JP6448903B2 - イオン注入法 - Google Patents
イオン注入法 Download PDFInfo
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- JP6448903B2 JP6448903B2 JP2013273208A JP2013273208A JP6448903B2 JP 6448903 B2 JP6448903 B2 JP 6448903B2 JP 2013273208 A JP2013273208 A JP 2013273208A JP 2013273208 A JP2013273208 A JP 2013273208A JP 6448903 B2 JP6448903 B2 JP 6448903B2
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- 238000000034 method Methods 0.000 title claims description 42
- 238000005468 ion implantation Methods 0.000 title claims description 21
- 239000000203 mixture Substances 0.000 claims description 78
- 229920002120 photoresistant polymer Polymers 0.000 claims description 64
- 239000000758 substrate Substances 0.000 claims description 55
- 239000004065 semiconductor Substances 0.000 claims description 30
- 239000002904 solvent Substances 0.000 claims description 26
- 239000002253 acid Substances 0.000 claims description 22
- 229920000642 polymer Polymers 0.000 claims description 22
- 239000011159 matrix material Substances 0.000 claims description 15
- 239000003795 chemical substances by application Substances 0.000 claims description 12
- 150000002170 ethers Chemical class 0.000 claims description 10
- 238000002513 implantation Methods 0.000 claims description 9
- 239000003960 organic solvent Substances 0.000 claims description 9
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000011161 development Methods 0.000 claims description 7
- VVJKKWFAADXIJK-UHFFFAOYSA-N Allylamine Chemical compound NCC=C VVJKKWFAADXIJK-UHFFFAOYSA-N 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 229910001423 beryllium ion Inorganic materials 0.000 claims description 4
- 150000002148 esters Chemical class 0.000 claims description 4
- 229940124530 sulfonamide Drugs 0.000 claims description 4
- 150000003456 sulfonamides Chemical class 0.000 claims description 4
- 230000003667 anti-reflective effect Effects 0.000 claims description 3
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 3
- 125000000524 functional group Chemical group 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- BYEAHWXPCBROCE-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropan-2-ol Chemical compound FC(F)(F)C(O)C(F)(F)F BYEAHWXPCBROCE-UHFFFAOYSA-N 0.000 claims description 2
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 claims description 2
- XLLXMBCBJGATSP-UHFFFAOYSA-N 2-phenylethenol Chemical compound OC=CC1=CC=CC=C1 XLLXMBCBJGATSP-UHFFFAOYSA-N 0.000 claims description 2
- 229910020175 SiOH Inorganic materials 0.000 claims description 2
- 150000008064 anhydrides Chemical class 0.000 claims description 2
- 150000002596 lactones Chemical class 0.000 claims description 2
- 239000011877 solvent mixture Substances 0.000 claims description 2
- 239000003513 alkali Substances 0.000 claims 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 description 19
- 230000008569 process Effects 0.000 description 18
- 239000004094 surface-active agent Substances 0.000 description 17
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 14
- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 description 12
- 239000007787 solid Substances 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 12
- 239000002019 doping agent Substances 0.000 description 11
- 239000000243 solution Substances 0.000 description 9
- BDHFUVZGWQCTTF-UHFFFAOYSA-N sulfonic acid Chemical compound OS(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-N 0.000 description 9
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 8
- 150000007513 acids Chemical class 0.000 description 7
- 125000002947 alkylene group Chemical group 0.000 description 7
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 125000003837 (C1-C20) alkyl group Chemical group 0.000 description 6
- WVYWICLMDOOCFB-UHFFFAOYSA-N 4-methyl-2-pentanol Chemical compound CC(C)CC(C)O WVYWICLMDOOCFB-UHFFFAOYSA-N 0.000 description 6
- 239000004677 Nylon Substances 0.000 description 6
- 125000003545 alkoxy group Chemical group 0.000 description 6
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 6
- -1 carbonyloxy, sulfonamide Chemical class 0.000 description 6
- 125000004093 cyano group Chemical group *C#N 0.000 description 6
- 125000002485 formyl group Chemical group [H]C(*)=O 0.000 description 6
- 239000004615 ingredient Substances 0.000 description 6
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 6
- 229920001778 nylon Polymers 0.000 description 6
- 150000003568 thioethers Chemical class 0.000 description 6
- 230000003213 activating effect Effects 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 5
- 238000007654 immersion Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229920003145 methacrylic acid copolymer Polymers 0.000 description 5
- 229940117841 methacrylic acid copolymer Drugs 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 150000002576 ketones Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- QPRQEDXDYOZYLA-UHFFFAOYSA-N 2-methylbutan-1-ol Chemical compound CCC(C)CO QPRQEDXDYOZYLA-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 3
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 3
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 3
- 239000000908 ammonium hydroxide Substances 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 125000001153 fluoro group Chemical group F* 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- QQZOPKMRPOGIEB-UHFFFAOYSA-N n-butyl methyl ketone Natural products CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 125000001453 quaternary ammonium group Chemical group 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- BBMCTIGTTCKYKF-UHFFFAOYSA-N 1-heptanol Chemical compound CCCCCCCO BBMCTIGTTCKYKF-UHFFFAOYSA-N 0.000 description 2
- JVSWJIKNEAIKJW-UHFFFAOYSA-N 2-Methylheptane Chemical compound CCCCCC(C)C JVSWJIKNEAIKJW-UHFFFAOYSA-N 0.000 description 2
- RXGUIWHIADMCFC-UHFFFAOYSA-N 2-Methylpropyl 2-methylpropionate Chemical compound CC(C)COC(=O)C(C)C RXGUIWHIADMCFC-UHFFFAOYSA-N 0.000 description 2
- CETWDUZRCINIHU-UHFFFAOYSA-N 2-heptanol Chemical compound CCCCCC(C)O CETWDUZRCINIHU-UHFFFAOYSA-N 0.000 description 2
- ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 2-octanone Chemical compound CCCCCCC(C)=O ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 0.000 description 2
- KUMXLFIBWFCMOJ-UHFFFAOYSA-N 3,3-dimethylhexane Chemical compound CCCC(C)(C)CC KUMXLFIBWFCMOJ-UHFFFAOYSA-N 0.000 description 2
- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 description 2
- LAIUFBWHERIJIH-UHFFFAOYSA-N 3-Methylheptane Chemical compound CCCCC(C)CC LAIUFBWHERIJIH-UHFFFAOYSA-N 0.000 description 2
- HCFAJYNVAYBARA-UHFFFAOYSA-N 4-heptanone Chemical compound CCCC(=O)CCC HCFAJYNVAYBARA-UHFFFAOYSA-N 0.000 description 2
- FFWSICBKRCICMR-UHFFFAOYSA-N 5-methyl-2-hexanone Chemical compound CC(C)CCC(C)=O FFWSICBKRCICMR-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical group C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- RZKSECIXORKHQS-UHFFFAOYSA-N Heptan-3-ol Chemical compound CCCCC(O)CC RZKSECIXORKHQS-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 159000000032 aromatic acids Chemical class 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- XUPYJHCZDLZNFP-UHFFFAOYSA-N butyl butanoate Chemical compound CCCCOC(=O)CCC XUPYJHCZDLZNFP-UHFFFAOYSA-N 0.000 description 2
- NMJJFJNHVMGPGM-UHFFFAOYSA-N butyl formate Chemical compound CCCCOC=O NMJJFJNHVMGPGM-UHFFFAOYSA-N 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 125000005708 carbonyloxy group Chemical group [*:2]OC([*:1])=O 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
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- 238000004140 cleaning Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 150000002009 diols Chemical class 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000004210 ether based solvent Substances 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- QNVRIHYSUZMSGM-UHFFFAOYSA-N hexan-2-ol Chemical compound CCCCC(C)O QNVRIHYSUZMSGM-UHFFFAOYSA-N 0.000 description 2
- ZOCHHNOQQHDWHG-UHFFFAOYSA-N hexan-3-ol Chemical compound CCCC(O)CC ZOCHHNOQQHDWHG-UHFFFAOYSA-N 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical group CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- RGFNRWTWDWVHDD-UHFFFAOYSA-N isobutyl butyrate Chemical compound CCCC(=O)OCC(C)C RGFNRWTWDWVHDD-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- TZIHFWKZFHZASV-UHFFFAOYSA-N methyl formate Chemical compound COC=O TZIHFWKZFHZASV-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- VKCYHJWLYTUGCC-UHFFFAOYSA-N nonan-2-one Chemical compound CCCCCCCC(C)=O VKCYHJWLYTUGCC-UHFFFAOYSA-N 0.000 description 2
- BKIMMITUMNQMOS-UHFFFAOYSA-N nonane Chemical compound CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- SJWFXCIHNDVPSH-UHFFFAOYSA-N octan-2-ol Chemical compound CCCCCCC(C)O SJWFXCIHNDVPSH-UHFFFAOYSA-N 0.000 description 2
- NMRPBPVERJPACX-UHFFFAOYSA-N octan-3-ol Chemical compound CCCCCC(O)CC NMRPBPVERJPACX-UHFFFAOYSA-N 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- 239000003791 organic solvent mixture Substances 0.000 description 2
- KJIFKLIQANRMOU-UHFFFAOYSA-N oxidanium;4-methylbenzenesulfonate Chemical compound O.CC1=CC=C(S(O)(=O)=O)C=C1 KJIFKLIQANRMOU-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- JYVLIDXNZAXMDK-UHFFFAOYSA-N pentan-2-ol Chemical compound CCCC(C)O JYVLIDXNZAXMDK-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- MIOPJNTWMNEORI-GMSGAONNSA-N (S)-camphorsulfonic acid Chemical compound C1C[C@@]2(CS(O)(=O)=O)C(=O)C[C@@H]1C2(C)C MIOPJNTWMNEORI-GMSGAONNSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 1
- LFNVRNWBMJBTKZ-UHFFFAOYSA-N 1-fluorohexan-1-ol Chemical compound CCCCCC(O)F LFNVRNWBMJBTKZ-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- XZJPYETUABEQFI-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7-dodecafluorooctane-1,8-diol Chemical compound OCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CO XZJPYETUABEQFI-UHFFFAOYSA-N 0.000 description 1
- NHEKBXPLFJSSBZ-UHFFFAOYSA-N 2,2,3,3,4,4,5,5-octafluorohexane-1,6-diol Chemical compound OCC(F)(F)C(F)(F)C(F)(F)C(F)(F)CO NHEKBXPLFJSSBZ-UHFFFAOYSA-N 0.000 description 1
- JUGSKHLZINSXPQ-UHFFFAOYSA-N 2,2,3,3,4,4,5,5-octafluoropentan-1-ol Chemical compound OCC(F)(F)C(F)(F)C(F)(F)C(F)F JUGSKHLZINSXPQ-UHFFFAOYSA-N 0.000 description 1
- FCEUVAQYYKMPRC-UHFFFAOYSA-N 2,2,3,3,4,4-hexafluorobutan-1-ol Chemical compound OCC(F)(F)C(F)(F)C(F)F FCEUVAQYYKMPRC-UHFFFAOYSA-N 0.000 description 1
- IELVMUPSWDZWSD-UHFFFAOYSA-N 2,2,3,3,4,4-hexafluoropentane-1,5-diol Chemical compound OCC(F)(F)C(F)(F)C(F)(F)CO IELVMUPSWDZWSD-UHFFFAOYSA-N 0.000 description 1
- JSYPKJNNVLFEHT-UHFFFAOYSA-N 2,2-dioxo-1,4,2,3-dioxathiazolidin-5-one Chemical compound O=C1ONS(=O)(=O)O1 JSYPKJNNVLFEHT-UHFFFAOYSA-N 0.000 description 1
- RLPGDEORIPLBNF-UHFFFAOYSA-N 2,3,4-trimethylpentane Chemical compound CC(C)C(C)C(C)C RLPGDEORIPLBNF-UHFFFAOYSA-N 0.000 description 1
- TUIWMHDSXJWXOH-UHFFFAOYSA-N 2,5-dimethylhexan-3-one Chemical compound CC(C)CC(=O)C(C)C TUIWMHDSXJWXOH-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- QNVRIHYSUZMSGM-LURJTMIESA-N 2-Hexanol Natural products CCCC[C@H](C)O QNVRIHYSUZMSGM-LURJTMIESA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 1
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- GYNXTHOOAGYMOK-UHFFFAOYSA-N 2-hydroxybutanediamide Chemical compound NC(=O)CC(O)C(N)=O GYNXTHOOAGYMOK-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- NMRPBPVERJPACX-QMMMGPOBSA-N 3-Octanol Natural products CCCCC[C@@H](O)CC NMRPBPVERJPACX-QMMMGPOBSA-N 0.000 description 1
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Images
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
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Description
デスカミング組成物での使用に好ましい酸としては、脂肪族および芳香族構造が挙げられる。芳香族酸は、好ましくは、フェニル、ビフェニル、ナフチル、アントラセニル、チオフェンまたはフラン基を含む。適した酸としては、次の式(I)〜(VII)の酸が挙げられる:
上式で:R0は線状、所望により例えば、フッ素原子またはヒドロキシ基で置換されている、1〜30個の炭素原子、好ましくは1〜15個の炭素原子を有する分枝状または環状アルキル基であり;かつ、Aは、一重結合、エーテル基、チオエーテル基、カルボニル基、エステル基、アミド基、スルホンアミド基、ウレタン基、尿素基、所望により例えばフッ素原子またはヒドロキシ基で置換されているアルキレン基、またはそれらの組合せである;
上式で:R1は独立に、置換もしくは非置換C1−C20アルキル基、置換もしくは非置換C5−C20アリール基またはそれらの組合せを表し、所望によりカルボニル、カルボニルオキシ、スルホンアミド、エーテル、チオエーテル、置換もしくは非置換アルキレン基、またはそれらの組合せから選択される1またはそれ以上の基を含有し;Z1は独立に、カルボキシル、ヒドロキシ、ニトロ、シアノ、C1−C5アルコキシ、ホルミルおよびスルホン酸から選択される基を表し、;かつ、aおよびbは独立に、0〜5の整数であり;a+bは、5以下である;
上式で:R2およびR3は各々独立に、置換もしくは非置換C1−C20アルキル基、置換もしくは非置換C5−C16アリール基またはそれらの組合せを表し、所望によりカルボニル、カルボニルオキシ、スルホンアミド、エーテル、チオエーテル、置換もしくは非置換アルキレン基、またはそれらの組合せから選択される1またはそれ以上の基を含有し;Z2およびZ3は、各々独立に、カルボキシル、ヒドロキシ、ニトロ、シアノ、C1−C5アルコキシ、ホルミルおよびスルホン酸から選択される基を表し、;cおよびdは、独立に、0〜4の整数であり;c+dは、4以下であり;eおよびfは、独立に、0〜3の整数であり;かつ、e+fは、3以下である;
上式で:R4、R5およびR6は各々独立に、置換もしくは非置換C1−C20アルキル基、置換もしくは非置換C5−C12アリール基またはそれらの組合せを表し、所望によりカルボニル、カルボニルオキシ、スルホンアミド、エーテル、チオエーテル、置換もしくは非置換アルキレン基、またはそれらの組合せから選択される1またはそれ以上の基を含有し;Z4、Z5およびZ6は、各々独立に、カルボキシル、ヒドロキシ、ニトロ、シアノ、C1−C5アルコキシ、ホルミルおよびスルホン酸から選択される基を表し、;gおよびhは、独立に、0〜4の整数であり;g+hは、4以下であり;iおよびjは、独立に、0〜2の整数であり;i+jは、2以下であり;kおよびlは、独立に、0〜3の整数であり;かつ、k+lは、3以下である;
上式で:R4、R5およびR6は各々独立に、置換もしくは非置換C1−C20アルキル基、置換もしくは非置換C5−C12アリール基またはそれらの組合せを表し、所望によりカルボニル、カルボニルオキシ、スルホンアミド、エーテル、チオエーテル、置換もしくは非置換アルキレン基、またはそれらの組合せから選択される1またはそれ以上の基を含有し;Z4、Z5およびZ6は、各々独立に、カルボキシル、ヒドロキシ、ニトロ、シアノ、C1−C5アルコキシ、ホルミルおよびスルホン酸から選択される基を表し、;gおよびhは、独立に、0〜4の整数であり;g+hは、4以下であり;iおよびjは、独立に、0〜1の整数であり;i+jは、1以下であり;kおよびlは、独立に、0〜4の整数であり;かつ、k+lは、4以下である;
上式で:R7およびR8は各々独立に、置換もしくは非置換C1−C20アルキル基、置換もしくは非置換C5−C14アリール基またはそれらの組合せを表し、所望によりカルボニル、カルボニルオキシ、スルホンアミド、エーテル、チオエーテル、置換もしくは非置換アルキレン基、またはそれらの組合せから選択される1またはそれ以上の基を含有し;Z7およびZ8は、各々独立に、カルボキシル、ヒドロキシ、ニトロ、シアノ、C1−C5アルコキシ、ホルミルおよびスルホン酸から選択される基を表し、;mおよびnは、独立に、0〜5の整数であり;m+nは、5以下であり;oおよびpは、独立に、0〜4の整数であり;かつ、o+pは、4以下である;および
上式で:Xは、OまたはSであり;R9は、独立に、置換もしくは非置換C1−C20アルキル基、置換もしくは非置換C5−C20アリール基またはそれらの組合せを表し、所望によりカルボニル、カルボニルオキシ、スルホンアミド、エーテル、チオエーテル、置換もしくは非置換アルキレン基、またはそれらの組合せから選択される1またはそれ以上の基を含有し;Z9は、独立に、カルボキシル、ヒドロキシ、ニトロ、シアノ、C1−C5アルコキシ、ホルミルおよびスルホン酸から選択される基を表し、;qおよびrは、独立に、0〜3の整数であり;かつ、q+rは、3以下である。前述の構造に関して、R1〜R9基が所望によりそれらのそれぞれの会合する環とともに縮合構造を形成することができることは明らかであるはずである。
実施例1:PDC−1
2.167gのメタクリル酸n−ブチル/メタクリル酸の共重合体(重量比77/23)、0.033gのp−トルエンスルホン酸一水和物、および97.8gの4−メチル−2−ペンタノールを、すべての成分が溶解するまで一緒に混合した。得られる混合物を0.2μmナイロンフィルタで濾過した。
2.143gのメタクリル酸n−ブチル/メタクリル酸の共重合体(重量比77/23)、0.057gのドデシルベンゼンスルホン酸、および97.8gの4−メチル−2−ペンタノールを、すべての成分が溶解するまで一緒に混合した。得られる混合物を0.2μmナイロンフィルタで濾過した。
2.160gのメタクリル酸n−ブチル/メタクリル酸の共重合体(重量比77/23)、0.04gのカンファスルホン酸、および97.8gの4−メチル−2−ペンタノールを、すべての成分が溶解するまで一緒に混合した。得られる混合物を0.2μmナイロンフィルタで濾過した。
2.148gのメタクリル酸n−ブチル/メタクリル酸の共重合体(重量比77/23)、0.052gのパーフルオロブタンスルホン酸、および97.8gの4−メチル−2−ペンタノールを、すべての成分が溶解するまで一緒に混合した。得られる混合物を0.2μmナイロンフィルタで濾過した。
2.162gのメタクリル酸n−ブチル/メタクリル酸の共重合体(重量比77/23)、0.033gのp−トルエンスルホン酸(Sulfonic sulfonic acid)、0.006gのPF 656界面活性剤および97.8gの4−メチル−2−ペンタノールを、すべての成分が溶解するまで一緒に混合した。得られる混合物を0.2μmナイロンフィルタで濾過した。
2.162gのメタクリル酸n−ブチル/メタクリル酸の共重合体(重量比77/23)、0.033gのp−トルエンスルホン酸(Sulfonic sulfonic acid)、0.006gのサーフィノール420界面活性剤を、すべての成分が溶解するまで一緒に混合した。得られる混合物を0.2μmナイロンフィルタで濾過した。
実施例7(比較用)
EPIC 2096 ArFフォトレジスト(Rohm and Haas Electronic Materials LLC,Marlborough,MA)を、TEL Clean Track Lithius i+(Tel Clean Track)で、有機底部反射防止コーティング(BARC)二重層(AR(商標)137 20nm/AR(商標)26N 76nm)を被覆した12インチシリコンウエハの上方でスピンコーティングし、ウエハを120℃で60秒間ソフトベーク(SB)した。30nm厚さのOC(商標)2000トップコート層(Rohm and Haas Electronic Materials)を、TEL Clean Trackでフォトレジスト層の上方に適用し、90℃で60秒間ベークした。被覆されたウエハを、NA=1.35、x偏光のDipole 35Y照明(0.9/0.76シグマ)でASML ArF 1900iで露光し、その後95℃で60秒間露光後ベーク(PEB)した。被覆されたウエハを、Tel Lithus GP ノズルによって0.26N(規定)TMAH水溶液で12秒間処理して、140nm 1:1のトレンチを形成した。140nm トレンチに対する限界寸法(CD)測定を、Hitachi CG 4000 SEMで行い、20mJ/cm2でSEMによって生成した画像を用いてスカムの存在および相対量を視覚的に検査した。観察したスカムの相対量を、次の通り、最小から最大までのスケールに分類した:スカムなし(視覚によって検出されるスカムの不在)<少量のスカム<中程度のスカム<大量のスカム。大量のスカムの存在は、形成されたレジストパターン化ウエハに観察された。
実施例1〜6の各々のデスカミング組成物の600Åの厚層を、TEL Clean Trackを用いて、実施例8で形成されたそれぞれのパターン化ウエハの上方にスピンコーティングした。ウエハを70℃で60秒間ベークし、Clean Trackで2.38%TMAH現像液リンス剤中で30秒間すすぎ、水ですすいだ。140nmトレンチの限界寸法(CD)測定をHitachi CG 4000 SEMで行い、スカムの存在および量を20mJ/cm2で調べた。結果を表1に示す。
実施例9
実施例9〜15のウエハを、BF3源を用いて、B11(1014原子/cm2、40keV)でイオン注入する。
Claims (9)
- 半導体デバイスにおいてイオン注入領域を形成する方法であって、
(a)イオン注入されるべき複数の領域を有する半導体基板を準備する段階と;
(b)フォトレジストパターンを半導体基板に形成する段階であって、前記フォトレジストパターンが、酸不安定基を有するマトリックスポリマー、光酸発生剤および溶媒を含む化学増幅型フォトレジスト組成物から形成される、段階と;
(c)デスカミング組成物をフォトレジストパターンの上方に被覆する段階であって、前記デスカミング組成物が:水不溶性のマトリックスポリマー;遊離酸;および溶媒を含む、段階と;
(d)前記被覆された半導体基板を加熱する段階と;
(e)前記被覆された半導体基板とリンス剤を接触させて残りのデスカミング組成物およびスカムを前記基板から除去する段階と;
(f)前記フォトレジストパターンを注入マスクとして用いて前記半導体基板の複数の領域をイオン注入する段階と
を含む、方法。 - 前記遊離酸が芳香族酸である、請求項1記載の方法。
- 前記遊離酸が非芳香族酸である、請求項1記載の方法。
- 前記デスカミング組成物の前記溶媒が、有機溶媒を含む、請求項1〜3のいずれか一項記載の方法。
- 前記リンス剤が、アルカリ水溶液である、請求項1〜4のいずれか一項記載の方法。
- 前記リンス剤が有機溶媒または溶媒混合物を含む、請求項1〜4のいずれか一項記載の方法。
- 前記リンス剤が水をさらに含む、請求項6記載の方法。
- 前記デスカミング組成物の前記マトリックスポリマーが、−OH、−COOH、−SO3H、−SiOH、ヒドロキシルスチレン、ヒドロキシルナフタレン、スルホンアミド、ヘキサフルオロイソプロピルアルコール、無水物、ラクトン、エステル、エーテル、アリルアミン、ピロリドンおよびそれらの組合せから選択される官能基を含む、請求項1〜7のいずれか一項記載の方法。
- 前記フォトレジストパターンを形成する段階が、フォトレジストパターンと同時に露光され現像される現像可能な底部反射防止層の上方に前記フォトレジスト組成物の層を被覆することを含む、請求項1〜8のいずれか一項記載の方法。
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