TWI594088B - 用於先進半導體應用之離子植入後剝離液 - Google Patents

用於先進半導體應用之離子植入後剝離液 Download PDF

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Publication number
TWI594088B
TWI594088B TW099125180A TW99125180A TWI594088B TW I594088 B TWI594088 B TW I594088B TW 099125180 A TW099125180 A TW 099125180A TW 99125180 A TW99125180 A TW 99125180A TW I594088 B TWI594088 B TW I594088B
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TW
Taiwan
Prior art keywords
composition
photoresist
alcohol
ion implantation
substrate
Prior art date
Application number
TW099125180A
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English (en)
Chinese (zh)
Other versions
TW201128327A (en
Inventor
陳建行
沈美卿
詹嘉豪
安德利亞 克里普
Original Assignee
巴地斯顏料化工廠
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 巴地斯顏料化工廠 filed Critical 巴地斯顏料化工廠
Publication of TW201128327A publication Critical patent/TW201128327A/zh
Application granted granted Critical
Publication of TWI594088B publication Critical patent/TWI594088B/zh

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31127Etching organic layers
    • H01L21/31133Etching organic layers by chemical means
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/37Polymers
    • C11D3/3746Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C11D3/3757(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions
    • C11D3/3765(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions in liquid compositions
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW099125180A 2009-07-30 2010-07-29 用於先進半導體應用之離子植入後剝離液 TWI594088B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US22976009P 2009-07-30 2009-07-30

Publications (2)

Publication Number Publication Date
TW201128327A TW201128327A (en) 2011-08-16
TWI594088B true TWI594088B (zh) 2017-08-01

Family

ID=43137613

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099125180A TWI594088B (zh) 2009-07-30 2010-07-29 用於先進半導體應用之離子植入後剝離液

Country Status (10)

Country Link
US (1) US9484218B2 (enExample)
EP (1) EP2460177B1 (enExample)
JP (1) JP6165442B2 (enExample)
KR (1) KR101746879B1 (enExample)
CN (1) CN102473638B (enExample)
IL (1) IL217708A (enExample)
MY (1) MY185453A (enExample)
SG (2) SG177755A1 (enExample)
TW (1) TWI594088B (enExample)
WO (1) WO2011012559A2 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9329486B2 (en) 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US7632796B2 (en) 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
SG192847A1 (en) 2011-03-18 2013-09-30 Basf Se Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less
EP2785805B1 (en) 2011-11-29 2019-08-28 Axalta Coating Systems IP Co. LLC Use of a non-aqueous solvent composition as a barrier liquid
EP2825913B1 (en) 2012-03-16 2019-05-08 Basf Se Photoresist stripping and cleaning composition, method of its preparation and its use
US9158202B2 (en) 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
JP6233779B2 (ja) * 2013-11-18 2017-11-22 富士フイルム株式会社 変性レジストの剥離方法、これに用いる変性レジストの剥離液および半導体基板製品の製造方法
JP2015118125A (ja) * 2013-11-18 2015-06-25 富士フイルム株式会社 変性レジストの剥離液、これを用いた変性レジストの剥離方法および半導体基板製品の製造方法
EP3089382B1 (en) 2013-12-25 2018-11-21 Huawei Marine Networks Co., Limited Optical branching unit for optical add drop multiplexing
US20150219996A1 (en) * 2014-02-06 2015-08-06 Dynaloy, Llc Composition for removing substances from substrates
WO2016084860A1 (ja) * 2014-11-27 2016-06-02 富士フイルム株式会社 除去液、これを用いた除去方法および半導体基板製品の製造方法
KR101850192B1 (ko) * 2015-12-02 2018-04-19 연세대학교 산학협력단 유기용매를 이용한 포토레지스트 제거방법
JP6536464B2 (ja) 2016-04-26 2019-07-03 信越化学工業株式会社 洗浄剤組成物及び薄型基板の製造方法
EP3374443B1 (en) 2016-05-10 2020-01-08 ATOTECH Deutschland GmbH A non-aqueous stripping composition and a method of stripping an organic coating from a substrate
TWI768144B (zh) * 2018-02-14 2022-06-21 德商馬克專利公司 化學剝離劑組合物及移除光阻之方法
CN116285995A (zh) * 2021-12-20 2023-06-23 李长荣化学工业股份有限公司 用于移除硅的蚀刻组成物及使用其移除硅的方法
JP7752541B2 (ja) 2022-01-21 2025-10-10 関東化学株式会社 フォトレジスト剥離組成物
JP7290195B1 (ja) * 2022-10-19 2023-06-13 Jsr株式会社 半導体処理用組成物及び処理方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040147421A1 (en) * 2001-12-04 2004-07-29 Charm Richard William Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5091103A (en) * 1990-05-01 1992-02-25 Alicia Dean Photoresist stripper
US6825156B2 (en) * 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US5612304A (en) * 1995-07-07 1997-03-18 Olin Microelectronic Chemicals, Inc. Redox reagent-containing post-etch residue cleaning composition
US5811358A (en) 1997-01-03 1998-09-22 Mosel Vitelic Inc. Low temperature dry process for stripping photoresist after high dose ion implantation
JPH1184686A (ja) * 1997-09-01 1999-03-26 Mitsubishi Gas Chem Co Inc レジスト剥離剤組成物
US6417112B1 (en) * 1998-07-06 2002-07-09 Ekc Technology, Inc. Post etch cleaning composition and process for dual damascene system
US6368421B1 (en) * 1998-07-10 2002-04-09 Clariant Finance (Bvi) Limited Composition for stripping photoresist and organic materials from substrate surfaces
KR100288769B1 (ko) 1998-07-10 2001-09-17 윤종용 포토레지스트용스트리퍼조성물
JP2001215736A (ja) 2000-02-04 2001-08-10 Jsr Corp フォトレジスト用剥離液組成物、剥離方法及び回路基板
JP3738996B2 (ja) 2002-10-10 2006-01-25 東京応化工業株式会社 ホトリソグラフィー用洗浄液および基板の処理方法
US6524936B2 (en) 2000-12-22 2003-02-25 Axcelis Technologies, Inc. Process for removal of photoresist after post ion implantation
CN1238770C (zh) * 2001-05-21 2006-01-25 东进瑟弥侃株式会社 抗蚀剂剥离剂组合物
JP2002357908A (ja) 2001-05-31 2002-12-13 Tokyo Ohka Kogyo Co Ltd ホトレジスト用剥離液
US6916772B2 (en) * 2001-07-13 2005-07-12 Ekc Technology, Inc. Sulfoxide pyrolid(in)one alkanolamine cleaner composition
US6551973B1 (en) * 2001-10-09 2003-04-22 General Chemical Corporation Stable metal-safe stripper for removing cured negative-tone novolak and acrylic photoresists and post-etch residue
JP4045408B2 (ja) 2002-01-31 2008-02-13 三菱瓦斯化学株式会社 銅配線基板向け洗浄液およびこれを使用したレジスト剥離方法
JP2003228179A (ja) 2002-01-31 2003-08-15 Mitsubishi Gas Chem Co Inc 銅配線基板向けアミン含有レジスト剥離液および剥離方法
US20030148624A1 (en) 2002-01-31 2003-08-07 Kazuto Ikemoto Method for removing resists
US8003587B2 (en) * 2002-06-06 2011-08-23 Ekc Technology, Inc. Semiconductor process residue removal composition and process
JP2004117889A (ja) 2002-09-26 2004-04-15 Jsr Corp フォトレジスト用剥離液組成物
US20050089489A1 (en) * 2003-10-22 2005-04-28 Carter Melvin K. Composition for exfoliation agent effective in removing resist residues
WO2006113222A2 (en) * 2005-04-15 2006-10-26 Advanced Technology Materials, Inc. Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systems
US8114220B2 (en) * 2005-04-15 2012-02-14 Advanced Technology Materials, Inc. Formulations for cleaning ion-implanted photoresist layers from microelectronic devices
JP4678673B2 (ja) * 2005-05-12 2011-04-27 東京応化工業株式会社 ホトレジスト用剥離液
WO2007047365A2 (en) * 2005-10-13 2007-04-26 Advanced Technology Materials, Inc. Metals compatible photoresist and/or sacrificial antireflective coating removal composition
US7632796B2 (en) 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US8263539B2 (en) * 2005-10-28 2012-09-11 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and methods for its use
EP2206140A2 (en) * 2007-10-31 2010-07-14 EKC Technology, INC. Compounds for photoresist stripping
WO2010127941A1 (en) * 2009-05-07 2010-11-11 Basf Se Resist stripping compositions and methods for manufacturing electrical devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040147421A1 (en) * 2001-12-04 2004-07-29 Charm Richard William Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials

Also Published As

Publication number Publication date
MY185453A (en) 2021-05-19
WO2011012559A2 (en) 2011-02-03
CN102473638B (zh) 2015-02-18
IL217708A0 (en) 2012-03-29
EP2460177B1 (en) 2016-03-23
SG10201404328QA (en) 2014-10-30
RU2012107135A (ru) 2013-09-10
KR20120041777A (ko) 2012-05-02
JP2013500503A (ja) 2013-01-07
TW201128327A (en) 2011-08-16
JP6165442B2 (ja) 2017-07-19
EP2460177A2 (en) 2012-06-06
IL217708A (en) 2017-07-31
US20120129747A1 (en) 2012-05-24
US9484218B2 (en) 2016-11-01
SG177755A1 (en) 2012-03-29
WO2011012559A3 (en) 2011-03-24
KR101746879B1 (ko) 2017-06-14
CN102473638A (zh) 2012-05-23

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