JP2006503439A5 - - Google Patents
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- Publication number
- JP2006503439A5 JP2006503439A5 JP2004545696A JP2004545696A JP2006503439A5 JP 2006503439 A5 JP2006503439 A5 JP 2006503439A5 JP 2004545696 A JP2004545696 A JP 2004545696A JP 2004545696 A JP2004545696 A JP 2004545696A JP 2006503439 A5 JP2006503439 A5 JP 2006503439A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- electrode
- layer
- transistor
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 17
- 125000006850 spacer group Chemical group 0.000 claims 12
- 239000000463 material Substances 0.000 claims 10
- 238000000034 method Methods 0.000 claims 9
- 229910021332 silicide Inorganic materials 0.000 claims 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 9
- 239000003990 capacitor Substances 0.000 claims 7
- 230000005669 field effect Effects 0.000 claims 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- 238000000059 patterning Methods 0.000 claims 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- 235000012239 silicon dioxide Nutrition 0.000 claims 3
- 239000000377 silicon dioxide Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 210000004027 cell Anatomy 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 239000002019 doping agent Substances 0.000 claims 2
- 239000012777 electrically insulating material Substances 0.000 claims 2
- 238000000407 epitaxy Methods 0.000 claims 2
- 239000003870 refractory metal Substances 0.000 claims 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 230000006870 function Effects 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229910052701 rubidium Inorganic materials 0.000 claims 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims 1
- 210000000352 storage cell Anatomy 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10248723A DE10248723A1 (de) | 2002-10-18 | 2002-10-18 | Integrierte Schaltungsanordnung mit Kondensatoren und mit vorzugsweise planaren Transistoren und Herstellungsverfahren |
| PCT/DE2003/003354 WO2004038802A2 (de) | 2002-10-18 | 2003-10-10 | Integrierte schaltungsanordnung mit kondensatoren und mit vorzugsweise planaren transistoren und herstellungsverfahren |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006503439A JP2006503439A (ja) | 2006-01-26 |
| JP2006503439A5 true JP2006503439A5 (OSRAM) | 2009-12-24 |
Family
ID=32087020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004545696A Pending JP2006503439A (ja) | 2002-10-18 | 2003-10-10 | キャパシタと好ましくはプレーナ型のトランジスタとを有する集積回路構造およびその製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7173302B2 (OSRAM) |
| EP (1) | EP1552561B1 (OSRAM) |
| JP (1) | JP2006503439A (OSRAM) |
| KR (1) | KR100757531B1 (OSRAM) |
| CN (1) | CN100557803C (OSRAM) |
| DE (2) | DE10248723A1 (OSRAM) |
| TW (1) | TWI274417B (OSRAM) |
| WO (1) | WO2004038802A2 (OSRAM) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040097027A1 (en) * | 2002-11-14 | 2004-05-20 | Won-Kyu Park | Method for manufacturing semiconductor device |
| FR2872958B1 (fr) * | 2004-07-12 | 2008-05-02 | Commissariat Energie Atomique | Procede de fabrication d'un film mince structure et film mince obtenu par un tel procede |
| FR2879020B1 (fr) * | 2004-12-08 | 2007-05-04 | Commissariat Energie Atomique | Procede d'isolation de motifs formes dans un film mince en materiau semi-conducteur oxydable |
| US7915681B2 (en) * | 2007-06-18 | 2011-03-29 | Infineon Technologies Ag | Transistor with reduced charge carrier mobility |
| KR101017809B1 (ko) * | 2008-03-13 | 2011-02-28 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조 방법 |
| JP5381053B2 (ja) * | 2008-12-01 | 2014-01-08 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| WO2011152233A1 (en) * | 2010-06-04 | 2011-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8659066B2 (en) * | 2012-01-06 | 2014-02-25 | International Business Machines Corporation | Integrated circuit with a thin body field effect transistor and capacitor |
| WO2015015700A1 (ja) * | 2013-08-02 | 2015-02-05 | シャープ株式会社 | 放射線検出用半導体装置 |
| US10418364B2 (en) * | 2016-08-31 | 2019-09-17 | Globalfoundries Inc. | Semiconductor device structure with self-aligned capacitor device |
| US9792958B1 (en) * | 2017-02-16 | 2017-10-17 | Micron Technology, Inc. | Active boundary quilt architecture memory |
| US11121139B2 (en) * | 2017-11-16 | 2021-09-14 | International Business Machines Corporation | Hafnium oxide and zirconium oxide based ferroelectric devices with textured iridium bottom electrodes |
| US10600778B2 (en) | 2017-11-16 | 2020-03-24 | International Business Machines Corporation | Method and apparatus of forming high voltage varactor and vertical transistor on a substrate |
| JP2025014075A (ja) * | 2021-10-08 | 2025-01-29 | 株式会社村田製作所 | 電子素子、および回路装置 |
| KR20230123345A (ko) * | 2022-02-16 | 2023-08-23 | 삼성전자주식회사 | 반도체 메모리 소자 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57176757A (en) * | 1981-04-22 | 1982-10-30 | Nec Corp | Semiconductor device |
| JPS61113271A (ja) * | 1984-11-08 | 1986-05-31 | Matsushita Electronics Corp | 半導体記憶素子 |
| JPS62259466A (ja) * | 1986-05-02 | 1987-11-11 | Sony Corp | メモリ装置 |
| US4753896A (en) | 1986-11-21 | 1988-06-28 | Texas Instruments Incorporated | Sidewall channel stop process |
| JPH05326556A (ja) * | 1992-05-18 | 1993-12-10 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| JPH07335904A (ja) | 1994-06-14 | 1995-12-22 | Semiconductor Energy Lab Co Ltd | 薄膜半導体集積回路 |
| JP3107691B2 (ja) * | 1993-12-03 | 2000-11-13 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
| JPH08125034A (ja) * | 1993-12-03 | 1996-05-17 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JP3312083B2 (ja) * | 1994-06-13 | 2002-08-05 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP3504025B2 (ja) * | 1995-06-06 | 2004-03-08 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| DE19544721C1 (de) * | 1995-11-30 | 1997-04-30 | Siemens Ag | Verfahren zur Herstellung einer integrierten Schaltungsanordnung mit mindestens einem MOS-Transistor |
| DE59707274D1 (de) | 1996-09-27 | 2002-06-20 | Infineon Technologies Ag | Integrierte CMOS-Schaltungsanordnung und Verfahren zu deren Herstellung |
| JP4147594B2 (ja) * | 1997-01-29 | 2008-09-10 | セイコーエプソン株式会社 | アクティブマトリクス基板、液晶表示装置および電子機器 |
| US6294420B1 (en) * | 1997-01-31 | 2001-09-25 | Texas Instruments Incorporated | Integrated circuit capacitor |
| US6133075A (en) * | 1997-04-25 | 2000-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
| US6018174A (en) * | 1998-04-06 | 2000-01-25 | Siemens Aktiengesellschaft | Bottle-shaped trench capacitor with epi buried layer |
| JP2001051292A (ja) | 1998-06-12 | 2001-02-23 | Semiconductor Energy Lab Co Ltd | 半導体装置および半導体表示装置 |
| US6140162A (en) * | 1998-06-19 | 2000-10-31 | Lg Electronics Inc. | Reduction of masking and doping steps in a method of fabricating a liquid crystal display |
| JP2000022160A (ja) | 1998-07-06 | 2000-01-21 | Hitachi Ltd | 半導体集積回路及びその製造方法 |
| JP3399432B2 (ja) | 1999-02-26 | 2003-04-21 | セイコーエプソン株式会社 | 電気光学装置の製造方法及び電気光学装置 |
| JP4963750B2 (ja) * | 2000-08-10 | 2012-06-27 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
| JP4614522B2 (ja) * | 2000-10-25 | 2011-01-19 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
-
2002
- 2002-10-18 DE DE10248723A patent/DE10248723A1/de not_active Ceased
-
2003
- 2003-09-22 TW TW092126126A patent/TWI274417B/zh not_active IP Right Cessation
- 2003-10-10 DE DE50312210T patent/DE50312210D1/de not_active Expired - Lifetime
- 2003-10-10 EP EP03757707A patent/EP1552561B1/de not_active Expired - Lifetime
- 2003-10-10 WO PCT/DE2003/003354 patent/WO2004038802A2/de not_active Ceased
- 2003-10-10 KR KR1020057006707A patent/KR100757531B1/ko not_active Expired - Fee Related
- 2003-10-10 CN CNB2003801016685A patent/CN100557803C/zh not_active Expired - Fee Related
- 2003-10-10 JP JP2004545696A patent/JP2006503439A/ja active Pending
- 2003-10-10 US US10/531,493 patent/US7173302B2/en not_active Expired - Lifetime
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