TWI594088B - 用於先進半導體應用之離子植入後剝離液 - Google Patents
用於先進半導體應用之離子植入後剝離液 Download PDFInfo
- Publication number
- TWI594088B TWI594088B TW099125180A TW99125180A TWI594088B TW I594088 B TWI594088 B TW I594088B TW 099125180 A TW099125180 A TW 099125180A TW 99125180 A TW99125180 A TW 99125180A TW I594088 B TWI594088 B TW I594088B
- Authority
- TW
- Taiwan
- Prior art keywords
- composition
- photoresist
- alcohol
- ion implantation
- substrate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3757—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions
- C11D3/3765—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions in liquid compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22976009P | 2009-07-30 | 2009-07-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201128327A TW201128327A (en) | 2011-08-16 |
| TWI594088B true TWI594088B (zh) | 2017-08-01 |
Family
ID=43137613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099125180A TWI594088B (zh) | 2009-07-30 | 2010-07-29 | 用於先進半導體應用之離子植入後剝離液 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US9484218B2 (enExample) |
| EP (1) | EP2460177B1 (enExample) |
| JP (1) | JP6165442B2 (enExample) |
| KR (1) | KR101746879B1 (enExample) |
| CN (1) | CN102473638B (enExample) |
| IL (1) | IL217708A (enExample) |
| MY (1) | MY185453A (enExample) |
| SG (2) | SG177755A1 (enExample) |
| TW (1) | TWI594088B (enExample) |
| WO (1) | WO2011012559A2 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9329486B2 (en) | 2005-10-28 | 2016-05-03 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
| US7632796B2 (en) | 2005-10-28 | 2009-12-15 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
| SG192847A1 (en) | 2011-03-18 | 2013-09-30 | Basf Se | Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less |
| EP2785805B1 (en) | 2011-11-29 | 2019-08-28 | Axalta Coating Systems IP Co. LLC | Use of a non-aqueous solvent composition as a barrier liquid |
| EP2825913B1 (en) | 2012-03-16 | 2019-05-08 | Basf Se | Photoresist stripping and cleaning composition, method of its preparation and its use |
| US9158202B2 (en) | 2012-11-21 | 2015-10-13 | Dynaloy, Llc | Process and composition for removing substances from substrates |
| JP6233779B2 (ja) * | 2013-11-18 | 2017-11-22 | 富士フイルム株式会社 | 変性レジストの剥離方法、これに用いる変性レジストの剥離液および半導体基板製品の製造方法 |
| JP2015118125A (ja) * | 2013-11-18 | 2015-06-25 | 富士フイルム株式会社 | 変性レジストの剥離液、これを用いた変性レジストの剥離方法および半導体基板製品の製造方法 |
| EP3089382B1 (en) | 2013-12-25 | 2018-11-21 | Huawei Marine Networks Co., Limited | Optical branching unit for optical add drop multiplexing |
| US20150219996A1 (en) * | 2014-02-06 | 2015-08-06 | Dynaloy, Llc | Composition for removing substances from substrates |
| WO2016084860A1 (ja) * | 2014-11-27 | 2016-06-02 | 富士フイルム株式会社 | 除去液、これを用いた除去方法および半導体基板製品の製造方法 |
| KR101850192B1 (ko) * | 2015-12-02 | 2018-04-19 | 연세대학교 산학협력단 | 유기용매를 이용한 포토레지스트 제거방법 |
| JP6536464B2 (ja) | 2016-04-26 | 2019-07-03 | 信越化学工業株式会社 | 洗浄剤組成物及び薄型基板の製造方法 |
| EP3374443B1 (en) | 2016-05-10 | 2020-01-08 | ATOTECH Deutschland GmbH | A non-aqueous stripping composition and a method of stripping an organic coating from a substrate |
| TWI768144B (zh) * | 2018-02-14 | 2022-06-21 | 德商馬克專利公司 | 化學剝離劑組合物及移除光阻之方法 |
| CN116285995A (zh) * | 2021-12-20 | 2023-06-23 | 李长荣化学工业股份有限公司 | 用于移除硅的蚀刻组成物及使用其移除硅的方法 |
| JP7752541B2 (ja) | 2022-01-21 | 2025-10-10 | 関東化学株式会社 | フォトレジスト剥離組成物 |
| JP7290195B1 (ja) * | 2022-10-19 | 2023-06-13 | Jsr株式会社 | 半導体処理用組成物及び処理方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040147421A1 (en) * | 2001-12-04 | 2004-07-29 | Charm Richard William | Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5091103A (en) * | 1990-05-01 | 1992-02-25 | Alicia Dean | Photoresist stripper |
| US6825156B2 (en) * | 2002-06-06 | 2004-11-30 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
| US5612304A (en) * | 1995-07-07 | 1997-03-18 | Olin Microelectronic Chemicals, Inc. | Redox reagent-containing post-etch residue cleaning composition |
| US5811358A (en) | 1997-01-03 | 1998-09-22 | Mosel Vitelic Inc. | Low temperature dry process for stripping photoresist after high dose ion implantation |
| JPH1184686A (ja) * | 1997-09-01 | 1999-03-26 | Mitsubishi Gas Chem Co Inc | レジスト剥離剤組成物 |
| US6417112B1 (en) * | 1998-07-06 | 2002-07-09 | Ekc Technology, Inc. | Post etch cleaning composition and process for dual damascene system |
| US6368421B1 (en) * | 1998-07-10 | 2002-04-09 | Clariant Finance (Bvi) Limited | Composition for stripping photoresist and organic materials from substrate surfaces |
| KR100288769B1 (ko) | 1998-07-10 | 2001-09-17 | 윤종용 | 포토레지스트용스트리퍼조성물 |
| JP2001215736A (ja) | 2000-02-04 | 2001-08-10 | Jsr Corp | フォトレジスト用剥離液組成物、剥離方法及び回路基板 |
| JP3738996B2 (ja) | 2002-10-10 | 2006-01-25 | 東京応化工業株式会社 | ホトリソグラフィー用洗浄液および基板の処理方法 |
| US6524936B2 (en) | 2000-12-22 | 2003-02-25 | Axcelis Technologies, Inc. | Process for removal of photoresist after post ion implantation |
| CN1238770C (zh) * | 2001-05-21 | 2006-01-25 | 东进瑟弥侃株式会社 | 抗蚀剂剥离剂组合物 |
| JP2002357908A (ja) | 2001-05-31 | 2002-12-13 | Tokyo Ohka Kogyo Co Ltd | ホトレジスト用剥離液 |
| US6916772B2 (en) * | 2001-07-13 | 2005-07-12 | Ekc Technology, Inc. | Sulfoxide pyrolid(in)one alkanolamine cleaner composition |
| US6551973B1 (en) * | 2001-10-09 | 2003-04-22 | General Chemical Corporation | Stable metal-safe stripper for removing cured negative-tone novolak and acrylic photoresists and post-etch residue |
| JP4045408B2 (ja) | 2002-01-31 | 2008-02-13 | 三菱瓦斯化学株式会社 | 銅配線基板向け洗浄液およびこれを使用したレジスト剥離方法 |
| JP2003228179A (ja) | 2002-01-31 | 2003-08-15 | Mitsubishi Gas Chem Co Inc | 銅配線基板向けアミン含有レジスト剥離液および剥離方法 |
| US20030148624A1 (en) | 2002-01-31 | 2003-08-07 | Kazuto Ikemoto | Method for removing resists |
| US8003587B2 (en) * | 2002-06-06 | 2011-08-23 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
| JP2004117889A (ja) | 2002-09-26 | 2004-04-15 | Jsr Corp | フォトレジスト用剥離液組成物 |
| US20050089489A1 (en) * | 2003-10-22 | 2005-04-28 | Carter Melvin K. | Composition for exfoliation agent effective in removing resist residues |
| WO2006113222A2 (en) * | 2005-04-15 | 2006-10-26 | Advanced Technology Materials, Inc. | Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systems |
| US8114220B2 (en) * | 2005-04-15 | 2012-02-14 | Advanced Technology Materials, Inc. | Formulations for cleaning ion-implanted photoresist layers from microelectronic devices |
| JP4678673B2 (ja) * | 2005-05-12 | 2011-04-27 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
| WO2007047365A2 (en) * | 2005-10-13 | 2007-04-26 | Advanced Technology Materials, Inc. | Metals compatible photoresist and/or sacrificial antireflective coating removal composition |
| US7632796B2 (en) | 2005-10-28 | 2009-12-15 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
| US8263539B2 (en) * | 2005-10-28 | 2012-09-11 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and methods for its use |
| EP2206140A2 (en) * | 2007-10-31 | 2010-07-14 | EKC Technology, INC. | Compounds for photoresist stripping |
| WO2010127941A1 (en) * | 2009-05-07 | 2010-11-11 | Basf Se | Resist stripping compositions and methods for manufacturing electrical devices |
-
2010
- 2010-07-26 JP JP2012522125A patent/JP6165442B2/ja not_active Expired - Fee Related
- 2010-07-26 CN CN201080033645.5A patent/CN102473638B/zh active Active
- 2010-07-26 WO PCT/EP2010/060762 patent/WO2011012559A2/en not_active Ceased
- 2010-07-26 KR KR1020127005545A patent/KR101746879B1/ko active Active
- 2010-07-26 EP EP10736715.3A patent/EP2460177B1/en active Active
- 2010-07-26 US US13/387,787 patent/US9484218B2/en active Active
- 2010-07-26 MY MYPI2012000352A patent/MY185453A/en unknown
- 2010-07-26 SG SG2012005443A patent/SG177755A1/en unknown
- 2010-07-26 SG SG10201404328QA patent/SG10201404328QA/en unknown
- 2010-07-29 TW TW099125180A patent/TWI594088B/zh active
-
2012
- 2012-01-24 IL IL217708A patent/IL217708A/en active IP Right Grant
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040147421A1 (en) * | 2001-12-04 | 2004-07-29 | Charm Richard William | Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials |
Also Published As
| Publication number | Publication date |
|---|---|
| MY185453A (en) | 2021-05-19 |
| WO2011012559A2 (en) | 2011-02-03 |
| CN102473638B (zh) | 2015-02-18 |
| IL217708A0 (en) | 2012-03-29 |
| EP2460177B1 (en) | 2016-03-23 |
| SG10201404328QA (en) | 2014-10-30 |
| RU2012107135A (ru) | 2013-09-10 |
| KR20120041777A (ko) | 2012-05-02 |
| JP2013500503A (ja) | 2013-01-07 |
| TW201128327A (en) | 2011-08-16 |
| JP6165442B2 (ja) | 2017-07-19 |
| EP2460177A2 (en) | 2012-06-06 |
| IL217708A (en) | 2017-07-31 |
| US20120129747A1 (en) | 2012-05-24 |
| US9484218B2 (en) | 2016-11-01 |
| SG177755A1 (en) | 2012-03-29 |
| WO2011012559A3 (en) | 2011-03-24 |
| KR101746879B1 (ko) | 2017-06-14 |
| CN102473638A (zh) | 2012-05-23 |
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