JP2007311791A5 - - Google Patents

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JP2007311791A5
JP2007311791A5 JP2007125944A JP2007125944A JP2007311791A5 JP 2007311791 A5 JP2007311791 A5 JP 2007311791A5 JP 2007125944 A JP2007125944 A JP 2007125944A JP 2007125944 A JP2007125944 A JP 2007125944A JP 2007311791 A5 JP2007311791 A5 JP 2007311791A5
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electrode
phase change
film
interlayer insulating
coordinates
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JP2007125944A
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JP2007311791A (ja
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Priority claimed from KR1020060045298A external-priority patent/KR100782482B1/ko
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JP2007125944A 2006-05-19 2007-05-10 ＧｅＢｉＴｅ膜を相変化物質膜として採用する相変化記憶セル、それを有する相変化記憶素子、それを有する電子システム及びその製造方法 Pending JP2007311791A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060045298A KR100782482B1 (ko) 2006-05-19 2006-05-19 ＧｅＢｉＴｅ막을 상변화 물질막으로 채택하는 상변화 기억 셀, 이를 구비하는 상변화 기억소자, 이를 구비하는 전자 장치 및 그 제조방법

Publications (2)

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JP2007311791A JP2007311791A (ja) 2007-11-29
JP2007311791A5 true JP2007311791A5 (enExample) 2010-06-24

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JP2007125944A Pending JP2007311791A (ja) 2006-05-19 2007-05-10 ＧｅＢｉＴｅ膜を相変化物質膜として採用する相変化記憶セル、それを有する相変化記憶素子、それを有する電子システム及びその製造方法

Country Status (5)

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US (1) US7817464B2 (enExample)
JP (1) JP2007311791A (enExample)
KR (1) KR100782482B1 (enExample)
CN (1) CN101075632A (enExample)
TW (1) TWI338391B (enExample)

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