TW200617602A - Resist composition for EUV and process for forming resist pattern - Google Patents

Resist composition for EUV and process for forming resist pattern

Info

Publication number
TW200617602A
TW200617602A TW094130565A TW94130565A TW200617602A TW 200617602 A TW200617602 A TW 200617602A TW 094130565 A TW094130565 A TW 094130565A TW 94130565 A TW94130565 A TW 94130565A TW 200617602 A TW200617602 A TW 200617602A
Authority
TW
Taiwan
Prior art keywords
euv
resist composition
acid
resist
forming
Prior art date
Application number
TW094130565A
Other languages
Chinese (zh)
Other versions
TWI292085B (en
Inventor
Hideo Hada
Taku Hirayama
Daiju Shiono
Takeo Watanabe
Hiroo Kinoshita
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200617602A publication Critical patent/TW200617602A/en
Application granted granted Critical
Publication of TWI292085B publication Critical patent/TWI292085B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C39/00—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
    • C07C39/12—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings
    • C07C39/15—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings with all hydroxy groups on non-condensed rings, e.g. phenylphenol
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

The resist composition of the present invention is a resist composition for the use of EUV including (A1) a protected body in which a part or all of phenolic hydroxy group in a polyphenol compound (a) represented by the following general formula (I): , is protected by an acid dissociative dissolution inhibiting agent and (B) an acid generating agent component which generates an acid by exposure.
TW94130565A 2004-09-09 2005-09-06 Resist composition for euv and process for forming resist pattern TWI292085B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004262306A JP2006078744A (en) 2004-09-09 2004-09-09 Resist composition for euv, and resist pattern forming method

Publications (2)

Publication Number Publication Date
TW200617602A true TW200617602A (en) 2006-06-01
TWI292085B TWI292085B (en) 2008-01-01

Family

ID=36036281

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94130565A TWI292085B (en) 2004-09-09 2005-09-06 Resist composition for euv and process for forming resist pattern

Country Status (4)

Country Link
JP (1) JP2006078744A (en)
KR (1) KR20070057211A (en)
TW (1) TWI292085B (en)
WO (1) WO2006027996A1 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7851129B2 (en) 2004-10-29 2010-12-14 Tokyo Ohka Kogyo Co., Ltd. Resist composition, resist pattern forming method and compound
US7862981B2 (en) 2005-06-17 2011-01-04 Tokyo Ohka Kogyo Co., Ltd. Compound, positive resist composition and method of forming resist pattern
US7897319B2 (en) 2004-07-28 2011-03-01 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method of forming resist pattern
US7901865B2 (en) 2004-09-08 2011-03-08 Tokyo Ohka Kogyo Co., Ltd. Resist composition and process for formation of resist patterns
US7923192B2 (en) 2004-02-20 2011-04-12 Tokyo Ohka Kogyo Co., Ltd. Base material for pattern-forming material, positive resist composition and method of resist pattern formation
US7981588B2 (en) 2005-02-02 2011-07-19 Tokyo Ohka Kogyo Co., Ltd. Negative resist composition and method of forming resist pattern
US8206887B2 (en) 2005-05-17 2012-06-26 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and resist pattern forming method
US8389197B2 (en) 2005-07-05 2013-03-05 Tokyo Ohka Kogyo Co., Ltd. Compound, positive resist composition and resist pattern forming method

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4959171B2 (en) * 2005-04-15 2012-06-20 東京応化工業株式会社 Compound, dissolution inhibitor, positive resist composition, resist pattern forming method
WO2006134811A1 (en) * 2005-06-13 2006-12-21 Tokyo Ohka Kogyo Co., Ltd. Polyhydric phenol compound, compound, positive resist composition, and method of forming resist pattern
JP5064405B2 (en) 2006-10-13 2012-10-31 本州化学工業株式会社 Novel bis (formylphenyl) alkanes and novel polynuclear phenols derived therefrom
JP2008164904A (en) * 2006-12-28 2008-07-17 Tokyo Ohka Kogyo Co Ltd Positive resist composition and resist pattern forming method
JP2009053665A (en) * 2007-08-02 2009-03-12 Fujifilm Corp Photosensitive composition and pattern-forming method using the same
JP4977747B2 (en) * 2009-12-10 2012-07-18 東京エレクトロン株式会社 Substrate processing method, program, computer storage medium, and substrate processing system
JP2015015291A (en) * 2013-07-03 2015-01-22 東京エレクトロン株式会社 Apparatus for processing substrate, system for processing substrate, method for processing substrate and recording medium for processing substrate
JP6293645B2 (en) 2013-12-27 2018-03-14 東京エレクトロン株式会社 Substrate processing system
JP6337757B2 (en) 2014-01-20 2018-06-06 東京エレクトロン株式会社 Exposure apparatus, resist pattern forming method, and storage medium

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10123703A (en) * 1996-10-18 1998-05-15 Fuji Photo Film Co Ltd Positive type photosensitive composition
JP2002099088A (en) * 2000-09-26 2002-04-05 Yasuhiko Shirota Radiation sensitive composition
JP4082201B2 (en) * 2002-12-12 2008-04-30 Ｊｓｒ株式会社 Radiation sensitive resin composition

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7923192B2 (en) 2004-02-20 2011-04-12 Tokyo Ohka Kogyo Co., Ltd. Base material for pattern-forming material, positive resist composition and method of resist pattern formation
US7897319B2 (en) 2004-07-28 2011-03-01 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method of forming resist pattern
US7901865B2 (en) 2004-09-08 2011-03-08 Tokyo Ohka Kogyo Co., Ltd. Resist composition and process for formation of resist patterns
US7851129B2 (en) 2004-10-29 2010-12-14 Tokyo Ohka Kogyo Co., Ltd. Resist composition, resist pattern forming method and compound
US7981588B2 (en) 2005-02-02 2011-07-19 Tokyo Ohka Kogyo Co., Ltd. Negative resist composition and method of forming resist pattern
US8206887B2 (en) 2005-05-17 2012-06-26 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and resist pattern forming method
US7862981B2 (en) 2005-06-17 2011-01-04 Tokyo Ohka Kogyo Co., Ltd. Compound, positive resist composition and method of forming resist pattern
US8389197B2 (en) 2005-07-05 2013-03-05 Tokyo Ohka Kogyo Co., Ltd. Compound, positive resist composition and resist pattern forming method

Also Published As

Publication number Publication date
WO2006027996A1 (en) 2006-03-16
TWI292085B (en) 2008-01-01
JP2006078744A (en) 2006-03-23
KR20070057211A (en) 2007-06-04

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees