TWI560754B - Ion implantation methods - Google Patents
Ion implantation methodsInfo
- Publication number
- TWI560754B TWI560754B TW102148977A TW102148977A TWI560754B TW I560754 B TWI560754 B TW I560754B TW 102148977 A TW102148977 A TW 102148977A TW 102148977 A TW102148977 A TW 102148977A TW I560754 B TWI560754 B TW I560754B
- Authority
- TW
- Taiwan
- Prior art keywords
- ion implantation
- implantation methods
- methods
- ion
- implantation
- Prior art date
Links
- 238000005468 ion implantation Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
- G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261748047P | 2012-12-31 | 2012-12-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201440126A TW201440126A (zh) | 2014-10-16 |
TWI560754B true TWI560754B (en) | 2016-12-01 |
Family
ID=51040929
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102148977A TWI560754B (en) | 2012-12-31 | 2013-12-30 | Ion implantation methods |
Country Status (5)
Country | Link |
---|---|
US (1) | US9209028B2 (zh) |
JP (1) | JP2014143415A (zh) |
KR (1) | KR102117302B1 (zh) |
CN (1) | CN103915331B (zh) |
TW (1) | TWI560754B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI709165B (zh) * | 2017-11-30 | 2020-11-01 | 台灣積體電路製造股份有限公司 | 微影圖案化的方法 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6448903B2 (ja) * | 2012-12-31 | 2019-01-09 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | イオン注入法 |
JP6328931B2 (ja) | 2012-12-31 | 2018-05-23 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | フォトレジストパターントリミング方法 |
KR102346806B1 (ko) | 2013-12-30 | 2022-01-04 | 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 | 포토레지스트 패턴 트리밍 조성물 및 방법 |
KR102402923B1 (ko) | 2014-02-24 | 2022-05-27 | 도쿄엘렉트론가부시키가이샤 | 감광화된 화학적 증폭 레지스트 화학물질을 사용하는 방법과 기술 및 프로세스 |
US10020195B2 (en) * | 2014-02-25 | 2018-07-10 | Tokyo Electron Limited | Chemical amplification methods and techniques for developable bottom anti-reflective coatings and dyed implant resists |
US9574107B2 (en) * | 2015-02-16 | 2017-02-21 | International Business Machines Corporation | Fluoro-alcohol additives for orientation control of block copolymers |
CN107660277B (zh) * | 2015-04-13 | 2020-12-29 | 东京毅力科创株式会社 | 用于对衬底进行平坦化的系统和方法 |
US10429745B2 (en) | 2016-02-19 | 2019-10-01 | Osaka University | Photo-sensitized chemically amplified resist (PS-CAR) simulation |
US10048594B2 (en) | 2016-02-19 | 2018-08-14 | Tokyo Electron Limited | Photo-sensitized chemically amplified resist (PS-CAR) model calibration |
JP6750155B2 (ja) | 2016-05-13 | 2020-09-02 | 東京エレクトロン株式会社 | 光剤を用いた限界寸法制御 |
US10551743B2 (en) | 2016-05-13 | 2020-02-04 | Tokyo Electron Limited | Critical dimension control by use of photo-sensitized chemicals or photo-sensitized chemically amplified resist |
US10684549B2 (en) * | 2016-12-31 | 2020-06-16 | Rohm And Haas Electronic Materials Llc | Pattern-formation methods |
US11003074B2 (en) * | 2017-05-01 | 2021-05-11 | Rohm And Haas Electronic Materials Llc | Pattern formation methods and photoresist pattern overcoat compositions |
US10691023B2 (en) | 2017-08-24 | 2020-06-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for performing lithography process with post treatment |
KR20190085654A (ko) | 2018-01-11 | 2019-07-19 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
KR101977886B1 (ko) * | 2018-06-18 | 2019-05-13 | 영창케미칼 주식회사 | 패턴 프로파일 개선용 화학증폭형 포지티브 포토레지스트 조성물 |
US10796899B2 (en) * | 2018-12-28 | 2020-10-06 | Micron Technology, Inc. | Silicon doping for laser splash blockage |
KR20220046598A (ko) | 2019-08-16 | 2022-04-14 | 도쿄엘렉트론가부시키가이샤 | 확률 중심 결함 교정을 위한 방법 및 공정 |
CN112542379B (zh) * | 2020-12-09 | 2022-11-08 | 济南晶正电子科技有限公司 | 一种薄膜图形化工艺方法、复合薄膜及电子元器件 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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TW200831645A (en) * | 2006-10-24 | 2008-08-01 | Kanto Kagaku | Photoresist residue and polymer residue removing liquid composition |
TW201137521A (en) * | 2009-12-15 | 2011-11-01 | Rohm & Haas Elect Mat | Photoresists and methods for use thereof |
TW201250382A (en) * | 2011-04-14 | 2012-12-16 | Rohm & Haas Elect Mat | Compositions and processes for photolithography |
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US6180320B1 (en) | 1998-03-09 | 2001-01-30 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby |
US6372829B1 (en) | 1999-10-06 | 2002-04-16 | 3M Innovative Properties Company | Antistatic composition |
JP4329216B2 (ja) | 2000-03-31 | 2009-09-09 | Jsr株式会社 | レジストパターン縮小化材料及びそれを使用する微細レジストパターンの形成方法 |
US6492075B1 (en) | 2000-06-16 | 2002-12-10 | Advanced Micro Devices, Inc. | Chemical trim process |
US6274289B1 (en) | 2000-06-16 | 2001-08-14 | Advanced Micro Devices, Inc. | Chemical resist thickness reduction process |
JP2002006512A (ja) | 2000-06-20 | 2002-01-09 | Mitsubishi Electric Corp | 微細パターン形成方法、微細パターン形成用材料、およびこの微細パターン形成方法を用いた半導体装置の製造方法 |
JP2002299202A (ja) | 2001-03-29 | 2002-10-11 | Sony Corp | 半導体装置の製造方法 |
JP3476080B2 (ja) | 2001-11-05 | 2003-12-10 | 東京応化工業株式会社 | 微細パターンの形成方法 |
JP3953822B2 (ja) | 2002-01-25 | 2007-08-08 | 富士通株式会社 | レジストパターン薄肉化材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法 |
KR100685598B1 (ko) * | 2005-12-30 | 2007-02-22 | 주식회사 하이닉스반도체 | 이온주입용 마스크 패턴 형성 방법 |
JP2009071049A (ja) * | 2007-09-13 | 2009-04-02 | Sanyo Electric Co Ltd | 半導体基板への不純物注入方法 |
US7862982B2 (en) | 2008-06-12 | 2011-01-04 | International Business Machines Corporation | Chemical trim of photoresist lines by means of a tuned overcoat material |
JP4779028B2 (ja) | 2009-02-27 | 2011-09-21 | パナソニック株式会社 | パターン形成方法 |
KR101675458B1 (ko) * | 2010-07-27 | 2016-11-14 | 삼성전자 주식회사 | 산 확산을 이용하는 반도체 소자의 제조 방법 |
JP6328931B2 (ja) | 2012-12-31 | 2018-05-23 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | フォトレジストパターントリミング方法 |
JP6448903B2 (ja) | 2012-12-31 | 2019-01-09 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | イオン注入法 |
-
2013
- 2013-12-27 JP JP2013273154A patent/JP2014143415A/ja active Pending
- 2013-12-30 TW TW102148977A patent/TWI560754B/zh not_active IP Right Cessation
- 2013-12-31 CN CN201310757504.3A patent/CN103915331B/zh active Active
- 2013-12-31 US US14/145,674 patent/US9209028B2/en active Active
- 2013-12-31 KR KR1020130168070A patent/KR102117302B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200831645A (en) * | 2006-10-24 | 2008-08-01 | Kanto Kagaku | Photoresist residue and polymer residue removing liquid composition |
TW201137521A (en) * | 2009-12-15 | 2011-11-01 | Rohm & Haas Elect Mat | Photoresists and methods for use thereof |
TW201250382A (en) * | 2011-04-14 | 2012-12-16 | Rohm & Haas Elect Mat | Compositions and processes for photolithography |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI709165B (zh) * | 2017-11-30 | 2020-11-01 | 台灣積體電路製造股份有限公司 | 微影圖案化的方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2014143415A (ja) | 2014-08-07 |
KR20140088030A (ko) | 2014-07-09 |
TW201440126A (zh) | 2014-10-16 |
US9209028B2 (en) | 2015-12-08 |
CN103915331B (zh) | 2017-06-23 |
CN103915331A (zh) | 2014-07-09 |
US20150214056A1 (en) | 2015-07-30 |
KR102117302B1 (ko) | 2020-06-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |