JP2007127130A - インシトゥーゲッターポンプ装置及び方法 - Google Patents
インシトゥーゲッターポンプ装置及び方法 Download PDFInfo
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- JP2007127130A JP2007127130A JP2007004790A JP2007004790A JP2007127130A JP 2007127130 A JP2007127130 A JP 2007127130A JP 2007004790 A JP2007004790 A JP 2007004790A JP 2007004790 A JP2007004790 A JP 2007004790A JP 2007127130 A JP2007127130 A JP 2007127130A
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- getter
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- gas
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- 238000011065 in-situ storage Methods 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims description 46
- 239000007789 gas Substances 0.000 claims abstract description 63
- 238000010438 heat treatment Methods 0.000 claims abstract description 43
- 229910052756 noble gas Inorganic materials 0.000 claims abstract description 43
- 238000005086 pumping Methods 0.000 claims abstract description 26
- 150000002835 noble gases Chemical class 0.000 claims abstract description 16
- 230000007246 mechanism Effects 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 58
- 229910000986 non-evaporable getter Inorganic materials 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 3
- 238000003672 processing method Methods 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims 1
- 230000008878 coupling Effects 0.000 abstract description 2
- 238000010168 coupling process Methods 0.000 abstract description 2
- 238000005859 coupling reaction Methods 0.000 abstract description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 48
- 230000008569 process Effects 0.000 description 29
- 229910052786 argon Inorganic materials 0.000 description 25
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 21
- 239000001257 hydrogen Substances 0.000 description 20
- 229910052739 hydrogen Inorganic materials 0.000 description 20
- 238000004544 sputter deposition Methods 0.000 description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 14
- 239000000203 mixture Substances 0.000 description 13
- 238000001275 scanning Auger electron spectroscopy Methods 0.000 description 9
- 230000004913 activation Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000007689 inspection Methods 0.000 description 5
- 230000008929 regeneration Effects 0.000 description 5
- 238000011069 regeneration method Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000008439 repair process Effects 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- -1 argon ions Chemical class 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- 108010083687 Ion Pumps Proteins 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 102000006391 Ion Pumps Human genes 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004870 electrical engineering Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000013386 optimize process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 210000003813 thumb Anatomy 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
- F04B37/00—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00
- F04B37/02—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for evacuating by absorption or adsorption
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
- F04B37/00—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00
- F04B37/06—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for evacuating by thermal means
- F04B37/08—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for evacuating by thermal means by condensing or freezing, e.g. cryogenic pumps
Abstract
【課題】異なる非希ガスが異なる温度にて選択的に排気されるように加熱装置を有するインシトゥーゲッターポンプを提供する。
【解決手段】本ウェハー処理装置は、処理チャンバーと、チャンバーから希ガスを排気するめために処理チャンバーと結合されている低圧ポンプと、希ガス源と処理チャンバーとを結合するバルブ機構と、処理チャンバー内に配置されていると共に、希ガスの流れが前記チャンバー内へ流入する間、特定の非希ガスを排気し得るインシトゥーゲッターポンプと、処理チャンバー内に配置されるウェハーを処理するための処理システムとを備える。インシトゥーゲッターポンプは、異なる温度で異なる種類のガスを選択的に排気するために数多くの異なる温度にて作用することが好ましい。ガス分析装置は、チャンバーから排気されるガスの種類を制御すべくゲッターポンプの温度を自動的に制御するために用いられる。
【選択図】図8
Description
一対の平面を定義する。このことは、例えば、選択ガスの吸着を促進し得る。
しかしながら、良好に構成されているプロセスでは、ゲッターモジュール、及びそれらの操作パラメータは、ほとんどの一般的な条件下において良好に作動するように固定され得る。
Claims (5)
- 複数の内部表面を有する処理チャンバーと、
前記処理チャンバー内に配置されると共に、異なる非希ガスが異なる温度にて選択的に排気されるように1つ以上の温度で作用し得るように加熱装置を有する非蒸発性のインシトゥーゲッターポンプと、
前記処理チャンバー内に配置されるウェハーを処理するための処理機構と、
を備えるウェハー処理装置。 - 内部に複数の内部表面を有する封止可能なエンクロージャーと、
前記エンクロージャーが封止されたとき、それにより異なるゲッター物質温度で異なる非希ガスが排気されるよう前記エンクロージャーに配置されると共に、1つ以上の温度で作用し得る、ゲッター物資を有する非蒸発性のインシトゥーゲッターポンプ装置と、
を備える処理装置。 - ウェハーを処理チャンバー内に配置し、そのチャンバーを封止するステップと、
希ガスを排気すると共に、約10−7Torr以上の真空を達成するためにガスを有効に排気する外部ポンプと、前記チャンバー内に配置されると共に非希ガスを排気する非蒸発性のインシトゥーポンプであって、前記チャンバーに関して理論最大ポンピング速度の少なくとも75%のポンピング速度を有する固体の活性エレメントを有する前記インシトゥーポンプとによって前記チャンバーを排気する間、同時に前記チャンバー内に希ガスを流し込むステップと、
前記希ガスが流れ続ける間、前記チャンバー内のウェハーを処理するステップと、
を備えるウェハー処理方法。 - エンクロージャーを封止するステップと、
前記エンクロージャーが封止されたとき、異なる温度で異なる非希ガスが排気されるよう、前記エンクロージャー内に配置されると共に、1つ以上の温度で作用し得る非蒸発性のインシトゥーゲッターポンプによって前記エンクロージャーを排気するステップと、
を備えるチャンバー排気方法。 - 処理チャンバーと、
前記処理チャンバーと結合されていると共に、約10−7Torr以上の真空を達成するためにガスを有効に排気する、前記チャンバーから希ガスを排気することのできる第1ポンプと、
前記希ガスが連続的に前記処理チャンバー内に流れ込むように希ガス源と前記処理チャンバーとを結合するバルブ機構と、
前記処理チャンバー内に配置されていると共に、前記希ガスの流れが前記チャンバー内へ流入する間、非希ガスを排気し得る非蒸発性のゲッター物質を有するインシトゥーゲッターポンプであって、前記希ガスを実質的に排気せず、且つ、前記処理チャンバー内側の少なくともいくつかの被加熱表面から前記非蒸発性のゲッター物質を熱保護するための熱シールドを有するインシトゥーゲッターポンプと、
前記処理チャンバー内に配置されるウェハーを処理するための処理装置と、
を備えるウェハー処理装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/332,564 US5685963A (en) | 1994-10-31 | 1994-10-31 | In situ getter pump system and method |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51484096A Division JP3943128B2 (ja) | 1994-10-31 | 1995-10-30 | インシトゥーゲッターポンプ装置及び方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007127130A true JP2007127130A (ja) | 2007-05-24 |
JP4580943B2 JP4580943B2 (ja) | 2010-11-17 |
Family
ID=23298801
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51484096A Expired - Fee Related JP3943128B2 (ja) | 1994-10-31 | 1995-10-30 | インシトゥーゲッターポンプ装置及び方法 |
JP2007004790A Expired - Fee Related JP4580943B2 (ja) | 1994-10-31 | 2007-01-12 | インシトゥーゲッターポンプ装置及び方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51484096A Expired - Fee Related JP3943128B2 (ja) | 1994-10-31 | 1995-10-30 | インシトゥーゲッターポンプ装置及び方法 |
Country Status (15)
Country | Link |
---|---|
US (4) | US5685963A (ja) |
EP (1) | EP0789788B1 (ja) |
JP (2) | JP3943128B2 (ja) |
KR (1) | KR100304449B1 (ja) |
CN (2) | CN100363534C (ja) |
AT (1) | ATE239107T1 (ja) |
AU (1) | AU4140896A (ja) |
BR (1) | BR9509456A (ja) |
CA (1) | CA2203904C (ja) |
DE (1) | DE69530603T2 (ja) |
MX (1) | MX9703155A (ja) |
MY (1) | MY114534A (ja) |
RU (1) | RU2125619C1 (ja) |
TW (1) | TW353706B (ja) |
WO (1) | WO1996013620A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015531457A (ja) * | 2012-10-15 | 2015-11-02 | サエス・ゲッターズ・エッセ・ピ・ア | ゲッターポンプ |
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US5911560A (en) * | 1994-10-31 | 1999-06-15 | Saes Pure Gas, Inc. | Getter pump module and system |
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US5685963A (en) * | 1994-10-31 | 1997-11-11 | Saes Pure Gas, Inc. | In situ getter pump system and method |
US5908579A (en) * | 1994-12-02 | 1999-06-01 | Saes Getters, S.P.A. | Process for producing high-porosity non-evaporable getter materials and materials thus obtained |
TW287117B (ja) * | 1994-12-02 | 1996-10-01 | Getters Spa | |
US6110807A (en) * | 1995-06-07 | 2000-08-29 | Saes Getters S.P.A. | Process for producing high-porosity non-evaporable getter materials |
US5935395A (en) * | 1995-11-08 | 1999-08-10 | Mitel Corporation | Substrate processing apparatus with non-evaporable getter pump |
US5778682A (en) * | 1996-06-20 | 1998-07-14 | Mitel Corporation | Reactive PVD with NEG pump |
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US6207027B1 (en) * | 1997-05-07 | 2001-03-27 | Applied Materials, Inc. | Method to reduce overhead time in an ion metal plasma process |
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US6068685A (en) * | 1997-10-15 | 2000-05-30 | Saes Pure Gas, Inc. | Semiconductor manufacturing system with getter safety device |
CA2254515A1 (en) * | 1997-12-23 | 1999-06-23 | Andrea Conte | Getter system for purifying the work atmosphere in the processes of physical vapor deposition |
JPH11230036A (ja) | 1998-02-18 | 1999-08-24 | Ebara Corp | 真空排気システム |
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- 1995-10-30 CN CNB2004100557933A patent/CN100363534C/zh not_active Expired - Fee Related
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- 1995-10-30 WO PCT/US1995/014154 patent/WO1996013620A1/en active IP Right Grant
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Also Published As
Publication number | Publication date |
---|---|
DE69530603T2 (de) | 2004-02-12 |
DE69530603D1 (de) | 2003-06-05 |
CN100363534C (zh) | 2008-01-23 |
CA2203904C (en) | 2002-02-12 |
JPH10508078A (ja) | 1998-08-04 |
CN1177079C (zh) | 2004-11-24 |
KR970707315A (ko) | 1997-12-01 |
AU4140896A (en) | 1996-05-23 |
BR9509456A (pt) | 1997-09-16 |
TW353706B (en) | 1999-03-01 |
US5993165A (en) | 1999-11-30 |
US5685963A (en) | 1997-11-11 |
ATE239107T1 (de) | 2003-05-15 |
KR100304449B1 (ko) | 2001-09-29 |
US5879134A (en) | 1999-03-09 |
WO1996013620A1 (en) | 1996-05-09 |
CN1170441A (zh) | 1998-01-14 |
JP4580943B2 (ja) | 2010-11-17 |
EP0789788A1 (en) | 1997-08-20 |
CA2203904A1 (en) | 1996-05-09 |
US6165328A (en) | 2000-12-26 |
CN1609447A (zh) | 2005-04-27 |
MY114534A (en) | 2002-11-30 |
EP0789788B1 (en) | 2003-05-02 |
JP3943128B2 (ja) | 2007-07-11 |
RU2125619C1 (ru) | 1999-01-27 |
MX9703155A (es) | 1997-12-31 |
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