JP6165442B2 - 高度な半導体応用のためのポストイオン注入フォトレジスト剥離用組成物 - Google Patents

高度な半導体応用のためのポストイオン注入フォトレジスト剥離用組成物 Download PDF

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Publication number
JP6165442B2
JP6165442B2 JP2012522125A JP2012522125A JP6165442B2 JP 6165442 B2 JP6165442 B2 JP 6165442B2 JP 2012522125 A JP2012522125 A JP 2012522125A JP 2012522125 A JP2012522125 A JP 2012522125A JP 6165442 B2 JP6165442 B2 JP 6165442B2
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Japan
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composition
photoresist
solvent
substrate
stripping
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Expired - Fee Related
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Japanese (ja)
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JP2013500503A5 (enExample
JP2013500503A (ja
Inventor
チェン，チエンシン
シェン，メイチン
チャン，チアハオ
クリップ，アンドレアス
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BASF SE
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BASF SE
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/37—Polymers
    • C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C11D3/3757—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions
    • C11D3/3765—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions in liquid compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2012522125A 2009-07-30 2010-07-26 高度な半導体応用のためのポストイオン注入フォトレジスト剥離用組成物 Expired - Fee Related JP6165442B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22976009P 2009-07-30 2009-07-30
US61/229,760 2009-07-30
PCT/EP2010/060762 WO2011012559A2 (en) 2009-07-30 2010-07-26 Post ion implant stripper for advanced semiconductor application

Publications (3)

Publication Number Publication Date
JP2013500503A JP2013500503A (ja) 2013-01-07
JP2013500503A5 JP2013500503A5 (enExample) 2013-09-12
JP6165442B2 true JP6165442B2 (ja) 2017-07-19

Family

ID=43137613

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012522125A Expired - Fee Related JP6165442B2 (ja) 2009-07-30 2010-07-26 高度な半導体応用のためのポストイオン注入フォトレジスト剥離用組成物

Country Status (10)

Country Link
US (1) US9484218B2 (enExample)
EP (1) EP2460177B1 (enExample)
JP (1) JP6165442B2 (enExample)
KR (1) KR101746879B1 (enExample)
CN (1) CN102473638B (enExample)
IL (1) IL217708A (enExample)
MY (1) MY185453A (enExample)
SG (2) SG177755A1 (enExample)
TW (1) TWI594088B (enExample)
WO (1) WO2011012559A2 (enExample)

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US9329486B2 (en) 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US7632796B2 (en) 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
MY165866A (en) 2011-03-18 2018-05-18 Basf Se Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less
CN104093790B (zh) * 2011-11-29 2016-10-12 涂料外国Ip有限公司 非水溶剂组合物及其作为隔离液体的用途
CN104169801B (zh) 2012-03-16 2019-12-17 巴斯夫欧洲公司 光致抗蚀剂剥离和清洁组合物、其制备方法及其用途
US9158202B2 (en) 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
JP6233779B2 (ja) 2013-11-18 2017-11-22 富士フイルム株式会社 変性レジストの剥離方法、これに用いる変性レジストの剥離液および半導体基板製品の製造方法
JP2015118125A (ja) * 2013-11-18 2015-06-25 富士フイルム株式会社 変性レジストの剥離液、これを用いた変性レジストの剥離方法および半導体基板製品の製造方法
EP3089382B1 (en) 2013-12-25 2018-11-21 Huawei Marine Networks Co., Limited Optical branching unit for optical add drop multiplexing
US20150219996A1 (en) * 2014-02-06 2015-08-06 Dynaloy, Llc Composition for removing substances from substrates
WO2016084860A1 (ja) * 2014-11-27 2016-06-02 富士フイルム株式会社 除去液、これを用いた除去方法および半導体基板製品の製造方法
KR101850192B1 (ko) * 2015-12-02 2018-04-19 연세대학교 산학협력단 유기용매를 이용한 포토레지스트 제거방법
JP6536464B2 (ja) * 2016-04-26 2019-07-03 信越化学工業株式会社 洗浄剤組成物及び薄型基板の製造方法
HRP20200541T1 (hr) 2016-05-10 2020-07-10 Atotech Deutschland Gmbh Nevodenasti sastav za skidanje i postupak skidanja organskog premaza sa supstrata
KR102349076B1 (ko) * 2018-02-14 2022-01-10 메르크 파텐트 게엠베하 포토레지스트 제거제 조성물
CN116285995A (zh) * 2021-12-20 2023-06-23 李长荣化学工业股份有限公司 用于移除硅的蚀刻组成物及使用其移除硅的方法
JP7752541B2 (ja) 2022-01-21 2025-10-10 関東化学株式会社 フォトレジスト剥離組成物
JP7290195B1 (ja) * 2022-10-19 2023-06-13 Jsr株式会社 半導体処理用組成物及び処理方法

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US5091103A (en) * 1990-05-01 1992-02-25 Alicia Dean Photoresist stripper
US6825156B2 (en) * 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US5612304A (en) * 1995-07-07 1997-03-18 Olin Microelectronic Chemicals, Inc. Redox reagent-containing post-etch residue cleaning composition
US5811358A (en) 1997-01-03 1998-09-22 Mosel Vitelic Inc. Low temperature dry process for stripping photoresist after high dose ion implantation
JPH1184686A (ja) * 1997-09-01 1999-03-26 Mitsubishi Gas Chem Co Inc レジスト剥離剤組成物
US6417112B1 (en) * 1998-07-06 2002-07-09 Ekc Technology, Inc. Post etch cleaning composition and process for dual damascene system
US7135445B2 (en) * 2001-12-04 2006-11-14 Ekc Technology, Inc. Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials
KR100288769B1 (ko) 1998-07-10 2001-09-17 윤종용 포토레지스트용스트리퍼조성물
US6368421B1 (en) * 1998-07-10 2002-04-09 Clariant Finance (Bvi) Limited Composition for stripping photoresist and organic materials from substrate surfaces
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US6861210B2 (en) * 2001-05-21 2005-03-01 Dongjin Semichen Co., Ltd. Resist remover composition
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US6551973B1 (en) * 2001-10-09 2003-04-22 General Chemical Corporation Stable metal-safe stripper for removing cured negative-tone novolak and acrylic photoresists and post-etch residue
JP4045408B2 (ja) * 2002-01-31 2008-02-13 三菱瓦斯化学株式会社 銅配線基板向け洗浄液およびこれを使用したレジスト剥離方法
JP2003228179A (ja) 2002-01-31 2003-08-15 Mitsubishi Gas Chem Co Inc 銅配線基板向けアミン含有レジスト剥離液および剥離方法
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US8003587B2 (en) * 2002-06-06 2011-08-23 Ekc Technology, Inc. Semiconductor process residue removal composition and process
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JP2008538013A (ja) * 2005-04-15 2008-10-02 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 溶媒系中の自己組織化単分子膜を用いた高線量イオン注入フォトレジストの除去
JP4678673B2 (ja) * 2005-05-12 2011-04-27 東京応化工業株式会社 ホトレジスト用剥離液
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Also Published As

Publication number Publication date
WO2011012559A3 (en) 2011-03-24
IL217708A0 (en) 2012-03-29
RU2012107135A (ru) 2013-09-10
IL217708A (en) 2017-07-31
TW201128327A (en) 2011-08-16
TWI594088B (zh) 2017-08-01
KR20120041777A (ko) 2012-05-02
SG10201404328QA (en) 2014-10-30
CN102473638A (zh) 2012-05-23
WO2011012559A2 (en) 2011-02-03
CN102473638B (zh) 2015-02-18
US20120129747A1 (en) 2012-05-24
US9484218B2 (en) 2016-11-01
KR101746879B1 (ko) 2017-06-14
MY185453A (en) 2021-05-19
SG177755A1 (en) 2012-03-29
JP2013500503A (ja) 2013-01-07
EP2460177A2 (en) 2012-06-06
EP2460177B1 (en) 2016-03-23

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