JP7112962B2 - 多層配線板の製造方法 - Google Patents
多層配線板の製造方法 Download PDFInfo
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- JP7112962B2 JP7112962B2 JP2018552984A JP2018552984A JP7112962B2 JP 7112962 B2 JP7112962 B2 JP 7112962B2 JP 2018552984 A JP2018552984 A JP 2018552984A JP 2018552984 A JP2018552984 A JP 2018552984A JP 7112962 B2 JP7112962 B2 JP 7112962B2
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Description
前記多層積層体の一方の面に、可溶性粘着層を介して、開口部を有する補強シートを積層する工程と、
前記開口部を介して、前記可溶性粘着層を溶解可能な液体を、前記可溶性粘着層に接触又は浸透させ、それにより前記可溶性粘着層を溶解又は軟化させる工程と、
前記補強シートを前記多層積層体から前記可溶性粘着層の位置で剥離して多層配線板を得る工程と、
を含む、多層配線板の製造方法が提供される。
本発明による多層配線板の製造方法は、(1)所望により用いられる積層シートの用意、(2)多層積層体の作製、(3)補強シートの積層、(4)所望により行われる基材の剥離、(5)所望により行われる金属層のエッチング除去、(6)所望により行われる第1配線層の表面処理、(7)所望により行われる電子素子の搭載、(8)可溶性粘着層の溶解又は軟化、及び(9)補強シートの剥離の各工程を含む。
所望により、図1(a)に示されるように、多層配線板を形成するためのベースとなる積層シート10を用意する。積層シート10は、基材12、剥離層14及び金属層16を順に備える。積層シート10は、いわゆるキャリア付銅箔の形態であってもよい。積層シート10の本発明の好ましい態様については後述するものとする。
図1(b)及び(c)に示されるように、配線層18及び絶縁層20を交互に形成して多層積層体26を作製する。図1(b)及び(c)に示される配線層18及び絶縁層20で構成される逐次積層構造は、ビルドアップ層ないしビルドアップ配線層と一般的に称されるものであるが、本発明の製造方法においては、一般的にプリント配線板において採用される公知のビルドアップ配線層の構成のみからなる多層積層体の形成方法のみならず、予め形成されたバンプ付の多層積層体の一部となる積層体を、絶縁性接着剤を介して積層する方法等も採用することができ、特に限定されない。
図1(d)に示されるように、多層積層体26の一方の面(例えば多層積層体26の積層シート10と反対側の表面)に可溶性粘着層28を介して補強シート30を積層する。これにより、多層積層体26は補強シート30によって局部的に大きく湾曲されないように補強されることができる。すなわち、剥離時や湾曲が効果的に防止ないし抑制される。こうして、湾曲により引き起こされることがあるビルドアップ配線層内部の配線層の断線や剥離を回避して、多層配線層の接続信頼性を向上することができる。また、湾曲が効果的に防止ないし抑制されることで、多層配線層表面の平坦性(コプラナリティ)を向上することができる。
積層シート10を用いる場合、図2(e)に示されるように、補強シート30の積層後で、かつ、補強シート30の剥離前に、基材12を金属層16から剥離層14で剥離するのが好ましい。すなわち、基材12、密着金属層(存在する場合)、剥離補助層(存在する場合)、及び剥離層14が剥離除去される。この剥離除去は、物理的な剥離により行われるのが好ましい。物理的分離法は、手や治工具、機械等で基材12等をビルドアップ配線層から引き剥がすことにより分離する手法である。このとき、可溶性粘着層28を介して密着した補強シート30が多層積層体26を補強していることで、多層積層体26が局部的に大きく湾曲するのを防止することができる。すなわち、補強シート30は、基材12が剥離される間、引き剥がし力に抗すべく多層積層体26を補強し、湾曲をより一層効果的に防止ないし抑制することができる。こうして、湾曲により引き起こされることがあるビルドアップ配線層内部の配線層の断線や剥離を回避して、多層配線層の接続信頼性を向上することができる。また、湾曲が効果的に防止ないし抑制されることで、多層配線層表面の平坦性(コプラナリティ)を向上することができる。
所望により、図2(f)に示されるように、補強シート30の剥離前に、金属層16をエッチングにより除去する。金属層16のエッチングは、フラッシュエッチング等の公知の手法に基づき行えばよい。
上記工程の後、必要に応じて、第1配線層18の表面には、ソルダ―レジスト層、表面金属処理層(例えば、OSP(Organic Solderbility Preservative)処理層、Auめっき層、Ni-Auめっき層等)、電子素子搭載用の金属ピラー、及び/又ははんだバンプ等が形成されていてもよい。
所望により、図2(g)に示されるように、補強シート30の積層後(或いは金属層16の除去又はその後の電気検査後)で、かつ、補強シート30の剥離前に、多層積層体26の補強シート30と反対側の表面に電子素子32を搭載させる。本発明の製造方法においては、可溶性粘着層28及び補強シート30を採用することで、電子素子32の搭載に有利となる優れた表面平坦性(コプラナリティ)を多層積層体26の表面(例えば第1配線層18を埋込み電極として含むビルドアップ配線層の表面)において実現することができる。すなわち、電子素子32の搭載時においても、多層積層体26は補強シート30によって局部的に大きく湾曲されずに済む。その結果、電子素子搭載の接続歩留まりを高くすることができる。
開口部30aを介して溶解液を可溶性粘着層28に接触又は浸透させ、それにより可溶性粘着層28を溶解又は軟化させる。前述のとおり、溶解液は可溶性粘着層28を溶解可能な液体を用いているため、可溶性粘着層28は溶解液と接触することで少なくとも部分的に溶解し、それによって可溶性粘着層28に溶解液が浸透しうる。そして、かかる溶解液との接触又は浸透は、可溶性粘着層28の溶解又は軟化をもたらし、多層積層体26と補強シート30との密着力を弱める又は無力化する。こうして、次の工程における補強シート30の剥離を、溶解剥離又はそれに準じた手法を用いて、極めて容易に行うことができる。すなわち、役目を果たした補強シート30の剥離を多層積層体26に与える応力を最小化しながら極めて短時間で行うことができる。
図3(h)及び(i)に示されるように、補強シート30を多層積層体26から可溶性粘着層28の位置で剥離して多層配線板40を得る。補強シート30は可溶性粘着層28の溶解又は軟化に起因して極めて剥離しやすい状態となっている(又は場合によっては部分的に自然剥離している)ため、手や治工具、機械等で補強シート30を多層積層体26から軽く引き剥がすことにより極めて容易に分離することができる。したがって、多層積層体26に与える応力を最小化しながら極めて短時間で補強シート30の剥離を行うことができる。こうして多層積層体26に加わる応力が最小化されることで、多層配線板40における配線の断線や実装部の断線を効果的に回避することができる。また、上記応力の低減のために可溶性粘着層28を用いることを考えたとしても、それだけでは溶剤剥離に多大な時間を要するところ、本発明の方法によれば開口部30aを活用して溶解液との接触又は浸透を促進することで、補強シート30の剥離に要する時間の飛躍的な短縮化を実現することができる。
基材12及び/又は補強シート30の少なくとも一辺がビルドアップ配線層の端部から延出しているのが好ましい。こうすることで、基材ないし補強シートを剥離する際、端部を把持することが可能となり、剥離を容易にすることができるとの利点がある。
前述したとおり、本発明の方法において所望により用いられる積層シート10は、基材12、剥離層14及び金属層16を順に備える。積層シート10は、いわゆるキャリア付銅箔の形態であってもよい。
Claims (8)
- 基材、剥離層及び金属層をこの順に備えた積層シートを用意する工程と、
前記金属層の表面に第1配線層を形成し、前記積層シートの前記第1配線層が形成された面に絶縁層及び第n配線層(nは2以上の整数)を交互に形成して多層積層体を作製する工程と、
前記多層積層体の一方の面に、可溶性粘着層を介して、開口部を有する補強シートを積層する工程と、
前記開口部を介して、前記可溶性粘着層を溶解可能な液体を、前記可溶性粘着層に接触又は浸透させ、それにより前記可溶性粘着層を溶解又は軟化させる工程と、
前記補強シートを前記多層積層体から前記可溶性粘着層の位置で剥離して多層配線板を得る工程と、
を含み、前記補強シートのビッカース硬度が200~500HVであり、かつ、前記基材のビッカース硬度が600~2000HVである、多層配線板の製造方法。 - 前記補強シートが、
前記補強シートの少なくとも外周に沿って設けられ、前記開口部が存在しない補強領域と、
前記補強領域によって囲まれ、前記開口部を含む通液性領域と、
を有する、請求項1に記載の方法。 - 前記補強シートは3~90%の空孔率を有し、前記空孔率は、前記補強シートの外形体積に対する、前記通液性領域における総空孔体積の割合である、請求項2に記載の方法。
- 前記可溶性粘着層が溶液可溶型樹脂を含む、請求項1~3のいずれか一項に記載の方法。
- 前記可溶性粘着層が酸可溶型樹脂又はアルカリ可溶型樹脂を含む、請求項1~4のいずれか一項に記載の方法。
- 前記補強シートの積層後で、かつ、前記補強シートの剥離前に、前記多層積層体の補強シートと反対側の表面に電子素子を搭載させる工程をさらに含む、請求項1~5のいずれか一項に記載の方法。
- 前記補強シートの積層後で、かつ、前記補強シートの剥離前に、前記基材を前記金属層から前記剥離層で剥離する工程をさらに含む、請求項1~6のいずれか一項に記載の方法。
- 前記補強シートの剥離前に、前記金属層をエッチングにより除去する工程をさらに含む、請求項1~7のいずれか一項に記載の方法。
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US11935865B2 (en) | 2018-11-21 | 2024-03-19 | Mitsui Mining & Smelting Co., Ltd. | Semiconductor package manufacturing method, and adhesive sheet used therein |
JP7253946B2 (ja) * | 2019-03-20 | 2023-04-07 | 新光電気工業株式会社 | 配線基板及びその製造方法、半導体パッケージ |
CN110400756B (zh) * | 2019-04-29 | 2020-10-13 | 深超光电(深圳)有限公司 | 重布线路结构的制备方法 |
JP7362378B2 (ja) * | 2019-09-12 | 2023-10-17 | 株式会社東芝 | キャリア及び半導体装置の製造方法 |
US11923285B2 (en) | 2021-01-05 | 2024-03-05 | Advanced Semiconductor Engineering, Inc. | Electronic device package and method of manufacturing the same |
WO2024154787A1 (ja) * | 2023-01-18 | 2024-07-25 | 大日本印刷株式会社 | 配線基板群及びその製造方法並びに配線基板及びその製造方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003158239A (ja) | 2001-11-22 | 2003-05-30 | Sony Corp | マルチチップ回路モジュール及びその製造方法 |
JP2005191550A (ja) | 2003-12-01 | 2005-07-14 | Tokyo Ohka Kogyo Co Ltd | 基板の貼り付け方法 |
JP2007150002A (ja) | 2005-11-29 | 2007-06-14 | Tdk Corp | 半導体ic内蔵基板及びその製造方法 |
JP2011508448A (ja) | 2007-12-27 | 2011-03-10 | フリースケール セミコンダクター インコーポレイテッド | 電子アセンブリ製造方法 |
JP2013069808A (ja) | 2011-09-21 | 2013-04-18 | Shinko Electric Ind Co Ltd | 半導体パッケージ及びその製造方法 |
WO2016067422A1 (ja) | 2014-10-30 | 2016-05-06 | 三井金属鉱業株式会社 | キャリア付銅箔及びそれを用いたプリント配線板の製造方法 |
JP2016167487A (ja) | 2015-03-09 | 2016-09-15 | 富士通株式会社 | 配線基板の製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4273895B2 (ja) | 2003-09-24 | 2009-06-03 | 日立化成工業株式会社 | 半導体素子搭載用パッケージ基板の製造方法 |
US8188375B2 (en) * | 2005-11-29 | 2012-05-29 | Tok Corporation | Multilayer circuit board and method for manufacturing the same |
JP5324051B2 (ja) | 2007-03-29 | 2013-10-23 | 新光電気工業株式会社 | 配線基板の製造方法及び半導体装置の製造方法及び配線基板 |
JP5840131B2 (ja) * | 2010-09-13 | 2016-01-06 | 株式会社カネカ | 補強板一体型フレキシブルプリント基板、及び補強板一体型フレキシブルプリント基板の製造方法 |
JP5225451B2 (ja) * | 2011-11-04 | 2013-07-03 | 新光電気工業株式会社 | 配線基板の製造方法及び半導体パッケージの製造方法 |
JP5913914B2 (ja) * | 2011-11-08 | 2016-04-27 | 東京応化工業株式会社 | 基板処理装置及び基板処理方法 |
JP2015035551A (ja) | 2013-08-09 | 2015-02-19 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP6201610B2 (ja) | 2013-10-08 | 2017-09-27 | 富士通株式会社 | 電子装置の製造方法及び回路基板 |
JP6299290B2 (ja) | 2014-03-07 | 2018-03-28 | 富士通株式会社 | 回路基板の製造方法 |
TWI488549B (zh) | 2014-03-07 | 2015-06-11 | Azotek Co Ltd | 金屬基板及其製作方法 |
-
2017
- 2017-11-24 KR KR1020197012599A patent/KR20190088465A/ko unknown
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003158239A (ja) | 2001-11-22 | 2003-05-30 | Sony Corp | マルチチップ回路モジュール及びその製造方法 |
JP2005191550A (ja) | 2003-12-01 | 2005-07-14 | Tokyo Ohka Kogyo Co Ltd | 基板の貼り付け方法 |
JP2007150002A (ja) | 2005-11-29 | 2007-06-14 | Tdk Corp | 半導体ic内蔵基板及びその製造方法 |
JP2011508448A (ja) | 2007-12-27 | 2011-03-10 | フリースケール セミコンダクター インコーポレイテッド | 電子アセンブリ製造方法 |
JP2013069808A (ja) | 2011-09-21 | 2013-04-18 | Shinko Electric Ind Co Ltd | 半導体パッケージ及びその製造方法 |
WO2016067422A1 (ja) | 2014-10-30 | 2016-05-06 | 三井金属鉱業株式会社 | キャリア付銅箔及びそれを用いたプリント配線板の製造方法 |
JP2016167487A (ja) | 2015-03-09 | 2016-09-15 | 富士通株式会社 | 配線基板の製造方法 |
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TW201828788A (zh) | 2018-08-01 |
JPWO2018097264A1 (ja) | 2019-10-17 |
CN116709672A (zh) | 2023-09-05 |
US20190378727A1 (en) | 2019-12-12 |
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