WO2008023750A1 - Procédé d'implantation d'ions et composition de résine sensible au rayonnement pour une utilisation dans celui-ci - Google Patents

Procédé d'implantation d'ions et composition de résine sensible au rayonnement pour une utilisation dans celui-ci Download PDF

Info

Publication number
WO2008023750A1
WO2008023750A1 PCT/JP2007/066318 JP2007066318W WO2008023750A1 WO 2008023750 A1 WO2008023750 A1 WO 2008023750A1 JP 2007066318 W JP2007066318 W JP 2007066318W WO 2008023750 A1 WO2008023750 A1 WO 2008023750A1
Authority
WO
WIPO (PCT)
Prior art keywords
group
radiation
acid
ion implantation
resin composition
Prior art date
Application number
PCT/JP2007/066318
Other languages
English (en)
Japanese (ja)
Inventor
Tomohiro Utaka
Tooru Takamiya
Takanori Kawakami
Original Assignee
Jsr Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corporation filed Critical Jsr Corporation
Priority to JP2008530946A priority Critical patent/JP4905811B2/ja
Publication of WO2008023750A1 publication Critical patent/WO2008023750A1/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching

Definitions

  • the present invention relates to an ion implantation method and a radiation-sensitive resin composition used therefor, and in particular, far ultraviolet rays having a wavelength of 200 nm or less, such as Ar F excimer laser or F 2 excimer laser, and electron beam (EB ), Etc., and a radiation sensitive resin composition suitable as a chemically amplified resist used in the ion implantation method.
  • a radiation-sensitive resin composition used therefor, and in particular, far ultraviolet rays having a wavelength of 200 nm or less, such as Ar F excimer laser or F 2 excimer laser, and electron beam (EB ), Etc.
  • Patent Document 4 Furthermore, by adding a phenolic compound to a radiation-sensitive resin composition comprising a (meth) acrylic acid polymer having an acid-dissociable functional group and an acid generator, the solubility of the exposed portion and It is described that the efficiency of acid generation from an acid generator is increased (Patent Document 4).
  • these photoresist resist compositions are usually reflected as a resist underlayer in order to suppress the effects of diffuse reflection of actinic rays from the substrate and standing waves generated by incident and reflected light. Used on a substrate coated with a protective film.
  • a protective film used on a substrate coated with a protective film.
  • a specific (one lower alkyl) acrylate copolymer is used as a resin component whose real force resolubility increases by the action of an acid.
  • the resist layer used in the ion plantation process is usually used as a thick film with a thickness of 1.0 to 1.5 m, taking into account the ion barrier properties in the ion implantation process and the fracture resistance of the resist ⁇ pattern.
  • Patent Document 5 since it is not necessary to form an antireflection film by forming a thick resist layer, it is effective for an ion implantation method that does not use an antireflection film.
  • the above-mentioned Ar F excimer laser (wavelength 1 93 nm), F 2 excimer laser (wavelength 15 7 nm), etc.
  • the resist layer is not formed.
  • a chemically amplified radiation-sensitive resin composition that still has excellent ion blocking properties and resist ⁇ fracture resistance even when thinned. Since the resist is not sufficiently resistant to damage, the present situation is that a sufficient radiation-sensitive resin composition that satisfies this requirement has not yet been obtained.
  • Patent Document 1 Japanese Patent Laid-Open No. 2 0 0 2-2 0 1 2 3 2
  • Patent Document 2 Japanese Patent Laid-Open No. 2 0 0 2— 1 4 5 9 5 5
  • Patent Document 3 Japanese Laid-Open Patent Publication No. 2 0 0 3— 8 4 4 3 6
  • Patent Document 4 Japanese Patent Laid-Open No. 2 0 0 3-3 2 2 9 6 3
  • Patent Document 5 Japanese Laid-Open Patent Publication No. 2 0 0 5-3 1 6 1 3 6 Disclosure of Invention
  • the present invention has been made in view of the circumstances as described above, and in the ion implantation method, a radiation-sensitive resin composition having excellent ion blocking properties and resist destructive resistance even for a thin film. It is an object of the present invention to provide an ion implantation method capable of reducing the thickness of a resist layer and a radiation-sensitive resin composition used therefor. Means for solving the problem
  • the present inventors use a radiation-sensitive resin composition to which a low molecular compound having a phenyl group that does not generate a new acid by irradiation with radiation is added. As a result, it was found that an ion implantation method using a resist layer having a film thickness of less than 1.0 m becomes possible.
  • the present invention has been completed based on the findings, and is as follows.
  • (1) (A) a (meth) acrylic acid ester resin containing an acid dissociable group that becomes soluble in real color upon dissociation of the acid dissociable group, (B) a compound that generates an acid upon irradiation with radiation, and (C) A resist having a film thickness of less than 1.0 jum on a substrate using a radiation sensitive resin composition containing a low molecular weight compound having a phenyl group that does not generate new acid upon irradiation.
  • Forming a layer selectively exposing the resist layer, re-developing the resist to form a resist pattern, and then performing ion implantation using the resist pattern as a mask
  • An ion implantation method characterized by
  • R represents a hydrogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms
  • each R 2 is independently a linear or branched alkyl group having 1 to 4 carbon atoms.
  • a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms that may be substituted, or any two R 2 's bonded to each other and substituted together with the carbon atom to which each is bonded.
  • Forming a divalent alicyclic hydrocarbon group having 4 to 20 carbon atoms, and the remaining R 2 is a linear or branched alkyl group having 1 to 4 carbon atoms or an optionally substituted carbon number 4 to 20 monovalent alicyclic hydrocarbon groups.
  • a radiation-sensitive resin composition for ion implantation comprising a low-molecular compound.
  • R represents a hydrogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms
  • each R 2 independently represents a linear or branched alkyl group having 1 to 4 carbon atoms.
  • a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms that may be substituted, or any two R2s bonded to each other and substituted together with the carbon atom to which each is bonded
  • Forming a divalent alicyclic hydrocarbon group having 4 to 20 carbon atoms and the remaining R 2 may be a linear or branched alkyl group having 1 to 4 carbon atoms or substituted It is a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms.
  • the ion implantation method of the present invention and the radiation-sensitive resin composition used therefor have the above-described configuration, so that the formed resist layer has sensitivity, even when an antireflection film is not applied to the substrate.
  • the formed resist layer has sensitivity, even when an antireflection film is not applied to the substrate.
  • it has excellent ion barrier properties and resist despite its thin film thickness of less than 1.0 m. It has destructive resistance.
  • the ion plantation method is a method in which the target substance is ionized, electrostatically accelerated, and injected into a solid (a thin film on a substrate). Specifically, a radiation-sensitive resin composition is used. A resist layer is formed on the substrate, the resist layer is selectively exposed, and a resist pattern is formed by alkali development. Then, the resist pattern is used as a mask. Ion implantation (ion implantation) is performed.
  • the present invention includes (A) an acid-dissociable group that becomes soluble in alkali by the dissociation of an acid-dissociable group, as a radiation-sensitive resin composition for forming a resist layer in the ion implantation method.
  • the (meth) acrylic acid ester resin containing an acid dissociable group which becomes soluble by the dissociation of an acid dissociable group, which is a component (A) in the present invention is a polar functional group having an affinity with an aqueous alkaline solution.
  • Resin (A) At least a part of the hydrogen atom of the resin is substituted with a protecting group that is easily removed by the action of an acid, and as such is insoluble or hardly soluble in alkaline aqueous solution (hereinafter also referred to as “resin (A)”) It is.
  • an alkali-insoluble or sparingly soluble resin means that the residual film of the film is 50% of the original after it has been developed under the standard Al re-development conditions used when developing a resist pattern. This means the above properties.
  • Resin (A) in the present invention is not only Ar r excimer laser,
  • the resin (A) is preferably an alkali-insoluble resin having at least one selected from repeating units represented by the following general formula (I).
  • R 1 represents a hydrogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms
  • each R 2 is independently a linear or branched alkyl group having 1 to 4 carbon atoms.
  • a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms that may be substituted, or any two R 2 's bonded to each other and substituted together with the carbon atom to which each is bonded.
  • Forming a divalent alicyclic hydrocarbon group having 4 to 20 carbon atoms, and the remaining R 2 is a linear or branched alkyl group having 1 to 4 carbon atoms or an optionally substituted carbon It is a monovalent alicyclic hydrocarbon group having a number of 4 to 20.
  • R 1 is preferably a hydrogen atom or a methyl group.
  • the proportion of the general formula (I) is a hydrogen atom is preferably in the range of 1 0-7 0 mol% relative to the total repetition units, more in the range of 1 0-5 0 mol 0 preferable. This is because when the proportion of R, which is a hydrogen atom is less than 10 mol%, the inhibitory effect on defects such as cracking and peeling is insufficient, and when it exceeds 70 mol%, sufficient resolution is achieved.
  • repeating units in resin (A) include, for example, norbornene (bicyclo [2.2.1] hept-2-ene), 5-methylbicyclo [2.2.1] hept-2-ene, 5-Ethylbicyclo [2. 2. 1] hept-2-ene, 5-Hydroxybicyclo [2. 2. 1] Hep-2-ene, 5-Fluorobicyclo [2. 2. 1] heptoe 2—Yen, Te ⁇ Lacyclo
  • the resin (A) of the present invention is naturally low in impurities such as halogen and metal, and the residual monomer and oligomer components are not more than the predetermined values, for example, HP is 0.1% by weight, etc. Therefore, it can be used as a resist ⁇ ⁇ that not only improves the sensitivity, resolution, process stability, pattern shape, etc. of the resist, but also does not change over time such as foreign matter in liquid or sensitivity.
  • a radiation sensitive composition is obtained.
  • Examples of the purification method of the resin (A) of the present invention include the following methods.
  • the metal is made in a chelate state by adsorbing the metal in the resin solution using a zeta potential filter or by washing the resin solution with an acidic aqueous solution such as oxalic acid or sulfonic acid.
  • an acidic aqueous solution such as oxalic acid or sulfonic acid.
  • a liquid-liquid extraction method that removes residual monomer and oligomer components by combining water washing and an appropriate solvent, a specific molecular weight or less
  • ultrafiltration and other purification methods that extract and remove only the polymer, and residual polymer can be removed by coagulating the polymer in the poor solvent by dropping the polymer solution into the poor solvent.
  • Re-precipitation method to remove and poorly polymerized polymer slurry There is a purification method in a solid state such as washing with a medium. These methods can also be combined.
  • the poor solvent used in the reprecipitation method cannot be generally exemplified, depending on the physical properties of the polymer to be purified.
  • the polymer weight average molecular weight (hereinafter abbreviated as “Mw”) by gel permeation chromatography (GPC) of the polymer is usually 1,000 to 300,000, preferably 2,000 to 1 It is preferably 0,000, more preferably 3, 000 to 500,000.
  • Mw polymer weight average molecular weight
  • GPC gel permeation chromatography
  • the ratio (MwZM n) of the polymer Mw to the polystyrene-equivalent number average molecular weight (hereinafter abbreviated as “M n”) by gel permeation chromatography (GPC) is usually 1 to 5, preferably 1 to 3.
  • the resin (A) can be used alone or in admixture of two or more.
  • Resin (A) is alkali-insoluble or alkali-insoluble, but it becomes easily alkali-soluble by the action of acid. Therefore, it is suitable as an acid-dissociable group-containing resin used for a radiation-sensitive resin composition.
  • the resin (A) is used as an acid-dissociable group-containing resin, and (B) a radiation-sensitive resin composition by combining with a photoacid generator that is a component that generates phosphoric acid upon irradiation with actinic rays or radiation. Things are obtained.
  • Examples of the photoacid generator as component (B) in the present invention include ion salts such as sulfonium salt and sodium salt, organic halogen compounds, and sulfone compounds such as disulfones and diazomethane sulfones.
  • Preferable examples of the acid generator include ⁇ phenylsulfonyl trifluoromethanesulfonate, ⁇ phenylsulfonylnonafluor. Rho n-butanesulfone ⁇ , triphenylsulfone perfluorone n-octanesulfonate ⁇ ⁇ , triphenylsulfone 2-bicyclo
  • Hep 1-5 Yen-2,3-dicarboxyimide, N— (2-bicyclo [2.2.1] hept-2-yl, 1,1,2,2,2-tetrafluoroethanesulfonyloxy) bicyclo [2.2 1] Heptone 5--en 2.
  • 3-dicarboxyimide N— 2- (3-te Torashikuro [4.4.1 0.1 2 5.1 7 '10] dodeca Nyl) 1, 1 -Difluoroethanesulfonyloxy) Bicyclo [2.2.1] Hep ⁇ 1 5 _Yen 2, 3-Dicarboximide, ⁇ — (Camphor sulfonyloxy) Bicyclo [2.2 1] Bicyclo such as heptoh-5-ene-2,3-dicarboxyimide [2.2.1] heptoh-5-ene1-2,3-dicarboxyimide compounds.
  • the acid generators can be used alone or in admixture of two or more.
  • the amount of the acid generator used is usually 0.1 to 30 parts by weight, preferably 0.1 to 20 parts per 100 parts by weight of the polymer, from the viewpoint of ensuring the sensitivity and developability as Regis 10 Parts by weight. In this case, if the amount of the acid generator used is less than 0.1 part by weight, the sensitivity and developability tend to decrease. On the other hand, if the amount exceeds 30 parts by weight, the transparency to radiation decreases and a rectangular resist is produced. Tends to be difficult to obtain.
  • the radiation-sensitive resin composition of the present invention can be used in combination with a low molecular weight compound having a phenyl group that does not generate a new acid by light irradiation, which is component (C). 9 Absorption to 3 nm ultraviolet light can be adjusted.
  • Such a low molecular weight compound having a phenyl group does not particularly define the structure, but (C 1) a phenolic low molecular weight compound, (C 2) a low molecular weight compound having a naphthalene skeleton, (C 3) low molecular compounds having an anthracene skeleton, and the like.
  • the above (C 1) phenolic low molecular weight compound has a structure in which a benzene ring has a hydroxyl group and a molecular weight of 1 000 or less. From the absorption intensity at 19 3 nm, the number of benzene rings is 2 to 2 Preferred are 6 compounds. Specific examples of these (C 1) include those listed below.
  • a and b are independently integers of 0 to 3 (where ab is not 0 at the same time), X and y are independently integers of 0 to 3, and a + x ⁇ 5, b + y ⁇ 5.
  • a, b and c are independently integers of 0 to 3 (provided that a, b and c are not 0 at the same time), x, y and z are independently integers of 0 to 3 And a + x ⁇ 5, b + y ⁇ 5, c + z ⁇ 5.
  • a and b are each independently an integer of 1 to 3
  • R is independently a hydrogen atom or an alkyl group
  • X and y are independently an integer of 1 to 3.
  • a and ⁇ a 5 are independently a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 4 carbon atoms, and an alkoxy group having 1 to 4 carbon atoms.
  • a, ⁇ a 5 In each group of a 6 to a 10 and ai 1 to ai 5 , at least one is a hydroxyl group.
  • a and 6 to a 29 are each independently a hydrogen atom, a hydroxyl group, or an azoalkyl group having 1 to 4 carbon atoms. However, in each group of a 16 to a 19 , a 20 to a 24 .a 25 to 29
  • At least one is a hydroxyl group.
  • Preferred examples of the (C 1) phenol compound include the following compounds.
  • the low molecular weight compound having a (C 2) naphthalene skeleton has a structure having a naphthalene ring and a molecular weight of 1 000 or less. From the absorption intensity at 19 3 ⁇ m , the number of benzene rings is 2
  • the compounds of ⁇ 6 can be preferably mentioned. Specific examples of these (C 2) include those listed below.
  • a, b, c and d are integers of 0 to 4, and a and b are not 0 at the same time. And a + c ⁇ 4, and b + d ⁇ 4.
  • R and R 2 are each an alkyl group having 1 to 12 carbon atoms, an aryl group, an aralkyl group, or an acetyl group.
  • R 3 and R 4 are each an alkyl group having 1 to 12 carbon atoms, an aryl group, or an aralkyl group.
  • Each X is a single bond or an alkylene group having 1 to 12 carbon atoms.
  • a and b are 0 or 1, and a and b are not 0 at the same time.
  • c and d are integers from 0 to 4, a + c ⁇ 4 and b + d ⁇ 4.
  • R 1 R 2 and R 3 > R 4 are a hydrogen atom, an alkyl group having 1 to 12 carbon atoms, an aryl group, or an aralkyl group.
  • R 5 and R 6 are a hydrogen atom, an alkyl group having 1 to 12 carbon atoms, an aryl group or an aralkyl group.
  • X and Y are each a single bond or an alkylene group having 1 to 12 carbon atoms.
  • each ⁇ independently represents a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 4 carbon atoms, or a naphthyl group.
  • Preferred examples of the compound having the (C 2) naphthalene skeleton include the following compounds.
  • the low molecular weight compound having the (C 3) anthracene skeleton is an anthracene derivative having a molecular weight of 1,000 or less represented by the following formula (m).
  • e is preferably 0 or 1, particularly 0.
  • the monovalent organic group having 1 to 12 carbon atoms of R is, for example, a group — (CH 2 ) g — C ( ⁇ O) OH (where g is 0 to 3 And other monovalent organic groups described below.
  • g is preferably 0 or 1, particularly 0.
  • R other monovalent organic groups for R include, for example, methyl, ethyl, n-propyl, ⁇ -propyl, ⁇ -butyl, t-butyl, alkyl groups such as n-pentyl group, n-hexyl group, n-octyl group, n-decyl group, cyclopentyl group, cyclohexyl group; phenyl group, o-tolyl group, m-tolyl group, p-tolyl Group, 1 aryl group such as 1-naphthyl group;
  • Aralkyl groups such as benzyl group and phenethyl group
  • An alkoxyl group such as an oxy group, a ⁇ -talyloxy group, a ⁇ -decyloxy group, a cyclopentyloxy group, a cyclohexoxy group;
  • Aryloxy groups such as phenoxy group, ⁇ -triloxy group, m-triloxy group, p-triloxy group, 1-naphthyloxy group;
  • Aralkyloxy groups such as benzyloxy group and phenethyloxy group; methoxymethyl group, ethoxymethyl group, n-propoxymethyl group, i-propoxymethyl group, n-butoxymethyl group, t-butoxymethyl group, n-pentyloxymethyl group, n_ Alkoxymethyl groups such as hexyloxymethyl group, n-octyloxymethyl group, n-decyloxymethyl group, cyclopentyloxymethyl group, cyclohexyloxymethyl group; phenoxymethyl group, o-trioxymethyl An aryloxymethyl group such as a group, m-trioxymethyl group, p- ⁇ ryloxymethyl group, 1_naphthyloxymethyl group;
  • Aralkyloxymethyl groups such as benzyloxymethyl group and phenethyloxymethyl group
  • Methoxycarbonyl group ethoxycarbonyl group, n—propoxycarbonyl group, i—propoxycarbonyl group, n-butoxycarbonyl group, t-butoxycarbonyl group, n-pentyloxycarbonyl group, n—hexylo
  • An alkoxycarbonyl group such as a xycarbonyl group, an n-year-old oxycarbonyl group, an n-decyloxycarbonyl group, a cyclopentyloxycarbonyl group, a cyclohexyloxycarbonyl group;
  • An aryloxycarbonyl group such as a phenoxycarbonyl group, an o-trioxycarbonyl group, an m-trioxycarbonyl group, a p-alkyloxycarbonyl group, or a 1-naphthyloxycarbonyl group;
  • Aralkyloxycarbonyl groups such as benzyloxycarbonyl group and phenethyloxycarbonyl group
  • Examples thereof include aralkyloxycarbonylmethyl groups such as benzyloxycarbonylmethyl group and phenethyloxycarbonylmethyl group.
  • a hydrogen atom, a carboxyl group, a carboxymethyl group, a t-butoxycarbonylmethyl group, and the like are particularly preferable.
  • Specific examples of preferred (C 3) anthracene derivatives include anthracene-9 monostrept rubonic acid, anthracene mono 9,10-dicarboxylic acid, 10—strong l-poxymethylanthracene 9-carboxylic acid.
  • anthracene 9-power rubonic acid anthracene 9,10-dicarboxylic acid
  • 10-carboxy Methyl anthracene 9 _carboxylic acid 10-tert-butoxycarbonyl Methyl anthracene 9 9 strong rubonic acid, etc.
  • anthracene 9 9 strong ruponic acid anthracene 9, 10 0-dicarboxylic acid etc.
  • the radiation-sensitive resin composition of the present invention includes, as necessary, an acid diffusion controller, an alicyclic additive having an acid dissociable group, an alicyclic additive having no acid dissociable group, and a surfactant.
  • Various additives such as sensitizers can be blended.
  • the above acid diffusion control agent (hereinafter also referred to as ⁇ (D) component) controls the diffusion phenomenon in the resist film of the acid generated from the phosphoric acid generator upon irradiation, and undesired chemical reaction in the non-irradiated region. It is a component having the action of suppressing
  • the storage stability of the resulting radiation-sensitive resin composition is improved, the resolution as a resist ⁇ is further improved, and the processing from irradiation to development processing is also improved.
  • the change in the line width of the resist ⁇ pattern due to fluctuations in the holding time (PED) can be suppressed, and a composition excellent in process stability can be obtained.
  • the acid diffusion controller is preferably a nitrogen-containing organic compound whose basicity is not changed by irradiation or heat treatment during the formation process of the resist pattern.
  • Such nitrogen-containing organic compounds include (D 1) tertiary amine compounds, (D 2) amide group-containing compounds, (D 3) quaternary ammonium hydroxide compounds, (D 4) nitrogen-containing heterocycles. Compounds and the like.
  • Tertiary amine compounds include, for example, ⁇ ethylamine, n n-propylamine, tree n-butylamine, tree n-pentylamine, tri-n-hexylamine, tri-n-heptylamine.
  • Tri (cyclo) alkylamines such as n-trimethylamine, tri-nylamine, tri-n-decylamine, cyclohexyldimethylamine, dicyclohexylmethylamine, tricyclohexylamine;
  • Aniline N-methylaniline, N, N-dimethylaniline, 2-methyl
  • Aromatic amines such as ruaniline, 3-methylaniline, 4-methylaniline, 4-dinitroaniline, 2,6-dimethylaniline, 2,6-diisopropylaniline, diphenylamine, triphenylamine, naphthylamine;
  • Alkanolamines such as ethanolamine and diethanolaniline; N, N, N ', N'-tetramethylethylenediamine, N, N, N', ⁇ '-tetrakis (2-hydroxypropyl) )
  • Ethylenediamine 1,3-bis [1 — (4-aminophenyl) 1-
  • Examples of (D 2) amide group-containing compounds include: ⁇ -t-butoxycarbonyl n-octylamine, N-t-butoxycarbonyl n-nonylamine, N-t-butoxycarbonyl n- Decylamine, N—t monobutoxycarbonyldicyclohexylamine, N _ t —butoxycarbonyl-1- 1-adamantylamine, N—t mono-butoxycarbonyl 1-N-methyl-1- 1-adamantylamine, N 1, N —Gee t-butoxycarbonyl 1 —adamantylamine, N, N—di-t 1-butoxycarpone 2 N—Methyl- 1-adamantylamine, N _ t —butoxycarpyl 1,4'-diaminodiphe Dimethane, N, N'-di-tert-hydroxycarbonylhexamethylenediamine, N, N, N ', N'-tetra
  • the quaternary ammonium hydroxide compounds include, for example, tetramethylammonium hydroxide, tetramethylammonium hydroxide, tetra-n-propylammonium hydroxide, tetral n One ptylammonium hydroxide and the like.
  • Nitrogen-containing heterocyclic compounds include, for example, imidazole, 4 1-methyl imidazole, 1 1-benzyl 1-methylimidazole, 4-methyl-2-phenylimidazole, benzimidazole, 2-phenyl Imidazoles such as benzimidazole; pyridine, 2-methylpyridin, 4-methylpyridine, 2-ethyl pyridine, 4-monoethyl pyridine, 2_phenyl pyridine, 4-monophenyl pyridine, 2-methyl 4-phenyl pyridine, nicotine, Pyridines such as nicotinic acid, nicotinic acid amide, quinoline, 4-hydroxyquinoline, 8-oxyquinoline, and acridine; piperazine, 1 (2-hydroxykistil) piperine such as piperazine In addition to azines, pyrazine, pyrazole, pyridazine, quinosaline, purine, and pylori Emissions, piperidine,
  • Nt tert-butoxycarbonyl group-containing amino compounds are preferred, and among the nitrogen-containing heterocyclic compounds, imidazoles are preferred.
  • the above (D) acid diffusion controller can be used alone or in admixture of two or more.
  • the compounding amount of the acid diffusion control agent is usually 15 parts by weight or less, preferably 10 parts by weight or less, and more preferably 5 parts by weight or less with respect to 100 parts by weight of the acrylic polymer. In this case, if the amount of the acid diffusion control agent exceeds 15 parts by weight, the sensitivity as a resist and the developability of the radiation irradiated part tend to be lowered. If the amount of the acid diffusion controller is less than 0.01 part by weight, the pattern shape and dimensional fidelity as a resist may be lowered depending on the process conditions.
  • an alicyclic additive having an acid dissociable group or an alicyclic additive not having an acid dissociable group further improves dry etching resistance, pattern shape, adhesion to a substrate, and the like. It is a component which shows.
  • Examples of such alicyclic additives include 1-adamantane carboxylic acid t-butyl, 1-adamantane carboxylic acid t-butoxycarbonyl methyl, 1-adamantane carboxylic acid Ptylolactone ester, 1,3-Adamantanedicarboxylate di-t-butyl, 1-adamantane acetate t-butyl, 1-adamantane acetate t-butoxycarbonylmethyl, 1,3-adamantane diacetate di-t-butyl, 2,5- Adamantane derivatives such as dimethyl-2,5-di (adamantylcarbonyloxy) hexane; deoxycholic acid t — butyl, deoxycholic acid t _butoxycarbonylmethyl, deoxycholic acid 2-ethoxytyl, deoxycholic acid 2-cyclohexyloxy Quichetil, Deoxycholate 3-Oxo Deoxycholate esters such
  • alicyclic additives can be used alone or in admixture of two or more.
  • the amount of the alicyclic additive is usually 50 parts by weight or less, preferably 30 parts by weight or less, based on 100 parts by weight of the acryl-based polymer. In this case, when the blending amount of the alicyclic additive exceeds 50 parts by weight, the heat resistance as the resist ridge tends to be lowered.
  • the surfactant as an additive is a component having an action of improving coating properties, striations, image properties and the like.
  • surfactants examples include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene vinyl ether, polyoxyethylene n-octyl phenyl ether, and polyoxyethylene n_nonyl phenyl ether.
  • nonionic surfactants such as polyethylene glycol dilaurate and polyethylene glycol distearate ⁇
  • KP 3 4 1 manufactured by Shin-Etsu Chemical Co., Ltd.
  • surfactants can be used alone or in admixture of two or more.
  • the compounding amount of the surfactant is usually 2 parts by weight or less with respect to 100 parts by weight of the acryl-based polymer.
  • a sensitizer as an additive has the effect of absorbing the energy of radiation and transmitting the energy to the acid generator, thereby increasing the amount of acid produced. It has the effect of improving the apparent sensitivity of the functional resin composition.
  • sensitizers examples include strong rubazoles, benzophenones, rose bengals, anthracenes, phenols and the like.
  • sensitizers can be used alone or in admixture of two or more.
  • the blending amount of the sensitizer is preferably 50 parts by weight or less with respect to 100 parts by weight of the acrylic polymer.
  • additives other than those mentioned above include antihalation agents, adhesion assistants, storage stabilizers, antifoaming agents and the like.
  • the radiation-sensitive resin composition of the present invention is usually dissolved in a solvent so that the total solid concentration is usually 3 to 50% by weight, preferably 5 to 25% by weight. For example, it is filtered through a filter having a pore size of about 0.2 / m to prepare a composition solution.
  • component (E) examples include 2-pentanone, 2-hexanone, 2-heptanone, 2-octanone, and the like.
  • Linear ketones such as cyclopentanone and cyclohexanone; propylene glycol monomethyl ether acetate, propylene such as propylene glycol monoethyl ether acetate, Glycol moso alkyl ether Ruacetates: 2-Hydroxypropionate alkyls such as 2-hydroxymethyl propionate, 2-hydroxyethyl propionate, etc .; 3-Methyl methoxypropionate, 3-Ethylpropionate, 3_ In addition to 3 mono-alkoxypropionic acid alkyls such as methyl ethoxypropionate and 3-ethyloxypropionate, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol dimethyl
  • (E) solvents can be used alone or in admixture of two or more.
  • cyclohexanone is an effective solvent from the viewpoint of solubility, but it is preferable to avoid using it as much as possible because of its toxicity.
  • a radiation-sensitive resin composition containing a compound that generates an acid and (C) a low-molecular compound having a phenyl group that does not generate a new acid when irradiated with light a substrate such as a silicon wafer is used. Set up a regis ⁇ layer on top.
  • the film thickness is less than 1. O jum, but is preferably 0.05 to 0.7 im, and more preferably 0.1 to 0.5 m.
  • the radiation-sensitive resin composition solution is applied onto the solid to be ion-implanted or ion-implanted, for example, by an appropriate application means such as spin coating, cast coating, or roll coating.
  • a resist film is formed on a substrate such as a silicon wafer, a wafer coated with a silicon oxide thin film, or a wafer coated with aluminum to form a resist film.
  • PB a substrate
  • the resist film is irradiated so as to form a predetermined resist pattern.
  • Examples of radiation used at this time include ultraviolet light, K r F excimer laser (wavelength 248 nm), Ar F excimer laser (wavelength 19 3 nm), F 2 excimer laser (wavelength 15 7 nm), EUV (extreme ultraviolet, wavelength 13 nm, etc.), etc., charged particle beams such as electron beams, X-rays such as synchrotron radiation, etc. can be appropriately selected and used.
  • An Ar F excimer laser (wavelength 1 93 ⁇ m) or less than nm or an F 2 excimer laser (wavelength 1 5 7 nm) is preferred.
  • the irradiation conditions such as the irradiation amount are appropriately selected according to the composition of the radiation-sensitive resin composition, the type of each additive, and the like.
  • P E B is preferably performed in order to stably form a high-precision fine pattern.
  • the heating conditions for PEB vary depending on the composition of the radiation-sensitive resin composition, but are usually 30 to 200 ° C, preferably 50 to 170 ° C, and more preferably 70 to 1 50 ° C.
  • an organic system is used on the substrate to be used.
  • an inorganic antireflection film can be formed, and in order to prevent the influence of basic impurities contained in the environmental atmosphere, it is disclosed in, for example, Japanese Patent Application Laid-Open No. 5-1885988.
  • a protective film can be provided on the resist film or these techniques can be used in combination.
  • the irradiated resist film is developed using an Al force developing solution to form a predetermined resist pattern.
  • an aqueous alkaline solution in which tetramethylammonium hydroxide is dissolved is preferable.
  • the concentration of the alkaline aqueous solution is usually 10% by weight or less. In this case, if the concentration of the alkaline aqueous solution exceeds 10% by weight, the non-irradiated part may be dissolved in the image solution, which is not preferable.
  • An appropriate amount of a surfactant or the like can be added to the alkaline aqueous solution.
  • it is generally washed with water and dried.
  • Examples of ion sources used for ion implantation include ions of boron, phosphorus, arsenic, and argon.
  • Examples of the thin film on the substrate into which ions are implanted include silicon, silicon dioxide, silicon nitride, and aluminum.
  • an energy load of 10 to 200 keV is usually applied to the resist as the ion acceleration energy during ion implantation.
  • the polymerization start was carried out for 6 hours with the start of dropping as the polymerization start time. After the polymerization is complete, the polymerization solution is cooled to 30 ° C or lower by water cooling, poured into 2000 g of methanol, and the precipitated white powder is filtered off.
  • the filtered white powder was washed twice with 400 g of methanol on the slurry, filtered, and dried at 50 ° C. for 17 hours to obtain a white powder polymer (7 2 g, yield 72%).
  • This polymer is referred to as an acrylic polymer (A-1).
  • the polymerization start was carried out for 6 hours with the start of dropping as the polymerization start time. After completion of the polymerization, the polymerization solution is cooled with water to below 30 ° C, poured into 2,000 g of methanol, and the precipitated white powder is filtered off. The filtered white powder was washed twice with 400 g of methanol on the slurry, filtered, and dried at 50 ° C. for 17 hours to obtain a white powder polymer (78 g Yield 78%). This polymer is referred to as an acrylic polymer (A-2).
  • the polymerization solution is cooled to 30 ° C or lower by water cooling, poured into 2000 g of methanol, and the precipitated white powder is filtered off.
  • the filtered white powder was washed twice with 400 g of methanol on the slurry, filtered, and dried at 50 ° C. for 17 hours to obtain a white powder polymer (7 3 g, yield 73%).
  • This polymer is referred to as an acrylic polymer (A-3).
  • the polymerization start was carried out for 6 hours with the start of dropping as the polymerization start time. After completion of the polymerization, the polymerization solution is cooled to 30 ° C. or lower by water cooling, put into 200 g of methanol, and the precipitated white powder is filtered off.
  • the filtered white powder was washed twice with 400 g of methanol on the slurry, filtered, and dried at 50 ° C. for 17 hours to obtain a white powder polymer (77 7 g, yield 77%).
  • This polymer had Mw of 9,800.
  • This polymer is referred to as an acrylic polymer (A_4).
  • the polymerization solution is cooled to 30 ° C or lower by water cooling, put into 2 000 g of methanol, and the precipitated white powder is filtered off.
  • the filtered white powder was washed twice with 400 g of methanol on the slurry, filtered, and dried at 50 ° C. for 17 hours to obtain a white powder polymer. g, yield 75%).
  • This polymer is referred to as an acrylic polymer (A-5).
  • the polymerization start was carried out for 6 hours with the start of dropping as the polymerization start time.
  • the polymerization solution is cooled with water to 30 ° C. or lower, poured into 2000 g of methanol, and the precipitated white powder is filtered off.
  • the filtered white powder was washed twice with 400 g of methanol on the slurry, filtered, and dried at 50 ° C. for 17 hours to obtain a white powder polymer (78 g Yield 78%).
  • This polymer is referred to as an acrylic polymer (A-6).
  • the polymerization start was carried out for 6 hours with the start of dropping as the polymerization start time.
  • the polymerization solution is cooled with water to 30 ° C. or lower, poured into 2000 g of methanol, and the precipitated white powder is filtered off.
  • the filtered white powder was washed twice with 400 g of methanol on the slurry, filtered, and dried at 50 ° C. for 17 hours to obtain a white powder polymer. g, yield 75%).
  • This polymer is referred to as an acrylic polymer (A-7).
  • a silicon wafer that has been subjected to surface treatment by exposing the wafer surface to hexanemethyldisilazane at 150 ° C. for 60 seconds, and spin-coating each composition solution onto the substrate.
  • a Nikon A r F excimer laser exposure device (numerical aperture 0.60) on the resist film formed by applying PB on the hot plate at 100 ° C for 60 seconds. , Exposed through a mask pattern.
  • PEB was carried out at 115 ° C for 60 seconds, followed by development with 2.38 weight 0 / o of tramethylammonium hydroxide aqueous solution at 25 ° C for 60 seconds. It was washed with water and dried to form a positive type resist pattern.
  • the film thickness of the resist film is measured using the optical interference type film thickness measuring device; Lambda Ace VM-2100, measuring the film thickness at any 9 points on the wafer coated with the resist film and the average ⁇ The film thickness.
  • the following evaluation was performed using a silicon substrate on which a resist pattern formed by the pattern forming method was formed.
  • a resist film having a thickness of 0.22 m was formed on a silicon wafer, and a positive resist film pattern was formed using the pattern formation described above. At this time, when a line 'and' space pattern (1 L 1 S) with a line width of 0.18 mm is observed from the top of the pattern with Hitachi SEM: S 9 2 60, it is 1: 1.
  • the optimum exposure dose was defined as the exposure dose to be formed in the line width.
  • the line width at the top of the pattern is L 1.
  • the lower line width is L2, and (L1-L2) ZL1 is in the range of -0.15 to +0.15, (L1_L2) ZL1 is- X is less than 0.1 or greater than +0.15.
  • film thickness of 1800 nm 1 LZ 1 S when resolving by irradiating the optimal exposure dose at 0.22 Um the difference between the maximum value and the minimum value of the obtained pattern line width was 70 nm or less.
  • composition solution was applied onto a substrate by spin coating, and a resist film with a film thickness of 0.2 / im was neglected by performing PB on a hot plate at 100 ° C for 60 seconds.
  • a spectroscopic ellipsometer manufactured by WO OLLAM; VUV—VASE: VU—303, and the extinction coefficient k at a wavelength of 19 3 nm was determined.
  • Example 2 Each evaluation was performed using the same conditions as in Example 1 except that the resist film used in Example 1 was made to have a thickness of 1.2 m. Table 2 shows the evaluation results. Extinction coefficient Sensitivity Resolution ⁇ Pattern shape Pattern width fluctuation
  • Example 1 1 0.071 253 120 o 0 (55)
  • Example 1 2 0.066 247 120 o 0 (55)
  • Example 1 3 0.058 255 120 o 0 (55)
  • Example 1 4 0.072 238 120 o 0 (55)
  • Example 1 6 0.071 239 120 ⁇ ⁇ (55)
  • Example 1 7 0.069 243 120 o 0 (50)
  • Example 1 8 0.074 251 120 ⁇ 0 (55)
  • Example 1 9 0.073 240 120 o 0 (55)
  • the method and radiation-sensitive resin composition of the present invention can be finely processed using far-ultraviolet light having an wavelength of 200 nm or less, such as an Ar F excimer laser or F 2 excimer laser, or an electron beam (EB). It can be applied to various lithography techniques.
  • far-ultraviolet light having an wavelength of 200 nm or less, such as an Ar F excimer laser or F 2 excimer laser, or an electron beam (EB). It can be applied to various lithography techniques.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials For Photolithography (AREA)

Abstract

L'invention concerne un procédé d'implantation d'ions qui permet d'amincir une couche de résist au moyen d'une composition de résine sensible au rayonnement présentant une excellente propriété de blocage d'ions et une excellente résistance au choc de résist même sous la forme d'un film mince. L'invention concerne également une composition de résine sensible au rayonnement à utiliser dans ledit procédé. Le procédé comporte les étapes consistant à former une couche de résist d'épaisseur inférieure à 1,0 µm sur un substrat en utilisant une composition de résine sensible au rayonnement et contenant (A) une résine d'ester (méth)acrylique présentant un groupe dissociatif qui devient soluble par l'action d'un acide soluble en milieu alcalin par la dissociation du groupe dissociatif sous l'action d'un acide ; (B) un composé capable de générer un acide par l'exposition à des rayons radiaux et (C) un composé de faible masse moléculaire, phénylé, ne générant pas de nouvel acide par l'exposition aux rayons radiaux. La couche de résist est soumise à une exposition sélective et au développement alcalin pour former ainsi un motif de résist. Le motif de résist est masqué, et l'implantation des ions est réalisée.
PCT/JP2007/066318 2006-08-24 2007-08-16 Procédé d'implantation d'ions et composition de résine sensible au rayonnement pour une utilisation dans celui-ci WO2008023750A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008530946A JP4905811B2 (ja) 2006-08-24 2007-08-16 イオンインプランテーション方法及びそれに用いる感放射線性樹脂組成物

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006227788 2006-08-24
JP2006-227788 2006-08-24

Publications (1)

Publication Number Publication Date
WO2008023750A1 true WO2008023750A1 (fr) 2008-02-28

Family

ID=39106835

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/066318 WO2008023750A1 (fr) 2006-08-24 2007-08-16 Procédé d'implantation d'ions et composition de résine sensible au rayonnement pour une utilisation dans celui-ci

Country Status (3)

Country Link
JP (1) JP4905811B2 (fr)
TW (1) TW200819914A (fr)
WO (1) WO2008023750A1 (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010190993A (ja) * 2009-02-16 2010-09-02 Jsr Corp ポジ型レジスト組成物
WO2011002081A1 (fr) * 2009-07-02 2011-01-06 Jsr株式会社 Composition de résine sensible aux rayonnements
JP2011227448A (ja) * 2009-12-15 2011-11-10 Rohm & Haas Electronic Materials Llc フォトレジストおよびその使用方法
EP2472327A1 (fr) * 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Photorésines et leurs procédés d'utilisation
KR20120099338A (ko) 2011-01-26 2012-09-10 도오꾜오까고오교 가부시끼가이샤 레지스트 조성물, 레지스트 패턴 형성 방법
JP2012190000A (ja) * 2011-02-25 2012-10-04 Shin Etsu Chem Co Ltd ポジ型レジスト材料及びこれを用いたパターン形成方法
JP2013064978A (ja) * 2011-09-02 2013-04-11 Shin Etsu Chem Co Ltd ポジ型レジスト材料及びパターン形成方法
JP2013068928A (ja) * 2011-09-06 2013-04-18 Shin Etsu Chem Co Ltd ポジ型レジスト材料及びパターン形成方法
WO2018061512A1 (fr) * 2016-09-30 2018-04-05 富士フイルム株式会社 Procédé de formation de motif, procédé de fabrication de dispositif électronique, et composition sensible à la lumière active ou au rayonnement
JP2022105327A (ja) * 2020-12-31 2022-07-13 ローム アンド ハース エレクトロニック マテリアルズ エルエルシー フォトレジスト組成物及びパターン形成方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015162665A (ja) * 2014-02-28 2015-09-07 東京エレクトロン株式会社 熱処理方法、熱処理装置、及び記憶媒体

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09274318A (ja) * 1996-04-09 1997-10-21 Japan Synthetic Rubber Co Ltd 感放射線性樹脂組成物
JP2001215709A (ja) * 2000-02-07 2001-08-10 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2005266680A (ja) * 2004-03-22 2005-09-29 Fuji Photo Film Co Ltd 感光性組成物及びそれを用いたパターン形成方法
JP2005316136A (ja) * 2004-04-28 2005-11-10 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物、レジストパターン形成方法及びイオンインプランテーション方法
JP2006011250A (ja) * 2004-06-29 2006-01-12 Fuji Photo Film Co Ltd レジスト組成物及びそれを用いたパターン形成方法
JP2006215163A (ja) * 2005-02-02 2006-08-17 Tokyo Ohka Kogyo Co Ltd 薄膜インプランテーションプロセス用ポジ型レジスト組成物およびレジストパターン形成方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09274318A (ja) * 1996-04-09 1997-10-21 Japan Synthetic Rubber Co Ltd 感放射線性樹脂組成物
JP2001215709A (ja) * 2000-02-07 2001-08-10 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2005266680A (ja) * 2004-03-22 2005-09-29 Fuji Photo Film Co Ltd 感光性組成物及びそれを用いたパターン形成方法
JP2005316136A (ja) * 2004-04-28 2005-11-10 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物、レジストパターン形成方法及びイオンインプランテーション方法
JP2006011250A (ja) * 2004-06-29 2006-01-12 Fuji Photo Film Co Ltd レジスト組成物及びそれを用いたパターン形成方法
JP2006215163A (ja) * 2005-02-02 2006-08-17 Tokyo Ohka Kogyo Co Ltd 薄膜インプランテーションプロセス用ポジ型レジスト組成物およびレジストパターン形成方法

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010190993A (ja) * 2009-02-16 2010-09-02 Jsr Corp ポジ型レジスト組成物
JP5673533B2 (ja) * 2009-07-02 2015-02-18 Jsr株式会社 感放射線性樹脂組成物
WO2011002081A1 (fr) * 2009-07-02 2011-01-06 Jsr株式会社 Composition de résine sensible aux rayonnements
TWI488004B (zh) * 2009-07-02 2015-06-11 Jsr Corp Sensitive radiation linear resin composition
JP2015038621A (ja) * 2009-07-02 2015-02-26 Jsr株式会社 レジストパターンの形成方法
JP2015135983A (ja) * 2009-12-15 2015-07-27 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジストおよびその使用方法
JP2011227448A (ja) * 2009-12-15 2011-11-10 Rohm & Haas Electronic Materials Llc フォトレジストおよびその使用方法
EP2472327A1 (fr) * 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Photorésines et leurs procédés d'utilisation
US9508553B2 (en) 2010-12-30 2016-11-29 Rohm And Haas Electronic Materials Llc Photoresists and methods for use thereof
KR20120099338A (ko) 2011-01-26 2012-09-10 도오꾜오까고오교 가부시끼가이샤 레지스트 조성물, 레지스트 패턴 형성 방법
US9012125B2 (en) 2011-01-26 2015-04-21 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
JP2012190000A (ja) * 2011-02-25 2012-10-04 Shin Etsu Chem Co Ltd ポジ型レジスト材料及びこれを用いたパターン形成方法
JP2013064978A (ja) * 2011-09-02 2013-04-11 Shin Etsu Chem Co Ltd ポジ型レジスト材料及びパターン形成方法
JP2013068928A (ja) * 2011-09-06 2013-04-18 Shin Etsu Chem Co Ltd ポジ型レジスト材料及びパターン形成方法
WO2018061512A1 (fr) * 2016-09-30 2018-04-05 富士フイルム株式会社 Procédé de formation de motif, procédé de fabrication de dispositif électronique, et composition sensible à la lumière active ou au rayonnement
JPWO2018061512A1 (ja) * 2016-09-30 2019-06-24 富士フイルム株式会社 パターン形成方法、電子デバイスの製造方法、及び、感活性光線性又は感放射線性組成物
JP2022105327A (ja) * 2020-12-31 2022-07-13 ローム アンド ハース エレクトロニック マテリアルズ エルエルシー フォトレジスト組成物及びパターン形成方法
JP7377848B2 (ja) 2020-12-31 2023-11-10 ローム アンド ハース エレクトロニック マテリアルズ エルエルシー フォトレジスト組成物及びパターン形成方法
US11940730B2 (en) 2020-12-31 2024-03-26 Rohm And Haas Electronic Materials Llc Photoresist compositions and pattern formation methods

Also Published As

Publication number Publication date
JPWO2008023750A1 (ja) 2010-01-14
JP4905811B2 (ja) 2012-03-28
TW200819914A (en) 2008-05-01

Similar Documents

Publication Publication Date Title
WO2008023750A1 (fr) Procédé d'implantation d'ions et composition de résine sensible au rayonnement pour une utilisation dans celui-ci
JP4710762B2 (ja) 感放射線性樹脂組成物
TWI314943B (en) Radiation-sensitive resin composition
WO2007058345A1 (fr) Composition de resine radiosensible
JP2005255742A (ja) （メタ）アクリル酸系重合体および感放射線性樹脂組成物
JP4277420B2 (ja) 感放射線性樹脂組成物
JP2007052182A (ja) 感放射線性樹脂組成物
JP4076360B2 (ja) 感放射線性樹脂組成物
TW200903152A (en) Radiation-sensitive resin composition
JP2007231202A (ja) 共重合体および感放射線性樹脂組成物
JP5051232B2 (ja) 感放射線性樹脂組成物及びパターン形成方法
JP3843840B2 (ja) 感放射線性樹脂組成物
JP2005023234A (ja) アクリル系重合体および感放射線性樹脂組成物
KR101010410B1 (ko) 아크릴계 공중합체 및 감방사선성 수지 조성물
JP4254490B2 (ja) 酸解離性基含有重合体および感放射線性樹脂組成物
JP4765625B2 (ja) アクリル系重合体および感放射線性樹脂組成物
JP2005068418A (ja) アクリル系重合体および感放射線性樹脂組成物
JP4134685B2 (ja) 感放射線性樹脂組成物
JP4036320B2 (ja) 感放射線性樹脂組成物
JP2004203898A (ja) アクリル系重合体および感放射線性樹脂組成物
JP2004210910A (ja) （メタ）アクリル系重合体および感放射線性樹脂組成物
JP3968509B2 (ja) 感放射線性樹脂組成物
JP2007163834A (ja) 感放射線性樹脂組成物
JP2007262121A (ja) 共重合体および感放射線性樹脂組成物
JP4525668B2 (ja) 感放射線性樹脂組成物

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07792902

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2008530946

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

NENP Non-entry into the national phase

Ref country code: RU

122 Ep: pct application non-entry in european phase

Ref document number: 07792902

Country of ref document: EP

Kind code of ref document: A1