JP2013500503A5 - - Google Patents

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Publication number
JP2013500503A5
JP2013500503A5 JP2012522125A JP2012522125A JP2013500503A5 JP 2013500503 A5 JP2013500503 A5 JP 2013500503A5 JP 2012522125 A JP2012522125 A JP 2012522125A JP 2012522125 A JP2012522125 A JP 2012522125A JP 2013500503 A5 JP2013500503 A5 JP 2013500503A5
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JP
Japan
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composition
mixture
alcohol
propanol
amine
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JP2012522125A
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English (en)
Japanese (ja)
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JP6165442B2 (ja
JP2013500503A (ja
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Priority claimed from PCT/EP2010/060762 external-priority patent/WO2011012559A2/en
Publication of JP2013500503A publication Critical patent/JP2013500503A/ja
Publication of JP2013500503A5 publication Critical patent/JP2013500503A5/ja
Application granted granted Critical
Publication of JP6165442B2 publication Critical patent/JP6165442B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012522125A 2009-07-30 2010-07-26 高度な半導体応用のためのポストイオン注入フォトレジスト剥離用組成物 Expired - Fee Related JP6165442B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22976009P 2009-07-30 2009-07-30
US61/229,760 2009-07-30
PCT/EP2010/060762 WO2011012559A2 (en) 2009-07-30 2010-07-26 Post ion implant stripper for advanced semiconductor application

Publications (3)

Publication Number Publication Date
JP2013500503A JP2013500503A (ja) 2013-01-07
JP2013500503A5 true JP2013500503A5 (enExample) 2013-09-12
JP6165442B2 JP6165442B2 (ja) 2017-07-19

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ID=43137613

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012522125A Expired - Fee Related JP6165442B2 (ja) 2009-07-30 2010-07-26 高度な半導体応用のためのポストイオン注入フォトレジスト剥離用組成物

Country Status (10)

Country Link
US (1) US9484218B2 (enExample)
EP (1) EP2460177B1 (enExample)
JP (1) JP6165442B2 (enExample)
KR (1) KR101746879B1 (enExample)
CN (1) CN102473638B (enExample)
IL (1) IL217708A (enExample)
MY (1) MY185453A (enExample)
SG (2) SG177755A1 (enExample)
TW (1) TWI594088B (enExample)
WO (1) WO2011012559A2 (enExample)

Families Citing this family (18)

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US9329486B2 (en) 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US7632796B2 (en) 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
MY165866A (en) 2011-03-18 2018-05-18 Basf Se Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less
CN104093790B (zh) * 2011-11-29 2016-10-12 涂料外国Ip有限公司 非水溶剂组合物及其作为隔离液体的用途
CN104169801B (zh) 2012-03-16 2019-12-17 巴斯夫欧洲公司 光致抗蚀剂剥离和清洁组合物、其制备方法及其用途
US9158202B2 (en) 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
JP6233779B2 (ja) 2013-11-18 2017-11-22 富士フイルム株式会社 変性レジストの剥離方法、これに用いる変性レジストの剥離液および半導体基板製品の製造方法
JP2015118125A (ja) * 2013-11-18 2015-06-25 富士フイルム株式会社 変性レジストの剥離液、これを用いた変性レジストの剥離方法および半導体基板製品の製造方法
EP3089382B1 (en) 2013-12-25 2018-11-21 Huawei Marine Networks Co., Limited Optical branching unit for optical add drop multiplexing
US20150219996A1 (en) * 2014-02-06 2015-08-06 Dynaloy, Llc Composition for removing substances from substrates
WO2016084860A1 (ja) * 2014-11-27 2016-06-02 富士フイルム株式会社 除去液、これを用いた除去方法および半導体基板製品の製造方法
KR101850192B1 (ko) * 2015-12-02 2018-04-19 연세대학교 산학협력단 유기용매를 이용한 포토레지스트 제거방법
JP6536464B2 (ja) * 2016-04-26 2019-07-03 信越化学工業株式会社 洗浄剤組成物及び薄型基板の製造方法
HRP20200541T1 (hr) 2016-05-10 2020-07-10 Atotech Deutschland Gmbh Nevodenasti sastav za skidanje i postupak skidanja organskog premaza sa supstrata
KR102349076B1 (ko) * 2018-02-14 2022-01-10 메르크 파텐트 게엠베하 포토레지스트 제거제 조성물
CN116285995A (zh) * 2021-12-20 2023-06-23 李长荣化学工业股份有限公司 用于移除硅的蚀刻组成物及使用其移除硅的方法
JP7752541B2 (ja) 2022-01-21 2025-10-10 関東化学株式会社 フォトレジスト剥離組成物
JP7290195B1 (ja) * 2022-10-19 2023-06-13 Jsr株式会社 半導体処理用組成物及び処理方法

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US5091103A (en) * 1990-05-01 1992-02-25 Alicia Dean Photoresist stripper
US6825156B2 (en) * 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US5612304A (en) * 1995-07-07 1997-03-18 Olin Microelectronic Chemicals, Inc. Redox reagent-containing post-etch residue cleaning composition
US5811358A (en) 1997-01-03 1998-09-22 Mosel Vitelic Inc. Low temperature dry process for stripping photoresist after high dose ion implantation
JPH1184686A (ja) * 1997-09-01 1999-03-26 Mitsubishi Gas Chem Co Inc レジスト剥離剤組成物
US6417112B1 (en) * 1998-07-06 2002-07-09 Ekc Technology, Inc. Post etch cleaning composition and process for dual damascene system
US7135445B2 (en) * 2001-12-04 2006-11-14 Ekc Technology, Inc. Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials
KR100288769B1 (ko) 1998-07-10 2001-09-17 윤종용 포토레지스트용스트리퍼조성물
US6368421B1 (en) * 1998-07-10 2002-04-09 Clariant Finance (Bvi) Limited Composition for stripping photoresist and organic materials from substrate surfaces
JP2001215736A (ja) 2000-02-04 2001-08-10 Jsr Corp フォトレジスト用剥離液組成物、剥離方法及び回路基板
JP3738996B2 (ja) 2002-10-10 2006-01-25 東京応化工業株式会社 ホトリソグラフィー用洗浄液および基板の処理方法
US6524936B2 (en) 2000-12-22 2003-02-25 Axcelis Technologies, Inc. Process for removal of photoresist after post ion implantation
US6861210B2 (en) * 2001-05-21 2005-03-01 Dongjin Semichen Co., Ltd. Resist remover composition
JP2002357908A (ja) 2001-05-31 2002-12-13 Tokyo Ohka Kogyo Co Ltd ホトレジスト用剥離液
CN100403169C (zh) * 2001-07-13 2008-07-16 Ekc技术公司 亚砜吡咯烷酮链烷醇胺剥离和清洗组合物
US6551973B1 (en) * 2001-10-09 2003-04-22 General Chemical Corporation Stable metal-safe stripper for removing cured negative-tone novolak and acrylic photoresists and post-etch residue
JP4045408B2 (ja) * 2002-01-31 2008-02-13 三菱瓦斯化学株式会社 銅配線基板向け洗浄液およびこれを使用したレジスト剥離方法
JP2003228179A (ja) 2002-01-31 2003-08-15 Mitsubishi Gas Chem Co Inc 銅配線基板向けアミン含有レジスト剥離液および剥離方法
US20030148624A1 (en) 2002-01-31 2003-08-07 Kazuto Ikemoto Method for removing resists
US8003587B2 (en) * 2002-06-06 2011-08-23 Ekc Technology, Inc. Semiconductor process residue removal composition and process
JP2004117889A (ja) 2002-09-26 2004-04-15 Jsr Corp フォトレジスト用剥離液組成物
US20050089489A1 (en) * 2003-10-22 2005-04-28 Carter Melvin K. Composition for exfoliation agent effective in removing resist residues
EP1879704A2 (en) * 2005-04-15 2008-01-23 Advanced Technology Materials, Inc. Formulations for cleaning ion-implanted photoresist layers from microelectronic devices
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JP4678673B2 (ja) * 2005-05-12 2011-04-27 東京応化工業株式会社 ホトレジスト用剥離液
WO2007047365A2 (en) * 2005-10-13 2007-04-26 Advanced Technology Materials, Inc. Metals compatible photoresist and/or sacrificial antireflective coating removal composition
US7632796B2 (en) * 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US8263539B2 (en) * 2005-10-28 2012-09-11 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and methods for its use
US20090111726A1 (en) * 2007-10-31 2009-04-30 Shang X Cass Compounds for Photoresist Stripping
WO2010127941A1 (en) * 2009-05-07 2010-11-11 Basf Se Resist stripping compositions and methods for manufacturing electrical devices

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