JP2006505952A - 半導体ウェーハ用の高圧力に適合可能なリフト機構を含んでいる真空チャック - Google Patents
半導体ウェーハ用の高圧力に適合可能なリフト機構を含んでいる真空チャック Download PDFInfo
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- JP2006505952A JP2006505952A JP2004551690A JP2004551690A JP2006505952A JP 2006505952 A JP2006505952 A JP 2006505952A JP 2004551690 A JP2004551690 A JP 2004551690A JP 2004551690 A JP2004551690 A JP 2004551690A JP 2006505952 A JP2006505952 A JP 2006505952A
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- Prior art keywords
- platen
- lift pin
- wafer
- vacuum chuck
- vacuum
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25B—TOOLS OR BENCH DEVICES NOT OTHERWISE PROVIDED FOR, FOR FASTENING, CONNECTING, DISENGAGING OR HOLDING
- B25B11/00—Work holders not covered by any preceding group in the subclass, e.g. magnetic work holders, vacuum work holders
- B25B11/005—Vacuum work holders
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (22)
- 高圧加工処理中における半導体ウェーハを保持するための真空チャックであって、ウェーハプラテンと、第一〜第三リフトピンと、アクチュエータ機構とを具備する真空チャックにおいて:
a. 該ウェーハプラテンが、滑らかな表面と、第一〜第三リフトピン穴と、該滑ら かな表面に設置された真空開口部とを具備していて、該真空開口部は半導体ウ ェーハの表面を真空引きするべく使用可能であり;
b. 該第一〜第三リフトピンが、それぞれ該第一〜第三リフトピン穴に取り付けら れていて;
c. 該アクチュエータ機構が、該第一〜第三リフトピンを該ウェーハプラテンに接 続していて、該アクチュエータ機構は、該第一〜第三リフトピンを該ウェーハ プラテンの該滑らかな表面上方に延伸するべく操作可能であり、該アクチュエ ータ機構は、該第一〜第三リフトピンを少なくとも該ウェーハプラテンの該滑 らかな表面と同一高さに引きもどすべく操作可能である;
真空チャック。 - 該ウェーハプラテンの該滑らかな表面が半導体ウェーハ保持領域を備えている、請求項1に記載の真空チャック。
- 該真空開口部が、該半導体ウェーハ保持領域に設置されたほぼ円形の第一真空溝を備えている、請求項2に記載の真空チャック。
- 該ウェーハプラテンが、該ほぼ円形の第一真空溝を真空ポートに接続する真空通路をさらに備えていて、該真空ポートは該半導体ウェーハ保持領域の外側で該ウェーハプラテンの表面に設置されている、請求項3に記載の真空チャック。
- 該ウェーハプラテンが、該ほぼ円形の第一真空溝の直径の内側における該滑らかな表面に設置された、ほぼ円形の第二真空溝を備えている、請求項4に記載の真空チャック。
- 該真空通路が、該ほぼ円形の第二真空溝を該真空ポートに接続している、請求項5に記載の真空チャック。
- 該リフトピンを該アクチュエータ機構に接続するリフトピンサポート構造体をさらに具備する、請求項1に記載の真空チャック。
- 該リフトピンサポート構造体がリフトピンサポートプレートを備えている、請求項7に記載の真空チャック。
- 該アクチュエータ機構を該ウェーハプラテンに接続するアクチュエータサポートをさらに備えている、請求項1に記載の真空チャック。
- 該ウェーハプラテンが上部プラテン及び下部プラテンを備えていて:
a. 該上部プラテンは、滑らかな表面、第四〜第六リフトピン穴及び該真空開口部 を備えており;
b. 該下部プラテンが該上部プラテンに接続され、そして該下部プラテンは、第七 〜第八リフトピン穴備え、かつ該アクチュエータ機構を該上部プラテンに接続 しており、該ウェーハプラテンの該第一リフトピン穴は該第四及び該第七リフ トピン穴を備え、該ウェーハプラテンの該第二リフトピン穴は該第五及び該第 八リフトピン穴を備え、該ウェーハプラテンの該第三リフトピン穴は該第六及 び該第九リフトピン穴を備えている;請求項1に記載の真空チャック。 - 該下部プラテンに接続され、かつそれぞれが少なくとも該下部プラテンの該第一〜第三リフトピン穴それぞれの一部分に設置された第一〜第三ナイロンブッシュをさらに具備している、請求項10に記載の真空チャック。
- 該上部プラテンが該上部プラテンの該滑らかな表面と反対側の裏面に加熱エレメントを備えている、請求項11に記載の真空チャック。
- 該上部プラテンに接続され、かつそれぞれが少なくとも該上部プラテンの該第一〜第三リフトピン穴それぞれの一部分に設置された第一〜第三ナイロンブッシュをさらに具備している、請求項10に記載の真空チャック。
- 該ウェーハプラテンが第四リフトピン穴を備えている、請求項1に記載の真空チャック。
- 該第四リフトピン穴に取り付けられ、かつ該アクチュエータ機構に接続された第四リフトピンをさらに具備している、請求項14に記載の真空チャック。
- 該ウェーハプラテンが複数の補助リフトピン穴を備えている請求項1に記載の真空チャック。
- 複数の補助リフトピン穴に取り付けられ、かつ該アクチュエータ機構に接続されている複数の補助リフトピンをさらに具備する、請求項16に記載の真空チャック。
- 該アクチュエータ機構がエアーシリンダを備えている、請求項1に記載の真空チャック。
- 該アクチュエータ機構が電気−機械式駆動機構を備えている、請求項1に記載の真空チャック。
- 該アクチュエータ機構が油圧シリンダを備えている、請求項1に記載の真空チャック。
- 高圧加工処理中における半導体ウェーハを保持するための真空チャックであって、ウェーハプラテンと、第一〜第三ピンと、アクチュエータ機構とを具備する真空チャックにおいて:
a. 該ウェーハプラテンが、滑らかな表面と、第一〜第三リフトピン穴と、半導体 ウェーハの表面を真空引きするためのほぼ円形の真空開溝とを具備していて;
b. 該第一〜第三リフトピンが、それぞれ該第一〜第三リフトピン穴に取り付けら れていて;
c. 該アクチュエータ機構が、該第一〜第三リフトピンを該ウェーハプラテンに接 続していて、該アクチュエータ機構は、該第一〜第三リフトピンを該ウェーハ プラテンの該滑らかな表面上方に延伸するべく操作可能であり、該アクチュエ ータ機構は、該第一〜第三リフトピンを少なくとも該ウェーハプラテンの該滑 らかな表面と同一高さに引きもどすべく操作可能である;
真空チャック。 - 高圧加工処理中における半導体ウェーハを保持するための真空チャックであって、上部プラテンと、下部プラテンと、第一〜第三リフトピンと、アクチュエータ機構とを具備する真空チャックにおいて:
a. 該プラテンが、滑らかな表面と、第一〜第三リフトピン穴と、半導体ウェーハ の表面を真空引きするためのほぼ円形の真空開溝とを具備していて;
b. 該下部プラテンが、該上部プラテンに接続されていて、かつ第四〜第六リフト ピン穴を具備しており、該第四〜第六リフトピン穴はそれぞれ該上部プラテン の該第一〜第三リフトピン穴それぞれと整列していて;
c. 該第一〜第三リフトピンにおいて、該第一リフトピンは該上部プラテンの該第 一リフトピン穴と該下部プラテンの該第四リフトピン穴とに取り付けられ、該 第二リフトピンは該上部プラテンの該第二リフトピン穴と、該下部プラテンの 該第五リフトピン穴とに取り付けられ、該第三リフトピンは該上部プラテンの 該第三リフトピン穴と、該下部プラテンの該第六リフトピン穴とに取り付けら れており;
d. 該アクチュエータ機構が、該第一〜第三リフトピンを該下部プラテンに接続し ていて、該アクチュエータ機構は、該第一〜第三リフトピンを該上部プラテン の該滑らかな表面上方に延伸するべく操作可能であり、該アクチュエータ機構 は、該第一〜第三リフトピンを少なくとも該上部プラテンの該滑らかな表面と 同一高さに引きもどすべく操作可能である;
真空チャック。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/289,830 US6722642B1 (en) | 2002-11-06 | 2002-11-06 | High pressure compatible vacuum chuck for semiconductor wafer including lift mechanism |
PCT/US2003/035017 WO2004044953A2 (en) | 2002-11-06 | 2003-11-03 | High pressure compatible vacuum check for semiconductor wafer including lift mechanism |
Publications (2)
Publication Number | Publication Date |
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JP2006505952A true JP2006505952A (ja) | 2006-02-16 |
JP2006505952A5 JP2006505952A5 (ja) | 2006-07-27 |
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Application Number | Title | Priority Date | Filing Date |
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JP2004551690A Pending JP2006505952A (ja) | 2002-11-06 | 2003-11-03 | 半導体ウェーハ用の高圧力に適合可能なリフト機構を含んでいる真空チャック |
Country Status (7)
Country | Link |
---|---|
US (1) | US6722642B1 (ja) |
EP (1) | EP1560680A2 (ja) |
JP (1) | JP2006505952A (ja) |
CN (1) | CN100396440C (ja) |
AU (1) | AU2003291698A1 (ja) |
TW (1) | TWI317675B (ja) |
WO (1) | WO2004044953A2 (ja) |
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2003
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- 2003-11-03 AU AU2003291698A patent/AU2003291698A1/en not_active Abandoned
- 2003-11-03 EP EP03768590A patent/EP1560680A2/en not_active Withdrawn
- 2003-11-03 CN CNB2003801028396A patent/CN100396440C/zh not_active Expired - Fee Related
- 2003-11-03 WO PCT/US2003/035017 patent/WO2004044953A2/en not_active Application Discontinuation
- 2003-11-05 TW TW092130960A patent/TWI317675B/zh not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100955730B1 (ko) | 2008-05-30 | 2010-05-04 | 한국기계연구원 | Lloyd형 간섭 리소그라피 시스템의 진공 척 |
JP2021027170A (ja) * | 2019-08-05 | 2021-02-22 | 東京エレクトロン株式会社 | 基板処理装置および基板乾燥方法 |
JP7308688B2 (ja) | 2019-08-05 | 2023-07-14 | 東京エレクトロン株式会社 | 基板処理装置および基板乾燥方法 |
Also Published As
Publication number | Publication date |
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WO2004044953A2 (en) | 2004-05-27 |
AU2003291698A8 (en) | 2004-06-03 |
TW200416111A (en) | 2004-09-01 |
TWI317675B (en) | 2009-12-01 |
US6722642B1 (en) | 2004-04-20 |
CN100396440C (zh) | 2008-06-25 |
AU2003291698A1 (en) | 2004-06-03 |
CN1711154A (zh) | 2005-12-21 |
EP1560680A2 (en) | 2005-08-10 |
WO2004044953A3 (en) | 2005-04-21 |
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