TWI274417B - Integrated circuit arrangement having capacitors and having preferably planar transistors and fabrication method - Google Patents
Integrated circuit arrangement having capacitors and having preferably planar transistors and fabrication method Download PDFInfo
- Publication number
- TWI274417B TWI274417B TW092126126A TW92126126A TWI274417B TW I274417 B TWI274417 B TW I274417B TW 092126126 A TW092126126 A TW 092126126A TW 92126126 A TW92126126 A TW 92126126A TW I274417 B TWI274417 B TW I274417B
- Authority
- TW
- Taiwan
- Prior art keywords
- region
- electrode
- insulating
- layer
- transistor
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 29
- 230000005669 field effect Effects 0.000 claims description 23
- 239000013078 crystal Substances 0.000 claims description 18
- 125000006850 spacer group Chemical group 0.000 claims description 16
- 238000000059 patterning Methods 0.000 claims description 10
- 239000004575 stone Substances 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 7
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 6
- 239000012777 electrically insulating material Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 4
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 4
- 239000000428 dust Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- 150000004772 tellurides Chemical group 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 238000005266 casting Methods 0.000 claims 2
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical group [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 claims 2
- 229940126062 Compound A Drugs 0.000 claims 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 210000004556 brain Anatomy 0.000 claims 1
- 150000001785 cerium compounds Chemical class 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims 1
- 238000003860 storage Methods 0.000 description 12
- 230000005611 electricity Effects 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 238000011161 development Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000007943 implant Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical group [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 241000283973 Oryctolagus cuniculus Species 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000008267 milk Substances 0.000 description 2
- 210000004080 milk Anatomy 0.000 description 2
- 235000013336 milk Nutrition 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 241000238631 Hexapoda Species 0.000 description 1
- 241001629511 Litchi Species 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 241000282320 Panthera leo Species 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- QAAXRTPGRLVPFH-UHFFFAOYSA-N [Bi].[Cu] Chemical compound [Bi].[Cu] QAAXRTPGRLVPFH-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 208000002173 dizziness Diseases 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 150000003431 steroids Chemical class 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10248723A DE10248723A1 (de) | 2002-10-18 | 2002-10-18 | Integrierte Schaltungsanordnung mit Kondensatoren und mit vorzugsweise planaren Transistoren und Herstellungsverfahren |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200408114A TW200408114A (en) | 2004-05-16 |
| TWI274417B true TWI274417B (en) | 2007-02-21 |
Family
ID=32087020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092126126A TWI274417B (en) | 2002-10-18 | 2003-09-22 | Integrated circuit arrangement having capacitors and having preferably planar transistors and fabrication method |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7173302B2 (OSRAM) |
| EP (1) | EP1552561B1 (OSRAM) |
| JP (1) | JP2006503439A (OSRAM) |
| KR (1) | KR100757531B1 (OSRAM) |
| CN (1) | CN100557803C (OSRAM) |
| DE (2) | DE10248723A1 (OSRAM) |
| TW (1) | TWI274417B (OSRAM) |
| WO (1) | WO2004038802A2 (OSRAM) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040097027A1 (en) * | 2002-11-14 | 2004-05-20 | Won-Kyu Park | Method for manufacturing semiconductor device |
| FR2872958B1 (fr) * | 2004-07-12 | 2008-05-02 | Commissariat Energie Atomique | Procede de fabrication d'un film mince structure et film mince obtenu par un tel procede |
| FR2879020B1 (fr) * | 2004-12-08 | 2007-05-04 | Commissariat Energie Atomique | Procede d'isolation de motifs formes dans un film mince en materiau semi-conducteur oxydable |
| US7915681B2 (en) * | 2007-06-18 | 2011-03-29 | Infineon Technologies Ag | Transistor with reduced charge carrier mobility |
| KR101017809B1 (ko) * | 2008-03-13 | 2011-02-28 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조 방법 |
| JP5381053B2 (ja) * | 2008-12-01 | 2014-01-08 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| WO2011152233A1 (en) * | 2010-06-04 | 2011-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8659066B2 (en) * | 2012-01-06 | 2014-02-25 | International Business Machines Corporation | Integrated circuit with a thin body field effect transistor and capacitor |
| WO2015015700A1 (ja) * | 2013-08-02 | 2015-02-05 | シャープ株式会社 | 放射線検出用半導体装置 |
| US10418364B2 (en) * | 2016-08-31 | 2019-09-17 | Globalfoundries Inc. | Semiconductor device structure with self-aligned capacitor device |
| US9792958B1 (en) * | 2017-02-16 | 2017-10-17 | Micron Technology, Inc. | Active boundary quilt architecture memory |
| US11121139B2 (en) * | 2017-11-16 | 2021-09-14 | International Business Machines Corporation | Hafnium oxide and zirconium oxide based ferroelectric devices with textured iridium bottom electrodes |
| US10600778B2 (en) | 2017-11-16 | 2020-03-24 | International Business Machines Corporation | Method and apparatus of forming high voltage varactor and vertical transistor on a substrate |
| JP2025014075A (ja) * | 2021-10-08 | 2025-01-29 | 株式会社村田製作所 | 電子素子、および回路装置 |
| KR20230123345A (ko) * | 2022-02-16 | 2023-08-23 | 삼성전자주식회사 | 반도체 메모리 소자 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57176757A (en) * | 1981-04-22 | 1982-10-30 | Nec Corp | Semiconductor device |
| JPS61113271A (ja) * | 1984-11-08 | 1986-05-31 | Matsushita Electronics Corp | 半導体記憶素子 |
| JPS62259466A (ja) * | 1986-05-02 | 1987-11-11 | Sony Corp | メモリ装置 |
| US4753896A (en) | 1986-11-21 | 1988-06-28 | Texas Instruments Incorporated | Sidewall channel stop process |
| JPH05326556A (ja) * | 1992-05-18 | 1993-12-10 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| JPH07335904A (ja) | 1994-06-14 | 1995-12-22 | Semiconductor Energy Lab Co Ltd | 薄膜半導体集積回路 |
| JP3107691B2 (ja) * | 1993-12-03 | 2000-11-13 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
| JPH08125034A (ja) * | 1993-12-03 | 1996-05-17 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JP3312083B2 (ja) * | 1994-06-13 | 2002-08-05 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP3504025B2 (ja) * | 1995-06-06 | 2004-03-08 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| DE19544721C1 (de) * | 1995-11-30 | 1997-04-30 | Siemens Ag | Verfahren zur Herstellung einer integrierten Schaltungsanordnung mit mindestens einem MOS-Transistor |
| DE59707274D1 (de) | 1996-09-27 | 2002-06-20 | Infineon Technologies Ag | Integrierte CMOS-Schaltungsanordnung und Verfahren zu deren Herstellung |
| JP4147594B2 (ja) * | 1997-01-29 | 2008-09-10 | セイコーエプソン株式会社 | アクティブマトリクス基板、液晶表示装置および電子機器 |
| US6294420B1 (en) * | 1997-01-31 | 2001-09-25 | Texas Instruments Incorporated | Integrated circuit capacitor |
| US6133075A (en) * | 1997-04-25 | 2000-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
| US6018174A (en) * | 1998-04-06 | 2000-01-25 | Siemens Aktiengesellschaft | Bottle-shaped trench capacitor with epi buried layer |
| JP2001051292A (ja) | 1998-06-12 | 2001-02-23 | Semiconductor Energy Lab Co Ltd | 半導体装置および半導体表示装置 |
| US6140162A (en) * | 1998-06-19 | 2000-10-31 | Lg Electronics Inc. | Reduction of masking and doping steps in a method of fabricating a liquid crystal display |
| JP2000022160A (ja) | 1998-07-06 | 2000-01-21 | Hitachi Ltd | 半導体集積回路及びその製造方法 |
| JP3399432B2 (ja) | 1999-02-26 | 2003-04-21 | セイコーエプソン株式会社 | 電気光学装置の製造方法及び電気光学装置 |
| JP4963750B2 (ja) * | 2000-08-10 | 2012-06-27 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
| JP4614522B2 (ja) * | 2000-10-25 | 2011-01-19 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
-
2002
- 2002-10-18 DE DE10248723A patent/DE10248723A1/de not_active Ceased
-
2003
- 2003-09-22 TW TW092126126A patent/TWI274417B/zh not_active IP Right Cessation
- 2003-10-10 DE DE50312210T patent/DE50312210D1/de not_active Expired - Lifetime
- 2003-10-10 EP EP03757707A patent/EP1552561B1/de not_active Expired - Lifetime
- 2003-10-10 WO PCT/DE2003/003354 patent/WO2004038802A2/de not_active Ceased
- 2003-10-10 KR KR1020057006707A patent/KR100757531B1/ko not_active Expired - Fee Related
- 2003-10-10 CN CNB2003801016685A patent/CN100557803C/zh not_active Expired - Fee Related
- 2003-10-10 JP JP2004545696A patent/JP2006503439A/ja active Pending
- 2003-10-10 US US10/531,493 patent/US7173302B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| WO2004038802A2 (de) | 2004-05-06 |
| JP2006503439A (ja) | 2006-01-26 |
| US20060022302A1 (en) | 2006-02-02 |
| DE10248723A1 (de) | 2004-05-06 |
| US7173302B2 (en) | 2007-02-06 |
| KR20050053780A (ko) | 2005-06-08 |
| KR100757531B1 (ko) | 2007-09-11 |
| TW200408114A (en) | 2004-05-16 |
| EP1552561B1 (de) | 2009-12-09 |
| CN100557803C (zh) | 2009-11-04 |
| WO2004038802A3 (de) | 2004-09-10 |
| DE50312210D1 (de) | 2010-01-21 |
| CN1706045A (zh) | 2005-12-07 |
| EP1552561A2 (de) | 2005-07-13 |
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