JP2008524650A5 - - Google Patents

Download PDF

Info

Publication number
JP2008524650A5
JP2008524650A5 JP2007546642A JP2007546642A JP2008524650A5 JP 2008524650 A5 JP2008524650 A5 JP 2008524650A5 JP 2007546642 A JP2007546642 A JP 2007546642A JP 2007546642 A JP2007546642 A JP 2007546642A JP 2008524650 A5 JP2008524650 A5 JP 2008524650A5
Authority
JP
Japan
Prior art keywords
antireflection film
value
forming
silsesquioxane resin
solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007546642A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008524650A (ja
JP4995096B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2005/034677 external-priority patent/WO2006065316A1/en
Publication of JP2008524650A publication Critical patent/JP2008524650A/ja
Publication of JP2008524650A5 publication Critical patent/JP2008524650A5/ja
Application granted granted Critical
Publication of JP4995096B2 publication Critical patent/JP4995096B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2007546642A 2004-12-17 2005-09-29 反射防止膜の形成方法、レジスト画像の形成方法、パターンの形成方法、電子デバイスの製造方法及びarc組成物 Expired - Fee Related JP4995096B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US63695804P 2004-12-17 2004-12-17
US60/636,958 2004-12-17
PCT/US2005/034677 WO2006065316A1 (en) 2004-12-17 2005-09-29 Method for forming anti-reflective coating

Publications (3)

Publication Number Publication Date
JP2008524650A JP2008524650A (ja) 2008-07-10
JP2008524650A5 true JP2008524650A5 (enExample) 2008-09-18
JP4995096B2 JP4995096B2 (ja) 2012-08-08

Family

ID=35759377

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007546642A Expired - Fee Related JP4995096B2 (ja) 2004-12-17 2005-09-29 反射防止膜の形成方法、レジスト画像の形成方法、パターンの形成方法、電子デバイスの製造方法及びarc組成物

Country Status (7)

Country Link
US (1) US8025927B2 (enExample)
EP (1) EP1825330B1 (enExample)
JP (1) JP4995096B2 (enExample)
KR (1) KR101253487B1 (enExample)
CN (1) CN101073038B (enExample)
TW (1) TWI372312B (enExample)
WO (1) WO2006065316A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7756384B2 (en) 2004-11-08 2010-07-13 Dow Corning Corporation Method for forming anti-reflective coating
EP1846479B1 (en) 2004-12-17 2010-10-27 Dow Corning Corporation Siloxane resin coating
DE602005008100D1 (de) 2004-12-17 2008-08-21 Dow Corning Verfahren zur ausbildung einer antireflexionsbeschichtung
CN101371196B (zh) 2006-02-13 2012-07-04 陶氏康宁公司 抗反射涂料
US8026035B2 (en) 2007-03-30 2011-09-27 Cheil Industries, Inc. Etch-resistant disilane and saturated hydrocarbon bridged silicon-containing polymers, method of making the same, and method of using the same
WO2009088600A1 (en) * 2008-01-08 2009-07-16 Dow Corning Toray Co., Ltd. Silsesquioxane resins
CN101910253B (zh) * 2008-01-15 2013-04-10 陶氏康宁公司 倍半硅氧烷树脂
JP5581225B2 (ja) * 2008-03-04 2014-08-27 ダウ・コーニング・コーポレイション シルセスキオキサン樹脂
CN101970540B (zh) * 2008-03-05 2014-07-23 陶氏康宁公司 倍半硅氧烷树脂
EP2376584B1 (en) * 2008-12-10 2014-07-16 Dow Corning Corporation Wet-etchable antireflective coatings
EP2373722A4 (en) * 2008-12-10 2013-01-23 Dow Corning SILSESQUIOXAN RESINS
US8999625B2 (en) 2013-02-14 2015-04-07 International Business Machines Corporation Silicon-containing antireflective coatings including non-polymeric silsesquioxanes
CN103305036B (zh) * 2013-06-18 2016-09-14 武汉绿凯科技有限公司 一种含poss减反射膜镀膜液及其制备方法与应用
US9399720B2 (en) 2014-07-14 2016-07-26 Enki Technology, Inc. High gain durable anti-reflective coating
US9598586B2 (en) 2014-07-14 2017-03-21 Enki Technology, Inc. Coating materials and methods for enhanced reliability
WO2016064494A2 (en) * 2014-09-17 2016-04-28 Enki Technology, Inc. Multi-layer coatings
KR102858984B1 (ko) * 2016-02-19 2025-09-12 다우 실리콘즈 코포레이션 에이징된 중합체 실세스퀴옥산
TWI742160B (zh) 2016-09-30 2021-10-11 美商道康寧公司 橋接聚矽氧樹脂、膜、電子裝置及相關方法
TWI747956B (zh) 2016-09-30 2021-12-01 美商道康寧公司 橋接聚矽氧樹脂、膜、電子裝置及相關方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4056492A (en) * 1976-06-24 1977-11-01 General Electric Company Process for the production of a bodied silicone resin without the use of a catalyst
US5320923A (en) * 1993-01-28 1994-06-14 Hewlett-Packard Company Reusable, positive-charging organic photoconductor containing phthalocyanine pigment, hydroxy binder and silicon stabilizer
DE4414653A1 (de) * 1993-05-13 1994-11-17 Gen Electric Schneller klebende Silicon-Klebstoffzusammensetzungen
JP3542185B2 (ja) * 1995-02-02 2004-07-14 ダウ コーニング アジア株式会社 シリコーンレジン、これを含む組成物およびその硬化方法
DE69622364T2 (de) * 1995-08-15 2003-01-23 Dow Corning Asia, Ltd. Härtbare polymethylsilsesquioxane, verfahren zu deren härtung und gehärtete gegenstände
US5861472A (en) * 1996-07-05 1999-01-19 Dow Corning Corporation Method of making silicone pressure sensitive adhesives
US6177143B1 (en) 1999-01-06 2001-01-23 Allied Signal Inc Electron beam treatment of siloxane resins
US6824879B2 (en) * 1999-06-10 2004-11-30 Honeywell International Inc. Spin-on-glass anti-reflective coatings for photolithography
US6890448B2 (en) 1999-06-11 2005-05-10 Shipley Company, L.L.C. Antireflective hard mask compositions
US6420088B1 (en) 2000-06-23 2002-07-16 International Business Machines Corporation Antireflective silicon-containing compositions as hardmask layer
US20030176614A1 (en) * 2000-06-30 2003-09-18 Nigel Hacker Organohydridosiloxane resins with high organic content
US20030096090A1 (en) * 2001-10-22 2003-05-22 Boisvert Ronald Paul Etch-stop resins
US6842577B2 (en) * 2002-12-02 2005-01-11 Shipley Company L.L.C. Photoimageable waveguide composition and waveguide formed therefrom
EP1846479B1 (en) 2004-12-17 2010-10-27 Dow Corning Corporation Siloxane resin coating
CN101073039B (zh) 2004-12-17 2011-12-14 陶氏康宁公司 形成抗反射涂层的方法
DE602005008100D1 (de) 2004-12-17 2008-08-21 Dow Corning Verfahren zur ausbildung einer antireflexionsbeschichtung

Similar Documents

Publication Publication Date Title
JP2008524650A5 (enExample)
KR100945435B1 (ko) 리소그래피용 반사방지막 형성 조성물
JP6497535B2 (ja) レジスト下層膜形成組成物用添加剤及び該添加剤を含むレジスト下層膜形成組成物
KR101847382B1 (ko) 아믹산을 포함하는 실리콘 함유 레지스트 하층막 형성 조성물
KR102340598B1 (ko) 레지스트 패턴에 도포되는 폴리머 함유 도포액
KR20080081167A (ko) 광가교 경화의 레지스트 하층막을 형성하기 위한 규소 함유레지스트 하층막 형성 조성물
JP5144646B2 (ja) 感光性樹脂組成物
JP2009098673A5 (enExample)
JP2004526212A5 (enExample)
WO2006132088A1 (ja) ナフタレン樹脂誘導体を含有するリソグラフィー用塗布型下層膜形成組成物
WO2008015969A1 (en) Method of forming pattern, composition for forming upper-layer film, and composition for forming lower-layer film
JP2009527021A5 (enExample)
KR20170060076A (ko) 마스크 블랭크, 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법
JP6398364B2 (ja) 感光性樹脂組成物、パターン硬化膜の製造方法及び電子部品
KR20020070804A (ko) 리소그래피용 반사 방지막 형성 조성물
JP4932527B2 (ja) ポリオルガノシロキサン組成物
JP2001158810A (ja) 有機反射防止膜用組成物とその製造方法
JP5179972B2 (ja) 感光性ポリオルガノシロキサン組成物、ポリオルガノシロキサン硬化レリーフパターン及びその形成方法、並びに半導体装置及びその製造方法
JP2008260839A5 (enExample)
TWI902984B (zh) 阻劑下層膜形成用組成物
JP5411919B2 (ja) ポリオルガノシロキサン組成物
JP7719429B2 (ja) 硬化性官能基を有する化合物を含む段差基板被覆組成物
JP2008203614A (ja) 硬化レリーフパターン付き基材の製造方法
TW202248296A (zh) 含矽之光阻下層膜形成用組成物
KR20190087173A (ko) 네가티브형 감광성 수지 조성물