JP4057985B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4057985B2 JP4057985B2 JP2003327653A JP2003327653A JP4057985B2 JP 4057985 B2 JP4057985 B2 JP 4057985B2 JP 2003327653 A JP2003327653 A JP 2003327653A JP 2003327653 A JP2003327653 A JP 2003327653A JP 4057985 B2 JP4057985 B2 JP 4057985B2
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- 239000004065 semiconductor Substances 0.000 title claims description 48
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 238000002955 isolation Methods 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 44
- 239000002184 metal Substances 0.000 claims description 42
- 229910052751 metal Inorganic materials 0.000 claims description 42
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 36
- 229910021332 silicide Inorganic materials 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 28
- 238000005530 etching Methods 0.000 claims description 13
- 238000000638 solvent extraction Methods 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000005669 field effect Effects 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Description
まず、この発明の第1実施形態の半導体装置としてのMOS型電界効果トランジスタ(以下、MOSFETと記す)について説明する。
次に、この発明の第2実施形態の半導体装置としてのMOS型電界効果トランジスタ(MOSFET)について説明する。
Claims (2)
- 半導体基板に、素子が形成される素子領域を区画する素子分離領域を形成する工程と、
前記素子領域内の前記半導体基板上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上にゲート電極を形成する工程と、
前記ゲート電極の両側の前記半導体基板の表面領域に、エクステンション領域を形成する工程と、
前記ゲート電極の両側面上にゲート側壁膜を形成する工程と、
前記ゲート側壁膜の外側の前記半導体基板の表面領域に、ソース/ドレイン領域を形成する工程と、
前記ゲート電極上、前記ゲート側壁膜上、及び前記ソース/ドレイン領域上に金属膜を形成する工程と、
前記金属膜を異方性エッチング法により除去して、前記ゲート側壁膜の側面上のみに、前記素子分離領域と離隔した前記金属膜を残す工程と、
前記ソース/ドレイン領域上に残された前記金属膜をシリサイド化し、前記ソース/ドレイン領域上に前記素子分離領域と離隔したシリサイド膜を形成する工程と、
を具備することを特徴とする半導体装置の製造方法。 - 半導体基板に、素子が形成される素子領域を区画する素子分離領域を形成する工程と、
前記素子領域内の前記半導体基板上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上に、ゲート電極と前記ゲート電極上のキャップ膜を形成する工程と、
前記ゲート電極の両側の前記半導体基板の表面領域に、エクステンション領域を形成する工程と、
前記ゲート電極の両側面上及び前記キャップ膜の両側面上に、ゲート側壁膜を形成する工程と、
前記ゲート側壁膜の外側の前記半導体基板の表面領域に、ソース/ドレイン領域を形成する工程と、
前記ゲート電極上の前記キャップ膜を除去する工程と、
前記ゲート電極上、前記ゲート側壁膜上、及び前記ソース/ドレイン領域上に金属膜を形成する工程と、
前記金属膜を異方性エッチング法により除去して、前記ゲート側壁膜の側面上に前記素子分離領域と離隔した前記金属膜を残すと共に、前記ゲート電極上に前記金属膜を残す工程と、
前記ソース/ドレイン領域上及び前記ゲート電極上に残された前記金属膜をシリサイド化し、前記ソース/ドレイン領域上に前記素子分離領域と離隔した第1のシリサイド膜を形成すると共に、前記ゲート電極上に第2のシリサイド膜を形成する工程と、
を具備することを特徴とする半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003327653A JP4057985B2 (ja) | 2003-09-19 | 2003-09-19 | 半導体装置の製造方法 |
US10/917,405 US7265400B2 (en) | 2003-09-19 | 2004-08-13 | Semiconductor device including field-effect transistor using salicide (self-aligned silicide) structure and method of fabricating the same |
US11/838,679 US8017510B2 (en) | 2003-09-19 | 2007-08-14 | Semiconductor device including field-effect transistor using salicide (self-aligned silicide) structure and method of fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003327653A JP4057985B2 (ja) | 2003-09-19 | 2003-09-19 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005093863A JP2005093863A (ja) | 2005-04-07 |
JP4057985B2 true JP4057985B2 (ja) | 2008-03-05 |
Family
ID=34372878
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2003327653A Expired - Fee Related JP4057985B2 (ja) | 2003-09-19 | 2003-09-19 | 半導体装置の製造方法 |
Country Status (2)
Country | Link |
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US (2) | US7265400B2 (ja) |
JP (1) | JP4057985B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006295025A (ja) * | 2005-04-14 | 2006-10-26 | Sharp Corp | 半導体装置およびその製造方法 |
US7462524B1 (en) * | 2005-08-16 | 2008-12-09 | Advanced Micro Devices, Inc. | Methods for fabricating a stressed MOS device |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05304108A (ja) | 1992-04-24 | 1993-11-16 | Sony Corp | 半導体装置及び半導体装置の製造方法 |
JPH118387A (ja) | 1997-06-18 | 1999-01-12 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US6777759B1 (en) * | 1997-06-30 | 2004-08-17 | Intel Corporation | Device structure and method for reducing silicide encroachment |
JP3107032B2 (ja) * | 1998-03-09 | 2000-11-06 | 日本電気株式会社 | 半導体装置の製造方法 |
JPH11345966A (ja) | 1998-06-01 | 1999-12-14 | Denso Corp | 半導体装置及びその製造方法 |
US6165839A (en) * | 1998-06-08 | 2000-12-26 | Taiwan Semiconductor Manufacturing Company | Process to fabricate a cylindrical, capacitor structure under a bit line structure for a dynamic random access memory cell |
US6329287B1 (en) * | 1999-10-29 | 2001-12-11 | National Semiconductor Corporation | Process for manufacturing an integrated circuit structure with metal salicide regions and metal salicide exclusion regions |
US6287925B1 (en) * | 2000-02-24 | 2001-09-11 | Advanced Micro Devices, Inc. | Formation of highly conductive junctions by rapid thermal anneal and laser thermal process |
US6656764B1 (en) * | 2002-05-15 | 2003-12-02 | Taiwan Semiconductor Manufacturing Company | Process for integration of a high dielectric constant gate insulator layer in a CMOS device |
-
2003
- 2003-09-19 JP JP2003327653A patent/JP4057985B2/ja not_active Expired - Fee Related
-
2004
- 2004-08-13 US US10/917,405 patent/US7265400B2/en not_active Expired - Fee Related
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2007
- 2007-08-14 US US11/838,679 patent/US8017510B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20080286931A1 (en) | 2008-11-20 |
JP2005093863A (ja) | 2005-04-07 |
US20050067665A1 (en) | 2005-03-31 |
US7265400B2 (en) | 2007-09-04 |
US8017510B2 (en) | 2011-09-13 |
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