JP2007150002A - 半導体ic内蔵基板及びその製造方法 - Google Patents
半導体ic内蔵基板及びその製造方法 Download PDFInfo
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Abstract
【解決手段】芯材に樹脂を含浸させてなるコア層101,102と、コア層101とコア層102との間に設けられた樹脂層111,112と、樹脂層111,112に埋め込まれた半導体IC120とを備える。コア層101,102の厚さは、いずれも100μm以下に設定されており、これにより、基板全体の厚さを十分に薄くすることが可能となる。しかも、強度の低い樹脂層111,112を堅いコア層101,102によって挟み込んでいることから、基板全体の強度が大幅に向上し、半導体IC120の破損などを防止することができる。
【選択図】図1
Description
T1<T2
を満たす熱剥離シート192,194を用いればよい。そして、支持基板191を剥離する際に加える温度Txを
T1≦Tx<T2
に設定すれば、後に取り付けた支持基板193を剥離することなく、先に取り付けた支持基板191だけを剥離することが可能となる。
101,102 コア層
101a,101b,102a,112a 貫通孔
111,112 樹脂層
120 半導体IC
120a 半導体ICの主面
120b 半導体ICの裏面
120c 半導体ICの側面
121 スタッドバンプ
121a パッド電極
122 金属層
129 ダイアタッチフィルム
130 アライメントマーク
130a,181,182 導体層
130b 凹部
131 原点
140,150,160 配線パターン
140a,150a,160a 配線パターンを形成すべき領域
141,151 下地導体層
171〜174 貫通電極
191,193 支持基板
192,194 熱剥離シート
201〜206 ドライフィルム
301 金型
302 突起
Claims (11)
- 芯材に樹脂を含浸させてなる第1及び第2のコア層と、前記第1のコア層と前記第2のコア層との間に設けられた少なくとも1層の樹脂層と、前記樹脂層に埋め込まれた半導体ICとを備え、前記第1及び第2のコア層の厚さがいずれも100μm以下であることを特徴とする半導体IC内蔵基板。
- 前記少なくとも1層の樹脂層は、前記半導体ICの主面に接して設けられた第1の樹脂層と、前記半導体ICの裏面を覆う第2の樹脂層とを含んでおり、前記半導体ICの前記主面に設けられた導電性突起物が前記第1の樹脂層の表面から突出していることを特徴とする請求項1に記載の半導体IC内蔵基板。
- 前記半導体ICの前記裏面にはダイアタッチフィルムが設けられており、前記半導体ICの前記裏面は、前記ダイアタッチフィルムを介して前記第2の樹脂層に覆われていることを特徴とする請求項2に記載の半導体IC内蔵基板。
- 前記半導体ICが薄型化されていることを特徴とする請求項1乃至3のいずれか1項に記載の半導体IC内蔵基板。
- 芯材に樹脂を含浸させてなる第1のコア層を第1の支持基板上に固定する第1の工程と、
前記第1のコア基板上に、半導体ICが埋め込まれた少なくとも1層の樹脂層を形成する第2の工程と、
芯材に樹脂を含浸させてなる第2のコア層を前記樹脂層上に形成する第3の工程とを備えることを特徴とする半導体IC内蔵基板の製造方法。 - 前記第1の支持基板と前記第1のコア層は、第1の熱剥離シートによって固定されていることを特徴とする請求項5に記載の半導体IC内蔵基板の製造方法。
- 前記第1の支持基板を剥離した後、前記第1のコア層に貫通孔を形成する第4の工程をさらに備えることを特徴とする請求項5又は6に記載の半導体IC内蔵基板の製造方法。
- 前記第3の工程を行った後、前記第4の工程を行う前に、前記第2のコア層に貫通孔を形成する第5の工程をさらに備えることを特徴とする請求項7に記載の半導体IC内蔵基板の製造方法。
- 前記第5の工程を行った後、前記第4の工程を行う前に、前記第2のコア層を第2の支持基板によって固定する第6の工程をさらに備えることを特徴とする請求項8に記載の半導体IC内蔵基板の製造方法。
- 前記第2の支持基板と前記第2のコア層は、第2の熱剥離シートによって固定されており、前記第2の熱剥離シートの剥離温度は、前記第1の熱剥離シートの剥離温度よりも高いことを特徴とする請求項9に記載の半導体IC内蔵基板の製造方法。
- 前記第2の工程は、前記第1のコア基板上に第1の樹脂層を形成する工程と、裏面が前記第1の樹脂層側を向くように前記半導体ICを前記第1の樹脂層に搭載する工程と、前記半導体ICの主面を覆うように第2の樹脂層を形成する工程と、前記第2の樹脂層の厚さを減少させることにより、前記半導体ICの主面に設けられた導電性突起物を第2の樹脂層の一方の表面から突出させる工程とを含んでいることを特徴とする半導体請求項5乃至9のいずれか1項に記載のIC内蔵基板の製造方法。
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JP2005343062A JP4835124B2 (ja) | 2005-11-29 | 2005-11-29 | 半導体ic内蔵基板及びその製造方法 |
US11/603,884 US8188375B2 (en) | 2005-11-29 | 2006-11-22 | Multilayer circuit board and method for manufacturing the same |
AT06256011T ATE520290T1 (de) | 2005-11-29 | 2006-11-23 | Mehrschichtige leiterplatte und verfahren zur herstellung dazu |
EP06256011A EP1791409B1 (en) | 2005-11-29 | 2006-11-23 | Multilayer circuit board and method for manufacturing thereof |
US12/632,948 US8530752B2 (en) | 2005-11-29 | 2009-12-08 | Multilayer circuit board and method for manufacturing the same |
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Cited By (24)
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JP2007188986A (ja) * | 2006-01-12 | 2007-07-26 | Tdk Corp | 多層回路基板及びその製造方法 |
JP2008153536A (ja) * | 2006-12-19 | 2008-07-03 | Shinko Electric Ind Co Ltd | 電子部品内蔵基板および電子部品内蔵基板の製造方法 |
JP2009032720A (ja) * | 2007-07-24 | 2009-02-12 | Nec Corp | 半導体装置及びその製造方法 |
JP2009135492A (ja) * | 2007-11-30 | 2009-06-18 | Ibiden Co Ltd | 多層プリント配線板及び多層プリント配線板の製造方法 |
JP2009239247A (ja) * | 2008-03-27 | 2009-10-15 | Ibiden Co Ltd | 多層プリント配線板の製造方法 |
JP2010103398A (ja) * | 2008-10-27 | 2010-05-06 | Shinko Electric Ind Co Ltd | 電子部品内蔵基板及びその製造方法 |
JP2010183084A (ja) * | 2009-02-06 | 2010-08-19 | Imbera Electronics Oy | Emi保護を備えた電子モジュール |
JP2011187800A (ja) * | 2010-03-10 | 2011-09-22 | Shinko Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US8303752B2 (en) | 2008-08-29 | 2012-11-06 | Tdk Corporation | Method of manufacturing wiring board |
US8377752B2 (en) | 2010-02-05 | 2013-02-19 | Renesas Electronics Corporation | Semiconductor device and method of manufacturing the same |
KR101241699B1 (ko) | 2011-06-10 | 2013-03-11 | 엘지이노텍 주식회사 | 인쇄회로기판 및 그의 제조 방법 |
JP2013229548A (ja) * | 2012-03-27 | 2013-11-07 | Tdk Corp | 電子部品内蔵基板及びその製造方法 |
JP2014090201A (ja) * | 2008-05-30 | 2014-05-15 | At & S Austria Technologie & Systemtechnik Aktiengesellschaft | 少なくとも1つの電子構成部品をプリント回路基板に組み込むための方法、およびプリント回路基板 |
WO2014115288A1 (ja) * | 2013-01-24 | 2014-07-31 | 株式会社メイコー | 部品内蔵基板の製造方法 |
US9192058B2 (en) | 2014-01-08 | 2015-11-17 | Fujitsu Limited | Method for manufacturing component built-in substrate |
WO2018066113A1 (ja) * | 2016-10-06 | 2018-04-12 | 三井金属鉱業株式会社 | 多層配線板の製造方法 |
WO2018066114A1 (ja) * | 2016-10-06 | 2018-04-12 | 三井金属鉱業株式会社 | 多層配線板の製造方法 |
WO2018097265A1 (ja) * | 2016-11-28 | 2018-05-31 | 三井金属鉱業株式会社 | 多層配線板の製造方法 |
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