JP2007311791A - ＧｅＢｉＴｅ膜を相変化物質膜として採用する相変化記憶セル、それを有する相変化記憶素子、それを有する電子システム及びその製造方法 - Google Patents

ＧｅＢｉＴｅ膜を相変化物質膜として採用する相変化記憶セル、それを有する相変化記憶素子、それを有する電子システム及びその製造方法 Download PDF

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JP2007311791A
JP2007311791A JP2007125944A JP2007125944A JP2007311791A JP 2007311791 A JP2007311791 A JP 2007311791A JP 2007125944 A JP2007125944 A JP 2007125944A JP 2007125944 A JP2007125944 A JP 2007125944A JP 2007311791 A JP2007311791 A JP 2007311791A
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phase change
film
electrode
change memory
gebite
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JP2007311791A5 (enExample
Inventor
Bong-Jin Kuh
奉珍 具
Yong-Ho Ha
龍湖 河
Doo-Hwan Park
斗煥 朴
Jeong-Hee Park
正熙 朴
Han-Bong Ko
漢鳳 高
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
JP2007125944A 2006-05-19 2007-05-10 ＧｅＢｉＴｅ膜を相変化物質膜として採用する相変化記憶セル、それを有する相変化記憶素子、それを有する電子システム及びその製造方法 Pending JP2007311791A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060045298A KR100782482B1 (ko) 2006-05-19 2006-05-19 ＧｅＢｉＴｅ막을 상변화 물질막으로 채택하는 상변화 기억 셀, 이를 구비하는 상변화 기억소자, 이를 구비하는 전자 장치 및 그 제조방법

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JP2007311791A true JP2007311791A (ja) 2007-11-29
JP2007311791A5 JP2007311791A5 (enExample) 2010-06-24

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US (1) US7817464B2 (enExample)
JP (1) JP2007311791A (enExample)
KR (1) KR100782482B1 (enExample)
CN (1) CN101075632A (enExample)
TW (1) TWI338391B (enExample)

Cited By (3)

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JP2008311666A (ja) * 2007-06-18 2008-12-25 Samsung Electronics Co Ltd 可変抵抗不揮発性メモリセル及びそれの製造方法
JP2010157708A (ja) * 2008-12-29 2010-07-15 Marcello Mariani 相変化メモリのｆｅｏｌプロセスフローにおける回路及びメモリアレイの相対的高さの制御
CN114899311A (zh) * 2022-04-07 2022-08-12 长江先进存储产业创新中心有限责任公司 相变存储器及其控制方法和制作方法

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KR100637235B1 (ko) * 2005-08-26 2006-10-20 삼성에스디아이 주식회사 플라즈마 디스플레이 패널
US7459717B2 (en) * 2005-11-28 2008-12-02 Macronix International Co., Ltd. Phase change memory cell and manufacturing method
US8003971B2 (en) * 2008-03-19 2011-08-23 Qimonda Ag Integrated circuit including memory element doped with dielectric material
KR101604864B1 (ko) * 2008-04-25 2016-03-18 에이에스엠 인터내셔널 엔.브이. 텔루르와 셀렌 박막의 원자층 증착을 위한 전구체의 합성과 그 용도
US8134857B2 (en) * 2008-06-27 2012-03-13 Macronix International Co., Ltd. Methods for high speed reading operation of phase change memory and device employing same
US7932506B2 (en) * 2008-07-22 2011-04-26 Macronix International Co., Ltd. Fully self-aligned pore-type memory cell having diode access device
US8809829B2 (en) * 2009-06-15 2014-08-19 Macronix International Co., Ltd. Phase change memory having stabilized microstructure and manufacturing method
US8363463B2 (en) 2009-06-25 2013-01-29 Macronix International Co., Ltd. Phase change memory having one or more non-constant doping profiles
KR101535462B1 (ko) * 2009-08-27 2015-07-09 삼성전자주식회사 상변화 물질을 포함하는 비휘발성 메모리 소자
CN102687243B (zh) 2009-10-26 2016-05-11 Asm国际公司 用于含va族元素的薄膜ald的前体的合成和使用
KR20110103160A (ko) * 2010-03-12 2011-09-20 삼성전자주식회사 반도체 소자 및 이를 제조하는 방법
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CN102569645A (zh) * 2010-12-17 2012-07-11 中芯国际集成电路制造(上海)有限公司 相变存储器及其形成方法
US8426242B2 (en) 2011-02-01 2013-04-23 Macronix International Co., Ltd. Composite target sputtering for forming doped phase change materials
US8946666B2 (en) 2011-06-23 2015-02-03 Macronix International Co., Ltd. Ge-Rich GST-212 phase change memory materials
US8598562B2 (en) * 2011-07-01 2013-12-03 Micron Technology, Inc. Memory cell structures
US8932901B2 (en) 2011-10-31 2015-01-13 Macronix International Co., Ltd. Stressed phase change materials
KR20130123904A (ko) * 2012-05-04 2013-11-13 에스케이하이닉스 주식회사 반도체 메모리 장치
JP5905858B2 (ja) 2012-08-13 2016-04-20 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ Ａｌｄ／ｃｖｄプロセスにおけるｇｓｔ膜のための前駆体
US9336879B2 (en) 2014-01-24 2016-05-10 Macronix International Co., Ltd. Multiple phase change materials in an integrated circuit for system on a chip application
CN104485417A (zh) * 2014-12-16 2015-04-01 曲阜师范大学 一种提高GeSbTe相变性能的技术及其薄膜制备方法
CN108258114B (zh) * 2015-04-27 2020-12-08 江苏理工学院 用于高速相变存储器的GeTe/Sb类超晶格相变薄膜材料的制备方法
US9672906B2 (en) 2015-06-19 2017-06-06 Macronix International Co., Ltd. Phase change memory with inter-granular switching
US11314109B1 (en) * 2016-05-20 2022-04-26 URL Laboratories, LLC Electrically switchable infrared mirrors using phase-change chalcogenides materials
US10050196B1 (en) * 2017-05-04 2018-08-14 Macronix International Co., Ltd. Dielectric doped, Sb-rich GST phase change memory
KR102452296B1 (ko) * 2018-07-10 2022-10-06 고쿠리츠켄큐카이하츠호진 상교기쥬츠 소고켄큐쇼 적층 구조체 및 그 제조 방법 그리고 반도체 디바이스
KR102118734B1 (ko) * 2018-09-07 2020-06-09 한국과학기술연구원 4성분계 이상의 캘코제나이드 상변화 물질 및 이를 포함하는 메모리 소자
CN119300443B (zh) * 2024-12-06 2025-04-04 长春长光圆辰微电子技术有限公司 一种tmbs器件的制备工艺

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