JP2014143415A5 - - Google Patents
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- Publication number
- JP2014143415A5 JP2014143415A5 JP2013273154A JP2013273154A JP2014143415A5 JP 2014143415 A5 JP2014143415 A5 JP 2014143415A5 JP 2013273154 A JP2013273154 A JP 2013273154A JP 2013273154 A JP2013273154 A JP 2013273154A JP 2014143415 A5 JP2014143415 A5 JP 2014143415A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- photoresist pattern
- composition
- acid
- descumming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 239000002253 acid Substances 0.000 claims description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 229910001423 beryllium ion Inorganic materials 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261748047P | 2012-12-31 | 2012-12-31 | |
| US61/748,047 | 2012-12-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014143415A JP2014143415A (ja) | 2014-08-07 |
| JP2014143415A5 true JP2014143415A5 (enExample) | 2018-07-12 |
Family
ID=51040929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013273154A Pending JP2014143415A (ja) | 2012-12-31 | 2013-12-27 | イオン注入法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9209028B2 (enExample) |
| JP (1) | JP2014143415A (enExample) |
| KR (1) | KR102117302B1 (enExample) |
| CN (1) | CN103915331B (enExample) |
| TW (1) | TWI560754B (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6448903B2 (ja) * | 2012-12-31 | 2019-01-09 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | イオン注入法 |
| JP6328931B2 (ja) | 2012-12-31 | 2018-05-23 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | フォトレジストパターントリミング方法 |
| KR102346806B1 (ko) | 2013-12-30 | 2022-01-04 | 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 | 포토레지스트 패턴 트리밍 조성물 및 방법 |
| WO2015127459A1 (en) | 2014-02-24 | 2015-08-27 | Tokyo Electron Limited | Methods and techniques to use with photosensitized chemically amplified resist chemicals and processes |
| KR102402422B1 (ko) | 2014-02-25 | 2022-05-25 | 도쿄엘렉트론가부시키가이샤 | 현상 가능한 하부 반사 방지 코팅 및 염색된 주입물 레지스트를 위한 화학 증폭 방법 및 기술 |
| US9574107B2 (en) * | 2015-02-16 | 2017-02-21 | International Business Machines Corporation | Fluoro-alcohol additives for orientation control of block copolymers |
| JP6893613B2 (ja) * | 2015-04-13 | 2021-06-23 | 東京エレクトロン株式会社 | 基板を平坦化するためのシステム及び方法 |
| US10048594B2 (en) | 2016-02-19 | 2018-08-14 | Tokyo Electron Limited | Photo-sensitized chemically amplified resist (PS-CAR) model calibration |
| US10429745B2 (en) | 2016-02-19 | 2019-10-01 | Osaka University | Photo-sensitized chemically amplified resist (PS-CAR) simulation |
| CN109313394B (zh) | 2016-05-13 | 2021-07-02 | 东京毅力科创株式会社 | 使用光敏化学品或光敏化学放大抗蚀剂的临界尺寸控制 |
| TWI662360B (zh) | 2016-05-13 | 2019-06-11 | Tokyo Electron Limited | 藉由使用光劑之臨界尺寸控制 |
| US10684549B2 (en) | 2016-12-31 | 2020-06-16 | Rohm And Haas Electronic Materials Llc | Pattern-formation methods |
| US11003074B2 (en) | 2017-05-01 | 2021-05-11 | Rohm And Haas Electronic Materials Llc | Pattern formation methods and photoresist pattern overcoat compositions |
| US10691023B2 (en) * | 2017-08-24 | 2020-06-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for performing lithography process with post treatment |
| US10522349B2 (en) | 2017-11-30 | 2019-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-reflective coating by ion implantation for lithography patterning |
| KR20190085654A (ko) | 2018-01-11 | 2019-07-19 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| KR101977886B1 (ko) * | 2018-06-18 | 2019-05-13 | 영창케미칼 주식회사 | 패턴 프로파일 개선용 화학증폭형 포지티브 포토레지스트 조성물 |
| US10796899B2 (en) * | 2018-12-28 | 2020-10-06 | Micron Technology, Inc. | Silicon doping for laser splash blockage |
| KR102898764B1 (ko) | 2019-08-16 | 2025-12-10 | 도쿄엘렉트론가부시키가이샤 | 확률 중심 결함 교정을 위한 방법 및 공정 |
| CN112542379B (zh) * | 2020-12-09 | 2022-11-08 | 济南晶正电子科技有限公司 | 一种薄膜图形化工艺方法、复合薄膜及电子元器件 |
| US20240184207A1 (en) * | 2022-12-06 | 2024-06-06 | Applied Materials, Inc. | Euv photoresist and underlayer adhesion modulation |
| US20240379376A1 (en) * | 2023-05-09 | 2024-11-14 | Applied Materials, Inc. | Implant into euv metal oxide photoresist module to reduce euv dose |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6180320B1 (en) | 1998-03-09 | 2001-01-30 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby |
| US6372829B1 (en) | 1999-10-06 | 2002-04-16 | 3M Innovative Properties Company | Antistatic composition |
| JP4329216B2 (ja) | 2000-03-31 | 2009-09-09 | Ｊｓｒ株式会社 | レジストパターン縮小化材料及びそれを使用する微細レジストパターンの形成方法 |
| US6492075B1 (en) | 2000-06-16 | 2002-12-10 | Advanced Micro Devices, Inc. | Chemical trim process |
| US6274289B1 (en) | 2000-06-16 | 2001-08-14 | Advanced Micro Devices, Inc. | Chemical resist thickness reduction process |
| JP2002006512A (ja) | 2000-06-20 | 2002-01-09 | Mitsubishi Electric Corp | 微細パターン形成方法、微細パターン形成用材料、およびこの微細パターン形成方法を用いた半導体装置の製造方法 |
| JP2002299202A (ja) | 2001-03-29 | 2002-10-11 | Sony Corp | 半導体装置の製造方法 |
| JP3476080B2 (ja) | 2001-11-05 | 2003-12-10 | 東京応化工業株式会社 | 微細パターンの形成方法 |
| JP3953822B2 (ja) | 2002-01-25 | 2007-08-08 | 富士通株式会社 | レジストパターン薄肉化材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法 |
| KR100685598B1 (ko) * | 2005-12-30 | 2007-02-22 | 주식회사 하이닉스반도체 | 이온주입용 마스크 패턴 형성 방법 |
| JP4642001B2 (ja) | 2006-10-24 | 2011-03-02 | 関東化学株式会社 | フォトレジスト残渣及びポリマー残渣除去液組成物 |
| JP2009071049A (ja) * | 2007-09-13 | 2009-04-02 | Sanyo Electric Co Ltd | 半導体基板への不純物注入方法 |
| US7862982B2 (en) | 2008-06-12 | 2011-01-04 | International Business Machines Corporation | Chemical trim of photoresist lines by means of a tuned overcoat material |
| JP4779028B2 (ja) | 2009-02-27 | 2011-09-21 | パナソニック株式会社 | パターン形成方法 |
| TWI605310B (zh) | 2009-12-15 | 2017-11-11 | 羅門哈斯電子材料有限公司 | 光阻劑及其使用方法 |
| KR101675458B1 (ko) * | 2010-07-27 | 2016-11-14 | 삼성전자 주식회사 | 산 확산을 이용하는 반도체 소자의 제조 방법 |
| US9122159B2 (en) * | 2011-04-14 | 2015-09-01 | Rohm And Haas Electronic Materials Llc | Compositions and processes for photolithography |
| JP6448903B2 (ja) | 2012-12-31 | 2019-01-09 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | イオン注入法 |
| JP6328931B2 (ja) | 2012-12-31 | 2018-05-23 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | フォトレジストパターントリミング方法 |
-
2013
- 2013-12-27 JP JP2013273154A patent/JP2014143415A/ja active Pending
- 2013-12-30 TW TW102148977A patent/TWI560754B/zh not_active IP Right Cessation
- 2013-12-31 KR KR1020130168070A patent/KR102117302B1/ko active Active
- 2013-12-31 CN CN201310757504.3A patent/CN103915331B/zh active Active
- 2013-12-31 US US14/145,674 patent/US9209028B2/en active Active
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