JP2006515467A - 後続の化学機械研磨(CMP:ChemicalMechanicalPolishing)プロセスのプロセス均一性が向上するようにパターン誘電層上に銅を電気メッキするための方法 - Google Patents

後続の化学機械研磨(CMP:ChemicalMechanicalPolishing)プロセスのプロセス均一性が向上するようにパターン誘電層上に銅を電気メッキするための方法 Download PDF

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Publication number
JP2006515467A
JP2006515467A JP2004571478A JP2004571478A JP2006515467A JP 2006515467 A JP2006515467 A JP 2006515467A JP 2004571478 A JP2004571478 A JP 2004571478A JP 2004571478 A JP2004571478 A JP 2004571478A JP 2006515467 A JP2006515467 A JP 2006515467A
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Japan
Prior art keywords
substrate
metal layer
region
surface roughness
patterned
Prior art date
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Ceased
Application number
JP2004571478A
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English (en)
Japanese (ja)
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JP2006515467A5 (cg-RX-API-DMAC7.html
Inventor
フランツ マルクスゼン ゲルト
プロイセ アクセル
ノッパー マーカス
マオルズベルガー フランク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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Filing date
Publication date
Priority claimed from DE10319135A external-priority patent/DE10319135B4/de
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of JP2006515467A publication Critical patent/JP2006515467A/ja
Publication of JP2006515467A5 publication Critical patent/JP2006515467A5/ja
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47Electrolytic deposition, i.e. electroplating; Electroless plating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
JP2004571478A 2003-04-28 2003-12-22 後続の化学機械研磨(CMP:ChemicalMechanicalPolishing)プロセスのプロセス均一性が向上するようにパターン誘電層上に銅を電気メッキするための方法 Ceased JP2006515467A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10319135A DE10319135B4 (de) 2003-04-28 2003-04-28 Verfahren zum Elektroplattieren von Kupfer über einer strukturierten dielektrischen Schicht, um die Prozess-Gleichförmigkeit eines nachfolgenden CMP-Prozesses zu verbessern
US10/666,195 US6958247B2 (en) 2003-04-28 2003-09-19 Method of electroplating copper over a patterned dielectric layer to enhance process uniformity of a subsequent CMP process
PCT/US2003/041181 WO2004097932A2 (en) 2003-04-28 2003-12-22 Method of electroplating copper over a patterned dielectric layer to enhance process uniformity of a subsequent cmp process

Publications (2)

Publication Number Publication Date
JP2006515467A true JP2006515467A (ja) 2006-05-25
JP2006515467A5 JP2006515467A5 (cg-RX-API-DMAC7.html) 2007-02-15

Family

ID=33419999

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004571478A Ceased JP2006515467A (ja) 2003-04-28 2003-12-22 後続の化学機械研磨(CMP:ChemicalMechanicalPolishing)プロセスのプロセス均一性が向上するようにパターン誘電層上に銅を電気メッキするための方法

Country Status (5)

Country Link
JP (1) JP2006515467A (cg-RX-API-DMAC7.html)
KR (1) KR101136139B1 (cg-RX-API-DMAC7.html)
AU (1) AU2003302261A1 (cg-RX-API-DMAC7.html)
GB (1) GB2418067B (cg-RX-API-DMAC7.html)
WO (1) WO2004097932A2 (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100761360B1 (ko) * 2006-03-29 2007-09-27 주식회사 하이닉스반도체 플래쉬 메모리 소자의 메탈 배선 제조 방법
JP5981455B2 (ja) * 2011-01-26 2016-08-31 エンソン インコーポレイテッド マイクロ電子工業におけるビアホール充填方法
US12146235B2 (en) 2022-03-03 2024-11-19 Applied Materials, Inc. Plating and deplating currents for material co-planarity in semiconductor plating processes
US12571119B2 (en) * 2022-03-22 2026-03-10 Applied Materials Inc. Methods and apparatus for altering lithographic patterns to adjust plating uniformity

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6179691B1 (en) * 1999-08-06 2001-01-30 Taiwan Semiconductor Manufacturing Company Method for endpoint detection for copper CMP
US6350364B1 (en) * 2000-02-18 2002-02-26 Taiwan Semiconductor Manufacturing Company Method for improvement of planarity of electroplated copper
JP2002105695A (ja) * 2000-09-27 2002-04-10 Ebara Corp めっき装置及びめっき方法
JP2002167693A (ja) * 2000-09-20 2002-06-11 Ebara Corp 基板の電解めっき方法および電解めっき装置
JP2003003291A (ja) * 2001-03-23 2003-01-08 Interuniv Micro Electronica Centrum Vzw 複数工程からなる金属析出方法
JP2003068689A (ja) * 2001-08-22 2003-03-07 Tokyo Seimitsu Co Ltd フィードバック式研磨装置及び研磨方法
JP2003168665A (ja) * 2001-11-30 2003-06-13 Sony Corp 研磨方法および電解研磨装置
JP2003277985A (ja) * 2002-03-20 2003-10-02 Fujitsu Ltd メッキ成膜方法及びメッキ成膜装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2891161B2 (ja) 1996-02-15 1999-05-17 日本電気株式会社 配線形成方法
KR20000043909A (ko) * 1998-12-29 2000-07-15 김영환 반도체 소자의 금속배선 형성 방법
KR20000056852A (ko) * 1999-02-26 2000-09-15 로버트 에이치. 씨. 챠오 집적회로 내의 금속 상호연결 구조의 제조 방법
US6746589B2 (en) * 2000-09-20 2004-06-08 Ebara Corporation Plating method and plating apparatus

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6179691B1 (en) * 1999-08-06 2001-01-30 Taiwan Semiconductor Manufacturing Company Method for endpoint detection for copper CMP
US6350364B1 (en) * 2000-02-18 2002-02-26 Taiwan Semiconductor Manufacturing Company Method for improvement of planarity of electroplated copper
JP2002167693A (ja) * 2000-09-20 2002-06-11 Ebara Corp 基板の電解めっき方法および電解めっき装置
JP2002105695A (ja) * 2000-09-27 2002-04-10 Ebara Corp めっき装置及びめっき方法
JP2003003291A (ja) * 2001-03-23 2003-01-08 Interuniv Micro Electronica Centrum Vzw 複数工程からなる金属析出方法
JP2003068689A (ja) * 2001-08-22 2003-03-07 Tokyo Seimitsu Co Ltd フィードバック式研磨装置及び研磨方法
JP2003168665A (ja) * 2001-11-30 2003-06-13 Sony Corp 研磨方法および電解研磨装置
JP2003277985A (ja) * 2002-03-20 2003-10-02 Fujitsu Ltd メッキ成膜方法及びメッキ成膜装置

Also Published As

Publication number Publication date
GB2418067B (en) 2007-02-14
WO2004097932A2 (en) 2004-11-11
WO2004097932A3 (en) 2004-12-16
KR20060008946A (ko) 2006-01-27
KR101136139B1 (ko) 2012-04-20
AU2003302261A1 (en) 2004-11-23
GB0521254D0 (en) 2005-11-30
GB2418067A (en) 2006-03-15

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