TW200602818A - Composition for removing a (photo) resist - Google Patents

Composition for removing a (photo) resist

Info

Publication number
TW200602818A
TW200602818A TW094114944A TW94114944A TW200602818A TW 200602818 A TW200602818 A TW 200602818A TW 094114944 A TW094114944 A TW 094114944A TW 94114944 A TW94114944 A TW 94114944A TW 200602818 A TW200602818 A TW 200602818A
Authority
TW
Taiwan
Prior art keywords
remover composition
photoresist remover
resist
photo
composition
Prior art date
Application number
TW094114944A
Other languages
Chinese (zh)
Other versions
TWI368832B (en
Inventor
Byung-Uk Kim
Suk-Il Yoon
Seong-Bae Kim
Wy-Yong Kim
Suk-Chang Jang
Jong-Hyun Jeong
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Publication of TW200602818A publication Critical patent/TW200602818A/en
Application granted granted Critical
Publication of TWI368832B publication Critical patent/TWI368832B/en

Links

Classifications

    • D—TEXTILES; PAPER
    • D04—BRAIDING; LACE-MAKING; KNITTING; TRIMMINGS; NON-WOVEN FABRICS
    • D04H—MAKING TEXTILE FABRICS, e.g. FROM FIBRES OR FILAMENTARY MATERIAL; FABRICS MADE BY SUCH PROCESSES OR APPARATUS, e.g. FELTS, NON-WOVEN FABRICS; COTTON-WOOL; WADDING ; NON-WOVEN FABRICS FROM STAPLE FIBRES, FILAMENTS OR YARNS, BONDED WITH AT LEAST ONE WEB-LIKE MATERIAL DURING THEIR CONSOLIDATION
    • D04H13/00—Other non-woven fabrics
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D295/00—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms
    • C07D295/02—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms containing only hydrogen and carbon atoms in addition to the ring hetero elements
    • C07D295/027—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms containing only hydrogen and carbon atoms in addition to the ring hetero elements containing only one hetero ring
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D295/00—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms
    • C07D295/04—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms with substituted hydrocarbon radicals attached to ring nitrogen atoms
    • C07D295/08—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms with substituted hydrocarbon radicals attached to ring nitrogen atoms substituted by singly bound oxygen or sulfur atoms
    • C07D295/084—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms with substituted hydrocarbon radicals attached to ring nitrogen atoms substituted by singly bound oxygen or sulfur atoms with the ring nitrogen atoms and the oxygen or sulfur atoms attached to the same carbon chain, which is not interrupted by carbocyclic rings
    • C07D295/088—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms with substituted hydrocarbon radicals attached to ring nitrogen atoms substituted by singly bound oxygen or sulfur atoms with the ring nitrogen atoms and the oxygen or sulfur atoms attached to the same carbon chain, which is not interrupted by carbocyclic rings to an acyclic saturated chain

Abstract

The present invention relates to a photoresist remover composition used in making circuit or display device patterns, more particularly to a photoresist remover composition containing amine and solvent, where the amine is a cyclic amine compound. The photoresist remover composition of the present invention can easily and quickly remove a resist film and can minimize corrosion of the patterned metallic circuitry.
TW094114944A 2004-05-07 2005-05-09 Composition for removing a (photo) resist TWI368832B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040032112A KR101082018B1 (en) 2004-05-07 2004-05-07 Composition for removing a (photo)resist

Publications (2)

Publication Number Publication Date
TW200602818A true TW200602818A (en) 2006-01-16
TWI368832B TWI368832B (en) 2012-07-21

Family

ID=35320362

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094114944A TWI368832B (en) 2004-05-07 2005-05-09 Composition for removing a (photo) resist

Country Status (5)

Country Link
JP (1) JP2007536565A (en)
KR (1) KR101082018B1 (en)
CN (1) CN1950754A (en)
TW (1) TWI368832B (en)
WO (1) WO2005109107A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4902299B2 (en) * 2006-09-11 2012-03-21 三星電子株式会社 Manufacturing method of display device
JP5195063B2 (en) * 2008-06-19 2013-05-08 東ソー株式会社 Resist stripper
KR101008373B1 (en) * 2009-11-26 2011-01-13 주식회사 엘지화학 Stripper composition for photoresist and method for stripping photoresist
JP5279921B2 (en) * 2009-11-26 2013-09-04 エルジー・ケム・リミテッド Photoresist stripper composition and photoresist stripping method using the same
TWI405053B (en) * 2009-11-27 2013-08-11 Lg Chemical Ltd Stripper composition for photoresist and method for stripping photoresist
KR101679030B1 (en) * 2009-12-16 2016-11-23 주식회사 동진쎄미켐 Stripper composition of photoresist
JP5533383B2 (en) * 2010-07-15 2014-06-25 東ソー株式会社 Resist stripper and stripping method using the same
WO2014104192A1 (en) * 2012-12-27 2014-07-03 富士フイルム株式会社 Resist-removing liquid and resist-stripping method
JP6121570B2 (en) * 2013-03-07 2017-04-26 エルジー・ケム・リミテッド Stripper composition for removing photoresist and method for stripping photoresist using the same
KR101668063B1 (en) * 2013-05-07 2016-10-20 주식회사 엘지화학 Stripper composition for removing photoresist and stripping mthod of photoresist using the same
JP6231423B2 (en) * 2014-04-09 2017-11-15 東京応化工業株式会社 Stripping solution for photolithography and pattern forming method
CN112731777A (en) * 2020-12-17 2021-04-30 芯越微电子材料(嘉兴)有限公司 Photoresist stripping liquid suitable for semiconductor integrated circuit and preparation method thereof

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60131535A (en) * 1983-12-20 1985-07-13 エッチエムシー・パテンツ・ホールディング・カンパニー・インコーポレーテッド Stripping composition for positive photoresist
JP2578821B2 (en) * 1987-08-10 1997-02-05 東京応化工業株式会社 Stripper for positive photoresist
US6326130B1 (en) * 1993-10-07 2001-12-04 Mallinckrodt Baker, Inc. Photoresist strippers containing reducing agents to reduce metal corrosion
US5798323A (en) * 1997-05-05 1998-08-25 Olin Microelectronic Chemicals, Inc. Non-corrosive stripping and cleaning composition
JP2000056480A (en) * 1998-08-10 2000-02-25 Tokyo Ohka Kogyo Co Ltd Resist stripping solution composition and resist stripping method by using same
JP2000250231A (en) * 1999-03-03 2000-09-14 Nagase Denshi Kagaku Kk Photoresist remover composition and method for using same
JP4442017B2 (en) * 2000-10-11 2010-03-31 東ソー株式会社 Resist stripper
US6599370B2 (en) * 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
TW554258B (en) 2000-11-30 2003-09-21 Tosoh Corp Resist stripper
JP2002244310A (en) * 2001-02-21 2002-08-30 Tosoh Corp Resist removing agent
JP2003270801A (en) * 2002-03-13 2003-09-25 Nippon Zeon Co Ltd Resist stripping solution composition and stripping method using the same
JP4304909B2 (en) * 2002-04-03 2009-07-29 東ソー株式会社 Cleaning agent and cleaning method using the same
US6951710B2 (en) * 2003-05-23 2005-10-04 Air Products And Chemicals, Inc. Compositions suitable for removing photoresist, photoresist byproducts and etching residue, and use thereof
JP4405767B2 (en) * 2003-08-28 2010-01-27 ソニー株式会社 Composition for removing photoresist on substrate containing silver and / or silver alloy, method for producing pattern using the same, and display device including the same
US8338087B2 (en) * 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate

Also Published As

Publication number Publication date
CN1950754A (en) 2007-04-18
TWI368832B (en) 2012-07-21
KR20050106993A (en) 2005-11-11
KR101082018B1 (en) 2011-11-10
JP2007536565A (en) 2007-12-13
WO2005109107A1 (en) 2005-11-17

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