked by etching or the like is excellent. When the amount of the non-magnetic organic compound is less than the above range, the removal power of the crosslinked resist and the overall process capacity may be somewhat lowered. When the amount of the non-magnetic organic compound exceeds the above range, The content of other components contained in the solution composition may be reduced, which may adversely affect the performance of the resist stripping solution composition.

Primary alcohol compounds

The resist stripping composition of the present invention may contain a primary alcohol compound.

The primary alcohol compound dissolves the solidified resist polymer and facilitates the removal of the peeling solution by water in the deionized water rinsing process after the peeling of the resist so that the adsorption of the resist dissolved in the peeling solution It is possible to minimize the re-precipitation.

The primary alcohol compound is, for example, tetrahydroperfuryl alcohol, hydroxymethylcyclopentene, 4-hydroxymethyl-1,3-dioxolane, 2-methyl-4-hydroxymethyl-1,3-dioxolane 1,3-dioxolane-4-methanol, 1,3-propanediol, 1,3-butanediol, 1,4-butanediol, 2-methoxyethanol, polyethylene glycol monomethyl ether, polyethylene Examples of the glycol ether include diethylene glycol monomethyl ether, diethylene glycol ethyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, ethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monoethyl ether, Glycol monoisopropyl ether, ethylene glycol monobutyl ether, monoisopropyl glycol ether, diethylene glycol monobutyl ether, polyethylene glycol, polyethylene glycol monomethyl ether, Polyethylene glycol monobutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, and propylene glycol monomethyl ether acetate. These may be used singly or in combination of two or more kinds. But is not limited thereto.

The primary alcohol compound may be contained in an amount of 3 to 55% by weight, specifically 5 to 50% by weight based on 100% by weight of the total resist stripper composition.

When the primary alcohol compound is contained within the above range, there is an advantage in that it is easy to remove the peeling liquid by water in the pure water rinsing process. When the primary alcohol compound is contained in an amount of less than 3% by weight, when the resolved resist polymer is remained on the metal layer, the solubility of the decomposed resist polymer is lowered, and there may be some unevenness. When the primary alcohol mixture exceeds the above range The peeling liquid may remain on the substrate due to the high viscosity, and the occurrence of stains may become somewhat severe. Further, since the content of relatively different components is reduced, the peeling ability, removing power and solubility of the crosslinked photoresist may be somewhat lowered, and there may occur a problem that the number of substrates that can be treated with an amount of a certain amount of peeling liquid may be lowered have.

Organic alkaline compound

The resist stripping solution composition of the present invention comprises an organic alkali compound. The organic alkali compound strongly penetrates into the polymer matrix of the modified or cross-linked resist under various processes such as dry or wet etching, ashing, or ion implant processing, thereby forming a bond intramolecularly or intermolecularly And forming a vacant space in a structurally weak portion in the resist remaining on the substrate, thereby deforming the resist into amorphous polymer gel state, thereby allowing the resist attached on the substrate to be easily removed. .

When the organic alkaline compound is included in the resist stripping liquid composition, the photoresist removing ability and the corrosion resistance of the metal under the substrate are strengthened, and when the organic alkaline compound shows excellent performance in removing, the corrosion resistance of the lower metal is also increased. There is a problem in that the deterioration of the corrosion ability is deteriorated in order to minimize the damage of the metal, and thus the deterioration of the peeling speed and the half-interaction which lowers the dissolving power are caused.

Therefore, since the resist stripper composition of the present invention contains the compound represented by the above formula (1), even when the organic alkaline compound has a strong removing ability, the resist stripper composition has strong anticorrosive effect, Of course, even when a small amount is included, a strong corrosion prevention effect can be imparted, so that there is an advantage that an inexpensive cost effect can be exhibited.

The organic alkali compound may be, but not limited to, an organic alkali compound mainly used in a stripper for a thin film transistor (TFT), for example, tetramethylammonium hydroxide, tetraethylammonium hydroxide and amines. And the amines include primary amines such as methylamine, ethylamine, monoisopropylamine, n-butylamine, sec-butylamine, isobutylamine, t-butylamine and pentylamine; Examples of the secondary amine such as dimethylamine, diethylamine, dipropylamine, diisopropylamine, dibutylamine, diisobutylamine, methylethylamine, methylpropylamine, methylisopropylamine, methylbutylamine and methylisobutylamine Amine; Tertiary amines such as diethylhydroxyamine, trimethylamine, triethylamine, tripropylamine, tributylamine, tripentylamine, dimethylethylamine, methyldiethylamine and methyldipropylamine; But are not limited to, choline, monoethanolamine, diethanolamine, triethanolamine, monopropanolamine, monomethylethanolamine, 2-aminoethanol, 2- (ethylamino) ethanol, 2- Amino-2-propanol, 2-amino-1-propanol, 3-amino-2-aminoethylaminoethanol, Alkanolamines such as 1-propanol, 4-amino-1-butanol, dibutanolamine and aminoethylethanolamine; (Methoxymethyl) dimethylamine, (methoxymethyl) dimethylamine, (butoxymethyl) dimethylamine, (isobutoxymethyl) dimethylamine, (methoxymethyl) diethanolamine (Methoxymethyl) aminoethanol, methyl (butoxymethyl) aminoethanol, 2- (2-aminoethoxy) ethanol and the like And the like.

The organic alkaline compound may be contained in an amount of 0.1 to 20% by weight, more specifically 0.5 to 15% by weight based on 100% by weight of the total resist stripper composition.

When the content of the organic alkali compound is within the above range, it is preferable from the viewpoint of peeling force or anticorrosive force. If the organic alkaline compound is contained in an amount less than the above range, there may arise a problem that the foreign matter of the resist remains somewhat due to the lowering of the resist peeling force. When the organic alkaline compound exceeds the above range, The problem may be difficult.

additive

In still another embodiment of the present invention, the resist stripper composition may further comprise at least one additive selected from the group consisting of a corrosion inhibitor and deionized water.

(1) Corrosion inhibitors

The corrosion inhibitor can be further used particularly when the degree of denaturation of the photoresist to be removed is too high to be in contact with the peeling liquid for a long time or repeatedly, or when the processing conditions are severe.

Examples of the corrosion inhibitor include, but are not limited to, benzotriazole, tolythriazole, methyltolytriazole, 2,2 '- [[[benzotriazole] methyl] imino] bisethanol, 2,2' - [[methyl-1-hydrogen-benzotriazol-1-yl] methyl] imino] bist methanol, 2,2 ' ] - [[[methyl-1-hydrogen-benzotriazol-1-yl] methyl] imino] bisethanol, 2,2 ' Yl] methyl] imino] bismethylamine, 2,2 '- [[[methyl-1-hydrogen-benzotriazol- Methyl-1-hydrogen-benzotriazole, 5-methyl-1-hydrogen-benzotriazole, 4-methyl-4,5 , 6,7-tetrahydro-1H-benzo [1,2,3] triazole, 5-methyl-4,5,6,7-tetrahydro-1H- benzo [1,2,3] triazole, 4 , 6-dimethyl-4,5,6,7-tetrahydro-1H-benzo [1,2,3] triazole 5,6-Dimethyl- Tetrahydro-1H-benzo [1,2,3] triazole with an azole compound such as 2-methylphenol, 2,6-dimethylphenol, 2,4,6-trimethylphenol, 2-propylphenol, 2,6-tripropyl-4-methylphenol, 2-t-butylphenol, 2-t-butylphenol, Butylphenol, 2,4,6-tri-t-butylphenol, 2,6-di-t-butyl-4-methylphenol, 2,4-dimethyl- , t-butyl-4-methoxyphenol and the like, monocarboxylic acids such as formic acid, acetic acid and propionic acid, acids such as malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, , Dicarboxylic acids such as glutaconic acid, tricarboxylic acids such as trimellitic acid and tricarvaleric acid, and organic acids such as hydroxyacetic acid, lactic acid, salicylic acid, malic acid, tartaric acid, citric acid, gluconic acid and oxycarboxylic acid Ryu; Maleic amide esters, maleic amide esters, maleic amide esters, fumaric amide esters, oxalic amide esters, malonic amide esters, glutaric amide esters, acetic amide esters, lactic amide esters, And organic acid amide esters such as tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters and tartaric acid esters.

The corrosion inhibitor may be contained in an amount of 0.001 to 3% by weight, specifically 0.005 to 0.5% by weight based on 100% by weight of the total resist stripper composition. If the corrosion inhibitor is included within the above range, the economical efficiency is excellent. Since the corrosion inhibitor can be used in a smaller amount than conventionally used, various problems caused by the use of the corrosion inhibitor can be solved.

(2) deionized water

The deionized water may be further included in the resist stripper composition. When the deionized water is further contained, it is possible to improve the activation of the alkaline compound to increase the peeling speed, and it is easy to mix with the primary alcohol compound and the aprotic polar solvent. Thus, in the rinsing step with deionized water after the peeling step, There is an advantage that the resist stripper solution composition can be completely removed in a short time without remaining.

In another embodiment of the present invention, the deionized water may include 0.01 to 30% by weight, more specifically 0.1 to 10% by weight based on 100% by weight of the total resist stripper composition, but is not limited thereto. However, when the deionized water is contained within the above range, it is preferable in terms of the peeling speed.

The production of the photoresist stripper composition described above is not particularly limited in the present invention. For example, the above-mentioned components and contents can be sufficiently mixed in an agitator or a circulating apparatus.

The photoresist stripper liquid composition may be used in a selective stripping process of a photoresist film to form a fine pattern in semiconductor device production.

Since the photoresist stripper composition of the present invention contains the compound represented by Chemical Formula 1 and the organic alkali compound, even if the composition has high nucleophilicity or strong basicity, the photoresist stripper solution composition of the present invention has a strong anti- And the performance is maintained even if the time passes at a high temperature,

When the compound represented by the formula (1) and the primary or secondary amine as the organic alkali compound are used together, it has a strong peeling force against the resist and, even when the compound represented by the formula (1) is contained in a small amount, There is an advantage that an inexpensive cost effect can be exhibited.

In addition, the photoresist stripper composition of the present invention can be used not only for semiconductor devices, but also for a manufacturing process of a display device, a MEMS device, a wiring board, etc. including the same.

< Resist  Removal method>

According to still another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a resist pattern on a substrate on which a metal layer is formed; Patterning the metal layer with the resist pattern; And a step of peeling the resist using the above resist stripping liquid composition.

Specifically, a photoresist is coated on a metal layer formed on the substrate to form a photoresist pattern, and the metal layer is etched and patterned using the photoresist having the pattern formed thereon as a mask. Thereafter, the photoresist stripper composition according to the present invention can be used to peel off the photoresist.

The photoresist includes a positive type photoresist, a negative type photoresist, and a positive type / negative type dual tone photoresist. The photoresist to which the present invention is not particularly limited is particularly effective. Examples of the photoresist include novolak type phenol resin And a photoactive compound based on diazonaphthoquinone.

The metal layer may be a conductive metal layer, for example, a single layer made of a metal such as aluminum, copper, neodymium, or molybdenum, or an alloy of these metals, or a multi-layered film of two or more layers. More specifically, it may be a single film comprising aluminum, copper or an alloy thereof, or a multilayer film of two or more layers, or a single film containing aluminum, copper or an alloy thereof and neodymium, molybdenum or an alloy thereof, .

The method of peeling the photoresist from the substrate on which the fine circuit pattern is formed by using the photoresist stripper composition of the present invention includes a dip method in which a plurality of strips are simultaneously dipped in a large amount of the stripper composition to be stripped, And a photoresist is removed by spraying (spraying) the stripping liquid onto the substrate. In this case, the application time and temperature of the immersion, spray (spraying) or immersion and spraying may be selected by those skilled in the art as being easy or suitable.

< flat  Panel display device>

The present invention also provides a method of manufacturing a flat panel display substrate including a step of cleaning or peeling a flat panel display substrate using the above resist stripping liquid composition.

The present invention also relates to a flat panel display substrate manufactured using the above-described method for manufacturing a flat panel display substrate.

The present invention also provides a flat panel display device including the aforementioned flat panel display substrate.

Since the flat panel display substrate manufactured by the above-described manufacturing method and the flat panel display device including the same are perfectly cleaned in the manufacturing process and the corrosion of the metal wiring including aluminum and / or copper hardly occurs, .

The photoresist stripper liquid composition according to the present invention can be applied not only to a tactical plate flat panel display but also to various image display devices.

Hereinafter, the present invention will be described in detail by way of examples to illustrate the present invention. However, the embodiments according to the present disclosure can be modified in various other forms, and the scope of the present specification is not construed as being limited to the above-described embodiments. Embodiments of the present disclosure are provided to more fully describe the present disclosure to those of ordinary skill in the art. In the following, "%" and "part" representing the content are by weight unless otherwise specified.

Example  1 to 9 and Comparative Example  1 to 8:  Resist  Preparation of release liquid composition

Resist stripper compositions were prepared according to the components and compositions shown in Table 1 below. At this time, in order to measure the corrosion strength of the compound of formula (1), strong primary amine or secondary amine was used, and in the case of tertiary amine, deionized water was added to enhance the activation.

(weight%) The compound of formula (1) Compounds not containing the structure of formula (1) Magnetostrictive
Organic compound Primary alcohol compounds Organic alkaline compound DIW Kinds content Kinds content Kinds content Kinds content Kinds content content Example 1 A1 0.05 - - B1 62 C1 32.95 AEEA 5 - Example 2 A2 0.1 - - B2 70 C2 24.9 AEEA 5 - Example 3 A3 0.15 - - B3 61 C3 33.85 AEEA 5 - Example 4 A3 / A2 0.05 / 0.05 - - B1 70 C1 22.9 MMEA 7 - Example 5 A1 0.1 - - B1 85 C1 6.9 DEA 8 - Example 6 A2 0.08 - - B2 77 C1 7.92 MDEA 10 5 Example 7 A1 0.02 - - B3 65 C2 29.98 MMEA 5 - Example 8 A1 0.1 - - - - C3 91.9 MDEA 8 - Example 9 A1 0.1 - - B3 96.9 - - MEA 3 - Comparative Example 1 - - - - B1 70 C2 30 - - - Comparative Example 2 - - - - B1 68 C2 30 MMEA 2 - Comparative Example 3 A1 0.1 - - B2 70 C3 29.9 - - - Comparative Example 4 - - A4 0.1 B1 53 C2 39.9 AEEA 7 - Comparative Example 5 - - A5 0.1 B3 65 C3 32.9 MEA 2 - Comparative Example 6 - - A6 0.1 B1 45 C1 49.9 AEEA 5 - Comparative Example 7 - - A7 0.1 B1 55 C1 42.9 MEA 2 - Comparative Example 8 - - A8 0.1 B2 77 C1 17.9 MMEA 5 - A1: 5- (octyloxy) -1H-benzotriazole
A2: 5- (2-ethylhexyloxy) -1H-benzotriazole
A3: 5- (hexyloxy) -1H-benzotriazole
A4: benzotriazole
A5: Tolythriazole
A6: 2,2 - [(1H-benzotriazol-1-ylmethyl) imino] bisethanol
A7: 4 or (5) -methyl-4,5,6-tetrahydro-1H-benzo [1,2,3] triazole
A8: 5- (Methoxy) -1H-benzotriazole
B1: N-methylpyrrolidone
B2: N-ethyl formamide
B3: N, N-diethylformamide
C1: 4-hydroxymethyl-1,3-dioxolane
C2: diethylene glycol monomethyl ether
C3: diethylene glycol monoethyl ether
MEA: Monoethanolamine
AEEA: Aminoethylethanolamine
DEA: diethanolamine
MMEA: Monomethylethanolamine
MDEA: N-methyldiethanolamine

Experimental Example  One : Resist  The peeling liquid composition Peel force  evaluation

In order to confirm the peeling effect of the resist stripper composition according to Examples and Comparative Examples, a photoresist was uniformly coated on a 10 × 10 cm glass with a thickness of 1.2 μm using a spin coater, and then baked at 170 ° C. for 10 minutes And cut into 2 x 2 cm to prepare a substrate.

Thereafter, the resist stripper compositions of Examples and Comparative Examples were kept constant at 60 占 폚, and then the objects were immersed at different immersion times to evaluate the peel force.

After that, pure water was cleaned for 1 minute in order to remove the peeling liquid remaining on the substrate. To clean pure water remaining on the substrate after cleaning, the sample was completely dried with nitrogen.

The denaturation of the substrate or the curing resist and the dry etch residue removal performance were confirmed using a scanning electron microscope (SEM, Hitachi S-4700), and the results are shown in Table 2 below, which shows the removal time in the glass substrate .

Experimental Example  2 : Resist  For the metal wiring of the stripping solution composition Revolution  evaluation

In order to evaluate the etching performance of the resist stripping solution composition on the metal wiring, a copper single layer and a substrate in which single and multilayer wiring using copper and an alloy of niobium, molybdenum and titanium were exposed were prepared. Thereafter, the resist stripper composition according to the examples and the comparative example was kept constant at a temperature of 60 DEG C, and then the copper single film and the single and multi-layer film wiring using the alloy of copper, niobium, molybdenum, Was immersed in the resist stripper composition for 10 minutes, and then cleaned and dried, and evaluated using a scanning electron microscope (SEM, Hitachi S-4700). The results are shown in Table 2 below.

In addition, the corrosion of copper single layer and copper, niobium, molybdenum, and titanium using a focused ion beam (FIB-SEM, Focused ion beam-SEM) The results are shown in Table 3 below.

Experimental Example  3: Evaluation of stain occurrence

In order to confirm the effect of preventing the formation of stain on the resist stripper composition, a substrate on which a Cu layer was formed on a glass substrate by a thin film sputtering method and a photoresist (DWP-520) All the solvent was removed by baking for one day and solidified.

0.5% of the solidified photoresist prepared in the photoresist stripping solution composition of the examples and the comparative example was added, and sufficiently dissolved at room temperature, and the temperature was kept constant at 50 캜. Thereafter, the Cu substrate was immersed for 2 minutes, removed, and the strippers and resist remaining on the substrate were removed by using a nitrogen gas at a constant pressure, and then placed on a flat surface. Five drops of deionized water were dropped to different positions using a pipette And left for 1 minute.

Thereafter, the substrate was rinsed with deionized water for 1 minute, and then the deionized water remaining on the substrate was completely removed using nitrogen. This is to judge the degree of occurrence of staining in an actual TFT process. The entire surface was inspected and evaluated using a halogen lamp, a digital camera and an electron microscope to determine the degree of staining of the substrate.

At this time, evaluation criteria for generation of stains and stains are as follows.

◎: Very good (no corrosion or staining)

Good: Good (almost no corrosion or staining)

△: Normal (some corrosion, surface roughness change or stain somewhat)

X: defective (occurrence of etching or occurrence of unevenness)

division Peel force Revolution Stain occurrence Mo / Al Cu Cu / X Mo Mo / Al Mo MoNb MoTi Ti Example 1 <10 sec ◎ ○ ◎ ◎ ◎ ◎ ◎ ◎ Example 2 <10 sec ◎ ○ ◎ ◎ ◎ ◎ ◎ ◎ Example 3 <10 sec ◎ ○ ◎ ◎ ◎ ◎ ◎ ◎ Example 4 20 sec ◎ ○ ◎ ◎ ◎ ◎ ◎ ◎ Example 5 20 sec ◎ ○ ◎ ◎ ◎ ◎ ◎ ◎ Example 6 30sec ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ Example 7 20 sec ◎ ○ ◎ ◎ ◎ ◎ ◎ ◎ Example 8 8min ◎ ◎ ◎ ◎ ◎ ◎ ◎ ◎ Example 9 <10 sec ◎ ○ ◎ ◎ ◎ ◎ ◎ × Comparative Example 1 > 10 min ◎ ○ ◎ ◎ ◎ ◎ ◎ × Comparative Example 2 <10 sec ◎ ○ × × × × × × Comparative Example 3 > 10 min ◎ ○ ◎ ◎ ◎ ◎ ◎ × Comparative Example 4 <10 sec ◎ ○ × × × × × △ Comparative Example 5 <10 sec ◎ ○ △ △ △ △ △ △ Comparative Example 6 <10 sec ◎ ○ △ △ △ △ △ △ Comparative Example 7 <10 sec ◎ ○ ○ ○ ○ ○ ○ × Comparative Example 8 <10 sec ◎ ○ × × × × × ×

division Revolution Cu / X Mo MoNb MoTi Ti Example 1 ◎ ◎ ◎ ◎ Example 2 ◎ ◎ ◎ ◎ Example 3 ◎ ◎ ◎ ◎ Example 4 ◎ ◎ ◎ ◎ Example 5 ◎ ◎ ◎ ◎ Example 6 ◎ ◎ ◎ ◎ Example 7 ◎ ◎ ◎ ◎ Example 8 ◎ ◎ ◎ ◎ Example 9 ◎ ◎ ◎ ◎ Comparative Example 1 ◎ ◎ ◎ ◎ Comparative Example 2 × × ◎ ◎ Comparative Example 3 ◎ ◎ ◎ ◎ Comparative Example 4 × × ◎ ◎ Comparative Example 5 × × ◎ ◎ Comparative Example 6 × × ◎ ◎ Comparative Example 7 × × ◎ ◎ Comparative Example 8 × × ◎ ◎

As can be seen from Tables 2 and 3, when the composition of the present invention contains both the compound of Formula 1 and the organic alkali compound (Examples 1 to 9) and the composition of the present invention is not satisfied (Comparative Examples 1 to 8 ), It was confirmed that the effect of at least two of the peeling force and the anticorrosive property or the anti-smudge effect was superior. On the other hand, in the case of Comparative Example 3 containing the compound of Formula 1 of the present invention but not including the organic alkaline compound, it was confirmed that the peeling force was poor and the substrate was stained. In the compound of Formula 1, , It was confirmed that the damping force was not good and the dirt was also formed on the substrate.

Specifically, Example 8 including both the compound of Formula 1 and the organic alkali compound of the present invention was found to have not only excellent antifoaming ability but also no staining, as compared with Comparative Examples 1 to 8 , And in Example 9, peeling force and damping force were both excellent.

In addition, in the case of Examples 1 to 7 including both the aprotic organic compound and the primary alcohol compound in addition to the compound of Formula 1 and the organic alkaline compound of the present invention, both the peeling force and the damping force are excellent, It was confirmed that the effect of prevention was also excellent.

Claims (10)

A resist stripping liquid composition comprising a compound represented by the following formula (1) and an organic alkali compound:
[Chemical Formula 1]

(In the formula 1,
And R is a C ₂ to C ₁₂ hydrocarbon group, wherein the hydrocarbon group is substituted or unsubstituted with at least one group selected from the group consisting of an alkoxy group, a hydroxyl group, a carboxyl group, an amino group, a sulfonyl group and a cyano group. The method according to claim 1,
The resist stripping solution composition
Wherein the resist stripping liquid composition further comprises at least one of an aprotic organic compound and a primary alcohol compound. The method according to claim 1,
Benzothiazole, 5- (hexyloxy) -1H-benzotriazole, 5- (heptyloxy) -1H-benzotriazole and 5- (2-ethylhexyloxy) -1H-benzotriazole. The method according to claim 1,
The compound represented by the formula (1)
Wherein the resist stripping liquid composition comprises 0.001 to 5% by weight based on 100% by weight of the total resist stripping composition. 3. The method of claim 2,
The non-magnetic organic compound
And 45 to 90% by weight based on 100% by weight of the total resist stripper composition. 3. The method of claim 2,
The primary alcohol compound
And 3 to 55% by weight based on 100% by weight of the total resist stripper composition. 3. The method of claim 2,
The organic alkali compound
And 0.1 to 20% by weight based on 100% by weight of the total resist stripper composition. The method according to claim 1,
The resist stripping solution composition
Wherein the resist stripping liquid composition further comprises at least one additive selected from the group consisting of corrosion inhibitors and deionized water. 9. The method of claim 8,
Wherein the deionized water comprises 0.01 to 30% by weight based on 100% by weight of the total resist stripper composition. Forming a resist pattern on a substrate on which a metal layer is formed;
Patterning the metal layer with the resist pattern; And
A resist peeling method, comprising the step of peeling off a resist using the resist stripping composition according to any one of claims 1 to 9.