TWI594088B - 用於先進半導體應用之離子植入後剝離液 - Google Patents
用於先進半導體應用之離子植入後剝離液 Download PDFInfo
- Publication number
- TWI594088B TWI594088B TW099125180A TW99125180A TWI594088B TW I594088 B TWI594088 B TW I594088B TW 099125180 A TW099125180 A TW 099125180A TW 99125180 A TW99125180 A TW 99125180A TW I594088 B TWI594088 B TW I594088B
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- Prior art keywords
- composition
- photoresist
- alcohol
- substrate
- propanol
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title description 5
- 239000007943 implant Substances 0.000 title 1
- 239000000203 mixture Substances 0.000 claims description 46
- 229920002120 photoresistant polymer Polymers 0.000 claims description 46
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 27
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 24
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical group [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 24
- 239000006184 cosolvent Substances 0.000 claims description 21
- 238000005468 ion implantation Methods 0.000 claims description 20
- 150000001412 amines Chemical class 0.000 claims description 18
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 15
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 claims description 13
- 238000012545 processing Methods 0.000 claims description 13
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 11
- 239000003960 organic solvent Substances 0.000 claims description 11
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims description 10
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 claims description 10
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 10
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 8
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 claims description 8
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 8
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 claims description 7
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 7
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 6
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 6
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 claims description 6
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 6
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 claims description 6
- 235000013772 propylene glycol Nutrition 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 claims description 5
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 claims description 5
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 claims description 4
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 claims description 4
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 4
- BBMCTIGTTCKYKF-UHFFFAOYSA-N 1-heptanol Chemical compound CCCCCCCO BBMCTIGTTCKYKF-UHFFFAOYSA-N 0.000 claims description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 4
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 claims description 4
- KDSNLYIMUZNERS-UHFFFAOYSA-N 2-methylpropanamine Chemical compound CC(C)CN KDSNLYIMUZNERS-UHFFFAOYSA-N 0.000 claims description 4
- JJYPMNFTHPTTDI-UHFFFAOYSA-N 3-methylaniline Chemical compound CC1=CC=CC(N)=C1 JJYPMNFTHPTTDI-UHFFFAOYSA-N 0.000 claims description 4
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 claims description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 4
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 4
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 claims description 4
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 4
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 claims description 4
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 claims description 4
- PHTQWCKDNZKARW-UHFFFAOYSA-N isoamylol Chemical compound CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 claims description 4
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 claims description 4
- JMMWKPVZQRWMSS-UHFFFAOYSA-N isopropanol acetate Natural products CC(C)OC(C)=O JMMWKPVZQRWMSS-UHFFFAOYSA-N 0.000 claims description 4
- 229940011051 isopropyl acetate Drugs 0.000 claims description 4
- RNVCVTLRINQCPJ-UHFFFAOYSA-N o-toluidine Chemical compound CC1=CC=CC=C1N RNVCVTLRINQCPJ-UHFFFAOYSA-N 0.000 claims description 4
- QNGNSVIICDLXHT-UHFFFAOYSA-N para-ethylbenzaldehyde Natural products CCC1=CC=C(C=O)C=C1 QNGNSVIICDLXHT-UHFFFAOYSA-N 0.000 claims description 4
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 claims description 4
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 claims description 4
- IIYFAKIEWZDVMP-UHFFFAOYSA-N tridecane Chemical compound CCCCCCCCCCCCC IIYFAKIEWZDVMP-UHFFFAOYSA-N 0.000 claims description 4
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 claims description 4
- ODCMOZLVFHHLMY-UHFFFAOYSA-N 1-(2-hydroxyethoxy)hexan-2-ol Chemical compound CCCCC(O)COCCO ODCMOZLVFHHLMY-UHFFFAOYSA-N 0.000 claims description 3
- AHVYPIQETPWLSZ-UHFFFAOYSA-N N-methyl-pyrrolidine Natural products CN1CC=CC1 AHVYPIQETPWLSZ-UHFFFAOYSA-N 0.000 claims description 3
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 3
- FVCOIAYSJZGECG-UHFFFAOYSA-N diethylhydroxylamine Chemical compound CCN(O)CC FVCOIAYSJZGECG-UHFFFAOYSA-N 0.000 claims description 3
- DNIAPMSPPWPWGF-VKHMYHEASA-N (+)-propylene glycol Chemical compound C[C@H](O)CO DNIAPMSPPWPWGF-VKHMYHEASA-N 0.000 claims description 2
- YPFDHNVEDLHUCE-UHFFFAOYSA-N 1,3-propanediol Substances OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 claims description 2
- AKCRQHGQIJBRMN-UHFFFAOYSA-N 2-chloroaniline Chemical compound NC1=CC=CC=C1Cl AKCRQHGQIJBRMN-UHFFFAOYSA-N 0.000 claims description 2
- PNPCRKVUWYDDST-UHFFFAOYSA-N 3-chloroaniline Chemical compound NC1=CC=CC(Cl)=C1 PNPCRKVUWYDDST-UHFFFAOYSA-N 0.000 claims description 2
- 229920001174 Diethylhydroxylamine Polymers 0.000 claims description 2
- JGFZNNIVVJXRND-UHFFFAOYSA-N N,N-Diisopropylethylamine (DIPEA) Chemical compound CCN(C(C)C)C(C)C JGFZNNIVVJXRND-UHFFFAOYSA-N 0.000 claims description 2
- AFBPFSWMIHJQDM-UHFFFAOYSA-N N-methylaniline Chemical compound CNC1=CC=CC=C1 AFBPFSWMIHJQDM-UHFFFAOYSA-N 0.000 claims description 2
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 claims description 2
- 235000011187 glycerol Nutrition 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 2
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 claims description 2
- 229920000166 polytrimethylene carbonate Polymers 0.000 claims description 2
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 2
- GWYFCOCPABKNJV-UHFFFAOYSA-N isovaleric acid Chemical compound CC(C)CC(O)=O GWYFCOCPABKNJV-UHFFFAOYSA-N 0.000 claims 2
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 claims 1
- 150000001413 amino acids Chemical class 0.000 claims 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 claims 1
- 229960001231 choline Drugs 0.000 claims 1
- LIWAQLJGPBVORC-UHFFFAOYSA-N ethylmethylamine Chemical compound CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 claims 1
- 229940035429 isobutyl alcohol Drugs 0.000 claims 1
- 239000002904 solvent Substances 0.000 description 15
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 3
- 239000000908 ammonium hydroxide Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241000252506 Characiformes Species 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- -1 alkyl hydrazine Chemical compound 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 239000002738 chelating agent Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GWYFCOCPABKNJV-UHFFFAOYSA-M isovalerate Chemical compound CC(C)CC([O-])=O GWYFCOCPABKNJV-UHFFFAOYSA-M 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 2
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 1
- RHUYHJGZWVXEHW-UHFFFAOYSA-N 1,1-Dimethyhydrazine Chemical compound CN(C)N RHUYHJGZWVXEHW-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 235000019445 benzyl alcohol Nutrition 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- CDQSJQSWAWPGKG-UHFFFAOYSA-N butane-1,1-diol Chemical compound CCCC(O)O CDQSJQSWAWPGKG-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- HQFQTTNMBUPQAY-UHFFFAOYSA-N cyclobutylhydrazine Chemical compound NNC1CCC1 HQFQTTNMBUPQAY-UHFFFAOYSA-N 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical compound CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 239000012972 dimethylethanolamine Substances 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine Substances NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000004679 hydroxides Chemical group 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical class CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 150000003138 primary alcohols Chemical class 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000003333 secondary alcohols Chemical class 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 150000003509 tertiary alcohols Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3757—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions
- C11D3/3765—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions in liquid compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
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Description
本發明係關於一種用於光阻劑剝離之組合物。特定言之,本發明係關於一種用於離子植入後光阻劑剝離之組合物。
離子植入係一製造半導體裝置之關鍵製程。諸如硼、磷或砷之摻雜離子係產自高純度氣體源並植入半導體基板中。各摻雜原子形成一電荷載子、電洞或電子,及因此改變於其附近之半導體裝置之導電性。離子植入常應用於源/汲接面及通道以獲得待製造之裝置之所需電學特性。
於典型離子植入方法中,首先令基板(例如,矽晶圓)經有機化學預處理及隨後將正色調光阻劑塗覆於該基板上。於熱烘烤、邊緣球狀物移除、曝露、顯影及旋轉乾燥步驟後,形成有機光阻遮罩。於離子植入方法期間,摻雜物滲入基板之曝露(未遮罩)表面及光阻遮罩中。摻雜物可與光阻遮罩反應以形成相對無孔層,其統稱為「外殼」。離子植入方法完成後,藉由剝離方法移除光阻遮罩。典型離子植入後剝離係實施如下:乾式電漿灰化,接著濕式比瑞合(piranha)清洗(其將硫酸與過氧化氫之混合物用作清洗劑)及馬朗戈尼(marangoni)乾燥。儘管以上方法廣泛地用於半導體工業中,然而已發現一些缺陷,如長加工時間及對矽基板之破壞。當臨界尺寸縮小至45 nm及更小時,如矽損失之矽基板破壞已成為主要問題。大於30 之矽損失會導致非所欲之摻雜物外擴散並導致裝置故障。由於此等原因,用於離子植入後剝離處理之典型方法不再被接受及需求一種新穎方法。
用於在離子植入處理後移除光阻劑之各種方法係描述於先前技藝中。例如,由Hallock等人發表之美國專利案第6,524,936號揭示一種將晶圓曝露於200 nm至400 nm及至少100 mJ/cm2之UV輻射下,然後進行習知濕式或乾式剝離處理之方法。於Tseng等人發表之美國專利案第5,811,358號中,揭示一種三步製程。首先藉由氧氣及氮氣/氫氣電漿於低溫(<220℃)下剝離基板以盡可能弱化光阻劑溶劑間歇振盪問題。隨後,採用較高溫度(>220℃)以移除剩餘的光阻劑。最後,以氫氧化銨及過氧化氫之混合物清洗基板。然而,上述方法仍存在不合人意的矽損失。
光阻劑剝離組合物係揭示於許多先前技術中。例如,Moore發表之美國專利案第6,551,973號揭示一種剝離組合物,其包含苄基-三甲基氫氧化銨(BTMAH)及包含烷基亞碸及視需要二醇共溶劑之溶劑系統、腐蝕抑制劑及用於將聚合有機物質自金屬化無機基板移除之非離子型表面活性劑。於Phenis等人之美國公開案第2007/0099805號中,揭示一種包含二甲亞碸及氫氧化四級胺及烷醇胺之剝離溶液。然而,採用習知剝離組合物以於離子植入,尤其大劑量離子植入後移除光阻劑之嘗試總是失敗,係因光阻劑於離子植入後變得無孔隙並形成外殼。此無孔外殼會阻止濕化學物質滲入光阻劑之內部及因此顯著減小濕化學物質與光阻劑之間的接觸面積。此外,外殼部分高度不均勻及因此濕式清洗之處理難度增加。因此,藉由習知濕化學物質之離子植入後剝離不符合實際。
本發明之一目的係提供一種可用於在離子植入處理後移除光阻劑之實質上無水之光阻劑剝離組合物。本發明之組合物包含:
(a)胺
(b)有機溶劑A,及
(c)共溶劑,
其中該組合物實質上無水。
於本發明之一較佳實施例中,該胺係氫氧化四級銨。
於本發明之一更佳實施例中,該胺係苄基-三甲基氫氧化銨(BTMAH)。
於本發明之另一更佳實施例中,該胺係四甲基氫氧化銨(TMAH)。
本發明之另一目的係提供一種用於離子植入後剝離之方法。該方法包含步驟:
(a)提供一覆蓋有植入光阻劑之基板,及
(b)令該基板與本發明之組合物接觸足以將光阻劑自基板移除之時間。
本發明之第一目的係提供一種可於離子植入後將光阻劑自基板移除之光阻劑剝離組合物。本發明之剝離組合物包含:
(a)胺
(b)有機溶劑A,及
(c)共溶劑,
其中該組合物實質上無水。
於本發明之組合物中之胺可分解固化光阻劑之聚合框架並剝離固化光阻劑之片段。
於本發明之組合物中可使用任何適宜的一級、二級、三級或四級胺。適宜的一級胺包括,但非限於,乙醇胺(MEA)、N-甲基乙醇胺(NMEA)、環己胺及羥胺(HA)。適宜的二級胺包括,但非限於,二乙基羥胺、二乙胺及喹啉。適宜的三級胺包括,但非限於,二甲基乙醇胺及三甲胺。適宜的四級胺包括,但非限於,四甲基氫氧化銨(TMAH)、苄基三甲基氫氧化銨(BTMAH)、四乙基氫氧化銨(TEAH)及四丁基氫氧化銨(TBAH)。
較佳胺係氫氧化四級銨。於氫氧化四級銨中,BTMAH及TMAH出乎意料地有效及因此為最佳。
本發明之組合物中胺之量可介於1至10重量%,較佳1至4重量%之間。
本發明之有機溶劑A及共溶劑之用途不同。本發明之有機溶劑A可藉由圖2中所示之(X)之剝離及切割機理將光阻劑自基板移除。無需共溶劑而單獨使用溶劑A可將光阻劑自基板剝離,然而剝離溶液隨後會因光阻劑片段懸浮於溶液中而變渾濁。光阻劑片段會降低剝離組合物之負載能力並污染基板及設備。
另一方面,本發明之共溶劑無法較有效地將光阻劑自基板剝離,但可溶解光阻劑片段以增加剝離組合物之負載能力。共溶劑無法獨立地完全將光阻劑自基板移除且一些光阻劑殘餘物,尤其「外殼」會留在基板上。共溶劑之機理係如圖2中之(Y)所示。
因此,本發明之組合物適宜地組合溶劑A及共溶劑以獲得優異的剝離性能。機理係如圖2中之(Z)示意。
需謹慎篩選溶劑A及共溶劑。就安全性而言,適宜的溶劑A及共溶劑應具有比處理溫度高至少10℃,較佳30℃之閃點,及比處理溫度高至少40℃之沸點。熔點應低於室溫及較佳低於0℃以避免於保存或運輸期間結晶。然而,若單一溶劑不具有所有以上物理特性,例如,DMSO具有18.5℃之熔點,但對於剝離或溶解植入光阻劑特別有效,則其可與其他適宜溶劑混合以符合需求。
適宜的有機溶劑A係選自烷基亞碸,如二甲亞碸(DMSO),二甲基碸(DMSO2)及環丁碸;酮,如1-甲基-2-吡咯啶酮(NMP)、γ-丁內酯(BLO)(GBL)、乙基甲基酮、2-戊酮、3-戊酮、2-己酮及異丁基甲基酮;醇,如CnH2n+1OH,其中n=3至10,如1-丙醇、2-丙醇、丁醇、戊醇、1-己醇、1-庚醇及1-辛醇、乙基二乙二醇(EDG)、丁基二乙二醇(BDG)及苄基醇;醛,如苯甲醛;烷烴,如十三烷、十二烷、十一烷及癸烷;胺,如N,N-二甲基乙醇胺、二正丙胺、三正丙胺、異丁胺、第二丁胺、環己胺、甲基苯胺、鄰甲苯胺、間甲苯胺、鄰氯苯胺、間氯苯胺、辛基胺、N,N-二乙基羥胺、喹啉、N,N-二甲基乙醇胺或N,N-二甲基甲醯胺;或其等組合。
適宜的共溶劑係選自醇,包括一級、二級及三級醇,如異丙醇、異丁醇、第二丁醇、異戊醇、第三戊醇、乙二醇(EG)、丙二醇、1,2-丙二醇、1,3-丙二醇、1,2,3-丙三醇及1-胺基-2-丙醇;酯,如乙酸異丙酯及乙醯乙酸乙酯;含有羥基之胺,如三乙醇胺、乙醇胺(MEA)、甲醯胺、二甲基乙醯胺(DMAC)、2-甲基胺基-乙醇(NMEA)及N-乙基二異丙胺;或其等組合。
於以上有機溶劑中,於本發明中較佳將DMSO、NMP、苄基醇、丙醇、丁二醇、戊醇、N,N-二甲基乙醇胺、苯甲醛或其等混合物用作溶劑A。以DMSO、NMP、苄基醇、丁二醇及其等混合物為更佳。
於本發明中較佳將乙二醇、1,2-丙二醇、1-胺基-2-丙醇、三乙醇胺、MEA、乙酸異丙酯或其等混合物用作共溶劑,且以乙二醇、三乙醇胺、MEA或其等混合物為更佳。
若不添加其他添加劑,則溶劑A及共溶劑之量基本上係介於組合物之90至99重量%之間。溶劑A對共溶劑之比不受嚴格約束。
本發明之剝離組合物可視需要含有諸如螯合劑及表面活性劑之添加劑。適宜的螯合劑包括,但非限於,乙二胺四乙酸(EDTA)、二伸乙基三胺五乙酸(DTPA)及2,4-戊二酮。適宜的表面活性劑包括,但非限於,非離子型烷氧化醇、壬基酚及壬基乙氧化物。各添加劑之量可視需要改變且可由技術者根據先前技藝確定。較佳地,添加劑之總量少於組合物之約1重量%。
與大部份習知剝離組合物不同,本發明之剝離組合物實質上無水,即,水含量需少於3重量%,較佳少於1重量%,及更佳少於0.5重量%,以避免破壞矽基板。矽損失很大程度上與組合物之水含量有關。
本發明之另一目的係提供一種用於離子植入後之濕式方法。該方法包含步驟:
(a)提供一覆蓋有植入光阻劑之基板,及
(b)令該基板與本發明之組合物接觸足以將光阻劑自基板移除之時間。
應注意本發明之剝離方法無需乾式電漿灰化,故有利於減少循環次數及所消耗能量。
本發明之方法可於諸如習知濕式清洗台或清洗器之任何適宜設備中實施。基板與組合物之接觸可藉由諸如浸漬、漂洗、噴霧及噴射之任何適宜習知方式實施。
於本發明之一較佳實施例中,該方法係於濕式清洗台中實施。該方法可於25℃至90℃,較佳40℃至80℃,及更佳60℃至80℃之溫度下進行。此溫度遠低於比瑞合(piranha)清洗之處理溫度,其一般為120℃至140℃。據信高溫會增加基板之矽損失,故以較低溫度為佳。
一般而言,植入光阻劑可於20分鐘至2小時內自基板完全移除。準確時間係視光阻劑之類型、所使用之設備及處理條件而定。
本發明將藉由實例詳細說明,該等實例並非意欲限制本發明之範圍。將瞭解為本技藝者已知之任何修改或替換屬於本說明書揭示內容之範圍內。
實施以下實驗以評價水含量對多晶矽蝕刻速率之影響。將不同量之TMAH或其甲醇溶液(實例1至6)及BTMAH之甲醇溶液(實例7至9)添加至DMSO中。將不同量之水添加至一些溶液中(實例1至5、8及9)。於各種處理條件下將多晶矽晶圓浸入溶液中及測定各晶圓之厚度差異。結果顯示於表1中。
結果顯示H2O之增加明顯提高多晶矽蝕刻速率。此外,實例1至3顯示溫度越高多晶矽蝕刻速率越大。
測試不同組合物於各條件下之剝離能力,及結果顯示於下表2至5中。
表2顯示於所使用之胺中,TMAH於指定之處理條件下展現出乎意料有效之光阻劑剝離性能。應注意其他胺亦可移除光阻劑,但其等性能不及TMAH及BTMAH。
表3顯示TMAH之處理適用範圍較BTMAH廣。就BTMAH而言,70℃下需60分鐘來完成剝離。就TMAH而言,60℃下需60分鐘。如上所述,高溫不有利,係因其增加對矽基板之破壞。
A:清潔;C:於晶圓上具有一些PR殘餘物
已測試各溶劑。表4顯示所測試之溶液具有可接受之光阻劑移除能力,但於剝離後會導致溶液變渾濁(其歸類為溶劑A),或具有較差的光阻劑移除能力,但可溶解光阻劑(其歸類為共溶劑)。未發現對於光阻劑移除及溶解皆有效之溶劑。
表5顯示本發明之實施例之性能。應注意溶劑A對共溶劑之比不受嚴格約束。
圖1係典型離子植入後剝離與本發明之方法比較之流程示意圖。
圖2係剝離方法中之可能機理之示意圖。
(無元件符號說明)
Claims (12)
- 一種用於離子植入後剝離光阻劑之組合物,其包含:(a)胺,(b)有機溶劑A,及(c)共溶劑,其中該組合物之水含量係小於該組合物之1重量%,該胺係氫氧化四級胺,且其量為該組合物之1至4重量%,該有機溶劑A係選自由二甲亞碸(DMSO)、二甲基碸(DMSO2)、1-甲基-2-吡咯啶酮(NMP)、γ-丁內酯(BLO)(GBL)、乙基甲基酮、2-戊酮、3-戊酮、2-己酮及異丁基甲基酮、1-丙醇、2-丙醇、丁基醇、戊醇、1-己醇、1-庚醇、1-辛醇、乙基二乙二醇(EDG)、丁基二乙二醇(BDG)、苄基醇、苯甲醛、十三烷、十二烷、十一烷、癸烷、N,N-二甲基乙醇胺、二正丙胺、三正丙胺、異丁胺、第二丁胺、環己胺、甲基苯胺、鄰甲苯胺、間甲苯胺、鄰氯苯胺、間氯苯胺、辛胺、N,N-二乙基羥胺、喹啉、N,N-二甲基乙醇胺、N,N-二甲基甲醯胺;及其等組合組成之群,該共溶劑係選自由異丙基醇、異丁基醇、第二丁基醇、異戊基醇、第三戊基醇、乙二醇(EG)、丙二醇、1,2-丙二醇、1,3-丙二醇、1,2,3-丙三醇、1-胺基-2-丙醇、乙酸異丙酯、乙醯乙酸乙酯、三乙醇胺、乙醇胺 (MEA)、甲醯胺、二甲基乙醯胺(DMAC)、2-甲基胺基乙醇(NMEA)、N-乙基二異丙胺及其等組合組成之群,及該有機溶劑A與共溶劑之量為該組合物之90重量%至99重量%;且其中該組合物不含膽鹼或胺基酸。
- 如請求項1之組合物,其中該胺係四甲基氫氧化銨(TMAH)、苄基三甲基氫氧化銨(BTMAH)或其等組合。
- 如請求項1之組合物,其中該有機溶劑A係二甲亞碸(DMSO)、1-甲基-2-吡咯啶酮(NMP)、苄基醇、丙醇、丁基二乙二醇、戊醇、N,N-二甲基乙醇胺、苯甲醛或其等混合物。
- 如請求項1之組合物,其中該有機溶劑A係DMSO、NMP、苄基醇、丁基二乙二醇或其等混合物。
- 如請求項1之組合物,其中該共溶劑係選自由乙二醇、1,2-丙二醇、1-胺基-2-丙醇、三乙醇胺、乙醇胺(MEA)、乙酸異丙酯及其等組合組成之群。
- 如請求項1之組合物,其中該共溶劑係乙二醇、三乙醇胺、MEA或其等組合。
- 如請求項1之組合物,其中該組合物之水含量係小於該組合物之0.5重量%。
- 一種用於離子植入後剝離光阻劑之方法,其包含步驟:(a)提供覆蓋有植入光阻劑之基板,及(b)令該基板與請求項1之組合物於處理溫度下接觸足 以將該光阻劑自該基板移除之時間。
- 如請求項8之方法,其中該處理溫度係介於25℃至90℃之間。
- 如請求項9之方法,其中該處理溫度係介於40℃至80℃之間。
- 如請求項10之方法,其中該處理溫度係介於60℃至80℃之間。
- 如請求項8之方法,其中該接觸時間係介於20分鐘至1小時之間。
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RU2012107135A (ru) | 2013-09-10 |
US9484218B2 (en) | 2016-11-01 |
SG177755A1 (en) | 2012-03-29 |
TW201128327A (en) | 2011-08-16 |
WO2011012559A2 (en) | 2011-02-03 |
KR101746879B1 (ko) | 2017-06-14 |
KR20120041777A (ko) | 2012-05-02 |
IL217708A0 (en) | 2012-03-29 |
JP6165442B2 (ja) | 2017-07-19 |
EP2460177B1 (en) | 2016-03-23 |
IL217708A (en) | 2017-07-31 |
CN102473638B (zh) | 2015-02-18 |
US20120129747A1 (en) | 2012-05-24 |
WO2011012559A3 (en) | 2011-03-24 |
CN102473638A (zh) | 2012-05-23 |
SG10201404328QA (en) | 2014-10-30 |
MY185453A (en) | 2021-05-19 |
EP2460177A2 (en) | 2012-06-06 |
JP2013500503A (ja) | 2013-01-07 |
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