JP2007214367A - 熱処理装置,熱処理方法及びプログラム - Google Patents
熱処理装置,熱処理方法及びプログラム Download PDFInfo
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- JP2007214367A JP2007214367A JP2006032709A JP2006032709A JP2007214367A JP 2007214367 A JP2007214367 A JP 2007214367A JP 2006032709 A JP2006032709 A JP 2006032709A JP 2006032709 A JP2006032709 A JP 2006032709A JP 2007214367 A JP2007214367 A JP 2007214367A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Abstract
【解決手段】加熱処理装置50の基台160上に,4つの熱処理板161a〜161dが直線状に並べて設けられる。また,加熱処理装置50には,4つの熱処理板相互間のウェハWの搬送を行う3つの搬送部材群D1〜D3が設けられる。各搬送部材群D1〜D3の搬送部材180〜182は,基台160上に熱処理板の配列方向に沿って形成された溝170内を移動でき,ウェハWを支持し昇降できる。そして,熱処理の際には,温度が同じ熱処理板161a〜161dにウェハWが順次搬送され,各熱処理板161a〜161dにおいて熱処理が分割して行われる。こうすることにより,各ウェハWが同じ経路で熱処理され,ウェハ間で熱履歴が一定になる。
【選択図】図4
Description
50 加熱処理装置
160 基台
161a〜161d 熱処理板
180〜182 搬送部材
D1〜D3 搬送部材群
W ウェハ
Claims (13)
- 基板の所定の熱処理を行う熱処理装置であって,
前記所定の熱処理を分割して行う複数の熱処理部と,
前記複数の熱処理部の各熱処理部に所定の順で基板を搬送し,なおかつ前記複数の熱処理部において複数の基板を連続的に搬送可能な基板搬送機構と,を有し,
前記複数の熱処理部は,同じ温度で基板を熱処理することを特徴とする,熱処理装置。 - 前記熱処理部は,基板を載置して熱処理する熱処理板であることを特徴とする,請求項1に記載の熱処理装置。
- 前記複数の熱処理板は,水平方向に直線状に配置され,
前記基板搬送機構は,基板を支持した状態で前記熱処理板の配列方向に沿って移動して前記熱処理板相互間の基板の搬送を行う搬送部材を有することを特徴とする,請求項2に記載の熱処理装置。 - 前記搬送部材は,隣り合う熱処理板の間の区間毎に設けられていることを特徴とする,請求項3に記載の熱処理装置。
- 前記搬送部材は,前記隣り合う熱処理板の区間毎に,基板面内における基板を支持する位置が異なることを特徴とする,請求項4に記載の熱処理装置。
- 前記複数の熱処理板は,水平の基台上に直線状に並べて設けられており,
前記基台上には,前記熱処理板の配列方向に沿って形成され,なおかつ前記熱処理板を通る溝が形成されており,
前記搬送部材は,前記溝内を移動するスライダ部と,前記スライダ部に設けられ,基板の下面を支持して基板を昇降するピン部を有していることを特徴とする,請求項3〜5のいずれかに記載の熱処理装置。 - 前記搬送部材は,前記熱処理板の配列方向と直角方向に沿って形成され前記基板の下面を支持する複数のワイヤ部と,前記ワイヤ部を前記熱処理板の配列方向に移動させる水平駆動部と,前記ワイヤを昇降させる昇降駆動部を有することを特徴とする,請求項3〜5のいずれかに記載の熱処理装置。
- 前記各熱処理板には,基板を昇降させる昇降ピンが設けられ,
前記複数のワイヤ部は,前記昇降ピンに支持された基板が上下方向に通過できるように左右に開閉自在であることを特徴とする,請求項7に記載の熱処理装置。 - 前記複数の熱処理板の各熱処理板は,複数の領域に分割されており,当該各熱処理板の各領域毎に温度調整可能であることを特徴とする,請求項2〜8のいずれかに記載の熱処理装置。
- 前記各熱処理板の各領域の温度は,総ての熱処理板に搬送された基板の面内の熱履歴が均一になるように調整されていることを特徴とする,請求項9に記載の熱処理装置。
- 前記複数の熱処理板のうちの少なくとも一つの熱処理板は,前記領域の分割パターンが異なることを特徴とする,請求項9又は10のいずれかに記載の熱処理装置。
- 基板の所定の熱処理を行う熱処理方法であって,
温度が同じで前記所定の熱処理を分割して行う複数の熱処理部の各熱処理部に,所定の順路で基板を連続的に搬送して,前記所定の熱処理を行うことを特徴とする,熱処理方法。 - 請求項12の熱処理方法をコンピュータに実現させるためのプログラム。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006032709A JP4762743B2 (ja) | 2006-02-09 | 2006-02-09 | 熱処理装置 |
US11/626,666 US7628612B2 (en) | 2006-02-09 | 2007-01-24 | Heat treatment apparatus, heat treatment method, and computer readable storage medium |
KR1020070013531A KR101287736B1 (ko) | 2006-02-09 | 2007-02-09 | 열처리 장치, 열처리 방법 및 컴퓨터 독취 가능한 기억매체 |
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JP2006032709A JP4762743B2 (ja) | 2006-02-09 | 2006-02-09 | 熱処理装置 |
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JP2007214367A true JP2007214367A (ja) | 2007-08-23 |
JP4762743B2 JP4762743B2 (ja) | 2011-08-31 |
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JP2006032709A Expired - Fee Related JP4762743B2 (ja) | 2006-02-09 | 2006-02-09 | 熱処理装置 |
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US (1) | US7628612B2 (ja) |
JP (1) | JP4762743B2 (ja) |
KR (1) | KR101287736B1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010016053A (ja) * | 2008-07-01 | 2010-01-21 | Tokyo Electron Ltd | 被検査体の受け渡し機構 |
JP2011222834A (ja) * | 2010-04-12 | 2011-11-04 | Hoya Corp | ベーク処理装置、レジストパターン形成方法、フォトマスクの製造方法、及び、ナノインプリント用モールドの製造方法 |
KR101345997B1 (ko) * | 2012-06-04 | 2013-12-31 | 주식회사 테스 | 박막증착장치 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4657940B2 (ja) * | 2006-02-10 | 2011-03-23 | 東京エレクトロン株式会社 | 基板の処理システム |
JP4670677B2 (ja) * | 2006-02-17 | 2011-04-13 | 東京エレクトロン株式会社 | 加熱装置、加熱方法、塗布装置及び記憶媒体 |
JP4859229B2 (ja) * | 2006-12-08 | 2012-01-25 | 東京エレクトロン株式会社 | 熱処理装置 |
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JPS63229824A (ja) * | 1987-03-19 | 1988-09-26 | Tokyo Electron Ltd | ベ−キング装置 |
JPS6428918A (en) * | 1987-07-24 | 1989-01-31 | Mitsubishi Electric Corp | Resist baking device |
JPH11243128A (ja) * | 1988-02-12 | 1999-09-07 | Tokyo Electron Ltd | 基板処理装置 |
JPH01225119A (ja) * | 1988-03-03 | 1989-09-08 | Nec Corp | ホットプレート式ベーキング装置 |
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JPH0268921A (ja) * | 1988-09-02 | 1990-03-08 | Tokyo Electron Ltd | レジスト処理装置 |
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JP2002217170A (ja) * | 2001-01-16 | 2002-08-02 | Semiconductor Leading Edge Technologies Inc | 微細パターンの形成方法、半導体装置の製造方法および半導体装置 |
JP2002233808A (ja) * | 2001-02-07 | 2002-08-20 | Tokyo Electron Ltd | 液処理装置 |
JP2002329770A (ja) * | 2001-05-02 | 2002-11-15 | Dainippon Screen Mfg Co Ltd | 基板検出装置、基板処理装置及びその運転方法。 |
JP2004299850A (ja) * | 2003-03-31 | 2004-10-28 | Dainippon Printing Co Ltd | 処理方法及び処理装置 |
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JP2010016053A (ja) * | 2008-07-01 | 2010-01-21 | Tokyo Electron Ltd | 被検査体の受け渡し機構 |
JP2011222834A (ja) * | 2010-04-12 | 2011-11-04 | Hoya Corp | ベーク処理装置、レジストパターン形成方法、フォトマスクの製造方法、及び、ナノインプリント用モールドの製造方法 |
KR101345997B1 (ko) * | 2012-06-04 | 2013-12-31 | 주식회사 테스 | 박막증착장치 |
Also Published As
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JP4762743B2 (ja) | 2011-08-31 |
US7628612B2 (en) | 2009-12-08 |
KR101287736B1 (ko) | 2013-07-23 |
US20070181557A1 (en) | 2007-08-09 |
KR20070081108A (ko) | 2007-08-14 |
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