JP2006520530A5 - - Google Patents

Download PDF

Info

Publication number
JP2006520530A5
JP2006520530A5 JP2006503246A JP2006503246A JP2006520530A5 JP 2006520530 A5 JP2006520530 A5 JP 2006520530A5 JP 2006503246 A JP2006503246 A JP 2006503246A JP 2006503246 A JP2006503246 A JP 2006503246A JP 2006520530 A5 JP2006520530 A5 JP 2006520530A5
Authority
JP
Japan
Prior art keywords
polishing
acid
dielectric layer
group
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006503246A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006520530A (ja
JP4927526B2 (ja
Filing date
Publication date
Priority claimed from US10/356,970 external-priority patent/US7071105B2/en
Application filed filed Critical
Publication of JP2006520530A publication Critical patent/JP2006520530A/ja
Publication of JP2006520530A5 publication Critical patent/JP2006520530A5/ja
Application granted granted Critical
Publication of JP4927526B2 publication Critical patent/JP4927526B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2006503246A 2003-02-03 2004-02-02 二酸化ケイ素層及び窒化ケイ素層を有する基材の研磨方法、及び化学機械的研磨系 Expired - Lifetime JP4927526B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/356,970 2003-02-03
US10/356,970 US7071105B2 (en) 2003-02-03 2003-02-03 Method of polishing a silicon-containing dielectric
PCT/US2004/002908 WO2004069947A1 (en) 2003-02-03 2004-02-02 Method of polishing a silicon-containing dielectric

Publications (3)

Publication Number Publication Date
JP2006520530A JP2006520530A (ja) 2006-09-07
JP2006520530A5 true JP2006520530A5 (cg-RX-API-DMAC7.html) 2007-03-29
JP4927526B2 JP4927526B2 (ja) 2012-05-09

Family

ID=32770920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006503246A Expired - Lifetime JP4927526B2 (ja) 2003-02-03 2004-02-02 二酸化ケイ素層及び窒化ケイ素層を有する基材の研磨方法、及び化学機械的研磨系

Country Status (7)

Country Link
US (4) US7071105B2 (cg-RX-API-DMAC7.html)
EP (1) EP1601735B1 (cg-RX-API-DMAC7.html)
JP (1) JP4927526B2 (cg-RX-API-DMAC7.html)
KR (2) KR101281967B1 (cg-RX-API-DMAC7.html)
CN (1) CN1742066B (cg-RX-API-DMAC7.html)
TW (1) TWI283022B (cg-RX-API-DMAC7.html)
WO (1) WO2004069947A1 (cg-RX-API-DMAC7.html)

Families Citing this family (186)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7316603B2 (en) 2002-01-22 2008-01-08 Cabot Microelectronics Corporation Compositions and methods for tantalum CMP
US7097541B2 (en) * 2002-01-22 2006-08-29 Cabot Microelectronics Corporation CMP method for noble metals
JP2004101849A (ja) * 2002-09-09 2004-04-02 Mitsubishi Gas Chem Co Inc 洗浄剤組成物
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US20050028450A1 (en) * 2003-08-07 2005-02-10 Wen-Qing Xu CMP slurry
US7514363B2 (en) * 2003-10-23 2009-04-07 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use
US20050189322A1 (en) * 2004-02-27 2005-09-01 Lane Sarah J. Compositions and methods for chemical mechanical polishing silica and silicon nitride
TW200613485A (en) * 2004-03-22 2006-05-01 Kao Corp Polishing composition
US20060021972A1 (en) * 2004-07-28 2006-02-02 Lane Sarah J Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
JP4814502B2 (ja) * 2004-09-09 2011-11-16 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP5026665B2 (ja) * 2004-10-15 2012-09-12 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
US20060097219A1 (en) * 2004-11-08 2006-05-11 Applied Materials, Inc. High selectivity slurry compositions for chemical mechanical polishing
JP4027929B2 (ja) * 2004-11-30 2007-12-26 花王株式会社 半導体基板用研磨液組成物
US7208325B2 (en) * 2005-01-18 2007-04-24 Applied Materials, Inc. Refreshing wafers having low-k dielectric materials
US7449124B2 (en) * 2005-02-25 2008-11-11 3M Innovative Properties Company Method of polishing a wafer
US7081041B1 (en) 2005-02-28 2006-07-25 Hitachi Global Storage Technologies Netherlands B.V. Manufacturing method for forming a write head top pole using chemical mechanical polishing with a DLC stop layer
US20060205218A1 (en) * 2005-03-09 2006-09-14 Mueller Brian L Compositions and methods for chemical mechanical polishing thin films and dielectric materials
US7497938B2 (en) * 2005-03-22 2009-03-03 Cabot Microelectronics Corporation Tribo-chronoamperometry as a tool for CMP application
JP2006269910A (ja) * 2005-03-25 2006-10-05 Fuji Photo Film Co Ltd 金属用研磨液及びこれを用いた研磨方法
JP2006318952A (ja) * 2005-05-10 2006-11-24 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
US7731864B2 (en) * 2005-06-29 2010-06-08 Intel Corporation Slurry for chemical mechanical polishing of aluminum
US7708904B2 (en) * 2005-09-09 2010-05-04 Saint-Gobain Ceramics & Plastics, Inc. Conductive hydrocarbon fluid
US8353740B2 (en) 2005-09-09 2013-01-15 Saint-Gobain Ceramics & Plastics, Inc. Conductive hydrocarbon fluid
US7803203B2 (en) 2005-09-26 2010-09-28 Cabot Microelectronics Corporation Compositions and methods for CMP of semiconductor materials
US7842193B2 (en) * 2005-09-29 2010-11-30 Fujifilm Corporation Polishing liquid
US20070077865A1 (en) * 2005-10-04 2007-04-05 Cabot Microelectronics Corporation Method for controlling polysilicon removal
US20090301996A1 (en) * 2005-11-08 2009-12-10 Advanced Technology Materials, Inc. Formulations for removing cooper-containing post-etch residue from microelectronic devices
US20070129682A1 (en) * 2005-12-02 2007-06-07 Tracee Eidenschink Guidewire with perfusion capability
US20070209287A1 (en) * 2006-03-13 2007-09-13 Cabot Microelectronics Corporation Composition and method to polish silicon nitride
US7732393B2 (en) * 2006-03-20 2010-06-08 Cabot Microelectronics Corporation Oxidation-stabilized CMP compositions and methods
KR100800481B1 (ko) * 2006-08-16 2008-02-04 삼성전자주식회사 화학기계적 연마방법 및 이를 이용한 소자 분리막 형성방법
US20080182413A1 (en) * 2006-08-16 2008-07-31 Menk Gregory E Selective chemistry for fixed abrasive cmp
US7776230B2 (en) * 2006-08-30 2010-08-17 Cabot Microelectronics Corporation CMP system utilizing halogen adduct
US7723234B2 (en) 2006-11-22 2010-05-25 Clarkson University Method for selective CMP of polysilicon
US20080116171A1 (en) * 2006-11-22 2008-05-22 Clarkson University Method For The Preferential Polishing Of Silicon Nitride Versus Silicon Oxide
US7629258B2 (en) 2006-11-22 2009-12-08 Clarkson University Method for one-to-one polishing of silicon nitride and silicon oxide
KR100725803B1 (ko) * 2006-12-05 2007-06-08 제일모직주식회사 실리콘 웨이퍼 최종 연마용 슬러리 조성물　및 이를 이용한실리콘 웨이퍼 최종 연마 방법
US9343330B2 (en) * 2006-12-06 2016-05-17 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
US8591764B2 (en) * 2006-12-20 2013-11-26 3M Innovative Properties Company Chemical mechanical planarization composition, system, and method of use
DE102006061891A1 (de) * 2006-12-28 2008-07-03 Basf Se Zusammensetzung zum Polieren von Oberflächen aus Siliziumdioxid
US20100087065A1 (en) * 2007-01-31 2010-04-08 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
KR100807220B1 (ko) * 2007-02-01 2008-02-28 삼성전자주식회사 불휘발성 메모리 장치의 제조 방법
DE102007035992A1 (de) * 2007-05-25 2008-11-27 Evonik Degussa Gmbh Ceroxid, Siliciumdioxid oder Schichtsilikat und Aminosäure enthaltende Dispersion
US20080314872A1 (en) * 2007-06-19 2008-12-25 Ferro Corporation Chemical-Mechanical Polishing Compositions Containing Aspartame And Methods Of Making And Using The Same
TW200916571A (en) * 2007-08-02 2009-04-16 Advanced Tech Materials Non-fluoride containing composition for the removal of residue from a microelectronic device
US20090031636A1 (en) * 2007-08-03 2009-02-05 Qianqiu Ye Polymeric barrier removal polishing slurry
WO2009042073A2 (en) * 2007-09-21 2009-04-02 Cabot Microelectronics Corporation Polishing composition and method utilizing abrasive particles treated with an aminosilane
JP2009123880A (ja) 2007-11-14 2009-06-04 Showa Denko Kk 研磨組成物
US7955520B2 (en) * 2007-11-27 2011-06-07 Cabot Microelectronics Corporation Copper-passivating CMP compositions and methods
JP5306644B2 (ja) * 2007-12-29 2013-10-02 Ｈｏｙａ株式会社 マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、及び反射型マスクブランクの製造方法、並びに反射型マスクの製造方法
US7922926B2 (en) * 2008-01-08 2011-04-12 Cabot Microelectronics Corporation Composition and method for polishing nickel-phosphorous-coated aluminum hard disks
CN101492592B (zh) * 2008-01-25 2014-01-29 安集微电子（上海）有限公司 一种化学机械抛光液
JPWO2009096495A1 (ja) * 2008-02-01 2011-05-26 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP5326492B2 (ja) * 2008-02-12 2013-10-30 日立化成株式会社 Ｃｍｐ用研磨液、基板の研磨方法及び電子部品
JP5375025B2 (ja) * 2008-02-27 2013-12-25 日立化成株式会社 研磨液
DE102008002321A1 (de) 2008-06-10 2009-12-17 Evonik Degussa Gmbh Ceroxid und partikuläres Additiv enthaltende Dispersion
JP5369506B2 (ja) * 2008-06-11 2013-12-18 信越化学工業株式会社 合成石英ガラス基板用研磨剤
WO2009150938A1 (ja) * 2008-06-11 2009-12-17 信越化学工業株式会社 合成石英ガラス基板用研磨剤
WO2009154164A1 (ja) * 2008-06-18 2009-12-23 株式会社 フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
US8247327B2 (en) * 2008-07-30 2012-08-21 Cabot Microelectronics Corporation Methods and compositions for polishing silicon-containing substrates
KR101686255B1 (ko) * 2008-10-03 2016-12-13 바스프 에스이 향상된 성능의 화학적 기계적 연마(ｃｍｐ) 연마 용액
CN103342986B (zh) 2008-12-11 2015-01-07 日立化成株式会社 Cmp用研磨液以及使用该研磨液的研磨方法
CN101475791B (zh) * 2009-01-20 2012-08-29 江苏工业学院 氧化铈/氧化硅复合磨料的制备方法和用途
EP2438133B1 (en) * 2009-06-05 2018-07-11 Basf Se Polishing slurry containing raspberry-type metal oxide nanostructures coated with CeO2
CN101906270A (zh) * 2009-06-08 2010-12-08 安集微电子科技(上海)有限公司 一种化学机械抛光液
CN101906359A (zh) * 2009-06-08 2010-12-08 安集微电子科技(上海)有限公司 一种化学机械抛光清洗液
SG177327A1 (en) * 2009-06-22 2012-02-28 Cabot Microelectronics Corp Cmp compositions and methods for suppressing polysilicon removal rates
SG10201407348PA (en) * 2009-11-13 2015-01-29 Basf Se A chemical mechanical polishing (cmp) composition comprising inorganic particles and polymer particles
JP2011110637A (ja) * 2009-11-25 2011-06-09 Asahi Glass Co Ltd 磁気ディスク用ガラス基板の製造方法
KR101675378B1 (ko) * 2010-02-25 2016-11-23 삼성전자주식회사 연마 슬러리 및 그를 이용한 절연막 평탄화 방법
JP5648567B2 (ja) * 2010-05-07 2015-01-07 日立化成株式会社 Ｃｍｐ用研磨液及びこれを用いた研磨方法
JP5141792B2 (ja) 2010-06-29 2013-02-13 日立化成工業株式会社 Ｃｍｐ研磨液及び研磨方法
US20130168348A1 (en) 2010-09-08 2013-07-04 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
TWI598434B (zh) 2010-09-08 2017-09-11 巴斯夫歐洲公司 含有Ｎ－取代重氮烯（ｄｉａｚｅｎｉｕｍ）二氧化鹽及／或Ｎ’－羥基－重氮烯（ｄｉａｚｅｎｉｕｍ）氧化鹽之水研磨組成物
WO2012032469A1 (en) 2010-09-08 2012-03-15 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices
JP2012069785A (ja) * 2010-09-24 2012-04-05 Fujimi Inc 研磨用組成物および研磨方法
US8497210B2 (en) 2010-10-04 2013-07-30 International Business Machines Corporation Shallow trench isolation chemical mechanical planarization
WO2012077693A1 (ja) * 2010-12-06 2012-06-14 株式会社Moresco ガラス基板研磨用組成物及び研磨スラリー
CN108276915A (zh) 2010-12-10 2018-07-13 巴斯夫欧洲公司 用于化学机械抛光包含氧化硅电介质和多晶硅膜的基底的含水抛光组合物和方法
KR102077618B1 (ko) * 2011-01-11 2020-02-14 캐보트 마이크로일렉트로닉스 코포레이션 금속-패시베이션화 ｃｍｐ 조성물 및 방법
US8986524B2 (en) 2011-01-28 2015-03-24 International Business Machines Corporation DNA sequence using multiple metal layer structure with different organic coatings forming different transient bondings to DNA
CN102268225B (zh) * 2011-05-30 2014-03-26 上海百兰朵电子科技有限公司 永悬浮钻石研磨液
CN103764775B (zh) * 2011-09-07 2016-05-18 巴斯夫欧洲公司 包含苷的化学机械抛光(cmp)组合物
EP2568024A1 (en) 2011-09-07 2013-03-13 Basf Se A chemical mechanical polishing (cmp) composition comprising a glycoside
KR101411019B1 (ko) * 2011-12-29 2014-06-24 제일모직주식회사 Ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
KR101385044B1 (ko) * 2011-12-30 2014-04-15 제일모직주식회사 Ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
TWI573864B (zh) * 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物
US10029915B2 (en) * 2012-04-04 2018-07-24 International Business Machines Corporation Functionally switchable self-assembled coating compound for controlling translocation of molecule through nanopores
US8778212B2 (en) * 2012-05-22 2014-07-15 Cabot Microelectronics Corporation CMP composition containing zirconia particles and method of use
US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
JP6088505B2 (ja) * 2012-05-30 2017-03-01 株式会社クラレ 化学機械研磨用スラリーおよび化学機械研磨方法
EP2682440A1 (en) * 2012-07-06 2014-01-08 Basf Se A chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and a carbonate salt
US9633863B2 (en) 2012-07-11 2017-04-25 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
US8859428B2 (en) 2012-10-19 2014-10-14 Air Products And Chemicals, Inc. Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof
KR102198376B1 (ko) * 2012-11-02 2021-01-04 로렌스 리버모어 내쇼날 시큐리티, 엘엘시 표면 활성의 손실없이 대전된 콜로이드의 응집을 방지하는 방법
US9434859B2 (en) * 2013-09-24 2016-09-06 Cabot Microelectronics Corporation Chemical-mechanical planarization of polymer films
US9281210B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
US9340706B2 (en) 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
US9279067B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
JP6191433B2 (ja) * 2013-12-11 2017-09-06 旭硝子株式会社 研磨剤および研磨方法
US9238754B2 (en) * 2014-03-11 2016-01-19 Cabot Microelectronics Corporation Composition for tungsten CMP
CN104073170B (zh) * 2014-06-24 2015-11-18 江苏天恒纳米科技股份有限公司 一种铝合金表面超精密加工专用纳米浆料及其制备方法
KR102458508B1 (ko) * 2014-06-25 2022-10-26 씨엠씨 머티리얼즈, 인코포레이티드 콜로이드성 실리카 화학적-기계적 연마 농축액
JP6435689B2 (ja) * 2014-07-25 2018-12-12 Ａｇｃ株式会社 研磨剤と研磨方法、および研磨用添加液
US9530655B2 (en) * 2014-09-08 2016-12-27 Taiwan Semiconductor Manufacting Company, Ltd. Slurry composition for chemical mechanical polishing of Ge-based materials and devices
CN104263320B (zh) * 2014-09-10 2016-03-02 句容金猴机械研究所有限公司 一种机械设备耐高温研磨剂及其制备方法
JP5893700B1 (ja) 2014-09-26 2016-03-23 花王株式会社 酸化珪素膜用研磨液組成物
JP6694674B2 (ja) * 2014-11-07 2020-05-20 株式会社フジミインコーポレーテッド 研磨方法およびポリシング用組成物
CN104650740B (zh) * 2014-12-10 2017-07-14 深圳市力合材料有限公司 一种可实现快速稳定抛光的抛光液
WO2016115096A1 (en) * 2015-01-12 2016-07-21 Air Products And Chemicals, Inc. Composite abrasive particles for chemical mechanical planarization composition and method of use thereof
US9803107B2 (en) 2015-02-12 2017-10-31 Asahi Glass Company, Limited Polishing agent, polishing method and method for manufacturing semiconductor integrated circuit device
WO2016132952A1 (ja) * 2015-02-20 2016-08-25 株式会社フジミインコーポレーテッド 研磨用組成物
US9505952B2 (en) 2015-03-05 2016-11-29 Cabot Microelectronics Corporation Polishing composition containing ceria abrasive
US9758697B2 (en) 2015-03-05 2017-09-12 Cabot Microelectronics Corporation Polishing composition containing cationic polymer additive
US10414947B2 (en) 2015-03-05 2019-09-17 Cabot Microelectronics Corporation Polishing composition containing ceria particles and method of use
US10032644B2 (en) * 2015-06-05 2018-07-24 Versum Materials Us, Llc Barrier chemical mechanical planarization slurries using ceria-coated silica abrasives
US10619075B2 (en) * 2015-07-13 2020-04-14 Cabot Microelectronics Corporation Self-stopping polishing composition and method for bulk oxide planarization
CN107851568B (zh) * 2015-07-13 2021-10-08 Cmc材料股份有限公司 用于加工介电基板的方法及组合物
CN108026412B (zh) * 2015-09-03 2021-08-31 嘉柏微电子材料股份公司 用于加工介电基板的方法及组合物
US10144850B2 (en) * 2015-09-25 2018-12-04 Versum Materials Us, Llc Stop-on silicon containing layer additive
KR102543680B1 (ko) 2015-12-17 2023-06-16 솔브레인 주식회사 화학기계적 연마 슬러리 조성물
JP6657935B2 (ja) * 2015-12-25 2020-03-04 日立化成株式会社 研磨液
US9796882B2 (en) * 2015-12-29 2017-10-24 Cabot Microelectronics Corporation CMP processing composition comprising alkylamine and cyclodextrin
WO2018038885A1 (en) * 2016-08-26 2018-03-01 Ferro Corporation Slurry composition and method of selective silica polishing
WO2018075409A2 (en) 2016-10-17 2018-04-26 Cabot Microelectronics Corporation Cmp compositions selective for oxide and nitride with improved dishing and pattern selectivity
US10570315B2 (en) * 2016-11-08 2020-02-25 Fujimi Incorporated Buffered slurry formulation for cobalt CMP
CN108117840B (zh) * 2016-11-29 2021-09-21 安集微电子科技（上海）股份有限公司 一种氮化硅化学机械抛光液
CN108117839B (zh) 2016-11-29 2021-09-17 安集微电子科技（上海）股份有限公司 一种具有高氮化硅选择性的化学机械抛光液
KR102677797B1 (ko) * 2016-12-22 2024-06-24 주식회사 케이씨텍 Sti 공정용 연마 슬러리 조성물
US9984895B1 (en) 2017-01-31 2018-05-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
US10286518B2 (en) 2017-01-31 2019-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
US20180244955A1 (en) * 2017-02-28 2018-08-30 Versum Materials Us, Llc Chemical Mechanical Planarization of Films Comprising Elemental Silicon
US10319601B2 (en) * 2017-03-23 2019-06-11 Applied Materials, Inc. Slurry for polishing of integrated circuit packaging
WO2018179064A1 (ja) 2017-03-27 2018-10-04 日立化成株式会社 スラリ及び研磨方法
WO2018179061A1 (ja) * 2017-03-27 2018-10-04 日立化成株式会社 研磨液、研磨液セット及び研磨方法
US10106705B1 (en) * 2017-03-29 2018-10-23 Fujifilm Planar Solutions, LLC Polishing compositions and methods of use thereof
WO2018194792A1 (en) * 2017-04-17 2018-10-25 Cabot Microelectronics Corporation Self-stopping polishing composition and method for bulk oxide planarization
CN109251677B (zh) * 2017-07-13 2021-08-13 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251680A (zh) * 2017-07-13 2019-01-22 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
US10428241B2 (en) * 2017-10-05 2019-10-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions containing charged abrasive
KR102533083B1 (ko) * 2017-12-18 2023-05-17 주식회사 케이씨텍 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물
KR20190074597A (ko) 2017-12-20 2019-06-28 주식회사 케이씨텍 Sti 공정용 연마 슬러리 조성물
US10584266B2 (en) 2018-03-14 2020-03-10 Cabot Microelectronics Corporation CMP compositions containing polymer complexes and agents for STI applications
KR102576637B1 (ko) 2018-03-22 2023-09-07 가부시끼가이샤 레조낙 연마액, 연마액 세트 및 연마 방법
WO2020021680A1 (ja) 2018-07-26 2020-01-30 日立化成株式会社 スラリ及び研磨方法
US11643599B2 (en) * 2018-07-20 2023-05-09 Versum Materials Us, Llc Tungsten chemical mechanical polishing for reduced oxide erosion
US11718767B2 (en) * 2018-08-09 2023-08-08 Versum Materials Us, Llc Chemical mechanical planarization composition for polishing oxide materials and method of use thereof
WO2020065723A1 (ja) 2018-09-25 2020-04-02 日立化成株式会社 スラリ及び研磨方法
US20200102475A1 (en) * 2018-09-28 2020-04-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mecahnical polishing composition and method of polishing silcon dioxide over silicon nitiride
US11180678B2 (en) * 2018-10-31 2021-11-23 Versum Materials Us, Llc Suppressing SiN removal rates and reducing oxide trench dishing for Shallow Trench Isolation (STI) process
US20200172759A1 (en) * 2018-12-04 2020-06-04 Cabot Microelectronics Corporation Composition and method for cobalt cmp
US10988635B2 (en) * 2018-12-04 2021-04-27 Cmc Materials, Inc. Composition and method for copper barrier CMP
US10763119B2 (en) * 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
US10759970B2 (en) * 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
KR102709495B1 (ko) * 2018-12-31 2024-09-25 주식회사 동진쎄미켐 화학-기계적 연마 입자 및 이를 포함하는 연마 슬러리 조성물
US11608451B2 (en) 2019-01-30 2023-03-21 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with tunable silicon oxide and silicon nitride removal rates
US20200270479A1 (en) * 2019-02-26 2020-08-27 Versum Materials Us, Llc Shallow Trench Isolation Chemical And Mechanical Polishing Slurry
CN113767155A (zh) * 2019-04-29 2021-12-07 弗萨姆材料美国有限责任公司 选择性化学机械平面化抛光
CN113632205B (zh) * 2019-06-06 2024-12-20 株式会社力森诺科 研磨液及研磨方法
KR102814738B1 (ko) * 2019-08-06 2025-05-30 삼성디스플레이 주식회사 연마 슬러리, 이를 이용한 표시 장치의 제조방법 및 표시 장치
EP4048750A4 (en) * 2019-10-22 2024-01-03 CMC Materials, Inc. COMPOSITION AND METHOD FOR CMP OF SILICON OXIDE AND CARBON-DOPED SILICON OXIDE
CN113004798B (zh) * 2019-12-19 2024-04-12 安集微电子（上海）有限公司 一种化学机械抛光液
JP7409899B2 (ja) * 2020-02-18 2024-01-09 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法、および半導体基板の製造方法
JP7409918B2 (ja) * 2020-03-13 2024-01-09 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法
JP7487507B2 (ja) * 2020-03-23 2024-05-21 株式会社レゾナック 研磨剤及び研磨方法
US11680186B2 (en) 2020-11-06 2023-06-20 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
CN114621683A (zh) * 2020-12-11 2022-06-14 安集微电子（上海）有限公司 一种化学机械抛光液及其使用方法
KR20220120864A (ko) * 2021-02-24 2022-08-31 에스케이하이닉스 주식회사 실리콘 산화막 연마용 cmp 슬러리 조성물
KR20240031958A (ko) * 2021-05-13 2024-03-08 아라카 인코포레이션 슬러리 제형 및 공정을 사용한 탄화규소(sic) 웨이퍼 연마
KR20230011121A (ko) * 2021-07-13 2023-01-20 주식회사 케이씨텍 신규한 세륨계 입자 및 이를 포함하는 연마 슬러리 조성물
WO2023013059A1 (ja) * 2021-08-06 2023-02-09 昭和電工マテリアルズ株式会社 Ｃｍｐ用研磨液、ｃｍｐ用研磨液セット及び研磨方法
KR102677801B1 (ko) * 2021-10-14 2024-06-25 주식회사 케이씨텍 연마 슬러리 조성물
KR20230063182A (ko) * 2021-11-01 2023-05-09 주식회사 케이씨텍 연마용 슬러리 조성물
US20250101261A1 (en) * 2022-02-07 2025-03-27 Araca, Inc. Chemical mechanical planarization slurry processing techniques and systems and methods for polishing substrate using the same
KR20230144386A (ko) 2022-04-07 2023-10-16 삼성전자주식회사 반도체 소자 및 그 제조방법
CN115160933B (zh) * 2022-07-27 2023-11-28 河北工业大学 一种用于钴互连集成电路钴cmp的碱性抛光液及其制备方法
CN115746711B (zh) * 2022-11-08 2023-07-14 东莞领航电子新材料有限公司 一种铝合金镜面抛光液以及抛光方法
CN115710464A (zh) * 2022-11-11 2023-02-24 博力思(天津)电子科技有限公司 一种低表面粗糙度的氧化硅介质层化学机械抛光液
CN117229716A (zh) * 2023-08-23 2023-12-15 上海集成电路材料研究院有限公司 一种含吗啉环水溶性小分子的用途及化学机械抛光液
CN117229717A (zh) * 2023-08-23 2023-12-15 上海集成电路材料研究院有限公司 一种化学机械抛光液及其制备方法和用途
KR20250051317A (ko) * 2023-10-10 2025-04-17 주식회사 케이씨텍 표면 개질된 나노 세리아 입자를 포함하는 cmp 슬러리 조성물
CN117683468A (zh) * 2023-11-16 2024-03-12 江苏山水半导体科技有限公司 一种用于sti结构的化学机械抛光液及其制备方法和应用
WO2025141810A1 (ja) * 2023-12-27 2025-07-03 株式会社レゾナック 研磨液及び研磨方法
US20250297135A1 (en) * 2024-03-25 2025-09-25 Entegris, Inc. Ceria and hydroxamic acid cmp composition
CN119039991B (zh) * 2024-10-30 2025-06-03 西安蓝桥新能源科技有限公司 一种用于硅片碱刻蚀抛光的添加剂、反应液及方法与应用
CN119432234A (zh) * 2024-10-31 2025-02-14 西北工业大学宁波研究院 一种用于sti技术的氧化铈抛光液及抛光条件

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4169337A (en) * 1978-03-30 1979-10-02 Nalco Chemical Company Process for polishing semi-conductor materials
US4462188A (en) 1982-06-21 1984-07-31 Nalco Chemical Company Silica sol compositions for polishing silicon wafers
US4867757A (en) 1988-09-09 1989-09-19 Nalco Chemical Company Lapping slurry compositions with improved lap rate
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5460701A (en) 1993-07-27 1995-10-24 Nanophase Technologies Corporation Method of making nanostructured materials
US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
US5527423A (en) 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5860848A (en) * 1995-06-01 1999-01-19 Rodel, Inc. Polishing silicon wafers with improved polishing slurries
US5614444A (en) * 1995-06-06 1997-03-25 Sematech, Inc. Method of using additives with silica-based slurries to enhance selectivity in metal CMP
US5763325A (en) * 1995-07-04 1998-06-09 Fujitsu Limited Fabrication process of a semiconductor device using a slurry containing manganese oxide
US5958794A (en) 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
EP0786504A3 (en) * 1996-01-29 1998-05-20 Fujimi Incorporated Polishing composition
US5733176A (en) * 1996-05-24 1998-03-31 Micron Technology, Inc. Polishing pad and method of use
WO1998004646A1 (en) * 1996-07-25 1998-02-05 Ekc Technology, Inc. Chemical mechanical polishing composition and process
US5738800A (en) 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride
US6132637A (en) 1996-09-27 2000-10-17 Rodel Holdings, Inc. Composition and method for polishing a composite of silica and silicon nitride
US5968239A (en) * 1996-11-12 1999-10-19 Kabushiki Kaisha Toshiba Polishing slurry
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
EP0853110B1 (en) 1997-01-10 2005-06-29 Texas Instruments Incorporated CMP slurry with high selectivity
US6062968A (en) 1997-04-18 2000-05-16 Cabot Corporation Polishing pad for a semiconductor substrate
US6126532A (en) 1997-04-18 2000-10-03 Cabot Corporation Polishing pads for a semiconductor substrate
US6322600B1 (en) * 1997-04-23 2001-11-27 Advanced Technology Materials, Inc. Planarization compositions and methods for removing interlayer dielectric films
US6194317B1 (en) * 1998-04-30 2001-02-27 3M Innovative Properties Company Method of planarizing the upper surface of a semiconductor wafer
JPH10321570A (ja) * 1997-05-15 1998-12-04 Tokuyama Corp 半導体ウェーハポリッシング用研磨剤及びその製造方法、ポリッシング方法
US6168823B1 (en) * 1997-10-09 2001-01-02 Wisconsin Alumni Research Foundation Production of substantially pure kappa casein macropeptide
ES2216490T3 (es) 1998-02-24 2004-10-16 Showa Denko Kabushiki Kaisha Composicion abrasiva para pulir un dispositivo semiconductor y procedimiento para producir un dispositivo semiconductor con la misma.
US6359471B1 (en) 1998-03-09 2002-03-19 Infineon Technologies North America Corp. Mixed swing voltage repeaters for high resistance or high capacitance signal lines and methods therefor
US6114249A (en) * 1998-03-10 2000-09-05 International Business Machines Corporation Chemical mechanical polishing of multiple material substrates and slurry having improved selectivity
US6117000A (en) 1998-07-10 2000-09-12 Cabot Corporation Polishing pad for a semiconductor substrate
US6299659B1 (en) * 1998-08-05 2001-10-09 Showa Denko K.K. Polishing material composition and polishing method for polishing LSI devices
US6863593B1 (en) 1998-11-02 2005-03-08 Applied Materials, Inc. Chemical mechanical polishing a substrate having a filler layer and a stop layer
SG78405A1 (en) * 1998-11-17 2001-02-20 Fujimi Inc Polishing composition and rinsing composition
DE60015411T2 (de) 1999-03-18 2005-10-27 Kabushiki Kaisha Toshiba, Kawasaki Wässerige Dispersionsaufschlämmung für chemisch-mechanisches Polierverfahren
JP2001007059A (ja) * 1999-06-18 2001-01-12 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
JP3957924B2 (ja) * 1999-06-28 2007-08-15 株式会社東芝 Ｃｍｐ研磨方法
US6488730B2 (en) * 1999-07-01 2002-12-03 Cheil Industries, Inc. Polishing composition
TWI227726B (en) * 1999-07-08 2005-02-11 Eternal Chemical Co Ltd Chemical-mechanical abrasive composition and method
JP4555936B2 (ja) 1999-07-21 2010-10-06 日立化成工業株式会社 Ｃｍｐ研磨液
US6855266B1 (en) * 1999-08-13 2005-02-15 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
TW499471B (en) * 1999-09-01 2002-08-21 Eternal Chemical Co Ltd Chemical mechanical/abrasive composition for semiconductor processing
US6350393B2 (en) 1999-11-04 2002-02-26 Cabot Microelectronics Corporation Use of CsOH in a dielectric CMP slurry
US6468910B1 (en) * 1999-12-08 2002-10-22 Ramanathan Srinivasan Slurry for chemical mechanical polishing silicon dioxide
US6491843B1 (en) * 1999-12-08 2002-12-10 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
JP2001269859A (ja) 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
CN1422314A (zh) 2000-04-11 2003-06-04 卡伯特微电子公司 用于优先除去氧化硅的系统
US6593240B1 (en) 2000-06-28 2003-07-15 Infineon Technologies, North America Corp Two step chemical mechanical polishing process
CN1746255B (zh) 2001-02-20 2010-11-10 日立化成工业株式会社 抛光剂及基片的抛光方法
JP2002241739A (ja) 2001-02-20 2002-08-28 Hitachi Chem Co Ltd 研磨剤及び基板の研磨方法
JP2003017445A (ja) 2001-06-28 2003-01-17 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
JP4972829B2 (ja) 2001-06-28 2012-07-11 日立化成工業株式会社 Ｃｍｐ研磨剤及び基板の研磨方法
JP2003017447A (ja) 2001-06-28 2003-01-17 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
US6776810B1 (en) 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric

Similar Documents

Publication Publication Date Title
JP2006520530A5 (cg-RX-API-DMAC7.html)
CN1742066B (zh) 抛光含硅电介质的方法
TWI398917B (zh) 用於拋光含矽基板之方法及組合物
US20210348029A1 (en) Polishing compositions containing charged abrasive
CN103261358B (zh) 用于抛光多晶硅的组合物及方法
CN103080256B (zh) 用于化学机械抛光包含氧化硅电介质和多晶硅膜的衬底的含水抛光组合物和方法
TWI801810B (zh) Cmp研磨液及研磨方法
JP4195212B2 (ja) 研磨液組成物
WO2015019911A1 (ja) Ｃｍｐ用研磨液
TW201912740A (zh) 用於淺溝槽隔離之水性矽石漿料組合物及其使用方法
JP6974394B2 (ja) 低酸化物トレンチディッシング化学機械研磨