JP2006295025A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

Info

Publication number
JP2006295025A
JP2006295025A JP2005116618A JP2005116618A JP2006295025A JP 2006295025 A JP2006295025 A JP 2006295025A JP 2005116618 A JP2005116618 A JP 2005116618A JP 2005116618 A JP2005116618 A JP 2005116618A JP 2006295025 A JP2006295025 A JP 2006295025A
Authority
JP
Japan
Prior art keywords
film
gate electrode
insulating layer
semiconductor device
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005116618A
Other languages
English (en)
Japanese (ja)
Inventor
Takeshi Serata
剛 瀬良田
Shuji Enomoto
修治 榎本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2005116618A priority Critical patent/JP2006295025A/ja
Priority to TW095113213A priority patent/TW200707586A/zh
Priority to US11/403,198 priority patent/US20060252196A1/en
Priority to KR1020060033688A priority patent/KR100748906B1/ko
Priority to CNA2008101766741A priority patent/CN101425540A/zh
Priority to CNB2006100752121A priority patent/CN100501948C/zh
Publication of JP2006295025A publication Critical patent/JP2006295025A/ja
Priority to KR1020070050115A priority patent/KR100754262B1/ko
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H10D84/0137—Manufacturing their gate conductors the gate conductors being silicided
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0147—Manufacturing their gate sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2005116618A 2005-04-14 2005-04-14 半導体装置およびその製造方法 Pending JP2006295025A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2005116618A JP2006295025A (ja) 2005-04-14 2005-04-14 半導体装置およびその製造方法
TW095113213A TW200707586A (en) 2005-04-14 2006-04-13 Semiconductor apparatus and manufacturing method therefor
US11/403,198 US20060252196A1 (en) 2005-04-14 2006-04-13 Semiconductor device and method for producing same
KR1020060033688A KR100748906B1 (ko) 2005-04-14 2006-04-13 반도체 장치 및 그 제조 방법
CNA2008101766741A CN101425540A (zh) 2005-04-14 2006-04-14 半导体器件及其制造方法
CNB2006100752121A CN100501948C (zh) 2005-04-14 2006-04-14 半导体器件及其制造方法
KR1020070050115A KR100754262B1 (ko) 2005-04-14 2007-05-23 반도체 장치 및 그 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005116618A JP2006295025A (ja) 2005-04-14 2005-04-14 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
JP2006295025A true JP2006295025A (ja) 2006-10-26

Family

ID=37077886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005116618A Pending JP2006295025A (ja) 2005-04-14 2005-04-14 半導体装置およびその製造方法

Country Status (5)

Country Link
US (1) US20060252196A1 (enExample)
JP (1) JP2006295025A (enExample)
KR (2) KR100748906B1 (enExample)
CN (2) CN101425540A (enExample)
TW (1) TW200707586A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009272573A (ja) * 2008-05-09 2009-11-19 Fujitsu Microelectronics Ltd 半導体装置の製造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100755671B1 (ko) * 2006-07-14 2007-09-05 삼성전자주식회사 균일한 두께의 니켈 합금 실리사이드층을 가진 반도체 소자및 그 제조 방법
KR101080200B1 (ko) * 2009-04-14 2011-11-07 주식회사 하이닉스반도체 반도체 메모리 장치 및 그 리프레쉬 제어 방법
KR102301249B1 (ko) * 2015-11-16 2021-09-10 삼성전자주식회사 반도체 장치
JP7034834B2 (ja) * 2018-05-30 2022-03-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR102675935B1 (ko) * 2019-12-16 2024-06-18 삼성전자주식회사 반도체 소자

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11233770A (ja) * 1997-09-02 1999-08-27 Sony Corp 半導体装置の製造方法
JP2000091560A (ja) * 1998-09-08 2000-03-31 Nec Corp 半導体装置及びその製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW232751B (en) * 1992-10-09 1994-10-21 Semiconductor Energy Res Co Ltd Semiconductor device and method for forming the same
JP3382743B2 (ja) * 1995-01-27 2003-03-04 株式会社リコー 半導体装置の製造方法
US6060387A (en) * 1995-11-20 2000-05-09 Compaq Computer Corporation Transistor fabrication process in which a contact metallization is formed with different silicide thickness over gate interconnect material and transistor source/drain regions
US5731239A (en) * 1997-01-22 1998-03-24 Chartered Semiconductor Manufacturing Pte Ltd. Method of making self-aligned silicide narrow gate electrodes for field effect transistors having low sheet resistance
US6306712B1 (en) * 1997-12-05 2001-10-23 Texas Instruments Incorporated Sidewall process and method of implantation for improved CMOS with benefit of low CGD, improved doping profiles, and insensitivity to chemical processing
US20010053572A1 (en) * 2000-02-23 2001-12-20 Yoshinari Ichihashi Semiconductor device having opening and method of fabricating the same
US6803318B1 (en) * 2000-09-14 2004-10-12 Cypress Semiconductor Corp. Method of forming self aligned contacts
US6376320B1 (en) * 2000-11-15 2002-04-23 Advanced Micro Devices, Inc. Method for forming field effect transistor with silicides of different thickness and of different materials for the source/drain and the gate
KR100396469B1 (ko) * 2001-06-29 2003-09-02 삼성전자주식회사 반도체 장치의 게이트 전극 형성 방법 및 이를 이용한불휘발성 메모리 장치의 제조방법
JP3657915B2 (ja) * 2002-01-31 2005-06-08 株式会社東芝 半導体装置および半導体装置の製造方法
US6657244B1 (en) * 2002-06-28 2003-12-02 International Business Machines Corporation Structure and method to reduce silicon substrate consumption and improve gate sheet resistance during silicide formation
CN1270362C (zh) * 2002-09-18 2006-08-16 上海宏力半导体制造有限公司 形成自行对准金属硅化物的方法
JP4057985B2 (ja) * 2003-09-19 2008-03-05 株式会社東芝 半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11233770A (ja) * 1997-09-02 1999-08-27 Sony Corp 半導体装置の製造方法
JP2000091560A (ja) * 1998-09-08 2000-03-31 Nec Corp 半導体装置及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009272573A (ja) * 2008-05-09 2009-11-19 Fujitsu Microelectronics Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
KR20070062957A (ko) 2007-06-18
TW200707586A (en) 2007-02-16
KR100748906B1 (ko) 2007-08-13
CN100501948C (zh) 2009-06-17
US20060252196A1 (en) 2006-11-09
KR20060108537A (ko) 2006-10-18
CN101425540A (zh) 2009-05-06
CN1848392A (zh) 2006-10-18
TWI308779B (enExample) 2009-04-11
KR100754262B1 (ko) 2007-09-03

Similar Documents

Publication Publication Date Title
JP3793190B2 (ja) 半導体装置の製造方法
JP2002170953A (ja) 半導体装置及びその製造方法
KR100754262B1 (ko) 반도체 장치 및 그 제조 방법
JP2009509325A (ja) 半導体デバイスおよびその製造方法
US6436759B1 (en) Method for fabricating a MOS transistor of an embedded memory
US7495299B2 (en) Semiconductor device
US7371646B2 (en) Manufacture of insulated gate type field effect transistor
US20050253204A1 (en) Method of forming silicided gate structure
US6780691B2 (en) Method to fabricate elevated source/drain transistor with large area for silicidation
JP2010098157A (ja) 半導体装置の製造方法
KR100589490B1 (ko) 반도체 소자의 제조 방법
JP2002110966A (ja) 半導体装置の製造方法および半導体装置
JP4122193B2 (ja) 半導体装置の製造方法
JP2008085205A (ja) 半導体装置及びその製造方法
JP3574644B2 (ja) 半導体装置の製造方法
JP4981288B2 (ja) 半導体装置のシリサイド膜の形成方法
KR100609239B1 (ko) 반도체 소자의 제조 방법
KR100460200B1 (ko) 반도체 소자 및 그 제조 방법
KR100552859B1 (ko) 반도체 소자의 제조 방법
JP2009016754A (ja) 半導体装置及びその製造方法
JP2006339597A (ja) 半導体装置およびその製造方法
KR100404231B1 (ko) 반도체 소자의 제조방법
KR100591181B1 (ko) 반도체 소자 및 그 제조방법
US20080258145A1 (en) Semiconductor Devices Including an Amorphous Region in an Interface Between a Device Isolation Layer and a Source/Drain Diffusion Layer
JP2638558B2 (ja) 半導体装置及びその製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070822

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090218

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110705

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20111101