TWI338391B - Phase change memory cell employing a gebite layer as a phase change material layer, phase change memory device including the same, electronic system including the same and method of fabricating the same - Google Patents
Phase change memory cell employing a gebite layer as a phase change material layer, phase change memory device including the same, electronic system including the same and method of fabricating the same Download PDFInfo
- Publication number
- TWI338391B TWI338391B TW096117854A TW96117854A TWI338391B TW I338391 B TWI338391 B TW I338391B TW 096117854 A TW096117854 A TW 096117854A TW 96117854 A TW96117854 A TW 96117854A TW I338391 B TWI338391 B TW I338391B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- phase change
- electrode
- interlayer insulating
- change memory
- Prior art date
Links
- 230000008859 change Effects 0.000 title claims description 164
- 239000012782 phase change material Substances 0.000 title claims description 89
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000010410 layer Substances 0.000 claims description 378
- 239000000203 mixture Substances 0.000 claims description 83
- 239000011229 interlayer Substances 0.000 claims description 77
- 239000004065 semiconductor Substances 0.000 claims description 75
- 229910052732 germanium Inorganic materials 0.000 claims description 65
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 49
- 239000012535 impurity Substances 0.000 claims description 42
- 238000010586 diagram Methods 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 22
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 13
- 229910052727 yttrium Inorganic materials 0.000 claims description 9
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 9
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 210000000003 hoof Anatomy 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052717 sulfur Inorganic materials 0.000 claims description 5
- 239000011593 sulfur Substances 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 229910052691 Erbium Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 3
- 229910000831 Steel Inorganic materials 0.000 claims description 2
- 239000010959 steel Substances 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 3
- 150000004767 nitrides Chemical class 0.000 claims 3
- 229910052902 vermiculite Inorganic materials 0.000 claims 2
- 235000019354 vermiculite Nutrition 0.000 claims 2
- 239000010455 vermiculite Substances 0.000 claims 2
- 239000005864 Sulphur Substances 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 83
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 14
- 229910052707 ruthenium Inorganic materials 0.000 description 14
- 230000000149 penetrating effect Effects 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 101100353526 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) pca-2 gene Proteins 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- -1 heat (pb) Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 210000004128 D cell Anatomy 0.000 description 1
- 101000812677 Homo sapiens Nucleotide pyrophosphatase Proteins 0.000 description 1
- 102100039306 Nucleotide pyrophosphatase Human genes 0.000 description 1
- 206010073261 Ovarian theca cell tumour Diseases 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 210000005056 cell body Anatomy 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- CXXKWLMXEDWEJW-UHFFFAOYSA-N tellanylidenecobalt Chemical compound [Te]=[Co] CXXKWLMXEDWEJW-UHFFFAOYSA-N 0.000 description 1
- 208000001644 thecoma Diseases 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060045298A KR100782482B1 (ko) | 2006-05-19 | 2006-05-19 | ＧｅＢｉＴｅ막을 상변화 물질막으로 채택하는 상변화 기억 셀, 이를 구비하는 상변화 기억소자, 이를 구비하는 전자 장치 및 그 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200805722A TW200805722A (en) | 2008-01-16 |
| TWI338391B true TWI338391B (en) | 2011-03-01 |
Family
ID=38711253
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096117854A TWI338391B (en) | 2006-05-19 | 2007-05-18 | Phase change memory cell employing a gebite layer as a phase change material layer, phase change memory device including the same, electronic system including the same and method of fabricating the same |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7817464B2 (enExample) |
| JP (1) | JP2007311791A (enExample) |
| KR (1) | KR100782482B1 (enExample) |
| CN (1) | CN101075632A (enExample) |
| TW (1) | TWI338391B (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7425735B2 (en) * | 2003-02-24 | 2008-09-16 | Samsung Electronics Co., Ltd. | Multi-layer phase-changeable memory devices |
| US7115927B2 (en) | 2003-02-24 | 2006-10-03 | Samsung Electronics Co., Ltd. | Phase changeable memory devices |
| KR100637235B1 (ko) * | 2005-08-26 | 2006-10-20 | 삼성에스디아이 주식회사 | 플라즈마 디스플레이 패널 |
| US7459717B2 (en) * | 2005-11-28 | 2008-12-02 | Macronix International Co., Ltd. | Phase change memory cell and manufacturing method |
| KR100911473B1 (ko) * | 2007-06-18 | 2009-08-11 | 삼성전자주식회사 | 상변화 메모리 유닛, 이의 제조 방법, 이를 포함하는상변화 메모리 장치 및 그 제조 방법 |
| US8003971B2 (en) * | 2008-03-19 | 2011-08-23 | Qimonda Ag | Integrated circuit including memory element doped with dielectric material |
| KR101604864B1 (ko) * | 2008-04-25 | 2016-03-18 | 에이에스엠 인터내셔널 엔.브이. | 텔루르와 셀렌 박막의 원자층 증착을 위한 전구체의 합성과 그 용도 |
| US8134857B2 (en) * | 2008-06-27 | 2012-03-13 | Macronix International Co., Ltd. | Methods for high speed reading operation of phase change memory and device employing same |
| US7932506B2 (en) * | 2008-07-22 | 2011-04-26 | Macronix International Co., Ltd. | Fully self-aligned pore-type memory cell having diode access device |
| US8154006B2 (en) * | 2008-12-29 | 2012-04-10 | Micron Technology, Inc. | Controlling the circuitry and memory array relative height in a phase change memory feol process flow |
| US8809829B2 (en) * | 2009-06-15 | 2014-08-19 | Macronix International Co., Ltd. | Phase change memory having stabilized microstructure and manufacturing method |
| US8363463B2 (en) | 2009-06-25 | 2013-01-29 | Macronix International Co., Ltd. | Phase change memory having one or more non-constant doping profiles |
| KR101535462B1 (ko) * | 2009-08-27 | 2015-07-09 | 삼성전자주식회사 | 상변화 물질을 포함하는 비휘발성 메모리 소자 |
| CN102687243B (zh) | 2009-10-26 | 2016-05-11 | Asm国际公司 | 用于含va族元素的薄膜ald的前体的合成和使用 |
| KR20110103160A (ko) * | 2010-03-12 | 2011-09-20 | 삼성전자주식회사 | 반도체 소자 및 이를 제조하는 방법 |
| US8456888B2 (en) * | 2010-10-07 | 2013-06-04 | Hynix Semiconductor Inc. | Semiconductor memory device including variable resistance elements and manufacturing method thereof |
| CN102569645A (zh) * | 2010-12-17 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器及其形成方法 |
| US8426242B2 (en) | 2011-02-01 | 2013-04-23 | Macronix International Co., Ltd. | Composite target sputtering for forming doped phase change materials |
| US8946666B2 (en) | 2011-06-23 | 2015-02-03 | Macronix International Co., Ltd. | Ge-Rich GST-212 phase change memory materials |
| US8598562B2 (en) * | 2011-07-01 | 2013-12-03 | Micron Technology, Inc. | Memory cell structures |
| US8932901B2 (en) | 2011-10-31 | 2015-01-13 | Macronix International Co., Ltd. | Stressed phase change materials |
| KR20130123904A (ko) * | 2012-05-04 | 2013-11-13 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 |
| JP5905858B2 (ja) | 2012-08-13 | 2016-04-20 | エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ | Ａｌｄ／ｃｖｄプロセスにおけるｇｓｔ膜のための前駆体 |
| US9336879B2 (en) | 2014-01-24 | 2016-05-10 | Macronix International Co., Ltd. | Multiple phase change materials in an integrated circuit for system on a chip application |
| CN104485417A (zh) * | 2014-12-16 | 2015-04-01 | 曲阜师范大学 | 一种提高GeSbTe相变性能的技术及其薄膜制备方法 |
| CN108258114B (zh) * | 2015-04-27 | 2020-12-08 | 江苏理工学院 | 用于高速相变存储器的GeTe/Sb类超晶格相变薄膜材料的制备方法 |
| US9672906B2 (en) | 2015-06-19 | 2017-06-06 | Macronix International Co., Ltd. | Phase change memory with inter-granular switching |
| US11314109B1 (en) * | 2016-05-20 | 2022-04-26 | URL Laboratories, LLC | Electrically switchable infrared mirrors using phase-change chalcogenides materials |
| US10050196B1 (en) * | 2017-05-04 | 2018-08-14 | Macronix International Co., Ltd. | Dielectric doped, Sb-rich GST phase change memory |
| KR102452296B1 (ko) * | 2018-07-10 | 2022-10-06 | 고쿠리츠켄큐카이하츠호진 상교기쥬츠 소고켄큐쇼 | 적층 구조체 및 그 제조 방법 그리고 반도체 디바이스 |
| KR102118734B1 (ko) * | 2018-09-07 | 2020-06-09 | 한국과학기술연구원 | 4성분계 이상의 캘코제나이드 상변화 물질 및 이를 포함하는 메모리 소자 |
| CN114899311A (zh) * | 2022-04-07 | 2022-08-12 | 长江先进存储产业创新中心有限责任公司 | 相变存储器及其控制方法和制作方法 |
| CN119300443B (zh) * | 2024-12-06 | 2025-04-04 | 长春长光圆辰微电子技术有限公司 | 一种tmbs器件的制备工艺 |
Family Cites Families (94)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL61678A (en) | 1979-12-13 | 1984-04-30 | Energy Conversion Devices Inc | Programmable cell and programmable electronic arrays comprising such cells |
| US4499557A (en) | 1980-10-28 | 1985-02-12 | Energy Conversion Devices, Inc. | Programmable cell for use in programmable electronic arrays |
| US4719594A (en) | 1984-11-01 | 1988-01-12 | Energy Conversion Devices, Inc. | Grooved optical data storage device including a chalcogenide memory layer |
| US4653024A (en) | 1984-11-21 | 1987-03-24 | Energy Conversion Devices, Inc. | Data storage device including a phase changeable material |
| US4820394A (en) | 1984-11-21 | 1989-04-11 | Energy Conversion Devices, Inc. | Phase changeable material |
| CN1010519B (zh) | 1985-09-25 | 1990-11-21 | 松下电器产业株式会社 | 可逆的光学情报记录介质 |
| US4845533A (en) | 1986-08-22 | 1989-07-04 | Energy Conversion Devices, Inc. | Thin film electrical devices with amorphous carbon electrodes and method of making same |
| US4924436A (en) | 1987-06-22 | 1990-05-08 | Energy Conversion Devices, Inc. | Data storage device having a phase change memory medium reversible by direct overwrite and method of direct overwrite |
| JPH01220236A (ja) * | 1988-02-29 | 1989-09-01 | Hoya Corp | 書き替え可能な相変化型光メモリ媒体 |
| JPH03297689A (ja) | 1990-04-17 | 1991-12-27 | Toray Ind Inc | 情報記録媒体 |
| US5194363A (en) | 1990-04-27 | 1993-03-16 | Matsushita Electric Industrial Co., Ltd. | Optical recording medium and production process for the medium |
| US5536947A (en) | 1991-01-18 | 1996-07-16 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory element and arrays fabricated therefrom |
| US5341328A (en) * | 1991-01-18 | 1994-08-23 | Energy Conversion Devices, Inc. | Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life |
| US5166758A (en) | 1991-01-18 | 1992-11-24 | Energy Conversion Devices, Inc. | Electrically erasable phase change memory |
| US5552608A (en) | 1995-06-26 | 1996-09-03 | Philips Electronics North America Corporation | Closed cycle gas cryogenically cooled radiation detector |
| US5714768A (en) | 1995-10-24 | 1998-02-03 | Energy Conversion Devices, Inc. | Second-layer phase change memory array on top of a logic device |
| US6087674A (en) | 1996-10-28 | 2000-07-11 | Energy Conversion Devices, Inc. | Memory element with memory material comprising phase-change material and dielectric material |
| US5825046A (en) | 1996-10-28 | 1998-10-20 | Energy Conversion Devices, Inc. | Composite memory material comprising a mixture of phase-change memory material and dielectric material |
| WO1998047142A1 (en) * | 1997-04-16 | 1998-10-22 | Asahi Kasei Kogyo Kabushiki Kaisha | Process for producing optical information recording medium and optical information recording medium produced by the process |
| JPH10340489A (ja) | 1997-06-04 | 1998-12-22 | Victor Co Of Japan Ltd | 相変化型光ディスク及び相変化型光ディスクの製造方法 |
| EP0917137B1 (en) | 1997-11-17 | 2006-06-28 | Mitsubishi Kagaku Media Co., Ltd. | Optical information recording medium |
| AU1612699A (en) | 1998-06-17 | 2000-01-05 | H. Randall Craig | Cryogenic freezing of liquids |
| US6141241A (en) | 1998-06-23 | 2000-10-31 | Energy Conversion Devices, Inc. | Universal memory element with systems employing same and apparatus and method for reading, writing and programming same |
| US6258062B1 (en) | 1999-02-25 | 2001-07-10 | Joseph M. Thielen | Enclosed container power supply for a needleless injector |
| JP2000260073A (ja) | 1999-03-10 | 2000-09-22 | Nec Corp | 誘電体膜の製造方法及びその誘電体膜を用いた相変化型光ディスク媒体とその製造方法 |
| WO2000054982A1 (en) * | 1999-03-15 | 2000-09-21 | Matsushita Electric Industrial Co., Ltd. | Information recording medium and method for manufacturing the same |
| US6496946B2 (en) | 1999-05-10 | 2002-12-17 | Motorola, Inc. | Electronic control apparatus with memory validation and method |
| DE19946073A1 (de) | 1999-09-25 | 2001-05-10 | Volkswagen Ag | System zur Steuerung von Fahrzeugkomponenten nach dem "Drive By Wire"-Prinzip |
| US6365256B1 (en) | 2000-02-29 | 2002-04-02 | Eastman Kodak Company | Erasable phase change optical recording elements |
| US6429064B1 (en) | 2000-09-29 | 2002-08-06 | Intel Corporation | Reduced contact area of sidewall conductor |
| US6555860B2 (en) | 2000-09-29 | 2003-04-29 | Intel Corporation | Compositionally modified resistive electrode |
| EP1201529B1 (de) | 2000-10-27 | 2008-04-09 | VDO Automotive AG | Verfahren und Einrichtung zur Bestimmung eines Lenkwinkels eines Kraftfahrzeuges |
| JP4025527B2 (ja) | 2000-10-27 | 2007-12-19 | 松下電器産業株式会社 | メモリ、書き込み装置、読み出し装置およびその方法 |
| US6437383B1 (en) | 2000-12-21 | 2002-08-20 | Intel Corporation | Dual trench isolation for a phase-change memory cell and method of making same |
| US6534781B2 (en) | 2000-12-26 | 2003-03-18 | Ovonyx, Inc. | Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact |
| US6531373B2 (en) | 2000-12-27 | 2003-03-11 | Ovonyx, Inc. | Method of forming a phase-change memory cell using silicon on insulator low electrode in charcogenide elements |
| KR100453540B1 (ko) * | 2001-01-03 | 2004-10-22 | 내셔널 사이언스 카운실 | 재기록가능한 상변화형 광기록 조성물 및 재기록가능한상변화형 광디스크 |
| JP2002246310A (ja) | 2001-02-14 | 2002-08-30 | Sony Corp | 半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置 |
| US6511862B2 (en) | 2001-06-30 | 2003-01-28 | Ovonyx, Inc. | Modified contact for programmable devices |
| US6511867B2 (en) | 2001-06-30 | 2003-01-28 | Ovonyx, Inc. | Utilizing atomic layer deposition for programmable device |
| US6588540B2 (en) | 2001-07-26 | 2003-07-08 | Delphi Technologies, Inc. | Steer-by-wire redundant handwheel control |
| US6709958B2 (en) | 2001-08-30 | 2004-03-23 | Micron Technology, Inc. | Integrated circuit device and fabrication using metal-doped chalcogenide materials |
| US6507061B1 (en) | 2001-08-31 | 2003-01-14 | Intel Corporation | Multiple layer phase-change memory |
| WO2003021589A1 (en) | 2001-09-01 | 2003-03-13 | Energy Conversion Devices, Inc. | Increased data storage in optical data storage and retrieval systems using blue lasers and/or plasmon lenses |
| US6586761B2 (en) | 2001-09-07 | 2003-07-01 | Intel Corporation | Phase change material memory device |
| US6545287B2 (en) | 2001-09-07 | 2003-04-08 | Intel Corporation | Using selective deposition to form phase-change memory cells |
| JP2003168222A (ja) | 2001-09-20 | 2003-06-13 | Victor Co Of Japan Ltd | 情報記録担体及び情報記録担体の再生方法及び情報記録担体の再生装置 |
| JP3749847B2 (ja) | 2001-09-27 | 2006-03-01 | 株式会社東芝 | 相変化型不揮発性記憶装置及びその駆動回路 |
| US6690026B2 (en) | 2001-09-28 | 2004-02-10 | Intel Corporation | Method of fabricating a three-dimensional array of active media |
| US6933031B2 (en) | 2001-10-19 | 2005-08-23 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium and its manufacturing method |
| US6549447B1 (en) * | 2001-10-31 | 2003-04-15 | Peter Fricke | Memory cell structure |
| US6885021B2 (en) | 2001-12-31 | 2005-04-26 | Ovonyx, Inc. | Adhesion layer for a polymer memory device and method therefor |
| US6648098B2 (en) * | 2002-02-08 | 2003-11-18 | Bose Corporation | Spiral acoustic waveguide electroacoustical transducing system |
| US6891749B2 (en) | 2002-02-20 | 2005-05-10 | Micron Technology, Inc. | Resistance variable ‘on ’ memory |
| US7087919B2 (en) | 2002-02-20 | 2006-08-08 | Micron Technology, Inc. | Layered resistance variable memory device and method of fabrication |
| US6972430B2 (en) | 2002-02-20 | 2005-12-06 | Stmicroelectronics S.R.L. | Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof |
| US6899938B2 (en) | 2002-02-22 | 2005-05-31 | Energy Conversion Devices, Inc. | Phase change data storage device for multi-level recording |
| CN101042903B (zh) | 2002-02-25 | 2010-06-09 | 日矿金属株式会社 | 相变型存储器用溅射靶的制造方法 |
| US6670628B2 (en) | 2002-04-04 | 2003-12-30 | Hewlett-Packard Company, L.P. | Low heat loss and small contact area composite electrode for a phase change media memory device |
| KR100476893B1 (ko) | 2002-05-10 | 2005-03-17 | 삼성전자주식회사 | 상변환 기억 셀들 및 그 제조방법들 |
| US6759267B2 (en) | 2002-07-19 | 2004-07-06 | Macronix International Co., Ltd. | Method for forming a phase change memory |
| US6864503B2 (en) | 2002-08-09 | 2005-03-08 | Macronix International Co., Ltd. | Spacer chalcogenide memory method and device |
| US6850432B2 (en) | 2002-08-20 | 2005-02-01 | Macronix International Co., Ltd. | Laser programmable electrically readable phase-change memory method and device |
| US6856002B2 (en) | 2002-08-29 | 2005-02-15 | Micron Technology, Inc. | Graded GexSe100-x concentration in PCRAM |
| US6884991B2 (en) | 2002-09-10 | 2005-04-26 | Trw Inc. | Steering wheel angle sensor |
| JP3647848B2 (ja) * | 2002-09-10 | 2005-05-18 | 日立マクセル株式会社 | 情報記録媒体 |
| JP3786665B2 (ja) | 2002-09-10 | 2006-06-14 | 日立マクセル株式会社 | 情報記録媒体 |
| CN100341060C (zh) * | 2002-09-13 | 2007-10-03 | 松下电器产业株式会社 | 信息记录介质及其制造方法 |
| CN1589461A (zh) | 2002-10-11 | 2005-03-02 | 三菱电机株式会社 | 显示装置 |
| JP4928045B2 (ja) | 2002-10-31 | 2012-05-09 | 大日本印刷株式会社 | 相変化型メモリ素子およびその製造方法 |
| US7049623B2 (en) | 2002-12-13 | 2006-05-23 | Ovonyx, Inc. | Vertical elevated pore phase change memory |
| US20040115945A1 (en) | 2002-12-13 | 2004-06-17 | Lowrey Tyler A. | Using an electron beam to write phase change memory devices |
| US7205562B2 (en) | 2002-12-13 | 2007-04-17 | Intel Corporation | Phase change memory and method therefor |
| US6869883B2 (en) | 2002-12-13 | 2005-03-22 | Ovonyx, Inc. | Forming phase change memories |
| US6867425B2 (en) | 2002-12-13 | 2005-03-15 | Intel Corporation | Lateral phase change memory and method therefor |
| US7402851B2 (en) | 2003-02-24 | 2008-07-22 | Samsung Electronics Co., Ltd. | Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same |
| US7115927B2 (en) | 2003-02-24 | 2006-10-03 | Samsung Electronics Co., Ltd. | Phase changeable memory devices |
| KR100543445B1 (ko) | 2003-03-04 | 2006-01-23 | 삼성전자주식회사 | 상변화 기억 소자 및 그 형성방법 |
| JP4181490B2 (ja) | 2003-03-25 | 2008-11-12 | 松下電器産業株式会社 | 情報記録媒体とその製造方法 |
| JP4445398B2 (ja) * | 2003-04-03 | 2010-04-07 | 株式会社東芝 | 相変化メモリ装置 |
| JP4634014B2 (ja) | 2003-05-22 | 2011-02-16 | 株式会社日立製作所 | 半導体記憶装置 |
| US7067865B2 (en) | 2003-06-06 | 2006-06-27 | Macronix International Co., Ltd. | High density chalcogenide memory cells |
| US7893419B2 (en) | 2003-08-04 | 2011-02-22 | Intel Corporation | Processing phase change material to improve programming speed |
| US7381611B2 (en) | 2003-08-04 | 2008-06-03 | Intel Corporation | Multilayered phase change memory |
| JP4006410B2 (ja) | 2003-09-22 | 2007-11-14 | 日立マクセル株式会社 | 情報記録媒体 |
| WO2005031752A1 (ja) * | 2003-09-26 | 2005-04-07 | Kanazawa University Technology Licensing Organization Ltd. | 多値メモリおよびそのための相変化型記録媒体への記録方法 |
| JP4145773B2 (ja) | 2003-11-06 | 2008-09-03 | パイオニア株式会社 | 情報記録再生装置および記録媒体 |
| JP4124743B2 (ja) * | 2004-01-21 | 2008-07-23 | 株式会社ルネサステクノロジ | 相変化メモリ |
| TW200529414A (en) * | 2004-02-06 | 2005-09-01 | Renesas Tech Corp | Storage |
| JP4865248B2 (ja) * | 2004-04-02 | 2012-02-01 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TW200601322A (en) * | 2004-04-07 | 2006-01-01 | Hitachi Maxell | Information recording medium |
| DE102005025209B4 (de) * | 2004-05-27 | 2011-01-13 | Samsung Electronics Co., Ltd., Suwon | Halbleiterspeicherbauelement, elektronisches System und Verfahren zur Herstellung eines Halbleiterspeicherbauelements |
| US7394088B2 (en) | 2005-11-15 | 2008-07-01 | Macronix International Co., Ltd. | Thermally contained/insulated phase change memory device and method (combined) |
| JP4478100B2 (ja) * | 2005-11-30 | 2010-06-09 | 株式会社東芝 | 半導体記録素子 |
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| CN101075632A (zh) | 2007-11-21 |
| US20070267721A1 (en) | 2007-11-22 |
| KR100782482B1 (ko) | 2007-12-05 |
| TW200805722A (en) | 2008-01-16 |
| JP2007311791A (ja) | 2007-11-29 |
| US7817464B2 (en) | 2010-10-19 |
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