201137521 六、發明說明： 【發明所屬之技術領域】 ‘本項發明係關於新穎光阻劑（後文中有稱為阻劑之情 形）’其包含低Tg成分且其特別適用於離子植入微影應 用。本發明之較佳祕劑對下方無機表面如Si〇N、氧化石夕、 氮化矽及其他無機表面可顯現良好黏著性。 【先前技術】 光阻劑是用於將影像轉到基板的感光膜。於基板表面 上形成-層光障劑塗層，然後經光罩暴露於活化輻射源。 離子植入技術業已用於摻雜半導體晶圓。藉由此方 法，離子束植入器於抽真空（低壓）艙中產生離子束，且該 離子被導向並「植入」至晶圓。 但使用目前的離子植入方法遇到嚴重問題。具體來 說’離子植入微影方案中’光阻劑通常不沈積於有機下方 層，而係沈積至無機層，例如氧氮化矽（Si〇N)、Si〇(氧化 矽）層與已應用於半導體裝置製造中，例如作為蝕刻中止層 及無機抗反射層之其他無機物如Si3〇4塗層。例如參照美國 專利案第 6, 124, 217、6, 153, 5〇4 及 6, 245, 682 號。 所欲為擁有提供良好解析度以及對Si〇N與其他無機 基板屬有良好黏著性之之新藉、光阻劑系統。 【發明内容】 我們現提供新穎光阻劑組成物，其較佳包含n有機 低Tg成分’2)含光酸不安定基之樹脂，3) 一種或多種光 酸產生劑化合物。本發明之較佳阻劑有用於以短波長成 3 95089 201137521 像，包括低於300 nm波長與低於200 nm波長，例如248 nm、 193 nm 及 EUV。 【實施方式】 使用於本發明阻劑中之一種或多種的低Tg成分可呈 各種設計。於一態樣中，較佳為包括含丙烯酸酯單元的樹 脂。更較佳地，丙烯酸酯樹脂單元較甲基丙烯酸酯樹脂單 元可為較佳的以提供低Tg樹脂成分。 於某態樣中，本發明光阻劑之低Tg樹脂包括可降低樹 脂的Tg的相對“可撓性”單體的聚合單元。例示可撓性單 體包含二乙二醇曱基丙烯酸酯與二乙二醇丙烯酸酯以及對 應的低碳數烷基（例如Ch)醚，特別是曱基醚，例如CH2= C(CH3)C(0)0CH2CH20CH3、CH2=CHC(0)0CH2CH20CH3、CH2=CHC(0) OCH2 CH2〇CH2CH2〇CH3、CH2=C(CH3)C(0)OCH2CH2〇CH2CH2〇CH3 等； 乙二醇曱基丙烯酸酯與乙二醇丙烯酸酯；具有4或更多碳 原子’典型地為4至約16個碳原子之丙烯酸烷基酯，如丙 烯酸正丁酯；與曱基丙烯酸羥基烷基酯或丙烯酸羥基烷基 酯’其中該羥基烷基取代基具有1至約16個碳原子，更較 佳為3或4至約16至20個碳原子等。 於某些較佳態樣中，低Tg樹脂將為併入光阻劑組成物 的化合物且在阻劑對SiON或氧化矽表面層之黏著性提供 顯著增加。點著性顯著增加係藉由相對於對照阻劑（依相同 方式加工之阻劑，但阻劑不含有低Tg樹脂）之增強的解析 度表示。該增強的解析度係藉由具有候選Tg樹脂（測試樹 脂）之阻劑與對照阻劑的掃描式電子顯微鏡（SEM)之目視檢 4 95089 201137521 查而測定。因此’可容易地經驗性鑑輯於任何給定的阻 劑糸統為適宜的低τ g樹脂。 適宜的低Tg樹脂可包括多種見相對低分子量的基 團’例如重量平均分子量小於約12,酬、10, _、8，麵t 7, 000、6, 〇〇〇、5, 000、4, 000 或甚至 3, _ 或 2, _。低 Tg樹脂可為均聚物也可為共聚物、三聚物、四聚物、五聚 物與包括多種重複單元之其他更高級聚合物。 較佳的低Tg樹脂可包括各種基團如包括—種或多種 雜原子（N、〇及/或S)的基團。 . 本發明之較佳阻劑可於短波長成像’包括低於· nm 及低於 200 nm ’如 248 nm、193 nm 及 EUV。 本發明之特佳光阻劑含有如本文所揭示之低Tg樹 脂，成像有效量之一種或多種光酸產生劑化合物（pAG)以及 選自下述所組成群組之樹脂： 1)含有可提供特別適合於248 nm成像之化學放大型正 阻劑的酸不安定基之酚系樹脂。此類樹脂之特佳者包括. i)含有乙烯基酚及丙烯酸烷基酯之聚合單元的聚合物，其 中該經聚合之丙烯酸烷基酯單元可於光酸存在下進行去封 阻反應（deblocking reaction)。可進行光酸誘導之去封阻 反應的例示性丙稀酸烧基酯包括例如丙稀酸第三丁 g旨、甲 基丙烯酸第三丁酯、丙烯酸曱基金剛烷基酯、曱基丙婦酸 甲基金剛烧基酯、以及其他可進行光酸誘導反應之丙稀酸 非環狀烷基酯及丙烯酸脂環族酯，例如美國專利案$ 6, 042, 997號及第5, 492, 793號之聚合物，該等案併入本 95089 5 201137521 文作為參考文獻；ii)含有下列聚合單元之聚合物：乙烯基 紛’環上不含羥基或羧基取代基之視需要經取代之乙烯基 苯基（如苯乙烯），以及丙烯酸烷基酯，如彼等揭示於上述 聚合物i)之去封阻基，如美國專利案第6, 〇42, 997號所揭 示之聚合物’其併入本文作為參考文獻；以及iii)含有下 列重複單元之聚合物：包含將與光酸反應之縮醛或縮酮部 分之重複單元’以及視需要之芳香族重複單元如苯基或酚 糸基團， 2)可提供特別適合在低於2〇〇 nm波長（如193 nm)成 像之化學放大型正阻劑的實質上或完全不含苯基或其他芳 香族基之樹脂。此類樹脂的特佳者包括：i)含有非芳香族 環狀烯烴（内環雙鍵）之聚合單元（如視需要經取代之降莰 烯）的聚合物’如美國專利案第5, 843, 624號所揭示之聚合 物（其係併入本文作為參考文獻）；ii)含有丙烯酸烷基酯單 元（如丙烯酸第三丁酯、甲基丙烯酸第三丁酯、丙烯酸甲基 金剛烧基酯、甲基丙烯酸甲基金剛烷基酯以及其他丙烯酸 非環狀烷基酯及丙烯酸脂環族酯）之聚合物，該等聚合物係 揭示於美國專利案第6, 057, 083號。 本發明之阻劑也可包含有區別（distinct)之PAG的混 合物’典型為2種或3種有區別之pag的混合物，更典型 為由總共2種有區別之PAG所構成的混合物。 本發明也提供用於形成本發明光阻劑之浮雕影像的方 法，包含用於形成低於四分之一微米尺寸或更低（如低於 0.2或0.1微米）之高度解析的經圖案化光阻劑影像（如， 6 95089 201137521 具有實質上垂直侧壁的圖案化線）之方法。 本項發明進一步包括包含基板之製造件，如其上塗布 有本發明之光阻劑及浮雕影像的微電子晶圓。本發明也包 括製造微電子晶圓和其他物件的方法。 此外，如前述，於一較佳態樣中，本發明提供廣泛知 情的離子植入加工。此製程可包含將摻雜劑離子（第111族 及/或第V族離子，如硼、砷、磷等）植入至基板表面（如半 導體晶圓），於該基板表面上係有做為遮罩之前述有機光阻 劑。被阻劑遮罩之基板可置於反應腔室中，該反應腔室可 提供減壓及來自可離子化源之離子電漿。這些離子包含前 述摻雜劑，當其被植入基板時為電活性者。可對反應腔室 施加電壓（如透過導電性腔室牆），以選擇性植入摻雜劑離 子。 本發明的其他態樣將於下文中揭示。 如則述’我們現提供新穎光阻劑組成物’其適當地包 含1)樹脂成分，其可適當地含有光酸不安定基；2)_種或 二種，酸產生劑化合物；以及3)低Tg樹脂。較佳地，該 =成刀1)、2)及3)係有區別的，亦即，該等成分不共價鏈 、’。且各自為不同材料。本發明的較佳光阻劑為正作用阻 特別是化學放大型阻劑。本發明也包括負作用光阻劑， ’、中=阻劑?'包含樹脂、交聯官能和本文所述之紛系成分。 較佳&樣中’本發明光阻劑可適宜地包含：D樹脂， 祕/生成刀i ’以及3)具有比樹脂D至少低約5°c之Tg 曰更&佳為其巾樹脂3)具有比樹脂1)至少低約1〇 7 95089 201137521 °C或20°C之Tg。關於本文所指之Tg值，該Tg值（或值的 差異）係藉由標準之差示掃描熱量儀技術所測定。 其他較佳具體實施例中，本發明光阻劑可適宜地包括 1)樹脂，2)光活性成分以及3)包括側鏈經基（C2-20)院基部 份及/或Ch。烷氧基部份之樹脂。 於某些較佳具體實施例中，該低Tg樹脂將安定於光阻 劑組成物中且不干擾該樹脂之微影製程。亦即，該低Tg樹 脂較佳地不促進過早的阻劑降解（亦即，降低之貨架期）， 或是不必然需使用替代性微影式加工條件。 典型地，該低Tg樹脂將是除了其他阻劑成分（例如光 酸不安定或去封阻樹脂、光酸產生劑、鹼性添加劑、表面 活性劑/流平劑、塑化劑及/或溶劑）以外之進一步分開的阻 劑成分。 於某些態樣中，阻劑中所用之適宜的低Tg樹脂添加劑 將不會含有光酸不安定部分，例如於光阻劑曝光步驟後會 進行去封阻反應之光酸不安定酯基或光酸不安定縮醛基。 於其他某些態樣中，阻劑中所用之較佳的低Tg樹脂添 加劑將含有光酸不安定部份，例如於光阻劑曝光步驟後會 進行去封阻反應之光酸不安定酯基或光酸不安定縮醛基。 於某些態樣中，該光阻劑將含有二種有區別的樹脂， 該等樹脂包括光酸不安定基團但其中該等有區別的樹脂不 同於Tg值，例如差至少5°C、10°C或15°C。 該低Tg樹脂可將其他功能提供給阻劑組成物，例如提 供或增加固體成分的溶解力。然而，與其他揮發性溶劑不 8 95089 201137521 同，於任何曝光前熱處理後，低Tg樹脂仍將以有效量留在 阻劑層中，例如較佳地，於任何曝光前熱處理後，至少約 10 20、30、40或50莫耳％量之調配於液體阻劑組成物中 的低Tg樹脂會留在阻劑組成物中。典型地，於任何熱處理 後，僅頊小量之低Tg樹脂仍留在阻劑塗層中來達到有效結 果’例如，低Tg樹脂可適當地以揮發性溶劑移除後該組劑 層總材料之自約0.05或0.U重量％至約5重量％之量存在。 、如本文所述，阻劑成分的各式取代基可視需要地經取 代。經取代之部分係視需要地於一個或是多個可行位置經 例如下述基取代··齒素（例如F、C1、Br及/或n、硝基、 氰基、磺酸基（sulfono)、烷基（包括Ci i6烷基，以^㈠烷 基較佳）、齒烷基（如氟烷基，例如三氟甲基；及全氟烷基， 例如全氟Ch烷基）、烷氧基（包括具有一個或多個'氧鏈結 之烷氧基，以Cl_8烷氧基較佳）、稀基（包括&七烯基， 以C2-8烯基較佳）、烯基（包括匕七烯基，以C2 8炔基較佳）、 芳基（例如苯基或萘基）、及經取代之芳基（例如經齒基、烷 氧基、烯基、炔基及/或烷基取代之芳基，該等取代基較佳 具有上述相應基團之碳數）。較佳的經取代之芳基包括經取 代之苯基、經取代之惠基及經取代之萘基。 本發明之光阻劑典型包含樹脂黏合劑及光活性成分及 低Tg樹脂。例如，較佳地樹脂黏合劑包括極性官能基團如 羥基或羧酸酯基（carboxy 1 ate)。較佳地該樹脂黏合劑係以 足以賦予該樹脂可鹼性水溶液顯影之量使用於阻劑組成 物。 95089 9 201137521 於許多具體實施例中，較佳為化學放大型正作用阻 劑。已有多種此類阻劑組成物被揭露於，例如，美國專利 案第 4, 968, 581 號、4, 883, 740 號 4, 810, 613 及 4, 491，628 號，及加拿大專利申請案2, 001，384號中。 用於本發明之光阻劑亦包含光活性成分，特別是一種 或多種光酸產生劑化合物（亦即PAG)，該PAG係以足以在 曝光於活化輻射後於該阻劑之塗層中產生潛像之量使用。 用於在193 nm及248 nm成像之較佳PAG係包括醯亞胺基 續酸醋（imidosulfonate)，如下式之化合物：201137521 VI. Description of the invention: [Technical field to which the invention pertains] 'This invention relates to a novel photoresist (hereinafter referred to as a resist)" which contains a low Tg component and is particularly suitable for ion implantation lithography application. The preferred agent of the present invention exhibits good adhesion to the underlying inorganic surfaces such as Si〇N, oxidized stone, tantalum nitride and other inorganic surfaces. [Prior Art] A photoresist is a photosensitive film for transferring an image to a substrate. A layer of photoresist coating is formed on the surface of the substrate and then exposed to the source of activating radiation through the reticle. Ion implantation technology has been used to dope semiconductor wafers. In this way, the ion beam implanter produces an ion beam in an evacuated (low pressure) chamber that is directed and "implanted" into the wafer. However, serious problems are encountered with current ion implantation methods. Specifically, in the 'ion implantation lithography scheme', the photoresist is usually not deposited on the underlying layer of the organic layer, but is deposited on the inorganic layer, such as yttrium oxynitride (Si〇N), Si〇 (yttria) layer and It is used in the manufacture of semiconductor devices, for example, as an etch stop layer and an inorganic antireflection layer such as a Si3〇4 coating. See, for example, U.S. Patent Nos. 6, 124, 217, 6, 153, 5, 4, and 6, 245, 682. It is intended to provide a new borrowing and photoresist system that provides good resolution and good adhesion to Si〇N and other inorganic substrates. SUMMARY OF THE INVENTION We now provide novel photoresist compositions which preferably comprise an n-organic low Tg component '2) a resin containing photoacid restless groups, and 3) one or more photoacid generator compounds. Preferred resists of the present invention are used to image 3 95089 201137521 at short wavelengths, including wavelengths below 300 nm and wavelengths below 200 nm, such as 248 nm, 193 nm, and EUV. [Embodiment] The low Tg component used for one or more of the resists of the present invention can be of various designs. In one aspect, it is preferred to include a resin containing an acrylate unit. More preferably, the acrylate resin unit may be preferred to the methacrylate resin unit to provide a low Tg resin component. In one aspect, the low Tg resin of the photoresist of the present invention comprises polymerized units of relatively "flexible" monomers which reduce the Tg of the resin. Exemplary flexible monomers comprise diethylene glycol methacrylate and diethylene glycol acrylate and corresponding lower alkyl (eg, Ch) ethers, particularly mercapto ethers, such as CH2=C(CH3)C (0)0CH2CH20CH3, CH2=CHC(0)0CH2CH20CH3, CH2=CHC(0) OCH2 CH2〇CH2CH2〇CH3, CH2=C(CH3)C(0)OCH2CH2〇CH2CH2〇CH3, etc.; ethylene glycol methacrylate And ethylene glycol acrylate; alkyl acrylate having 4 or more carbon atoms 'typically 4 to about 16 carbon atoms, such as n-butyl acrylate; hydroxyalkyl methacrylate or hydroxyalkyl acrylate The ester 'wherein the hydroxyalkyl substituent has from 1 to about 16 carbon atoms, more preferably from 3 or 4 to about 16 to 20 carbon atoms, and the like. In some preferred aspects, the low Tg resin will be a compound incorporated into the photoresist composition and provides a significant increase in the adhesion of the resist to the SiON or yttrium oxide surface layer. A significant increase in puncture is indicated by an enhanced resolution relative to the control resist (resistance processed in the same manner, but the resist does not contain a low Tg resin). The enhanced resolution was determined by visual inspection of a scanning electron microscope (SEM) with a resist of a candidate Tg resin (test resin) and a control resist 4 95089 201137521. Thus, it can be easily empirically identified as a suitable low τ g resin for any given resist system. Suitable low Tg resins may include a plurality of relatively low molecular weight groups such as a weight average molecular weight of less than about 12, valence, 10, _, 8, face t 7, 000, 6, 〇〇〇, 5,000, 4, 000 or even 3, _ or 2, _. The low Tg resin may be a homopolymer or a copolymer, a trimer, a tetramer, a pentapolymer, and other higher order polymers including a plurality of repeating units. Preferred low Tg resins may include various groups such as groups including one or more heteroatoms (N, hydrazine and/or S). Preferred resists of the present invention can be imaged at short wavelengths including below - nm and below 200 nm' such as 248 nm, 193 nm and EUV. The particularly preferred photoresist of the present invention comprises a low Tg resin as disclosed herein, an image effective amount of one or more photoacid generator compounds (pAG), and a resin selected from the group consisting of: 1) It is especially suitable for acid-labile phenolic resins of chemically amplified positive resistors for 248 nm imaging. Particularly preferred of such resins include: i) a polymer comprising polymerized units of a vinyl phenol and an alkyl acrylate, wherein the polymerized alkyl acrylate unit can be deblocked in the presence of a photoacid (deblocking) Reaction). Exemplary acrylic acid esters which can undergo a photoacid-induced deblocking reaction include, for example, acrylic acid tert-butyl, butyl methacrylate, decyl methacrylate, thiopropyl acrylate Acid methyl carbaryl esters, and other non-cyclic alkyl acrylates and acrylate alicyclic esters which are photoacid-inducible, such as U.S. Patent Nos. 6,6,092, and 5,492. Polymer No. 793, which is incorporated herein by reference. ii) Polymers containing the following polymerized units: vinyl having no hydroxyl or carboxyl substituents on the ring a phenyl group (e.g., styrene), and an alkyl acrylate, as disclosed in the above-mentioned polymer i), such as the polymer disclosed in U.S. Patent No. 6, 〇42,997. Incorporated herein by reference; and iii) a polymer comprising repeating units comprising an acetal or ketal moiety reactive with a photoacid and optionally an aromatic repeating unit such as a phenyl or phenolphthalein group. Mission, 2) can be specially adapted to be below 2〇〇 A chemically amplified positive resist that is imaged at an nm wavelength (e.g., 193 nm) is substantially or completely free of a phenyl or other aromatic resin. Particularly preferred of such resins include: i) polymers containing non-aromatic cyclic olefins (internal ring double bonds), such as, if desired, substituted decenes, as in U.S. Patent No. 5, 843 , the polymer disclosed in No. 624 (which is incorporated herein by reference); ii) containing alkyl acrylate units (such as tert-butyl acrylate, butyl methacrylate, methyl methacrylate) Polymers of methyladamantyl methacrylate and other non-cyclic alkyl acrylates and acrylate alicyclic esters are disclosed in U.S. Patent No. 6,057,083. The resist of the present invention may also comprise a mixture of distinct PAGs typically having a mixture of two or three distinct pags, more typically a mixture of a total of two distinct PAGs. The present invention also provides a method for forming a relief image of a photoresist of the present invention comprising highly resolved patterned light for forming below a quarter micron size or lower (e.g., below 0.2 or 0.1 microns) Resistive images (e.g., 6 95089 201137521 methods having patterned lines of substantially vertical sidewalls). The invention further includes an article of manufacture comprising a substrate, such as a microelectronic wafer having a photoresist and relief image of the invention coated thereon. The invention also includes methods of making microelectronic wafers and other articles. Moreover, as previously mentioned, in a preferred aspect, the present invention provides a broadly known ion implantation process. The process may include implanting dopant ions (Group 111 and/or Group V ions, such as boron, arsenic, phosphorus, etc.) onto a substrate surface (eg, a semiconductor wafer) on which the surface of the substrate is The aforementioned organic photoresist is masked. The substrate masked by the resist can be placed in a reaction chamber that provides reduced pressure and ionic plasma from an ionizable source. These ions comprise the aforementioned dopants which are electrically active when implanted into the substrate. A voltage can be applied to the reaction chamber (e.g., through a conductive chamber wall) to selectively implant dopant ions. Other aspects of the invention are disclosed below. As described above, 'we now provide a novel photoresist composition' which suitably comprises 1) a resin component which may suitably contain a photoacid restless group; 2) _ or two, an acid generator compound; and 3) Low Tg resin. Preferably, the = forming knives 1), 2) and 3) are distinguishable, that is, the components are not covalently chained, '. And each is a different material. A preferred photoresist of the present invention is a positive acting resistive, particularly a chemically amplified resist. The present invention also encompasses negative-acting photoresists, ', medium = resists' containing resins, cross-linking functionalities, and the various components described herein. Preferably, the photoresist of the present invention may suitably comprise: D resin, a secret/forming knife i' and 3) having a Tg of at least about 5 ° C lower than that of the resin D. 3) has a Tg which is at least about 1〇7 95089 201137521 ° C or 20 ° C lower than the resin 1). With respect to the Tg values referred to herein, the Tg values (or differences in values) are determined by standard differential scanning calorimetry techniques. In other preferred embodiments, the photoresist of the present invention may suitably comprise 1) a resin, 2) a photoactive component and 3) a side chain via (C2-20) base and/or Ch. Alkoxy moiety resin. In certain preferred embodiments, the low Tg resin will settle in the photoresist composition without interfering with the lithographic process of the resin. That is, the low Tg resin preferably does not promote premature resist degradation (i.e., reduced shelf life) or does not necessarily require the use of alternative lithographic processing conditions. Typically, the low Tg resin will be in addition to other resist components (eg photoacid unstable or deblocking resins, photoacid generators, alkaline additives, surfactants/leveling agents, plasticizers and/or solvents) Further separate resist components other than ). In some aspects, a suitable low Tg resin additive used in the resist will not contain a photoacid restorative moiety, such as a photoacid labile ester group that will undergo a deblocking reaction after the photoresist exposure step or The photoacid is unstable to the acetal group. In some other aspects, the preferred low Tg resin additive used in the resist will contain a photoacid restorative moiety, such as a photoacid labile ester group that will undergo a deblocking reaction after the photoresist exposure step. Or the acid is not stable acetal. In some aspects, the photoresist will contain two distinct resins, including photoacid restless groups, but wherein the distinguishing resins are different from the Tg value, such as a difference of at least 5 ° C, 10 ° C or 15 ° C. The low Tg resin provides additional functionality to the resist composition, such as to provide or increase the solvency of the solid component. However, as with other volatile solvents other than 8 95089 201137521, the low Tg resin will remain in the resist layer in an effective amount after any pre-exposure heat treatment, for example, preferably at least about 10 after any pre-exposure heat treatment. A low Tg resin blended in a liquid resist composition of 20, 30, 40 or 50 moles will remain in the resist composition. Typically, after any heat treatment, only a small amount of low Tg resin remains in the resist coating to achieve an effective result'. For example, the low Tg resin may be suitably removed with a volatile solvent after the constituent material of the coating layer. It is present in an amount from about 0.05 or from 0. U by weight to about 5% by weight. As described herein, various substituents of the blocker component can be optionally substituted. Substituted portions are optionally substituted at one or more possible positions via, for example, a dentate (eg, F, C1, Br, and/or n, nitro, cyano, sulfono) , alkyl (including Ci i6 alkyl, preferably alkyl), dentate alkyl (such as fluoroalkyl, such as trifluoromethyl; and perfluoroalkyl, such as perfluoroCh alkyl), alkoxy a base (including an alkoxy group having one or more 'oxygen linkages, preferably a Cl-8 alkoxy group), a dilute group (including &heptenyl, preferably a C2-8 alkenyl group), an alkenyl group (including An alkenyl group, preferably a C2 8 alkynyl group, an aryl group (such as a phenyl or naphthyl group), and a substituted aryl group (for example, a dentate group, an alkoxy group, an alkenyl group, an alkynyl group, and/or an alkane group) The substituted aryl group preferably has the carbon number of the above corresponding group. The preferred substituted aryl group includes a substituted phenyl group, a substituted ketone group and a substituted naphthyl group. The photoresist of the invention typically comprises a resin binder and a photoactive component and a low Tg resin. For example, preferably the resin binder comprises a polar functional group such as a hydroxyl group or a carboxylate group (carbox) Preferably, the resin binder is used in a resist composition in an amount sufficient to impart an alkaline aqueous solution to the resin. 95089 9 201137521 In many embodiments, a chemically amplified positive effect is preferred. Resistors. A variety of such resistive compositions are disclosed in, for example, U.S. Patent Nos. 4,968,581, 4,883,740, 4,810,613 and 4,491,628, and Patent Application No. 2,001,384. The photoresist used in the present invention also contains a photoactive component, particularly one or more photoacid generator compounds (i.e., PAG), which is sufficient for exposure to activation. The amount of latent image produced in the coating of the resist after irradiation is used. The preferred PAG for imaging at 193 nm and 248 nm includes imidosulfonate, a compound of the formula:
其中R為樟腦基、金剛烧基、烧基（如Cl-12院基）及氣烧基（如 氟（G-18烷基））；例如RCF2-，其中R為視需要經取代之金 剛烧基。 其他已知之PAG亦可用於本發明之阻劑中。尤其對於 在193 nm成像而言，爲了提供增加之透明度，通常較佳者 為不含有芳香族基之PAG，如上揭之醯亞胺基磺酸酯。 其他適用於本發明光阻劑的光酸產生劑係包括，舉例 而言：鏽鹽，如三氟曱烷磺酸三苯基硫鏽、三氟曱烷磺酸（對 第三丁氧基苯基）二苯基硫鑌、三氟曱烷磺酸參（對第三丁 氧基苯基）硫鏽、對曱苯磺酸三苯基硫鏽；硝基苄基衍生 物，如對曱苯績酸2-硝基苄基酯、對曱苯續酸2, 6-二硝基 苄基酯及對甲苯磺酸2, 4-二硝基苄基酯；磺酸酯，如 10 95089 201137521 1’ 2’ 3-參（甲烷磺醯氧基）苯、ι 2, 3_參（三氟甲烷磺醯氧基） 苯及1，2’ 3-參（對甲苯磺醯氧基）苯；重氮甲烷衍生物，如 雙（苯磺醯基）重氮甲烷、雙（對甲苯磺醯基） 重氮甲烧；乙 二醛二肟（gly〇xime)衍生物，如雙_〇_(對$苯磺醯基戶以_ 二甲基乙二醛二肟及雙-〇_(正丁烷磺醯基二甲基乙 二醛二肟’· Ν-羥基醯亞胺化合物之磺酸酯衍生物，如^羥 基琥珀醯亞胺甲烷磺酸酯、羥基琥珀醯亞胺三氟甲烷磺 酸酯，以及含鹵素之三畊化合物，如2_(4_甲氧基苯基） -4, 6-雙（三氯甲基χ，3, 5一三畊及2_(4_甲氧基萘基） -4, 6-雙（三氣甲基）-1，3, 5—三啡。可使用一種或多種此等 PAG。 根據本發明使用之該光阻劑之視需要的添加劑較佳為 添加鹼（added base)，尤其是氫氧化四曱基銨（TBAH)或乳 酸四曱基銨，其可增加經顯影之阻劑浮雕影像的解析度。 對於在193 nm成像之阻劑而言，較佳之添加鹼典型為氫氧 化四甲基銨之乳酸鹽以及多種其他胺類如三異丙醇、二氮 雜雙環十-婦或二氮雜雙環壬稀。該添加驗係適宜地以相 對較小量使用，如相對於總固體為約〇. 〇3至5重量％。 根據本發明使用之光阻劑亦可含有其他視需要之材 料。舉例而言，其他視需要之添加劑包括抗條紋劑、塑化 劑及加速劑等。除了填料及染料可以相對較大濃度（例如， 為阻劑乾燥成分之總重量的約5至30重量％)存在外，此 等視需要之添加劑典型將以較小濃度存在於光阻劑組成物 中。 95089 11 201137521 根據本^月使用之光阻劑通常係藉由下列已知方法製 備。舉例而言’本發明之阻劑可藉由將光阻劑之成分溶解 於適且命則中而4備為塗布組成物，該溶劑為諸如二醇醚 如2二甲氧基乙基_(二乙二醇二甲醚）、乙二醇單甲醚、丙 一醇單曱醚，两—醇單甲_乙酸乳酸酯如乳酸乙醋或 乳酉夂甲酉曰λ中礼酸乙醋為較佳I ;丙酸醋，尤其是丙酸 甲酉旨、丙酸乙酉旨及乙氧基丙酸乙酉旨；賽路蘇§旨⑹ik)sQive ester)如乙酸甲赛路蘇醋；芳香族煙如甲苯或二甲苯；或 嗣如甲基乙基酮、5衣己_及2-庚_。該光阻劑之固體含量 典型係於該光阻劑組成物之總重量的5至35重量％間變 化。此等溶劑之摻合物亦為適宜者。 液體光阻劑組成物可藉由諸如旋塗、浸塗、親塗或其 他傳統塗布技術施加至基板。當旋塗時，可基於所使用ς 具體旋塗設備、溶液之黏度、旋塗器之速度以及允許旋塗 之時間量來調整該塗布溶液之固體含量，以提供所欲之膜 厚度。 根據本發月使用之光阻劑組成物係適合施力口於與塗布 光阻劑有關之製程所習用的基板。舉例而言，該組成物可 %加於用以生產微處理器及其他積體電路組件之矽晶圓或 塗布有一氧化石夕之石夕晶圓上。亦可適宜地使用紹_氧化紹、 砷化鎵、陶瓷、石英、鋼、玻璃之基板等。光阻劑亦可適 宜地施加於抗反射層上，尤其是有機抗反射層。 將該光阻劑塗布於表面後，其可藉由加熱移除溶劑而 予以乾燥，較佳地係加熱至該光阻劑塗層無黏性為止。 12 95089 201137521 ,之後，將該光阻劑層曝光於成像輻射。可使用浸潤式 微影製程。本文所稱“浸潤式曝光，，或其他類似術語意指 曝光係以播置於曝光卫具與該經塗布之光阻劑組成物層之 間的流體層（如水或具有添加劑之水）進行。 該光阻劑組成物層係適當地圖案化曝光於活化輻射， 、曝光犯篁係取决於该曝光工具及該光阻劑組成物之成 :，典型介於約！至1〇〇 mJ/cm2之範圍。本文所稱將光阻 劑組成物曝光於活化該光阻劑之輻射係意指該輻射可藉由 諸如引發該光活性成分之反應（如由光酸產生劑化合物產 生光酸）而於該光阻劑中形成潛像。 如上所述，光阻劑組成物可藉由短曝光波長（尤其是低 於400⑽，低於300 nm及低於2〇〇 nm之曝光波長）予以Wherein R is a camphor group, an adamantyl group, a burnt group (such as a Cl-12 group), and a gas-burning group (such as a fluorine (G-18 alkyl group); for example, RCF2-, wherein R is a diamond that is optionally substituted. base. Other known PAGs can also be used in the resist of the present invention. Especially for imaging at 193 nm, in order to provide increased transparency, it is generally preferred to be a PAG that does not contain an aromatic group, such as the quinone imide sulfonate. Other photoacid generators suitable for use in the photoresist of the present invention include, for example, rust salts such as triphenylsulfonate trifluorosulfonate, trifluorodecanesulfonic acid (p-butoxybenzene) Diphenylthioindole, trifluorodecane sulfonic acid ginseng (p-butoxyphenyl) rust, p-toluenesulfonic acid triphenyl sulphide; nitrobenzyl derivative, such as p-toluene 2-nitrobenzyl ester, 2,6-dinitrobenzyl p-benzoate and 2,4-dinitrobenzyl p-toluenesulfonate; sulfonate, such as 10 95089 201137521 1 ' 2' 3-paraxyl (methanesulfonyloxy)benzene, ι 2, 3_ gin (trifluoromethanesulfonyloxy) benzene and 1,2' 3-parax(p-toluenesulfonyloxy)benzene; Nitromethane derivatives such as bis(phenylsulfonyl)diazomethane, bis(p-toluenesulfonyl)diazomethane; glyoxal dioxime (gly〇xime) derivatives such as bis-〇_(pair Benzene sulfonyl ketone is derived from sulfonic acid esters of dimethyl dimethyl aldehyde dioxime and bis- fluorene hydride (n-butane sulfonyl dimethyl glyoxal dioxime · hydroxy quinone imine) , such as hydroxy hydroxy amber imine methane sulfonate, hydroxy amber imine a methanesulfonate, and a halogen-containing three-till compound, such as 2-(4-methoxyphenyl)-4,6-bis(trichloromethylhydrazine, 3, 5-three tillage, and 2_(4_methoxy -Naphthyl) -4,6-bis(trimethylmethyl)-1,3,5-trimorphine. One or more of these PAGs may be used. The optional additives of the photoresist used in accordance with the present invention are It is preferred to add an added base, especially tetradecyl ammonium hydroxide (TBAH) or tetradecyl ammonium lactate, which increases the resolution of the developed resist image. For resists imaged at 193 nm Preferably, the base to be added is typically a lactate of tetramethylammonium hydroxide and various other amines such as triisopropanol, diazabicyclo-deca- or diazabicyclononanthracene. Used in relatively small amounts, such as from about 3 to about 5% by weight relative to the total solids. The photoresist used in accordance with the present invention may also contain other materials as desired. For example, other optional additives include anti- Strippers, plasticizers, accelerators, etc. In addition to fillers and dyes can be relatively large concentrations (for example, resisting dry ingredients) Except for the presence of about 5 to 30% by weight of the weight, such optional additives will typically be present in the photoresist composition in minor concentrations. 95089 11 201137521 Photoresists used in accordance with the present invention are generally It is known to prepare a method. For example, the resist of the present invention can be prepared as a coating composition by dissolving the components of the photoresist in an appropriate manner, such as a glycol ether such as 2-dimethoxy. Ethyl ethyl _ (diethylene glycol dimethyl ether), ethylene glycol monomethyl ether, propylene glycol monoterpene ether, bis-alcohol mono-acetic acid lactate such as lactic acid ethyl acetate or chylomethine λ Acetate vinegar is preferred I; propionic acid vinegar, especially for the purpose of propionate, acetaminophen and ethoxypropionate; 赛路苏 § (6) ik) sQive ester) Sulphate; aromatic fumes such as toluene or xylene; or such as methyl ethyl ketone, 5 hexose and 2-glycol. The solids content of the photoresist typically varies from 5 to 35 weight percent of the total weight of the photoresist composition. Blends of such solvents are also suitable. The liquid photoresist composition can be applied to the substrate by, for example, spin coating, dip coating, pro-coating, or other conventional coating techniques. When spin coated, the solids content of the coating solution can be adjusted to provide the desired film thickness based on the particular spin coating equipment used, the viscosity of the solution, the speed of the spinner, and the amount of time allowed for spin coating. The photoresist composition used in accordance with this month is suitable for use in substrates that are conventionally used in processes associated with coating photoresists. For example, the composition can be added to a wafer for the production of microprocessors and other integrated circuit components or to a wafer coated with a oxidized stone. It is also suitable to use a substrate such as oxidized, gallium arsenide, ceramic, quartz, steel, or glass. The photoresist can also be suitably applied to the antireflective layer, especially the organic antireflective layer. After the photoresist is applied to the surface, it can be dried by removing the solvent by heating, preferably by heating until the photoresist coating is tack-free. 12 95089 201137521, after which the photoresist layer is exposed to imaging radiation. An immersion lithography process can be used. As used herein, "immersion exposure," or other similar terms, means that the exposure is carried out by spreading a fluid layer (such as water or water with additives) between the exposure aid and the coated photoresist composition layer. The photoresist composition layer is suitably patterned to be exposed to activating radiation, and the exposure is dependent on the exposure tool and the composition of the photoresist: typically between about ! to 1 〇〇 mJ/cm 2 The scope of exposure of the photoresist composition to the activator of the photoresist means that the radiation can be caused by, for example, initiating a reaction of the photoactive component (eg, photoacids from a photoacid generator compound). Forming a latent image in the photoresist. As described above, the photoresist composition can be applied by a short exposure wavelength (especially an exposure wavelength lower than 400 (10), lower than 300 nm, and lower than 2 〇〇 nm).
光活化，其中，I線（365 nm)，248 run與193 nm以及EUV 為特佳之曝光波長。 曝光之後，該組成物之膜層較佳係於約7〇。(：至約16〇 C之溫度範圍烘烤。之後，較佳係藉由使用水性鹼性顯影 劑來處理而使該膜顯影，該水性鹼性顯影劑係諸如四級銨 氫氧化物溶液如氫氧化四烷基銨溶液；各式胺溶液，較佳 係0.26 N氫氧化四曱基銨’如乙胺、正丙胺、二乙胺、二 正丙胺、三乙胺或曱基二乙基胺；醇胺如二乙醇胺或三乙 醇胺；以及環狀胺如吡咯、吡啶等。 本發明之光阻劑及方法可使用於廣範圍的應用中，包 括，例如於薄膜頭（如約3至5/zm)、磁碟、CD罩以及後端 植入的製造中。 95089 13 201137521 再者，本發明之光阻劑亦可適用於在半導體晶圓上邢 成金屬凸塊。此加工可包括：a)將本發明之光阻劑置於^ 導體晶圓上，較佳提供厚膜塗層，例如5〇以m或更厚之乾 燥後阻劑塗層；c)將該光阻劑組成物層成像式曝光於光化 輻射’包括低於300 nm或低於200 nm輻射，尤其是248 nm 及193 nm ; d)顯影該經曝光光阻劑組成物層以提供經圖案 化區域；e)沈積金屬於經圖案化區域中；以及〇移除該經 曝光光阻劑組成物以提供具金屬凸塊之半導體晶圓。 於此凸塊形成方法中，係將光阻劑層成像而得以於感 光層中形成開口’例如孔（via)。於此製程中’感光層係置 於電子裝置上的導電層上。感光組成物的曝光與後^與 於該感光組賴巾提供了經定狀洞（孔），並暴露出下= 導電層。因此’該製程的下―個步驟為使㈣、蚊義之洞 (孔）沈積金屬或金屬合金凸塊。此金屬沈積可能藉由無電 或電解式沈積製程。電解式金屬沈積為較佳者。於電解 ，積製財，f子裝置基板（亦即，半料基板）係作為^ 於沈積金屬或金屬合金前，諸如適合作為焊料 層，例如銅或錄，可藉由濺鍍、無電沈積等沈積，以 凸塊下金屬。此凸塊下金屬層典型為自_ 厚’並作為後續鍍覆之焊料凸塊的可濕潤基礎。 铜f廣泛種類的金屬可無電式地沈積，包括但不限於 及合麗金、銀、Μ °可電解式沈積之適當金屬 及金屬,金包括但不限於銅、錫、錫务錄、金、銀、錫 95089 14 201137521 -銻、錫-銅、錫-叙、錫-銦、錫_銀、把等。此金屬鍍覆浴 為技術領域中具有通常知識者已知，並已可由各種來源取 得，例如自羅門哈斯（Rohm and Haas)。 於-具體實施例中，於半導體晶圓上之金屬沈積物係 有用地作為焊料凸塊。因此，較佳地，該金屬凸塊為可焊 性金屬及金屬合金，例如錫、錫_錯、錫—銅、錫—銀、錫一 鉍、錫-銅-纽、錫-銅—銀等。焊料凸塊之適當金屬及金屬 合金的形成方法係揭露於美國專利案第5186 383、 5, 902, 472、5, 990, 564、6, 099, 713 及 6, 013, 572 號中以 及歐洲專利申請案第EP 1 148 548號（Cheung等人）中， 所有該等案藉此併入參考。例示性金屬及金屬合金包括伸 不限於錫；具有少於2重量％銅（較佳約0.7重量％銅）之錫— 鋼合金；具有少於2G重量％銀（較佳約自3.5至10重量％ 銀）之錫-銀合金；具有自5至25重量％祕（較佳約2〇重量％ 鉍）之錫-叙合金；具有少於5重量％銀（較佳約自3. 5重量％ 銀）、少於2重量％銅（較佳約〇 7.重量％銅）以及餘量錫之錫 -銀-銅合金。於一具體實施例中，用於銲錫凸塊之金屬合 金係不含錯，亦即，其含有< 10 _錯。 通常’適當之電解式金屬鑛覆浴為酸性，且含有酸、 該-種或多種待沈積金屬之水可溶形式、及視需要之一種 或夕種有機添加劑，例如亮光劑（加速劑）、載劑（抑制劑）、 μ平劑、延性增加劑、濕濁劑、浴安定劑（特別適用於含錫 細粒劑等。各視需要成分的存在與否、種類及含量係 依所使用之具體金屬鍍覆浴而變化。此金屬錢覆浴通常為 95089 15 201137521 商業上可購得者，例如購自希普列公司（s h i心 Company) 〇 於此製程中’阻劑組成物作為不欲錢覆區域之保護 層。金屬沉積後，將剩餘阻劑組成物剝除，例如藉由於約 40至之溫度使用商業上可購得之卜甲基吨洛。定綱 (NMP)系剝除劑。適當之剝除劑可購自各式來源。 所有本文中提及之文槽於此併入本文參考。下述非限 制性實施例係例示性說明本發明。 實施例1:阻劑製備Photoactivation, in which the I line (365 nm), 248 run and 193 nm, and EUV are particularly good exposure wavelengths. After exposure, the film layer of the composition is preferably about 7 Å. (: baking to a temperature range of about 16 ° C. Thereafter, the film is preferably developed by treatment with an aqueous alkaline developer such as a quaternary ammonium hydroxide solution such as a tetraalkylammonium hydroxide solution; each amine solution, preferably 0.26 N tetradecyl ammonium hydroxide such as ethylamine, n-propylamine, diethylamine, di-n-propylamine, triethylamine or decyldiethylamine Alcohol amines such as diethanolamine or triethanolamine; and cyclic amines such as pyrrole, pyridine, etc. The photoresists and methods of the present invention can be used in a wide range of applications including, for example, film heads (e.g., about 3 to 5/). Zm), disk, CD cover, and back-end implant fabrication. 95089 13 201137521 Furthermore, the photoresist of the present invention can also be applied to metal bumps on a semiconductor wafer. This processing can include: a The photoresist of the present invention is placed on a conductor wafer, preferably provided with a thick film coating such as a dry resist coating of 5 Å or more; c) the photoresist composition layer Imaging exposure to actinic radiation 'includes radiation below 300 nm or below 200 nm, especially 248 nm and 193 nm; d) Filming the exposed photoresist composition layer to provide a patterned region; e) depositing a metal in the patterned region; and removing the exposed photoresist composition to provide a semiconductor bump with a metal bump . In the bump forming method, the photoresist layer is imaged to form an opening such as a via in the photosensitive layer. In this process, the photosensitive layer is placed on the conductive layer on the electronic device. The exposure and subsequent exposure of the photosensitive composition provides a defined hole (hole) to the photosensitive set and exposes the lower = conductive layer. Therefore, the next step in the process is to deposit metal or metal alloy bumps in (4), Mosquito holes (holes). This metal deposition may be by electroless or electrolytic deposition processes. Electrolytic metal deposition is preferred. In the case of electrolysis, the substrate of the sub-device (ie, the half-substrate) is used as a solder layer, such as copper or recording, before sputtering of metal or metal alloy, by sputtering, electroless deposition, etc. Deposited with a bump under the metal. The sub-bump metal layer is typically self-thickness and serves as a wettable basis for subsequent plated solder bumps. Copper f A wide variety of metals can be deposited without electricity, including but not limited to the appropriate metals and metals that can be electrolytically deposited, including but not limited to copper, tin, tin, gold, Silver, tin 95089 14 201137521 - bismuth, tin - copper, tin - Syria, tin - indium, tin _ silver, put and so on. This metal plating bath is known to those of ordinary skill in the art and can be obtained from a variety of sources, such as from Rohm and Haas. In a particular embodiment, the metal deposit on the semiconductor wafer is useful as a solder bump. Therefore, preferably, the metal bumps are solderable metals and metal alloys, such as tin, tin-stagger, tin-copper, tin-silver, tin-bismuth, tin-copper-nucleus, tin-copper-silver, etc. . Suitable metal and metal alloy formation methods for solder bumps are disclosed in U.S. Patent Nos. 5,186,383, 5, 902, 472, 5, 990, 564, 6, 099, 713 and 6, 013, 572, and European patents. In the application of EP 1 148 548 (Cheung et al.), all such references are hereby incorporated by reference. Exemplary metals and metal alloys include tin but not limited to tin; tin-steel alloys having less than 2 weight percent copper (preferably about 0.7 weight percent copper); less than 2 weight percent silver (preferably from about 3.5 to 10 weight).重量重量的。 The tin-silver alloy having a tin-silver alloy; having a tin-sodium alloy from 5 to 25 wt% (preferably about 2 wt% 铋); having less than 5% by weight of silver (preferably from about 3.5 wt%) Silver), less than 2% by weight of copper (preferably about 7.7% by weight of copper) and the tin-silver-copper alloy of the balance tin. In one embodiment, the metal alloy used for the solder bumps is free of errors, i.e., it contains < 10 _. Generally, an appropriate electrolytic metal ore bath is acidic and contains an acid, a water-soluble form of the metal or a plurality of metals to be deposited, and an organic additive such as a brightener (accelerator), if necessary, Carrier (inhibitor), μ leveling agent, ductility increasing agent, wet turbid agent, bath stabilizer (especially suitable for tin-containing fine granules, etc. The presence or absence, type and content of each component as needed This is a change in the specific metal plating bath. This metal money bath is usually 95089 15 201137521 commercially available, for example, from the company "Shixin Company". In this process, the resist composition is not intended. The protective layer of the money-covered area. After the metal is deposited, the remaining resist composition is stripped, for example, by using a commercially available methyl tonol, a NMP-based stripping agent, at a temperature of about 40 to about. Stripping agents are commercially available from various sources. All references herein are incorporated herein by reference. The following non-limiting examples are illustrative of the invention.
^40 *~°40 低Tg樹脂 藉由混合下述成分（下述1至5)而製備了光阻劑，其 中含量係以阻劑總重的重量％表示。 ’、^40 *~°40 Low Tg Resin A photoresist is prepared by mixing the following components (1 to 5 below), wherein the content is expressed by weight% of the total weight of the resist. ’,
1 .樹脂。光阻劑之樹脂（指名為上述結構之樹爿^ 1 )〔 如上所示，其中該三聚物之各重複單元右侧之數目表示該 三聚物中該單元之重量含量（基於樹脂合成中單體之奸Z 95089 16 201137521 量）。此樹脂基於流體光阻劑總重計，存在量為12重量％。 2·光酸產生劑化合物（PAG)。PAG為全氟丁烧確酸第三 丁基苯基四亞曱基硫鏽，基於流體光阻劑總重計，存在量 為2.5重量％。 3. 鹼性添加劑。鹼性添加劑為N_烷基己内醯胺，基於 光阻劑組成物的總重計，其量為〇. 〇17重量0/〇。 4. 低Tg樹脂。該光阻劑之Tg樹脂係如上所示，其中 該二聚物之各重複單元右側之數目表示該三聚物中該單元 之重量含量（基於樹脂合成中單體之饋入量）。此低Tg樹脂 基於流體光阻劑總重計，存在量為8重量％。 5·溶劑。溶劑為乳酸乙酯，以阻劑餘量提供。 實施例2 :微影加工 貫施例 中配製之阻劑組成物係旋塗於SiON晶圓表 面，並藉由真空熱板於9〇t軟烤6〇秒、。阻劑塗層係透過 光罩於193⑽曝光’接著該經曝光塗層係於1HTC經曝光 後供烤。接著將經塗覆晶圓以〇·26Ν氫氧化四丁基銨水溶 液處理，以顯影成像後阻劑層。 (連 __)係曝 【圖式簡單說明】麵％境）_子植入加工。 無。 【主要元件符號說明】 無。 95089 171. Resin. The resin of the photoresist (referred to as the tree 爿 ^ 1 of the above structure) [As shown above, wherein the number of the right side of each repeating unit of the terpolymer indicates the weight content of the unit in the terpolymer (based on resin synthesis) Monopoly Z 95089 16 201137521 quantity). This resin was present in an amount of 12% by weight based on the total weight of the fluid photoresist. 2. Photoacid generator compound (PAG). PAG is perfluorobutyric acid tributyl phenyltetradecyl sulphur, which is present in an amount of 2.5% by weight based on the total weight of the fluid photoresist. 3. Alkaline additives. The alkaline additive is N-alkyl caprolactam, based on the total weight of the photoresist composition, in an amount of 〇17 00/0. 4. Low Tg resin. The Tg resin of the photoresist is as shown above, wherein the number of the right side of each repeating unit of the dimer indicates the weight content of the unit in the trimer (based on the amount of monomer fed in the resin synthesis). This low Tg resin was present in an amount of 8% by weight based on the total weight of the fluid photoresist. 5. Solvents. The solvent is ethyl lactate, provided as the remainder of the resist. Example 2: lithography processing The resist composition prepared in the examples was spin-coated on the surface of a SiON wafer and soft baked at 9 Torr for 6 sec by a vacuum hot plate. The resist coating was exposed to 193 (10) through a reticle. The exposed coating was then exposed to 1 HTC for exposure. The coated wafer is then treated with a 〇·26Ν tetrabutylammonium hydroxide aqueous solution to develop the imaged resist layer. (Continuous __) system exposure [Simple diagram description] face% environment) _ sub-implant processing. no. [Main component symbol description] None. 95089 17