JP2011227448A5 - - Google Patents

Download PDF

Info

Publication number
JP2011227448A5
JP2011227448A5 JP2010279128A JP2010279128A JP2011227448A5 JP 2011227448 A5 JP2011227448 A5 JP 2011227448A5 JP 2010279128 A JP2010279128 A JP 2010279128A JP 2010279128 A JP2010279128 A JP 2010279128A JP 2011227448 A5 JP2011227448 A5 JP 2011227448A5
Authority
JP
Japan
Prior art keywords
photoresist
exposure
photoacid
photoacid labile
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010279128A
Other languages
English (en)
Japanese (ja)
Other versions
JP5753681B2 (ja
JP2011227448A (ja
Filing date
Publication date
Application filed filed Critical
Publication of JP2011227448A publication Critical patent/JP2011227448A/ja
Publication of JP2011227448A5 publication Critical patent/JP2011227448A5/ja
Application granted granted Critical
Publication of JP5753681B2 publication Critical patent/JP5753681B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2010279128A 2009-12-15 2010-12-15 フォトレジストおよびその使用方法 Active JP5753681B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28675609P 2009-12-15 2009-12-15
US61/286756 2009-12-15

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015048537A Division JP6121464B2 (ja) 2009-12-15 2015-03-11 フォトレジストおよびその使用方法

Publications (3)

Publication Number Publication Date
JP2011227448A JP2011227448A (ja) 2011-11-10
JP2011227448A5 true JP2011227448A5 (enExample) 2015-05-07
JP5753681B2 JP5753681B2 (ja) 2015-07-22

Family

ID=43752182

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2010279128A Active JP5753681B2 (ja) 2009-12-15 2010-12-15 フォトレジストおよびその使用方法
JP2015048537A Active JP6121464B2 (ja) 2009-12-15 2015-03-11 フォトレジストおよびその使用方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2015048537A Active JP6121464B2 (ja) 2009-12-15 2015-03-11 フォトレジストおよびその使用方法

Country Status (6)

Country Link
US (2) US8815754B2 (enExample)
EP (1) EP2336827B1 (enExample)
JP (2) JP5753681B2 (enExample)
KR (1) KR101877360B1 (enExample)
CN (1) CN102201333B (enExample)
TW (1) TWI468865B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5776580B2 (ja) * 2011-02-25 2015-09-09 信越化学工業株式会社 ポジ型レジスト材料及びこれを用いたパターン形成方法
CN110095941B (zh) * 2011-12-26 2023-02-17 东丽株式会社 感光性树脂组合物和半导体元件的制造方法
MY174577A (en) * 2013-12-26 2020-04-28 Asahi Chemical Ind Photosensitive resin composition and photosensitive resin laminate
US10365322B2 (en) 2016-04-19 2019-07-30 Analog Devices Global Wear-out monitor device
US10677822B2 (en) 2016-09-27 2020-06-09 Analog Devices Global Unlimited Company Electrical overstress detection device
US11112436B2 (en) 2018-03-26 2021-09-07 Analog Devices International Unlimited Company Spark gap structures for detection and protection against electrical overstress events
CN109164685B (zh) * 2018-09-26 2022-06-28 珠海雅天科技有限公司 一种euv光刻胶及其制备方法与应用

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4564575A (en) * 1984-01-30 1986-01-14 International Business Machines Corporation Tailoring of novolak and diazoquinone positive resists by acylation of novolak
US4968581A (en) 1986-02-24 1990-11-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers
US4810613A (en) 1987-05-22 1989-03-07 Hoechst Celanese Corporation Blocked monomer and polymers therefrom for use as photoresists
DE3721741A1 (de) 1987-07-01 1989-01-12 Basf Ag Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien
EP0366590B2 (en) 1988-10-28 2001-03-21 International Business Machines Corporation Highly sensitive positive photoresist compositions
DE4112970A1 (de) 1991-04-20 1992-10-22 Hoechst Ag Saeurespaltbare strahlungsempfindliche verbindungen, diese enthaltendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
US5186383A (en) 1991-10-02 1993-02-16 Motorola, Inc. Method for forming solder bump interconnections to a solder-plated circuit trace
DE69322946T2 (de) 1992-11-03 1999-08-12 International Business Machines Corp., Armonk, N.Y. Photolackzusammensetzung
EP0893514B1 (en) 1996-01-30 2003-04-02 Naganoken Tin-silver alloy plating solution and method of plating with said plating solution
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US5861231A (en) 1996-06-11 1999-01-19 Shipley Company, L.L.C. Copolymers and photoresist compositions comprising copolymer resin binder component
US6099713A (en) 1996-11-25 2000-08-08 C. Uyemura & Co., Ltd. Tin-silver alloy electroplating bath and tin-silver alloy electroplating process
JPH10254137A (ja) * 1997-03-11 1998-09-25 Nec Corp 化学増幅系レジスト
KR100219806B1 (ko) 1997-05-27 1999-09-01 윤종용 반도체장치의 플립 칩 실장형 솔더 범프의 제조방법, 이에 따라 제조되는 솔더범프 및 그 분석방법
US5990564A (en) 1997-05-30 1999-11-23 Lucent Technologies Inc. Flip chip packaging of memory chips
US6057083A (en) 1997-11-04 2000-05-02 Shipley Company, L.L.C. Polymers and photoresist compositions
US6365321B1 (en) * 1999-04-13 2002-04-02 International Business Machines Corporation Blends of hydroxystyrene polymers for use in chemically amplified positive resist formulations
US6890448B2 (en) * 1999-06-11 2005-05-10 Shipley Company, L.L.C. Antireflective hard mask compositions
US6638847B1 (en) 2000-04-19 2003-10-28 Advanced Interconnect Technology Ltd. Method of forming lead-free bump interconnections
US6593182B2 (en) * 2001-03-19 2003-07-15 Macronix International Co., Ltd. Method for forming multiple gate oxide layer with the plasma oxygen doping
KR100393230B1 (ko) * 2001-08-16 2003-07-31 삼성전자주식회사 잔막율을 조절할 수 있는 포토레지스트 패턴의 형성방법
WO2004092831A2 (en) * 2003-04-09 2004-10-28 Rohm And Haas, Electronic Materials, L.L.C. Photoresists and methods for use thereof
JP4570910B2 (ja) * 2004-06-08 2010-10-27 東京応化工業株式会社 重合体およびポジ型レジスト組成物
US7433004B2 (en) * 2004-06-11 2008-10-07 Sharp Kabushiki Kaisha Color filter substrate, method of making the color filter substrate and display device including the color filter substrate
US20060172223A1 (en) * 2004-11-24 2006-08-03 Rohm And Haas Electronic Materials Llc Photoresist compositions
JP4789599B2 (ja) * 2004-12-06 2011-10-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フォトレジスト組成物
US7081327B2 (en) 2004-12-29 2006-07-25 Tokyo Ohka Kogyo Co., Ltd. Chemically amplified positive photoresist composition for thick film, thick-film photoresist laminated product, manufacturing method for thick-film resist pattern, and manufacturing method for connection terminal
JP4533756B2 (ja) * 2005-01-07 2010-09-01 富士フイルム株式会社 イオン注入工程用ポジ型レジスト組成物及びそれを用いたイオン注入方法
JP5047502B2 (ja) * 2005-01-19 2012-10-10 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 樹脂混合物を含むフォトレジスト組成物
JP4663459B2 (ja) * 2005-09-07 2011-04-06 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
WO2008023750A1 (fr) * 2006-08-24 2008-02-28 Jsr Corporation Procédé d'implantation d'ions et composition de résine sensible au rayonnement pour une utilisation dans celui-ci
JP4798027B2 (ja) * 2007-01-18 2011-10-19 Ｊｓｒ株式会社 イオンインプランテーション用感放射線性樹脂組成物、及びイオンインプランテーション用パターン形成方法
JP5032362B2 (ja) * 2007-03-12 2012-09-26 ローム アンド ハース カンパニー ヒドロキシフェニルアクリレート系モノマーおよびポリマー
TWI460535B (zh) * 2007-03-12 2014-11-11 羅門哈斯電子材料有限公司 酚系聚合物及含該酚系聚合物之光阻
JP2009063823A (ja) * 2007-09-06 2009-03-26 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物、積層体およびパターン形成方法

Similar Documents

Publication Publication Date Title
JP2011186432A5 (enExample)
JP2011227448A5 (enExample)
JP2019163463A5 (enExample)
JP5590364B2 (ja) フォトレジスト剥離液組成物
JP2016189006A5 (enExample)
JP2008309878A5 (enExample)
JP2014149409A5 (enExample)
JP2010503016A5 (enExample)
JP2014143415A5 (enExample)
JP2014071424A5 (enExample)
MY198993A (en) Photosensitive resin composition and method for forming circuit pattern
JP2014164177A5 (enExample)
JP6048679B2 (ja) ポリマー含有現像液
JP2010152343A5 (enExample)
JP2006350325A5 (enExample)
US11168288B2 (en) Photoresist remover compositions
KR20180018359A (ko) 반도체용 레지스트 하층막 형성 조성물, 레지스트 하층막, 레지스트 하층막의 형성 방법 및 패터닝 기판의 제조 방법
JP2019020701A (ja) 半導体用レジスト下層膜形成組成物、レジスト下層膜、レジスト下層膜の形成方法及びパターニング基板の製造方法
JP2009115835A5 (enExample)
WO2012142126A3 (en) Method of making radiation-sensitive sol-gel materials
EP3743773B1 (en) Photoresist remover compositions
JP2015121816A5 (enExample)
ATE533833T1 (de) Wässrige reinigungszusammensetzung und verwendungsmethode
KR101733729B1 (ko) 포토레지스트 박리액 조성물 및 이를 이용한 포토레지스트 박리 방법
JP2011175241A5 (enExample)