JP2005109389A - 半導体装置及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000009792 diffusion process Methods 0.000 claims abstract description 67
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229910021341 titanium silicide Inorganic materials 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 125000006850 spacer group Chemical group 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 239000010936 titanium Substances 0.000 abstract description 24
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 22
- 229910052719 titanium Inorganic materials 0.000 abstract description 22
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 238000001039 wet etching Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000012535 impurity Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910008486 TiSix Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000007523 nucleic acids Chemical class 0.000 description 1
- 102000039446 nucleic acids Human genes 0.000 description 1
- 108020004707 nucleic acids Proteins 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】図3(a)に示すように、全面にチタン(Ti)をスパッタすることによりチタン層8を形成する。これにより、ゲート電極3は開口部7aを介してチタン層8と接触し、P+型拡散層6a,6bはそれぞれ開口部7b,7cを介してチタン層8と接触する。その後、図3(b)に示すように熱処理を行うことにより、ゲート電極8及びP+型拡散層6a,6bと接触したチタン層8が部分的にシリサイド化され、ゲート電極3上の表面にチタンシリサイド層9a、P+型拡散層6a,6bの表面にそれぞれチタンシリサイド層9b,9cが形成される。そして、図3(c)に示すように、シリサイド化されていないシリサイドブロック層7上のチタン層8をウエットエッチングして除去する。
【選択図】 図3
Description
N型シリコン基板50上に、ゲート絶縁膜51を介してゲート電極52が形成されている。ゲート電極52の側壁にはサイドウオールスペーサ絶縁膜53が形成されている。また、P−型拡散層54a及びP+型拡散層54bから成るソース層54、P−型拡散層55a及びP+型拡散層55bから成るドレイン層55が形成されている。
そして、ゲート電極62上にチタンシリサイド層66aが形成され、P−型拡散層64a及びP+型拡散層64b上にチタンシリサイド層66bが形成され、P−型拡散層65a及びP+型拡散層65b上にチタンシリサイド層66cが形成されている。
Claims (8)
- 半導体基板と、
前記半導体基板上にゲート絶縁膜を介して形成されたゲート電極と、
前記ゲート電極に隣接して前記半導体基板の表面に形成された低濃度拡散層と、
前記ゲート電極から離れて前記半導体基板の表面に形成された高濃度拡散層と、
前記低濃度拡散層上に形成され、金属シリサイドの形成を阻止する金属シリサイドブロック層と、
前記低濃度拡散層上を除き、前記ゲート電極上及び前記高濃度拡散層上に形成された金属シリサイド層と、を有することを特徴とする半導体装置。 - 半導体基板と、
前記半導体基板上にゲート絶縁膜を介して形成されたゲート電極と、
前記ゲート電極の側壁に形成されたサイドウオールスペーサ絶縁膜と、
前記ゲート電極に隣接して前記半導体基板の表面に形成された低濃度拡散層と、
前記サイドウオールスペーサ絶縁膜から離れて前記半導体基板の表面に形成された高濃度拡散層と、
前記低濃度拡散層上を除き、前記ゲート電極上及び前記高濃度拡散層上に形成された金属シリサイド層と、を有することを特徴とする半導体装置。 - 前記低濃度拡散層上に金属シリサイドの形成を阻止する金属シリサイドブロック層を設けたことを特徴とする請求項1に記載の半導体装置。
- 前記金属シリサイド層は、チタンシリサイド層であることを特徴とする請求項2又は請求項3に記載の半導体装置。
- 半導体基板上にゲート絶縁膜を介してゲート電極を形成する工程と、
前記ゲート電極に隣接して前記半導体基板の表面に低濃度拡散層を形成する工程と、
前記ゲート電極から前記低濃度拡散層より離れて前記半導体基板の表面に高濃度拡散層を形成する工程と、
全面にシリサイドブロック層を形成する工程と、
前記ゲート電極及び前記高濃度拡散層上の前記シリサイドブロック層を選択的に除去して、前記ゲート電極及び前記高濃度拡散層の少なくとも一部を露出させる工程と、
全面に金属層を被着する工程と、
熱処理により前記ゲート電極及び前記高濃度拡散層と接触した前記金属層を反応させてシリサイド化し、前記ゲート電極上及び前記高濃度拡散層上に金属シリサイド層を形成する工程と、
前記シリサイドブロック層上のシリサイド化していない前記金属層を選択的に除去する工程と、を有することを特徴とする半導体装置の製造方法。 - 前記シリサイドブロック層は、シリコン酸化膜から成ること特徴とする請求項5に記載の半導体装置の製造方法。
- 半導体基板上にゲート絶縁膜を介してゲート電極を形成する工程と、
前記ゲート電極に隣接して前記半導体基板の表面に低濃度拡散層を形成する工程と、
前記ゲート電極から前記低濃度拡散層より離れて前記半導体基板の表面に高濃度拡散層を形成する工程と、
前記ゲート電極上及び前記高濃度拡散層上に選択的に金属層を形成する工程と、
熱処理により前記ゲート電極及び前記高濃度拡散層と接触した前記金属層を反応させてシリサイド化し、前記ゲート電極上及び前記高濃度拡散層上に金属シリサイド層を形成する工程と、を有することを特徴とする半導体装置の製造方法。 - 前記金属シリサイド層は、チタンシリサイド層であることを特徴とする請求項5、6、7のいずれかに記載の半導体装置の製造方法。
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Application Number | Priority Date | Filing Date | Title |
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JP2003344170A JP2005109389A (ja) | 2003-10-02 | 2003-10-02 | 半導体装置及びその製造方法 |
CN200410079728.4A CN1604340A (zh) | 2003-10-02 | 2004-09-17 | 半导体装置及其制造方法 |
KR1020040078182A KR100659619B1 (ko) | 2003-10-02 | 2004-10-01 | 반도체 장치의 제조 방법 |
US10/954,370 US7468303B2 (en) | 2003-10-02 | 2004-10-01 | Semiconductor device and manufacturing method thereof |
TW093129796A TWI260783B (en) | 2003-10-02 | 2004-10-01 | Semiconductor device and its manufacture method |
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JP2003344170A JP2005109389A (ja) | 2003-10-02 | 2003-10-02 | 半導体装置及びその製造方法 |
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JP2005109389A true JP2005109389A (ja) | 2005-04-21 |
JP2005109389A5 JP2005109389A5 (ja) | 2006-04-13 |
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US (1) | US7468303B2 (ja) |
JP (1) | JP2005109389A (ja) |
KR (1) | KR100659619B1 (ja) |
CN (1) | CN1604340A (ja) |
TW (1) | TWI260783B (ja) |
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US7615426B2 (en) * | 2005-02-22 | 2009-11-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | PMOS transistor with discontinuous CESL and method of fabrication |
JP4850470B2 (ja) | 2005-10-04 | 2012-01-11 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
KR100928504B1 (ko) * | 2007-10-19 | 2009-11-26 | 주식회사 동부하이텍 | 반도체 소자 및 반도체 소자의 제조방법 |
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US20100213507A1 (en) * | 2009-02-20 | 2010-08-26 | Ching-Chung Ko | Lateral bipolar junction transistor |
US20110065245A1 (en) * | 2009-09-13 | 2011-03-17 | Jei-Ming Chen | Method for fabricating mos transistor |
JP2011222955A (ja) * | 2010-03-26 | 2011-11-04 | Renesas Electronics Corp | 半導体装置及びその製造方法 |
CN102456556A (zh) * | 2010-10-18 | 2012-05-16 | 中芯国际集成电路制造(上海)有限公司 | 金属硅化物的形成方法 |
US8569171B2 (en) * | 2011-07-01 | 2013-10-29 | Globalfoundries Inc. | Mask-based silicidation for FEOL defectivity reduction and yield boost |
JP5927017B2 (ja) * | 2012-04-20 | 2016-05-25 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
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US5208472A (en) * | 1988-05-13 | 1993-05-04 | Industrial Technology Research Institute | Double spacer salicide MOS device and method |
US4949136A (en) * | 1988-06-09 | 1990-08-14 | University Of Connecticut | Submicron lightly doped field effect transistors |
JP2551127B2 (ja) * | 1989-01-07 | 1996-11-06 | 三菱電機株式会社 | Mis型半導体装置およびその製造方法 |
EP0739542B1 (en) * | 1994-01-12 | 2002-05-02 | Atmel Corporation | Input/output transistors with optimized esd protection |
US6100125A (en) * | 1998-09-25 | 2000-08-08 | Fairchild Semiconductor Corp. | LDD structure for ESD protection and method of fabrication |
JP3594550B2 (ja) * | 2000-11-27 | 2004-12-02 | シャープ株式会社 | 半導体装置の製造方法 |
JP2002353330A (ja) | 2001-05-25 | 2002-12-06 | Denso Corp | 半導体装置及びその製造方法 |
JP2003151991A (ja) | 2001-08-23 | 2003-05-23 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
KR20030058437A (ko) | 2001-12-31 | 2003-07-07 | 동부전자 주식회사 | 홈을 이용한 반도체 소자의 제조 방법 |
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US20050104135A1 (en) | 2005-05-19 |
TWI260783B (en) | 2006-08-21 |
US7468303B2 (en) | 2008-12-23 |
CN1604340A (zh) | 2005-04-06 |
KR100659619B1 (ko) | 2006-12-20 |
TW200514259A (en) | 2005-04-16 |
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