CN100557803C - 包含电容器及较佳平面式晶体管的集成电路装置及制造方法 - Google Patents

包含电容器及较佳平面式晶体管的集成电路装置及制造方法 Download PDF

Info

Publication number
CN100557803C
CN100557803C CNB2003801016685A CN200380101668A CN100557803C CN 100557803 C CN100557803 C CN 100557803C CN B2003801016685 A CNB2003801016685 A CN B2003801016685A CN 200380101668 A CN200380101668 A CN 200380101668A CN 100557803 C CN100557803 C CN 100557803C
Authority
CN
China
Prior art keywords
regions
electrode
zone
insulating regions
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2003801016685A
Other languages
English (en)
Chinese (zh)
Other versions
CN1706045A (zh
Inventor
R·布雷德洛
J·哈特维奇
C·帕查
W·雷斯纳
T·舒尔滋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of CN1706045A publication Critical patent/CN1706045A/zh
Application granted granted Critical
Publication of CN100557803C publication Critical patent/CN100557803C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
CNB2003801016685A 2002-10-18 2003-10-10 包含电容器及较佳平面式晶体管的集成电路装置及制造方法 Expired - Fee Related CN100557803C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10248723.5 2002-10-18
DE10248723A DE10248723A1 (de) 2002-10-18 2002-10-18 Integrierte Schaltungsanordnung mit Kondensatoren und mit vorzugsweise planaren Transistoren und Herstellungsverfahren
PCT/DE2003/003354 WO2004038802A2 (de) 2002-10-18 2003-10-10 Integrierte schaltungsanordnung mit kondensatoren und mit vorzugsweise planaren transistoren und herstellungsverfahren

Publications (2)

Publication Number Publication Date
CN1706045A CN1706045A (zh) 2005-12-07
CN100557803C true CN100557803C (zh) 2009-11-04

Family

ID=32087020

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2003801016685A Expired - Fee Related CN100557803C (zh) 2002-10-18 2003-10-10 包含电容器及较佳平面式晶体管的集成电路装置及制造方法

Country Status (8)

Country Link
US (1) US7173302B2 (OSRAM)
EP (1) EP1552561B1 (OSRAM)
JP (1) JP2006503439A (OSRAM)
KR (1) KR100757531B1 (OSRAM)
CN (1) CN100557803C (OSRAM)
DE (2) DE10248723A1 (OSRAM)
TW (1) TWI274417B (OSRAM)
WO (1) WO2004038802A2 (OSRAM)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040097027A1 (en) * 2002-11-14 2004-05-20 Won-Kyu Park Method for manufacturing semiconductor device
FR2872958B1 (fr) * 2004-07-12 2008-05-02 Commissariat Energie Atomique Procede de fabrication d'un film mince structure et film mince obtenu par un tel procede
FR2879020B1 (fr) * 2004-12-08 2007-05-04 Commissariat Energie Atomique Procede d'isolation de motifs formes dans un film mince en materiau semi-conducteur oxydable
US7915681B2 (en) * 2007-06-18 2011-03-29 Infineon Technologies Ag Transistor with reduced charge carrier mobility
KR101017809B1 (ko) * 2008-03-13 2011-02-28 주식회사 하이닉스반도체 반도체 소자 및 그 제조 방법
JP5381053B2 (ja) * 2008-12-01 2014-01-08 富士通セミコンダクター株式会社 半導体装置の製造方法
WO2011152233A1 (en) * 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8659066B2 (en) * 2012-01-06 2014-02-25 International Business Machines Corporation Integrated circuit with a thin body field effect transistor and capacitor
WO2015015700A1 (ja) * 2013-08-02 2015-02-05 シャープ株式会社 放射線検出用半導体装置
US10418364B2 (en) * 2016-08-31 2019-09-17 Globalfoundries Inc. Semiconductor device structure with self-aligned capacitor device
US9792958B1 (en) * 2017-02-16 2017-10-17 Micron Technology, Inc. Active boundary quilt architecture memory
US11121139B2 (en) * 2017-11-16 2021-09-14 International Business Machines Corporation Hafnium oxide and zirconium oxide based ferroelectric devices with textured iridium bottom electrodes
US10600778B2 (en) 2017-11-16 2020-03-24 International Business Machines Corporation Method and apparatus of forming high voltage varactor and vertical transistor on a substrate
JP2025014075A (ja) * 2021-10-08 2025-01-29 株式会社村田製作所 電子素子、および回路装置
KR20230123345A (ko) * 2022-02-16 2023-08-23 삼성전자주식회사 반도체 메모리 소자

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4753896A (en) * 1986-11-21 1988-06-28 Texas Instruments Incorporated Sidewall channel stop process
US5998807A (en) * 1996-09-27 1999-12-07 Siemens Aktiengesellschaft Integrated CMOS circuit arrangement and method for the manufacture thereof
CN1252624A (zh) * 1998-06-26 2000-05-10 西门子公司 带有外延隐埋层的瓶形沟槽式电容器
US6133075A (en) * 1997-04-25 2000-10-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6140162A (en) * 1998-06-19 2000-10-31 Lg Electronics Inc. Reduction of masking and doping steps in a method of fabricating a liquid crystal display
US6414345B1 (en) * 1994-06-13 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including active matrix circuit
US6417057B1 (en) * 1994-06-14 2002-07-09 Semiconductor Energy Laboratory Co., Ltd. Method of forming a semiconductor device having a TFT utilizing optical annealing before a gate electrode is formed
US6569717B1 (en) * 1999-02-26 2003-05-27 Seiko Epson Corporation Semiconductor device production method, electro-optical device production method, semiconductor device, and electro-optical device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176757A (en) * 1981-04-22 1982-10-30 Nec Corp Semiconductor device
JPS61113271A (ja) * 1984-11-08 1986-05-31 Matsushita Electronics Corp 半導体記憶素子
JPS62259466A (ja) * 1986-05-02 1987-11-11 Sony Corp メモリ装置
JPH05326556A (ja) * 1992-05-18 1993-12-10 Sanyo Electric Co Ltd 半導体装置の製造方法
JP3107691B2 (ja) * 1993-12-03 2000-11-13 株式会社東芝 半導体記憶装置及びその製造方法
JPH08125034A (ja) * 1993-12-03 1996-05-17 Mitsubishi Electric Corp 半導体記憶装置
JP3504025B2 (ja) * 1995-06-06 2004-03-08 三菱電機株式会社 半導体装置およびその製造方法
DE19544721C1 (de) * 1995-11-30 1997-04-30 Siemens Ag Verfahren zur Herstellung einer integrierten Schaltungsanordnung mit mindestens einem MOS-Transistor
JP4147594B2 (ja) * 1997-01-29 2008-09-10 セイコーエプソン株式会社 アクティブマトリクス基板、液晶表示装置および電子機器
US6294420B1 (en) * 1997-01-31 2001-09-25 Texas Instruments Incorporated Integrated circuit capacitor
JP2001051292A (ja) 1998-06-12 2001-02-23 Semiconductor Energy Lab Co Ltd 半導体装置および半導体表示装置
JP2000022160A (ja) 1998-07-06 2000-01-21 Hitachi Ltd 半導体集積回路及びその製造方法
JP4963750B2 (ja) * 2000-08-10 2012-06-27 ルネサスエレクトロニクス株式会社 半導体集積回路装置
JP4614522B2 (ja) * 2000-10-25 2011-01-19 富士通セミコンダクター株式会社 半導体装置及びその製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4753896A (en) * 1986-11-21 1988-06-28 Texas Instruments Incorporated Sidewall channel stop process
US6414345B1 (en) * 1994-06-13 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including active matrix circuit
US6417057B1 (en) * 1994-06-14 2002-07-09 Semiconductor Energy Laboratory Co., Ltd. Method of forming a semiconductor device having a TFT utilizing optical annealing before a gate electrode is formed
US5998807A (en) * 1996-09-27 1999-12-07 Siemens Aktiengesellschaft Integrated CMOS circuit arrangement and method for the manufacture thereof
US6133075A (en) * 1997-04-25 2000-10-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6140162A (en) * 1998-06-19 2000-10-31 Lg Electronics Inc. Reduction of masking and doping steps in a method of fabricating a liquid crystal display
CN1252624A (zh) * 1998-06-26 2000-05-10 西门子公司 带有外延隐埋层的瓶形沟槽式电容器
US6569717B1 (en) * 1999-02-26 2003-05-27 Seiko Epson Corporation Semiconductor device production method, electro-optical device production method, semiconductor device, and electro-optical device

Also Published As

Publication number Publication date
WO2004038802A2 (de) 2004-05-06
JP2006503439A (ja) 2006-01-26
US20060022302A1 (en) 2006-02-02
DE10248723A1 (de) 2004-05-06
US7173302B2 (en) 2007-02-06
KR20050053780A (ko) 2005-06-08
KR100757531B1 (ko) 2007-09-11
TWI274417B (en) 2007-02-21
TW200408114A (en) 2004-05-16
EP1552561B1 (de) 2009-12-09
WO2004038802A3 (de) 2004-09-10
DE50312210D1 (de) 2010-01-21
CN1706045A (zh) 2005-12-07
EP1552561A2 (de) 2005-07-13

Similar Documents

Publication Publication Date Title
CN100468621C (zh) 包含电容器的集成电路装置及制造方法
US7682896B2 (en) Trench metal-insulator-metal (MIM) capacitors integrated with middle-of-line metal contacts, and method of fabricating same
JP3963970B2 (ja) Ｄｒａｍセルおよびその形成方法
US6534807B2 (en) Local interconnect junction on insulator (JOI) structure
JP3378414B2 (ja) 半導体装置
KR100306095B1 (ko) 반도체기억장치
US7875919B2 (en) Shallow trench capacitor compatible with high-K / metal gate
US6087214A (en) Arrangement and method for DRAM cell using shallow trench isolation
CN100557803C (zh) 包含电容器及较佳平面式晶体管的集成电路装置及制造方法
US8241981B1 (en) Method of fabricating a deep trench (DT) metal-insulator-metal (MIM) capacitor
US11894039B2 (en) Fft-dram
US7390730B2 (en) Method of fabricating a body capacitor for SOI memory
US6335248B1 (en) Dual workfunction MOSFETs with borderless diffusion contacts for high-performance embedded DRAM technology
US6605838B1 (en) Process flow for thick isolation collar with reduced length
US11855099B2 (en) Metal-insulator-semiconductor tunnel diode memory
CN119521659B (zh) 半导体结构及其制作方法
JP2003124463A (ja) 半導体装置
JPH0329186B2 (OSRAM)
JPH06120450A (ja) 半導体記憶装置及びその製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20091104

Termination date: 20181010

CF01 Termination of patent right due to non-payment of annual fee