CN101075632A - 相变存储单元、相变存储器件、电子系统及其制造方法 - Google Patents

相变存储单元、相变存储器件、电子系统及其制造方法 Download PDF

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Publication number
CN101075632A
CN101075632A CNA2007101034537A CN200710103453A CN101075632A CN 101075632 A CN101075632 A CN 101075632A CN A2007101034537 A CNA2007101034537 A CN A2007101034537A CN 200710103453 A CN200710103453 A CN 200710103453A CN 101075632 A CN101075632 A CN 101075632A
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China
Prior art keywords
layer
electrode
phase
phase change
change memory
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Pending
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CNA2007101034537A
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English (en)
Chinese (zh)
Inventor
具奉珍
河龙湖
朴斗焕
朴正熙
高汉凤
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of CN101075632A publication Critical patent/CN101075632A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
CNA2007101034537A 2006-05-19 2007-05-18 相变存储单元、相变存储器件、电子系统及其制造方法 Pending CN101075632A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020060045298 2006-05-19
KR1020060045298A KR100782482B1 (ko) 2006-05-19 2006-05-19 ＧｅＢｉＴｅ막을 상변화 물질막으로 채택하는 상변화 기억 셀, 이를 구비하는 상변화 기억소자, 이를 구비하는 전자 장치 및 그 제조방법

Publications (1)

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CN101075632A true CN101075632A (zh) 2007-11-21

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US (1) US7817464B2 (enExample)
JP (1) JP2007311791A (enExample)
KR (1) KR100782482B1 (enExample)
CN (1) CN101075632A (enExample)
TW (1) TWI338391B (enExample)

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CN102569645A (zh) * 2010-12-17 2012-07-11 中芯国际集成电路制造(上海)有限公司 相变存储器及其形成方法
CN101685669B (zh) * 2008-06-27 2012-07-25 旺宏电子股份有限公司 相变式存储装置和其操作方法
CN104485417A (zh) * 2014-12-16 2015-04-01 曲阜师范大学 一种提高GeSbTe相变性能的技术及其薄膜制备方法
TWI481739B (zh) * 2008-04-25 2015-04-21 Ａｓｍ國際股份有限公司 碲與硒薄膜之原子層沈積用的前驅物的合成與用途
CN108258114A (zh) * 2015-04-27 2018-07-06 江苏理工学院 用于高速相变存储器的GeTe/Sb类超晶格相变薄膜材料的制备方法
CN108807453A (zh) * 2017-05-04 2018-11-13 旺宏电子股份有限公司 介电掺杂且富含锑的gst相变存储器
CN112292758A (zh) * 2018-07-10 2021-01-29 国立研究开发法人产业技术综合研究所 积层构造体及积层构造体的制造方法以及半导体装置
CN119300443A (zh) * 2024-12-06 2025-01-10 长春长光圆辰微电子技术有限公司 一种tmbs器件的制备工艺

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