JP2007072453A - 半導体装置並びに当該半導体装置を具備する表示装置及び電子機器 - Google Patents
半導体装置並びに当該半導体装置を具備する表示装置及び電子機器 Download PDFInfo
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- 230000000737 periodic effect Effects 0.000 description 1
- 150000005041 phenanthrolines Chemical class 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- GWDUZCIBPDVBJM-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzothiazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1 GWDUZCIBPDVBJM-UHFFFAOYSA-L 0.000 description 1
- QEPMORHSGFRDLW-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzoxazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1 QEPMORHSGFRDLW-UHFFFAOYSA-L 0.000 description 1
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
- Electroluminescent Light Sources (AREA)
- Logic Circuits (AREA)
- Thin Film Transistor (AREA)
Abstract
【解決手段】トランジスタに所定の電流を流してトランジスタのゲート・ソース間電圧を設定する際、トランジスタのソース端子に接続された負荷に電流が流れないようにするため、トランジスタのゲート端子の電位を調整する。そのため、トランジスタのゲート端子の接続された配線とトランジスタのドレイン端子の接続された配線とを異なる電位にする。またその際、トランジスタの動作を切り替えることで大きな電流を流し、配線などに寄生する交差容量や配線抵抗の影響を受けにくくして、すばやく、設定動作を行うことができる。
【選択図】図1
Description
T.Shirasaki et al,SID’04 Digest P1516〜1519 (2004)
また、例えば、ゲート電極とゲート配線とを接続してさせている部分の導電膜も、ゲート電極と呼んでも良いし、ゲート配線と呼んでも良い。
本発明は、EL素子を有する画素だけでなく、電流源を有する様々なアナログ回路に適用することが出来る。そこでまず、本実施の形態では、本発明の基本原理について述べる。
本実施の形態においては実施の形態1で述べた図1のアナログ回路とは別の構成について述べる。
本実施の形態においては上記実施の形態で述べたアナログ回路とは別の構成について述べる。
本実施の形態においては上記実施の形態で述べたアナログ回路とは別の構成について述べる。
本実施の形態においては上記実施の形態で述べたアナログ回路とは別の構成について述べる。
本実施の形態においては上記実施の形態で述べたアナログ回路とは別の構成について述べる。
102 切り替えトランジスタ
103 スイッチ
104 容量素子
105 スイッチ
106 スイッチ
107 電流源
108 負荷
109 配線
110 配線
111 配線
112 配線
201 破線矢印
202 スイッチングトランジスタ
301 破線矢印
604 容量素子
701 スイッチ
702 配線
801 破線矢印
901 破線矢印
1101 切り替えトランジスタ
1102 スイッチ
1201 電流源トランジスタ
1202 切り替えトランジスタ
1203 スイッチ
1204 容量素子
1205 スイッチ
1207 電流源
1208 負荷
1209 配線
1210 配線
1211 配線
1212 配線
1301 破線矢印
1401 破線矢印
1404 容量素子
1601 切り替えトランジスタ
1602 スイッチ
1701 電流源トランジスタ
1702 切り替えトランジスタ
1703 スイッチ
1704 容量素子
1705 スイッチ
1706 スイッチ
1707 電流源
1708 負荷
1709 配線
1710 配線
1711 配線
1712 配線
1713 電流源
1714 スイッチ
1715 配線
1801 破線矢印
1901 破線矢印
2001 破線矢印
2101 電流源トランジスタ
2102 切り替えトランジスタ
2103 スイッチ
2104 スイッチ
2105 配線
2201 破線矢印
2301 破線矢印
2701 電流源トランジスタ
2702 切り替えトランジスタ
2807 電流源
2809 配線
2810 配線
2811 配線
2812 配線
2815 配線
2901 破線矢印
3001 破線矢印
3101 電流源トランジスタ
3102 切り替えトランジスタ
3103 スイッチ
3104 スイッチ
3105 配線
3106 スイッチ
3107 電流源
3108 配線
3201 破線矢印
3301 破線矢印
3401 破線矢印
3507 信号分割回路
3801 電流源トランジスタ
3802 切り替えトランジスタ
3803 スイッチ
3804 容量素子
3805 スイッチ
3806 スイッチ
3807 電流源
3808 負荷
3809 配線
3810 配線
3901 破線矢印
4001 破線矢印
4101 破線矢印
4201 表示装置
4202 画素領域
4203 ゲート線駆動回路
4204 信号線駆動回路
4205 シフトレジスタ
4206 第1ラッチ回路
4207 第2ラッチ回路
4208 デジタル・アナログ変換回路
4209 リファレンス用電流源回路
4301 リファレンス用電流源回路
4400 電流源回路
4401 電流源トランジスタ
4402 切り替えトランジスタ
4403 スイッチ用トランジスタ
4404 容量素子
4405 スイッチ用トランジスタ
4406 スイッチ用トランジスタ
4407 電流源
4408 負荷
4409 配線
4410 配線
4411 配線
4413 配線
4601 電流源トランジスタ
4602 切り替えトランジスタ
4603 スイッチ
4604 容量素子
4605 スイッチ
4606 スイッチ
4608 表示素子
4609 配線
4610 配線
4611 配線
4612 対向電極
4614 配線
4615 配線
4703 スイッチングトランジスタ
4705 スイッチングトランジスタ
4706 スイッチングトランジスタ
4714 配線
4801 電流源
4812 配線
4901 信号線駆動回路
4902 走査線駆動回路
4903 画素部
4904 画素
5001 配線A
5002 配線B
5103 スイッチ
5104 容量素子
5105 スイッチ
5106 スイッチ
5108 表示素子
5109 配線
5110 配線
5111 配線
5112 対向電極
5114 配線
5201 電流源
5212 配線
5501 スイッチ
5502 スイッチ
5503 プリチャージ用電流源
5504 配線
5505 配線
5601 電流源トランジスタ
5602 切り替えトランジスタ
5603 スイッチングトランジスタ
5604 容量素子
5605 スイッチングトランジスタ
5606 スイッチングトランジスタ
5608 表示素子
5609 配線
5610 配線
5611 配線
5612 対向電極
5614 配線
5615 配線
5701 電流源
5712 配線
5803 スイッチングトランジスタ
5805 スイッチングトランジスタ
5806 スイッチングトランジスタ
6201 マルチゲートトランジスタ
6501 スイッチ
6502 配線
6601 整流素子
6602 配線
6701 信号線駆動回路
6702 画素部
6703 走査線駆動回路
6704 封止基板
6705 シール材
6706 走査線駆動回路
6707 空間
6708 配線
6709 FPC
6710 基板
6711 TFT
6712 TFT
6713 電極
6714 絶縁物
6716 層
6717 電極
6718 発光素子
6719 ICチップ
6720 Nチャネル型TFT
6721 Nチャネル型TFT
6740 基板
6800 基板
6801 信号線駆動回路
6802 画素部
6803 走査線駆動回路
6804 走査線駆動回路
6805 FPC
6806 ICチップ
6807 ICチップ
6808 封止基板
6809 シール材
6810 基板
6811 信号線駆動回路
6812 画素部
6813 走査線駆動回路
6814 走査線駆動回路
6815 第FPC
6816 ICチップ
6817 ICチップ
6818 封止基板
6819 シール材
6900 基板
6901 周辺駆動回路
6902 画素部
6904 第FPC
6905 ICチップ
6906 ICチップ
6907 封止基板
6908 シール材
6910 基板
6911 周辺駆動回路
6912 画素部
6913 FPC
6914 FPC
7001 基板
7002 陽極
7003 正孔注入層
7004 正孔輸送層
7005 発光層
7006 電子輸送層
7007 電子注入層
7008 陰極
7011 基板
7012 陽極
7013 正孔注入層
7014 正孔輸送層
7015 発光層
7016 電子輸送層
7017 電子注入層
7018 陰極
7100 基板
7101 駆動用TFT
7102 電極
7103 層
7104 電極
7200 基板
7201 駆動用TFT
7202 下地膜
7203 電極
7204 層
7205 電極
7501 基板
7502 下地膜
7503 ゲート電極
7504 電極
7505 ゲート絶縁膜
7506 チャネル形成領域
7507 LDD領域
7508 不純物領域
7509 チャネル形成領域
7510 LDD領域
7511 不純物領域
7512 層間絶縁物
7513 配線
7514 電極
7515 開口部
7516 層間絶縁物
7517 画素電極
7518 絶縁物
7519 層
7520 対向電極
7521 発光素子
7522 駆動トランジスタ
7523 容量素子
7524 電極
7525 容量素子
7601 基板
7602 下地膜
7603 画素電極
7604 電極
7605 配線
7606 配線
7607 N型半導体層
7608 N型半導体層
7609 半導体層
7610 ゲート絶縁膜
7611 絶縁膜
7612 ゲート電極
7613 電極
7614 層間絶縁物
7615 層
7616 対向電極
7617 発光素子
7618 駆動トランジスタ
7619 容量素子
7620 電極
7701 基板
7702 下地膜
7703 ゲート電極
7704 電極
7705 ゲート絶縁膜
7706 半導体層
7707 半導体層
7708 N型半導体層
7710 N型半導体層
7711 配線
7713 導電層
7714 画素電極
7715 絶縁物
7716 層
7717 対向電極
7718 発光素子
7719 駆動トランジスタ
7720 容量素子
7721 電極
7722 容量素子
7801 絶縁物
7802 絶縁物
7901 表示パネル
7902 画素部
7903 走査線駆動回路
7904 信号線駆動回路
7911 回路基板
7912 コントロール回路
7913 信号分割回路
7914 接続配線
8001 チューナ
8002 映像波増幅回路
8003 映像信号処理回路
8004 信号線駆動回路
8005 音声波増幅回路
8006 音声信号処理回路
8007 スピーカー
8008 制御回路
8009 入力部
8010 表示パネル
8011 走査線駆動回路
8012 コントロール回路
8013 信号分割回路
8102 表示画面
8103 スピーカー
8104 操作スイッチ
8110 充電器
8112 筐体
8113 表示部
8116 操作キー
8117 スピーカー部
8201 表示パネル
8202 プリント配線基板
8203 画素部
8204 走査線駆動回路
8205 走査線駆動回路
8206 信号線駆動回路
8207 コントローラ
8208 CPU
8209 メモリ
8210 電源回路
8211 音声処理回路
8212 送受信回路
8213 フレキシブル配線基板
8214 インターフェイス部
8215 アンテナ用ポート
8216 VRAM
8217 DRAM
8218 フラッシュメモリ
8219 インターフェース
8220 制御信号生成回路
8221 デコーダ
8222 レジスタ
8223 演算回路
8224 RAM
8225 入力手段
8226 マイク
8227 スピーカー
8228 アンテナ
8301 表示パネル
8313 FPC
8330 ハウジング
8331 プリント基板
8332 スピーカー
8333 マイクロフォン
8334 送受信回路
8335 信号処理回路
8336 入力手段
8337 バッテリー
8339 筐体
8501 スイッチ
8502 配線
8601 スイッチ
8602 配線
8603 ノード
8701 基板
8702 下地膜
8703 チャネル形成領域
8704 不純物領域
8705 低濃度不純物領域
8706 ゲート絶縁膜
8707 ゲート電極
8708 層間絶縁物
8709 電極
8710 層間絶縁物
8711 画素電極
8712 絶縁物
8713 層
8714 対向電極
8715 トランジスタ
8716 発光素子
8717 接合部
8718 無機絶縁膜
8719 配線
8720 電極
8721 電極
8722 サイドウォール
8723 トランジスタ
8724 電極
8901 信号線駆動回路
8902 走査線駆動回路
8903 画素部
8904 画素
8905 走査線駆動回路
8906 パルス出力回路
8907 パルス出力回路
8908 スイッチ
8909 スイッチ
9201 電流源トランジスタ
9202 切り替えトランジスタ
9203 スイッチ
9204 容量素子
9205 スイッチ
9206 スイッチ
9207 電流源
9208 負荷
9209 配線
9211 配線
9212 配線
9213 スイッチ
9301 電流源トランジスタ
9302 切り替えトランジスタ
9303 スイッチ
9304 容量素子
9305 スイッチ
9308 負荷
9309 配線
9312 配線
9313 スイッチ
9601 電流源トランジスタ
9603 切り替えスイッチ
9604 容量素子
9605 スイッチ
9606 スイッチ
9607 電流源
9608 負荷
9609 配線
9611 配線
9612 配線
9701 電車車両本体
9702 表示パネル
9703 表示パネル
9704 表示パネル
9801 電柱
9802 表示パネル
9803 移動体
9901 車体
9902 表示パネル
10001 ユニットバス
10002 表示パネル
10101 飛行機車体
10102 表示パネル
10103 ヒンジ部
26101 基板
26102 下地膜
26103 チャネル形成領域
26105 不純物領域
26106 チャネル形成領域
26107 LDD領域
26108 不純物領域
26109 ゲート絶縁膜
26110 ゲート電極
26111 上部電極
26112 層間絶縁物
26113 配線
26114 画素電極
26115 層間絶縁物
26116 層
26117 対向電極
26118 駆動トランジスタ
26119 容量素子
26120 発光素子
26202 領域
26301 上部電極
26302 容量素子
27101 基板
27102 下地膜
27103 チャネル形成領域
27105 不純物領域
27106 ゲート絶縁膜
27107 ゲート電極
27108 電極
27109 層間絶縁物
27110 配線
27111 電極
27112 層間絶縁物
27113 画素電極
27114 電極
27115 層間絶縁物
27116 層
27117 対向電極
27118 駆動トランジスタ
27119 容量素子
27120 発光素子
4501A 電流源
4502A 電流源回路
4503A スイッチ
4902A 走査線駆動回路
4902B 走査線駆動回路
5101A 電流源トランジスタ
5101B 電流源トランジスタ
5102A 切り替えトランジスタ
5102B 切り替えトランジスタ
5103A スイッチA
5103B スイッチB
5105A 配線A
5105B 配線B
5115A 配線A
5115B 配線B
5116A スイッチA
5116B スイッチB
7206B カラーフィルター
7206G カラーフィルター
7206R カラーフィルター
84101 筐体
84102 支持台
84103 表示部
84201 本体
84202 表示部
84203 受像部
84204 操作キー
84205 外部接続ポート
84206 シャッター
84301 本体
84302 筐体
84303 表示部
84304 キーボード
84305 外部接続ポート
84306 ポインティングマウス
84401 本体
84402 表示部
84403 スイッチ
84404 操作キー
84405 赤外線ポート
84501 本体
84502 筐体
84503 表示部A
84504 表示部B
84505 部
84506 操作キー
84507 スピーカー部
84601 本体
84602 表示部
84603 イヤホン
84604 支持部
84701 筐体
84702 表示部
84703 スピーカー部
84704 操作キー
84705 記憶媒体挿入部
84801 本体
84802 表示部
84803 操作キー
84804 スピーカー
84805 シャッター
84806 受像部
84807 アンテナ
9306A スイッチ
9307A 電流源
9311A 配線
Claims (11)
- 第1の配線と、第2の配線と、第3の配線と、
第1のスイッチと、第2のスイッチと、
第1端子が前記第1の配線と電気的に接続され、ゲート端子が前記第1のスイッチを介して前記第2の配線と電気的に接続された第1のトランジスタと、
第1端子が前記第1のトランジスタの第2端子と電気的に接続され、ゲート端子が前記第1のスイッチを介して前記第2の配線と電気的に接続され、第2端子が負荷と電気的に接続され且つ前記第2のスイッチを介して前記第3の配線と電気的に接続された第2のトランジスタと、
前記第2のトランジスタのゲート端子と前記第2のトランジスタの第2端子との間に電気的に接続された容量素子と、
前記第1のトランジスタの第1の端子と前記第1のトランジスタの第2の端子との間を、短絡状態にする手段と、を有することを特徴とする半導体装置。 - 第1の配線と、第2の配線と、第3の配線と、
第1のスイッチと、第2のスイッチと、
第1端子が前記第1の配線と電気的に接続され、ゲート端子が前記第1のスイッチを介して前記第2の配線と電気的に接続された第1のトランジスタと、
第1端子が前記第1のトランジスタの第2端子と電気的に接続され、ゲート端子が前記第1のスイッチを介して前記第2の配線と電気的に接続され、第2端子が負荷と電気的に接続され且つ前記第2のスイッチを介して前記第3の配線と電気的に接続された第2のトランジスタと、
前記第2のトランジスタのゲート端子と前記第2のトランジスタの第2端子との間に電気的に接続された容量素子と、
前記第3の配線に電気的に接続された電流源と、
前記第1のトランジスタの第1の端子と前記第1のトランジスタの第2の端子との間を、短絡状態にする手段と、を有することを特徴とする半導体装置。 - 第1の配線と、第2の配線と、第3の配線と、第4の配線と、
第1のスイッチと、第2のスイッチと、
第1端子が前記第1の配線と電気的に接続され、ゲート端子が前記第1のスイッチを介して前記第2の配線と電気的に接続された第1のトランジスタと、
第1端子が前記第1のトランジスタの第2端子と電気的に接続され、ゲート端子が前記第1のスイッチを介して前記第2の配線と電気的に接続され、第2端子が負荷と電気的に接続され且つ前記第2のスイッチを介して前記第3の配線と電気的に接続された第2のトランジスタと、
前記第2のトランジスタのゲート端子と前記第2のトランジスタの第2端子との間に電気的に接続された容量素子と、
前記第3の配線に電気的に接続された第1の電流源及び前記第4の配線に電気的に接続された第2の電流源と、
前記第1のトランジスタの第1の端子と前記第1のトランジスタの第2の端子との間を、短絡状態にする手段と、を有することを特徴とする半導体装置。 - 請求項1乃至3のいずれか一項において、前記第1のスイッチ及び前記第2のスイッチはトランジスタであることを特徴とする半導体装置。
- 請求項1乃至4のいずれか一項において、
前記第1の配線の電位は、前記第2の配線の電位より高いことを特徴とする半導体装置。 - 請求項1乃至5のいずれか一項において、前記第1のトランジスタ及び前記第2のトランジスタは同じ導電型であることを特徴とする半導体装置。
- 請求項1乃至6のいずれか一項において、前記短絡状態にする手段は前記第1のトランジスタの第1端子及び第2端子に電気的に接続されたスイッチであることを特徴とする半導体装置。
- 請求項1乃至7のいずれか一項において、前記負荷は整流特性を有する表示素子であることを特徴とする半導体装置。
- 請求項1乃至7のいずれか一項において、前記負荷はEL素子であることを特徴とする半導体装置。
- 請求項1乃至9のいずれか一項に記載の半導体装置を具備することを特徴とする表示装置。
- 請求項10に記載の表示装置を具備することを特徴とする電子機器。
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JP2012133381A (ja) * | 2005-08-12 | 2012-07-12 | Semiconductor Energy Lab Co Ltd | 半導体装置、表示装置、表示モジュール、及び電子機器 |
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KR20150041309A (ko) * | 2013-10-08 | 2015-04-16 | 삼성디스플레이 주식회사 | 평판 표시장치 및 그의 구동방법 |
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JP2012133381A (ja) | 2012-07-12 |
KR20070019625A (ko) | 2007-02-15 |
TW201112207A (en) | 2011-04-01 |
TWI424408B (zh) | 2014-01-21 |
US20110090189A1 (en) | 2011-04-21 |
KR101378805B1 (ko) | 2014-03-27 |
CN102148008A (zh) | 2011-08-10 |
KR101228971B1 (ko) | 2013-02-01 |
KR20110014541A (ko) | 2011-02-11 |
KR20120137469A (ko) | 2012-12-21 |
US20070035340A1 (en) | 2007-02-15 |
JP2016145986A (ja) | 2016-08-12 |
US7859488B2 (en) | 2010-12-28 |
JP5933648B2 (ja) | 2016-06-15 |
JP2013140407A (ja) | 2013-07-18 |
JP5695813B2 (ja) | 2015-04-08 |
TWI485681B (zh) | 2015-05-21 |
TW200721097A (en) | 2007-06-01 |
JP2015014795A (ja) | 2015-01-22 |
CN102148008B (zh) | 2014-08-13 |
CN1912980A (zh) | 2007-02-14 |
US8570456B2 (en) | 2013-10-29 |
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