JP2014143415A5 - - Google Patents

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Publication number
JP2014143415A5
JP2014143415A5 JP2013273154A JP2013273154A JP2014143415A5 JP 2014143415 A5 JP2014143415 A5 JP 2014143415A5 JP 2013273154 A JP2013273154 A JP 2013273154A JP 2013273154 A JP2013273154 A JP 2013273154A JP 2014143415 A5 JP2014143415 A5 JP 2014143415A5
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JP
Japan
Prior art keywords
semiconductor substrate
photoresist pattern
composition
acid
descumming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013273154A
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English (en)
Japanese (ja)
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JP2014143415A (ja
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Publication date
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Publication of JP2014143415A publication Critical patent/JP2014143415A/ja
Publication of JP2014143415A5 publication Critical patent/JP2014143415A5/ja
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JP2013273154A 2012-12-31 2013-12-27 イオン注入法 Pending JP2014143415A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261748047P 2012-12-31 2012-12-31
US61/748,047 2012-12-31

Publications (2)

Publication Number Publication Date
JP2014143415A JP2014143415A (ja) 2014-08-07
JP2014143415A5 true JP2014143415A5 (enExample) 2018-07-12

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ID=51040929

Family Applications (1)

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JP2013273154A Pending JP2014143415A (ja) 2012-12-31 2013-12-27 イオン注入法

Country Status (5)

Country Link
US (1) US9209028B2 (enExample)
JP (1) JP2014143415A (enExample)
KR (1) KR102117302B1 (enExample)
CN (1) CN103915331B (enExample)
TW (1) TWI560754B (enExample)

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JP6328931B2 (ja) 2012-12-31 2018-05-23 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジストパターントリミング方法
JP6448903B2 (ja) * 2012-12-31 2019-01-09 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ イオン注入法
US9448486B2 (en) 2013-12-30 2016-09-20 Rohm And Haas Electronic Materials Llc Photoresist pattern trimming compositions and methods
KR102402923B1 (ko) 2014-02-24 2022-05-27 도쿄엘렉트론가부시키가이샤 감광화된 화학적 증폭 레지스트 화학물질을 사용하는 방법과 기술 및 프로세스
DE112015000546T5 (de) 2014-02-25 2016-11-10 Tokyo Electron Limited Chemische Verstärkungsverfahren und -methoden für entwickelbare untere Antireflexbeläge und gefärbte Implantationsresists
US9574107B2 (en) * 2015-02-16 2017-02-21 International Business Machines Corporation Fluoro-alcohol additives for orientation control of block copolymers
KR102381824B1 (ko) * 2015-04-13 2022-03-31 도쿄엘렉트론가부시키가이샤 기판을 평탄화하기 위한 시스템 및 방법
US10048594B2 (en) 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
US10429745B2 (en) 2016-02-19 2019-10-01 Osaka University Photo-sensitized chemically amplified resist (PS-CAR) simulation
WO2017197288A1 (en) 2016-05-13 2017-11-16 Tokyo Electron Limited Critical dimension control by use of a photo agent
JP6909374B2 (ja) 2016-05-13 2021-07-28 東京エレクトロン株式会社 光増感化学又は感光性化学増幅レジストを用いた限界寸法制御
US10684549B2 (en) 2016-12-31 2020-06-16 Rohm And Haas Electronic Materials Llc Pattern-formation methods
US11003074B2 (en) 2017-05-01 2021-05-11 Rohm And Haas Electronic Materials Llc Pattern formation methods and photoresist pattern overcoat compositions
US10691023B2 (en) * 2017-08-24 2020-06-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method for performing lithography process with post treatment
US10522349B2 (en) * 2017-11-30 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective coating by ion implantation for lithography patterning
KR20190085654A (ko) 2018-01-11 2019-07-19 삼성전자주식회사 반도체 소자의 제조 방법
KR101977886B1 (ko) * 2018-06-18 2019-05-13 영창케미칼 주식회사 패턴 프로파일 개선용 화학증폭형 포지티브 포토레지스트 조성물
US10796899B2 (en) * 2018-12-28 2020-10-06 Micron Technology, Inc. Silicon doping for laser splash blockage
KR102898764B1 (ko) 2019-08-16 2025-12-10 도쿄엘렉트론가부시키가이샤 확률 중심 결함 교정을 위한 방법 및 공정
CN112542379B (zh) * 2020-12-09 2022-11-08 济南晶正电子科技有限公司 一种薄膜图形化工艺方法、复合薄膜及电子元器件
US20240184207A1 (en) * 2022-12-06 2024-06-06 Applied Materials, Inc. Euv photoresist and underlayer adhesion modulation
US20240379376A1 (en) * 2023-05-09 2024-11-14 Applied Materials, Inc. Implant into euv metal oxide photoresist module to reduce euv dose

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JP2002299202A (ja) 2001-03-29 2002-10-11 Sony Corp 半導体装置の製造方法
JP3476080B2 (ja) 2001-11-05 2003-12-10 東京応化工業株式会社 微細パターンの形成方法
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JP4642001B2 (ja) 2006-10-24 2011-03-02 関東化学株式会社 フォトレジスト残渣及びポリマー残渣除去液組成物
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US7862982B2 (en) 2008-06-12 2011-01-04 International Business Machines Corporation Chemical trim of photoresist lines by means of a tuned overcoat material
JP4779028B2 (ja) 2009-02-27 2011-09-21 パナソニック株式会社 パターン形成方法
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KR101675458B1 (ko) * 2010-07-27 2016-11-14 삼성전자 주식회사 산 확산을 이용하는 반도체 소자의 제조 방법
US9122159B2 (en) * 2011-04-14 2015-09-01 Rohm And Haas Electronic Materials Llc Compositions and processes for photolithography
JP6328931B2 (ja) 2012-12-31 2018-05-23 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジストパターントリミング方法
JP6448903B2 (ja) 2012-12-31 2019-01-09 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ イオン注入法

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