JP4850470B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP4850470B2 JP4850470B2 JP2005291097A JP2005291097A JP4850470B2 JP 4850470 B2 JP4850470 B2 JP 4850470B2 JP 2005291097 A JP2005291097 A JP 2005291097A JP 2005291097 A JP2005291097 A JP 2005291097A JP 4850470 B2 JP4850470 B2 JP 4850470B2
- Authority
- JP
- Japan
- Prior art keywords
- sidewall
- manufacturing
- semiconductor substrate
- semiconductor device
- channel misfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 118
- 238000004519 manufacturing process Methods 0.000 title claims description 53
- 239000000758 substrate Substances 0.000 claims description 66
- 229910052731 fluorine Inorganic materials 0.000 claims description 38
- 239000011737 fluorine Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 150000002500 ions Chemical class 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 229910021332 silicide Inorganic materials 0.000 claims description 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 5
- 229910052743 krypton Inorganic materials 0.000 claims description 5
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052754 neon Inorganic materials 0.000 claims description 5
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052691 Erbium Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 31
- 238000002513 implantation Methods 0.000 description 28
- 238000004140 cleaning Methods 0.000 description 16
- 238000005468 ion implantation Methods 0.000 description 14
- -1 fluorine ions Chemical class 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 230000001629 suppression Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823835—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes silicided or salicided gate conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823864—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6653—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Claims (18)
- (a)半導体基板上に、第1ゲート絶縁膜、第1ゲート電極、N型ソース領域、N型ドレイン領域、前記第1ゲート電極の側壁上および前記半導体基板上に形成された第1サイドウォール、および、前記第1サイドウォールを介して前記第1ゲート電極の側面上および前記半導体基板上に形成された第2サイドウォールを含むNチャネル型MISFET(Metal Insulator Semiconductor Field Effect Transistor)と、第2ゲート絶縁膜、第2ゲート電極、P型ソース領域、P型ドレイン領域、前記第2ゲート電極の側面上および前記半導体基板上に形成された前記第1サイドウォール、および、前記第1サイドウォールを介して前記第2ゲート電極の側面上および前記半導体基板上に形成された前記第2サイドウォールを含むPチャネル型MISFETとを形成する工程と、
(b)前記(a)工程後に、前記Pチャネル型MISFET、前記Nチャネル型MISFETおよび前記半導体基板の表面を覆うように、絶縁膜を形成する工程と、
(c)前記(b)工程後に、前記絶縁膜に対して選択的に異方性エッチングを行って、前記Pチャネル型MISFETの前記第1及び第2サイドウォールの側方、および、前記Nチャネル型MISFETの前記第1及び第2サイドウォールの側方に、第3サイドウォールを形成する工程と、
(d)前記(c)工程後に、前記Nチャネル型MISFETは覆わずに、前記Pチャネル型MISFETを選択的に覆うマスク層を形成する工程と、
(e)前記(d)工程後に、前記マスク層により前記Pチャネル型MISFETを覆いつつ、前記Nチャネル型MISFETの少なくとも前記N型ソース領域および前記N型ドレイン領域に、フッ素、シリコン、炭素、ゲルマニウム、ネオン、アルゴン及びクリプトンのうち少なくとも一種類のイオンを注入する工程と、
(f)前記(e)工程後に、前記第3サイドウォールを除去する工程と、
(g)前記(f)工程後に、前記第1ゲート電極、前記N型ソース領域、前記N型ドレイン領域、前記第2ゲート電極、前記P型ソース領域および前記P型ドレイン領域に、シリサイド化を行う工程とを備えることを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法であって、
前記シリサイド化は、ニッケル、チタン、コバルト、パラジウム、白金、エルビウムのうち少なくとも一種類を含む金属膜を用いて行われることを特徴とする半導体装置の製造方法。 - 請求項1または請求項2に記載の半導体装置の製造方法であって、
前記(f)工程後に、前記Nチャネル型MISFETにおいては、前記第2ゲート電極の側面からの前記第2サイドウォールの最大距離と、前記第2ゲート電極の側面からの前記第1サイドウォールの最大距離との差Bnは、前記半導体基板からの前記第1サイドウォールの高さと、前記半導体基板からの前記第2サイドウォールの高さとの差Anよりも小さいことを特徴とする半導体装置の製造方法。 - 請求項3に記載の半導体装置の製造方法であって、
前記(f)工程後に、前記Nチャネル型MISFETにおいては、前記半導体基板からの前記第1サイドウォールの高さは、前記半導体基板からの前記第2サイドウォールの高さよりも小さいことを特徴とする半導体装置の製造方法。 - 請求項3または請求項4に記載の半導体装置の製造方法であって、
前記(f)工程後に、前記Pチャネル型MISFETにおいては、前記第1ゲート電極の側面からの前記第2サイドウォールの最大距離と、前記第1ゲート電極の側面からの前記第1サイドウォールの最大距離との差Bpは、前記半導体基板からの前記第1サイドウォールの高さと、前記半導体基板からの前記第2サイドウォールの高さとの差Apよりも小さいことを特徴とする半導体装置の製造方法。 - 請求項5に記載の半導体装置の製造方法であって、
前記(f)工程後に、前記Pチャネル型MISFETにおいては、前記半導体基板からの前記第1サイドウォールの高さは、前記半導体基板からの前記第2サイドウォールの高さよりも大きいことを特徴とする半導体装置の製造方法。 - 請求項1〜6の何れか1項に記載の半導体装置の製造方法であって、
前記第1サイドウォールは、前記第2サイドウォールと異なる材料からなることを特徴とする半導体装置の製造方法。 - 請求項1〜7の何れか1項に記載の半導体装置の製造方法であって、
前記第1サイドウォールは、シリコン酸化膜からなることを特徴とする半導体装置の製造方法。 - 請求項1〜8の何れか1項に記載の半導体装置の製造方法であって、
前記第2サイドウォールは、シリコン窒化膜からなることを特徴とする半導体装置の製造方法。 - (a)半導体基板のPチャネル型MISFET(Metal Insulator Semiconductor Field Effect Transistor)形成領域上に第1ゲート絶縁膜を形成し、前記半導体基板のNチャネル型MISFET形成領域上に第2ゲート絶縁膜を形成する工程と、
(b)前記第1ゲート絶縁膜上に第1ゲート電極を形成し、前記第2ゲート絶縁膜上に第2ゲート電極を形成する工程と、
(c)前記Pチャネル型MISFET形成領域の前記半導体基板にP型LDD領域を形成する工程と、
(d)前記Nチャネル型MISFET形成領域の前記半導体基板にN型LDD領域を形成する工程と、
(e)前記Pチャネル型MISFET形成領域の前記半導体基板上および前記第1ゲートの側壁上に第1サイドウォールを形成し、前記Nチャネル型MISFET形成領域の前記半導体基板上および前記第2ゲートの側壁上に前記第1サイドウォールを形成する工程と、
(f)前記Pチャネル型MISFET形成領域の前記半導体基板上および前記第1ゲートの側壁上に前記第1サイドウォールを介して第2サイドウォールを形成し、前記Nチャネル型MISFET形成領域の前記半導体基板上および前記第2ゲートの側壁上に前記第1サイドウォールを介して前記第2サイドウォールを形成する工程と、
(g)前記Pチャネル型MISFET形成領域の前記半導体基板に前記P型LDD領域よりも高濃度のP型ソース領域およびP型ドレイン領域を形成する工程と、
(h)前記Nチャネル型MISFET形成領域の前記半導体基板に前記N型LDD領域よりも高濃度のN型ソース領域およびN型ドレイン領域を形成する工程と、
(i)前記(a)〜(h)工程後に、前記Pチャネル型MISFET形成領域の前記半導体基板上および前記第1ゲートの側壁上に前記第1及び第2サイドウォールを介して第3サイドウォールを形成し、前記Nチャネル型MISFET形成領域の前記半導体基板上および前記第2ゲートの側壁上に前記第1及び第2サイドウォールを介して前記第3サイドウォールを形成する工程と、
(j)前記(i)工程後に、前記Pチャネル型MISFET形成領域を選択的に覆うマスク層を形成する工程と、
(k)前記(j)工程後に、前記マスク層がある状態で、前記N型ソース領域および前記N型ドレイン領域に、フッ素、シリコン、炭素、ゲルマニウム、ネオン、アルゴン及びクリプトンのうち少なくとも一種類のイオンを注入する工程と、
(l)前記(k)工程後に前記Pチャネル型MISFET形成領域および前記Nチャネル型MISFET形成領域の前記第3サイドウォールを除去する工程と、
(m)前記(l)工程後に、前記第1ゲート電極、前記N型ソース領域、前記N型ドレイン領域、前記第2ゲート電極、前記P型ソース領域および前記P型ドレイン領域に、シリサイド化領域を形成する工程とを備えることを特徴とする半導体装置の製造方法。 - 請求項10に記載の半導体装置の製造方法であって、
前記シリサイド化領域は、ニッケル、チタン、コバルト、パラジウム、白金、エルビウムのうち少なくとも一種類を含む金属膜からなることを特徴とする半導体装置の製造方法。 - 請求項10または請求項11に記載の半導体装置の製造方法であって、
前記(l)工程後に、前記Nチャネル型MISFET形成領域においては、前記第2ゲート電極の側面からの前記第2サイドウォールの最大距離と、前記第2ゲート電極の側面からの前記第1サイドウォールの最大距離との差Bnは、前記半導体基板からの前記第1サイドウォールの高さと、前記半導体基板からの前記第2サイドウォールの高さとの差Anよりも小さいことを特徴とする半導体装置の製造方法。 - 請求項12に記載の半導体装置の製造方法であって、
前記(l)工程後に、前記Nチャネル型MISFET形成領域においては、前記半導体基板からの前記第1サイドウォールの高さは、前記半導体基板からの前記第2サイドウォールの高さよりも小さいことを特徴とする半導体装置の製造方法。 - 請求項12または請求項13に記載の半導体装置の製造方法であって、
前記(l)工程後に、前記Pチャネル型MISFET形成領域においては、前記第1ゲート電極の側面からの前記第2サイドウォールの最大距離と、前記第1ゲート電極の側面からの前記第1サイドウォールの最大距離との差Bpは、前記半導体基板からの前記第1サイドウォールの高さと、前記半導体基板からの前記第2サイドウォールの高さとの差Apよりも小さいことを特徴とする半導体装置の製造方法。 - 請求項14に記載の半導体装置の製造方法であって、
前記(l)工程後に、前記Pチャネル型MISFET形成領域においては、前記半導体基板からの前記第1サイドウォールの高さは、前記半導体基板からの前記第2サイドウォールの高さよりも大きいことを特徴とする半導体装置の製造方法。 - 請求項10〜15の何れか1項に記載の半導体装置の製造方法であって、
前記第1サイドウォールは、前記第2サイドウォールと異なる材料からなることを特徴とする半導体装置の製造方法。 - 請求項10〜16の何れか1項に記載の半導体装置の製造方法であって、
前記第1サイドウォールは、シリコン酸化膜からなることを特徴とする半導体装置の製造方法。 - 請求項10〜17の何れか1項に記載の半導体装置の製造方法であって、
前記第2サイドウォールは、シリコン窒化膜からなることを特徴とする半導体装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005291097A JP4850470B2 (ja) | 2005-10-04 | 2005-10-04 | 半導体装置の製造方法 |
US11/537,208 US7696050B2 (en) | 2005-10-04 | 2006-09-29 | Method of manufacturing semiconductor device carrying out ion implantation before silicide process |
CN2006101729368A CN1976007B (zh) | 2005-10-04 | 2006-09-30 | 半导体器件及其制造方法 |
US12/727,334 US7872314B2 (en) | 2005-10-04 | 2010-03-19 | Method of manufacturing semiconductor device carrying out ion implantation before silicide process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005291097A JP4850470B2 (ja) | 2005-10-04 | 2005-10-04 | 半導体装置の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011103545A Division JP5384556B2 (ja) | 2011-05-06 | 2011-05-06 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007103642A JP2007103642A (ja) | 2007-04-19 |
JP4850470B2 true JP4850470B2 (ja) | 2012-01-11 |
Family
ID=37902438
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005291097A Active JP4850470B2 (ja) | 2005-10-04 | 2005-10-04 | 半導体装置の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7696050B2 (ja) |
JP (1) | JP4850470B2 (ja) |
CN (1) | CN1976007B (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007157870A (ja) * | 2005-12-02 | 2007-06-21 | Renesas Technology Corp | 半導体装置及びその製造方法 |
JP2008016475A (ja) * | 2006-07-03 | 2008-01-24 | Renesas Technology Corp | 半導体装置 |
JP5608554B2 (ja) | 2007-07-19 | 2014-10-15 | コーニンクレッカ フィリップス エヌ ヴェ | 無線通信システムにおけるチャネル・バンドリングによるリンク適応 |
JP2009076731A (ja) * | 2007-09-21 | 2009-04-09 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP2009088069A (ja) * | 2007-09-28 | 2009-04-23 | Panasonic Corp | 半導体装置及びその製造方法 |
JP2009130009A (ja) * | 2007-11-21 | 2009-06-11 | Renesas Technology Corp | 半導体装置およびその製造方法 |
CN101572251B (zh) * | 2008-04-30 | 2011-08-24 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件、n型MOS晶体管及其制作方法 |
JP2011222857A (ja) * | 2010-04-13 | 2011-11-04 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
US10644130B2 (en) * | 2012-10-25 | 2020-05-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal-oxide-semiconductor field-effect transistor with spacer over gate |
US9941388B2 (en) * | 2014-06-19 | 2018-04-10 | Globalfoundries Inc. | Method and structure for protecting gates during epitaxial growth |
JP6334370B2 (ja) * | 2014-11-13 | 2018-05-30 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
CN109087864B (zh) * | 2017-06-14 | 2021-10-15 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
US20210399094A1 (en) * | 2020-06-22 | 2021-12-23 | Stmicroelectronics (Crolles 2) Sas | Electronic security component |
CN116314287B (zh) * | 2022-11-25 | 2024-06-18 | 北京大学 | 自对准二维半导体轻掺杂漏制备方法及二维半导体晶体管 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2797988B2 (ja) * | 1994-12-14 | 1998-09-17 | 日本電気株式会社 | 半導体装置の製造方法 |
JPH09199720A (ja) * | 1996-01-22 | 1997-07-31 | Oki Electric Ind Co Ltd | Mos型半導体装置とその製造方法 |
JP2980057B2 (ja) * | 1997-04-30 | 1999-11-22 | 日本電気株式会社 | 半導体装置の製造方法 |
JPH10335651A (ja) * | 1997-05-28 | 1998-12-18 | Oki Electric Ind Co Ltd | Mosfet及びmosfetの製造方法 |
JPH1187703A (ja) | 1997-09-10 | 1999-03-30 | Toshiba Corp | 半導体装置の製造方法 |
JP4236722B2 (ja) * | 1998-02-05 | 2009-03-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JPH11330271A (ja) * | 1998-05-15 | 1999-11-30 | Nec Corp | 半導体装置の製造方法 |
JP3523151B2 (ja) * | 1999-09-17 | 2004-04-26 | Necエレクトロニクス株式会社 | Mosトランジスタの製造方法 |
JP2002231938A (ja) * | 2001-01-30 | 2002-08-16 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
US6830979B2 (en) * | 2001-05-23 | 2004-12-14 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating semiconductor device |
US7176137B2 (en) * | 2003-05-09 | 2007-02-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for multiple spacer width control |
US6991979B2 (en) * | 2003-09-22 | 2006-01-31 | International Business Machines Corporation | Method for avoiding oxide undercut during pre-silicide clean for thin spacer FETs |
JP2005109389A (ja) | 2003-10-02 | 2005-04-21 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP4377721B2 (ja) * | 2004-03-11 | 2009-12-02 | 株式会社東芝 | 半導体装置の製造方法 |
US7112497B2 (en) * | 2004-06-25 | 2006-09-26 | Texas Instruments Incorporated | Multi-layer reducible sidewall process |
JP2008016475A (ja) | 2006-07-03 | 2008-01-24 | Renesas Technology Corp | 半導体装置 |
-
2005
- 2005-10-04 JP JP2005291097A patent/JP4850470B2/ja active Active
-
2006
- 2006-09-29 US US11/537,208 patent/US7696050B2/en active Active
- 2006-09-30 CN CN2006101729368A patent/CN1976007B/zh active Active
-
2010
- 2010-03-19 US US12/727,334 patent/US7872314B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20070077736A1 (en) | 2007-04-05 |
JP2007103642A (ja) | 2007-04-19 |
US20100171183A1 (en) | 2010-07-08 |
US7696050B2 (en) | 2010-04-13 |
CN1976007A (zh) | 2007-06-06 |
US7872314B2 (en) | 2011-01-18 |
CN1976007B (zh) | 2010-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4850470B2 (ja) | 半導体装置の製造方法 | |
JP6275559B2 (ja) | 半導体装置およびその製造方法 | |
US8202776B2 (en) | Method for protecting a gate structure during contact formation | |
KR101055708B1 (ko) | Cmos 기술에서 듀얼 살리사이드를 형성하는 방법 | |
US7843013B2 (en) | Semiconductor device and method for fabricating the same | |
US20060166422A1 (en) | Sige nickel barrier structure employed in a cmos device to prevent excess diffusion of nickel used in the silicide material | |
US8404533B2 (en) | Metal gate transistor and method for fabricating the same | |
US7923365B2 (en) | Methods of forming field effect transistors having stress-inducing sidewall insulating spacers thereon | |
JP2009152342A (ja) | 半導体装置の製造方法 | |
KR101757748B1 (ko) | 반도체 장치의 제조 방법 | |
JP2005109389A (ja) | 半導体装置及びその製造方法 | |
JP2002353449A (ja) | 半導体素子の製造方法 | |
JP2009283586A (ja) | 半導体装置の製造方法 | |
KR100685898B1 (ko) | 반도체 소자의 제조방법 | |
JP5384556B2 (ja) | 半導体装置 | |
TWI509702B (zh) | 具有金屬閘極之電晶體及其製作方法 | |
JP3362722B2 (ja) | 半導体装置の製造方法 | |
JP2006339327A (ja) | 半導体装置及びその製造方法 | |
KR100685904B1 (ko) | 풀리 실리사이드 게이트 및 그것을 가진 반도체 소자의제조 방법 | |
JP2006114681A (ja) | 半導体装置及びその製造方法 | |
JP2005142539A (ja) | 半導体装置及び半導体装置の製造方法 | |
JP2008192683A (ja) | 半導体装置及びその製造方法 | |
JP2006140290A (ja) | 半導体装置およびその製造方法 | |
US20070148940A1 (en) | Method for manufacturing a semiconductor device | |
KR100628218B1 (ko) | 반도체 소자의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080911 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20080911 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20100524 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110317 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110322 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110506 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110705 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110824 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20111018 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20111019 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4850470 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20141028 Year of fee payment: 3 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |