JP2011175241A5 - - Google Patents
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- Publication number
- JP2011175241A5 JP2011175241A5 JP2010279124A JP2010279124A JP2011175241A5 JP 2011175241 A5 JP2011175241 A5 JP 2011175241A5 JP 2010279124 A JP2010279124 A JP 2010279124A JP 2010279124 A JP2010279124 A JP 2010279124A JP 2011175241 A5 JP2011175241 A5 JP 2011175241A5
- Authority
- JP
- Japan
- Prior art keywords
- resin
- carbon atoms
- ethylene glycol
- diethylene glycol
- acrylates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011347 resin Substances 0.000 claims description 19
- 229920005989 resin Polymers 0.000 claims description 19
- 229920002120 photoresistant polymer Polymers 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 7
- OLQFXOWPTQTLDP-UHFFFAOYSA-N 2-(2-hydroxyethoxy)ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCO OLQFXOWPTQTLDP-UHFFFAOYSA-N 0.000 claims 4
- RWXMAAYKJDQVTF-UHFFFAOYSA-N 2-(2-hydroxyethoxy)ethyl prop-2-enoate Chemical compound OCCOCCOC(=O)C=C RWXMAAYKJDQVTF-UHFFFAOYSA-N 0.000 claims 4
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 claims 4
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 claims 4
- 150000001252 acrylic acid derivatives Chemical class 0.000 claims 4
- 125000005250 alkyl acrylate group Chemical group 0.000 claims 4
- 150000005215 alkyl ethers Chemical class 0.000 claims 4
- -1 hydroxyalkyl methacrylates Chemical class 0.000 claims 4
- 239000000178 monomer Substances 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 4
- 150000002500 ions Chemical class 0.000 claims 3
- 230000003213 activating effect Effects 0.000 claims 1
- 239000011247 coating layer Substances 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 239000000654 additive Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000000671 immersion lithography Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US28677409P | 2009-12-15 | 2009-12-15 | |
| US61/286774 | 2009-12-15 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015090517A Division JP6297519B2 (ja) | 2009-12-15 | 2015-04-27 | フォトレジストおよびその使用方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011175241A JP2011175241A (ja) | 2011-09-08 |
| JP2011175241A5 true JP2011175241A5 (enExample) | 2015-06-18 |
Family
ID=43773541
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010279124A Pending JP2011175241A (ja) | 2009-12-15 | 2010-12-15 | フォトレジストおよびその使用方法 |
| JP2015090517A Active JP6297519B2 (ja) | 2009-12-15 | 2015-04-27 | フォトレジストおよびその使用方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015090517A Active JP6297519B2 (ja) | 2009-12-15 | 2015-04-27 | フォトレジストおよびその使用方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10295910B2 (enExample) |
| EP (1) | EP2336828B1 (enExample) |
| JP (2) | JP2011175241A (enExample) |
| KR (1) | KR101857473B1 (enExample) |
| CN (1) | CN102184851B (enExample) |
| TW (2) | TWI605310B (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014143415A (ja) * | 2012-12-31 | 2014-08-07 | Rohm & Haas Electronic Materials Llc | イオン注入法 |
| KR102195700B1 (ko) | 2013-12-04 | 2020-12-29 | 삼성디스플레이 주식회사 | 화학증폭형 레지스트를 이용한 패턴 형성방법 |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4491628A (en) | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
| US4542093A (en) * | 1983-07-26 | 1985-09-17 | Fuji Photo Film Co., Ltd. | Photographic silverhalide material containing two subbing layers |
| US4968581A (en) | 1986-02-24 | 1990-11-06 | Hoechst Celanese Corporation | High resolution photoresist of imide containing polymers |
| US4810613A (en) | 1987-05-22 | 1989-03-07 | Hoechst Celanese Corporation | Blocked monomer and polymers therefrom for use as photoresists |
| DE3721741A1 (de) | 1987-07-01 | 1989-01-12 | Basf Ag | Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien |
| EP0366590B2 (en) | 1988-10-28 | 2001-03-21 | International Business Machines Corporation | Highly sensitive positive photoresist compositions |
| US5186383A (en) | 1991-10-02 | 1993-02-16 | Motorola, Inc. | Method for forming solder bump interconnections to a solder-plated circuit trace |
| DE69322946T2 (de) | 1992-11-03 | 1999-08-12 | International Business Machines Corp., Armonk, N.Y. | Photolackzusammensetzung |
| US6013416A (en) * | 1995-06-28 | 2000-01-11 | Fujitsu Limited | Chemically amplified resist compositions and process for the formation of resist patterns |
| KR100268967B1 (ko) | 1996-01-30 | 2000-10-16 | 모기 준이치 | 금속 착물 형성용 수용액, 주석-은 합금도금욕 및 당해도금욕을 사용하는 도금물의 제조방법 |
| US5843624A (en) | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
| US5861231A (en) | 1996-06-11 | 1999-01-19 | Shipley Company, L.L.C. | Copolymers and photoresist compositions comprising copolymer resin binder component |
| US7147983B1 (en) * | 1996-10-07 | 2006-12-12 | Shipley Company, L.L.C. | Dyed photoresists and methods and articles of manufacture comprising same |
| US6099713A (en) | 1996-11-25 | 2000-08-08 | C. Uyemura & Co., Ltd. | Tin-silver alloy electroplating bath and tin-silver alloy electroplating process |
| KR100219806B1 (ko) | 1997-05-27 | 1999-09-01 | 윤종용 | 반도체장치의 플립 칩 실장형 솔더 범프의 제조방법, 이에 따라 제조되는 솔더범프 및 그 분석방법 |
| US5990564A (en) | 1997-05-30 | 1999-11-23 | Lucent Technologies Inc. | Flip chip packaging of memory chips |
| JP4053631B2 (ja) * | 1997-10-08 | 2008-02-27 | Ａｚエレクトロニックマテリアルズ株式会社 | 反射防止膜又は光吸収膜用組成物及びこれに用いる重合体 |
| US6057083A (en) | 1997-11-04 | 2000-05-02 | Shipley Company, L.L.C. | Polymers and photoresist compositions |
| US6124217A (en) | 1998-11-25 | 2000-09-26 | Advanced Micro Devices, Inc. | In-situ SiON deposition/bake/TEOS deposition process for reduction of defects in interlevel dielectric for integrated circuit interconnects |
| US6245682B1 (en) | 1999-03-11 | 2001-06-12 | Taiwan Semiconductor Manufacturing Company | Removal of SiON ARC film after poly photo and etch |
| US6153504A (en) | 1999-08-16 | 2000-11-28 | Advanced Micro Devices, Inc. | Method of using a silicon oxynitride ARC for final metal layer |
| US6638847B1 (en) | 2000-04-19 | 2003-10-28 | Advanced Interconnect Technology Ltd. | Method of forming lead-free bump interconnections |
| KR20090036153A (ko) * | 2001-05-11 | 2009-04-13 | 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 | 후막 포토레지스트 및 그의 사용방법 |
| KR20020090489A (ko) * | 2001-05-28 | 2002-12-05 | 금호석유화학 주식회사 | 화학증폭형 레지스트용 중합체 및 이를 함유한 화학증폭형레지스트 조성물 |
| JP2003122007A (ja) * | 2001-10-09 | 2003-04-25 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
| DE10224217A1 (de) * | 2002-05-31 | 2003-12-18 | Infineon Technologies Ag | Photosensitiver Lack zur Beschichtung auf einem Halbleitersubstrat oder einer Maske |
| JP4083053B2 (ja) | 2003-03-31 | 2008-04-30 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
| US7297616B2 (en) * | 2003-04-09 | 2007-11-20 | Rohm And Haas Electronic Materials Llc | Methods, photoresists and substrates for ion-implant lithography |
| JP2004354417A (ja) | 2003-05-27 | 2004-12-16 | Shin Etsu Chem Co Ltd | ポジ型レジスト材料並びにこれを用いたパターン形成方法 |
| KR100630692B1 (ko) * | 2004-07-22 | 2006-10-02 | 삼성전자주식회사 | 포토마스크 및 포토마스크의 투과율 보정 방법 |
| JP4533756B2 (ja) * | 2005-01-07 | 2010-09-01 | 富士フイルム株式会社 | イオン注入工程用ポジ型レジスト組成物及びそれを用いたイオン注入方法 |
| KR100630749B1 (ko) * | 2005-05-20 | 2006-10-02 | 삼성전자주식회사 | 반도체 소자의 제조방법 |
| JP4205078B2 (ja) * | 2005-05-26 | 2009-01-07 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
| JP2008250227A (ja) * | 2007-03-30 | 2008-10-16 | Fujifilm Corp | ポジ型レジスト組成物及びこれを用いたパターン形成方法 |
| JP2008262059A (ja) * | 2007-04-12 | 2008-10-30 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物およびレジストパターン形成方法 |
| JP2010186647A (ja) | 2009-02-12 | 2010-08-26 | Toyota Motor Corp | 燃料電池の調温システム |
| TW201106101A (en) * | 2009-06-01 | 2011-02-16 | Fujifilm Electronic Materials | Chemically amplified positive photoresist composition |
-
2010
- 2010-12-15 JP JP2010279124A patent/JP2011175241A/ja active Pending
- 2010-12-15 US US12/969,236 patent/US10295910B2/en active Active
- 2010-12-15 KR KR1020100128631A patent/KR101857473B1/ko active Active
- 2010-12-15 EP EP10195059.0A patent/EP2336828B1/en not_active Not-in-force
- 2010-12-15 CN CN201010625170.0A patent/CN102184851B/zh active Active
- 2010-12-15 TW TW103108973A patent/TWI605310B/zh not_active IP Right Cessation
- 2010-12-15 TW TW099143921A patent/TWI477911B/zh not_active IP Right Cessation
-
2015
- 2015-04-27 JP JP2015090517A patent/JP6297519B2/ja active Active
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