JP2006509710A5 - - Google Patents

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JP2006509710A5
JP2006509710A5 JP2004558483A JP2004558483A JP2006509710A5 JP 2006509710 A5 JP2006509710 A5 JP 2006509710A5 JP 2004558483 A JP2004558483 A JP 2004558483A JP 2004558483 A JP2004558483 A JP 2004558483A JP 2006509710 A5 JP2006509710 A5 JP 2006509710A5
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substrate
layer
nitride
optoelectronics
manufacturing
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JP2004558483A
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Japanese (ja)
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JP4860927B2 (ja
JP2006509710A (ja
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Priority claimed from PL357709A external-priority patent/PL225425B1/pl
Priority claimed from PL357707A external-priority patent/PL225424B1/pl
Priority claimed from PL02357708A external-priority patent/PL357708A1/xx
Priority claimed from PL357696A external-priority patent/PL225423B1/pl
Application filed filed Critical
Priority claimed from PCT/JP2003/015906 external-priority patent/WO2004053210A1/en
Publication of JP2006509710A publication Critical patent/JP2006509710A/ja
Publication of JP2006509710A5 publication Critical patent/JP2006509710A5/ja
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Publication of JP4860927B2 publication Critical patent/JP4860927B2/ja
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JP2004558483A 2002-12-11 2003-12-11 エピタキシ用基板及びその製造方法 Expired - Fee Related JP4860927B2 (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
PLP-357709 2002-12-11
PL357709A PL225425B1 (pl) 2002-12-11 2002-12-11 Sposób wytwarzania złożonego podłoża standaryzowanego warstwą epitaksjalną (podłoża typu template) z objętościowego monokrystalicznego azotku zawierającego gal
PL357707A PL225424B1 (pl) 2002-12-11 2002-12-11 Sposób wytwarzania podłoża typu template z objętościowego monokrystalicznego azotku zawierającego gal
PLP-357707 2002-12-11
PL02357708A PL357708A1 (en) 2002-12-11 2002-12-11 Method of fabrication of epitaxial layer standardized substrate (template type substrates) from voluminal mono-crystalline aluminium nitride and nitride containing gallium for epitaxy of layers with high aluminium content as well as devices requiring efficient heat abstraction
PLP-357696 2002-12-11
PLP-357708 2002-12-11
PL357696A PL225423B1 (pl) 2002-12-11 2002-12-11 Sposób wytwarzania podłoża standaryzowanego warstwą epitaksjalną ( podłoża typu template), z objętościowego monokrystalicznego azotku zawierającego gal
PCT/JP2003/015906 WO2004053210A1 (en) 2002-12-11 2003-12-11 A substrate for epitaxy and a method of preparing the same

Publications (3)

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JP2006509710A JP2006509710A (ja) 2006-03-23
JP2006509710A5 true JP2006509710A5 (cg-RX-API-DMAC7.html) 2007-02-01
JP4860927B2 JP4860927B2 (ja) 2012-01-25

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JP2004558483A Expired - Fee Related JP4860927B2 (ja) 2002-12-11 2003-12-11 エピタキシ用基板及びその製造方法
JP2004558482A Expired - Fee Related JP4558502B2 (ja) 2002-12-11 2003-12-11 テンプレート型基板の製造方法

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JP2004558482A Expired - Fee Related JP4558502B2 (ja) 2002-12-11 2003-12-11 テンプレート型基板の製造方法

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US (3) US7387677B2 (cg-RX-API-DMAC7.html)
EP (2) EP1581675B1 (cg-RX-API-DMAC7.html)
JP (2) JP4860927B2 (cg-RX-API-DMAC7.html)
KR (2) KR101060073B1 (cg-RX-API-DMAC7.html)
AT (2) ATE457372T1 (cg-RX-API-DMAC7.html)
AU (2) AU2003285769A1 (cg-RX-API-DMAC7.html)
DE (2) DE60329713D1 (cg-RX-API-DMAC7.html)
PL (2) PL224991B1 (cg-RX-API-DMAC7.html)
TW (2) TWI334229B (cg-RX-API-DMAC7.html)
WO (2) WO2004053210A1 (cg-RX-API-DMAC7.html)

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