JP2014143415A5 - - Google Patents

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Publication number
JP2014143415A5
JP2014143415A5 JP2013273154A JP2013273154A JP2014143415A5 JP 2014143415 A5 JP2014143415 A5 JP 2014143415A5 JP 2013273154 A JP2013273154 A JP 2013273154A JP 2013273154 A JP2013273154 A JP 2013273154A JP 2014143415 A5 JP2014143415 A5 JP 2014143415A5
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JP
Japan
Prior art keywords
semiconductor substrate
photoresist pattern
composition
acid
descumming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013273154A
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English (en)
Japanese (ja)
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JP2014143415A (ja
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Publication date
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Publication of JP2014143415A publication Critical patent/JP2014143415A/ja
Publication of JP2014143415A5 publication Critical patent/JP2014143415A5/ja
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JP2013273154A 2012-12-31 2013-12-27 イオン注入法 Pending JP2014143415A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261748047P 2012-12-31 2012-12-31
US61/748,047 2012-12-31

Publications (2)

Publication Number Publication Date
JP2014143415A JP2014143415A (ja) 2014-08-07
JP2014143415A5 true JP2014143415A5 (enExample) 2018-07-12

Family

ID=51040929

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013273154A Pending JP2014143415A (ja) 2012-12-31 2013-12-27 イオン注入法

Country Status (5)

Country Link
US (1) US9209028B2 (enExample)
JP (1) JP2014143415A (enExample)
KR (1) KR102117302B1 (enExample)
CN (1) CN103915331B (enExample)
TW (1) TWI560754B (enExample)

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JP6448903B2 (ja) * 2012-12-31 2019-01-09 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ イオン注入法
JP6328931B2 (ja) 2012-12-31 2018-05-23 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジストパターントリミング方法
KR102346806B1 (ko) 2013-12-30 2022-01-04 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토레지스트 패턴 트리밍 조성물 및 방법
WO2015127459A1 (en) 2014-02-24 2015-08-27 Tokyo Electron Limited Methods and techniques to use with photosensitized chemically amplified resist chemicals and processes
WO2015130695A1 (en) 2014-02-25 2015-09-03 Tokyo Electron Limited Chemical Amplification Methods and Techniques for Developable Bottom Anti-reflective Coatings and Dyed Implant Resists
US9574107B2 (en) * 2015-02-16 2017-02-21 International Business Machines Corporation Fluoro-alcohol additives for orientation control of block copolymers
JP6893613B2 (ja) * 2015-04-13 2021-06-23 東京エレクトロン株式会社 基板を平坦化するためのシステム及び方法
US10429745B2 (en) 2016-02-19 2019-10-01 Osaka University Photo-sensitized chemically amplified resist (PS-CAR) simulation
US10048594B2 (en) 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
TWI662360B (zh) 2016-05-13 2019-06-11 Tokyo Electron Limited 藉由使用光劑之臨界尺寸控制
US10551743B2 (en) 2016-05-13 2020-02-04 Tokyo Electron Limited Critical dimension control by use of photo-sensitized chemicals or photo-sensitized chemically amplified resist
US10684549B2 (en) 2016-12-31 2020-06-16 Rohm And Haas Electronic Materials Llc Pattern-formation methods
US11003074B2 (en) 2017-05-01 2021-05-11 Rohm And Haas Electronic Materials Llc Pattern formation methods and photoresist pattern overcoat compositions
US10691023B2 (en) * 2017-08-24 2020-06-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method for performing lithography process with post treatment
US10522349B2 (en) 2017-11-30 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective coating by ion implantation for lithography patterning
KR20190085654A (ko) 2018-01-11 2019-07-19 삼성전자주식회사 반도체 소자의 제조 방법
KR101977886B1 (ko) * 2018-06-18 2019-05-13 영창케미칼 주식회사 패턴 프로파일 개선용 화학증폭형 포지티브 포토레지스트 조성물
US10796899B2 (en) * 2018-12-28 2020-10-06 Micron Technology, Inc. Silicon doping for laser splash blockage
WO2021034567A1 (en) 2019-08-16 2021-02-25 Tokyo Electron Limited Method and process for stochastic driven defectivity healing
CN112542379B (zh) * 2020-12-09 2022-11-08 济南晶正电子科技有限公司 一种薄膜图形化工艺方法、复合薄膜及电子元器件
US20240184207A1 (en) * 2022-12-06 2024-06-06 Applied Materials, Inc. Euv photoresist and underlayer adhesion modulation

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US6180320B1 (en) 1998-03-09 2001-01-30 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby
US6372829B1 (en) 1999-10-06 2002-04-16 3M Innovative Properties Company Antistatic composition
JP4329216B2 (ja) 2000-03-31 2009-09-09 Ｊｓｒ株式会社 レジストパターン縮小化材料及びそれを使用する微細レジストパターンの形成方法
US6492075B1 (en) 2000-06-16 2002-12-10 Advanced Micro Devices, Inc. Chemical trim process
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JP2002006512A (ja) 2000-06-20 2002-01-09 Mitsubishi Electric Corp 微細パターン形成方法、微細パターン形成用材料、およびこの微細パターン形成方法を用いた半導体装置の製造方法
JP2002299202A (ja) 2001-03-29 2002-10-11 Sony Corp 半導体装置の製造方法
JP3476080B2 (ja) 2001-11-05 2003-12-10 東京応化工業株式会社 微細パターンの形成方法
JP3953822B2 (ja) 2002-01-25 2007-08-08 富士通株式会社 レジストパターン薄肉化材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法
KR100685598B1 (ko) * 2005-12-30 2007-02-22 주식회사 하이닉스반도체 이온주입용 마스크 패턴 형성 방법
JP4642001B2 (ja) * 2006-10-24 2011-03-02 関東化学株式会社 フォトレジスト残渣及びポリマー残渣除去液組成物
JP2009071049A (ja) * 2007-09-13 2009-04-02 Sanyo Electric Co Ltd 半導体基板への不純物注入方法
US7862982B2 (en) 2008-06-12 2011-01-04 International Business Machines Corporation Chemical trim of photoresist lines by means of a tuned overcoat material
JP4779028B2 (ja) 2009-02-27 2011-09-21 パナソニック株式会社 パターン形成方法
CN102184851B (zh) 2009-12-15 2015-07-15 罗门哈斯电子材料有限公司 光致抗蚀剂及其使用方法
KR101675458B1 (ko) * 2010-07-27 2016-11-14 삼성전자 주식회사 산 확산을 이용하는 반도체 소자의 제조 방법
EP2511766B1 (en) * 2011-04-14 2013-07-31 Rohm and Haas Electronic Materials LLC Topcoat compositions for photoresist and immersion photolithography process using them
JP6448903B2 (ja) 2012-12-31 2019-01-09 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ イオン注入法
JP6328931B2 (ja) 2012-12-31 2018-05-23 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジストパターントリミング方法

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