KR100748906B1 - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

Info

Publication number
KR100748906B1
KR100748906B1 KR1020060033688A KR20060033688A KR100748906B1 KR 100748906 B1 KR100748906 B1 KR 100748906B1 KR 1020060033688 A KR1020060033688 A KR 1020060033688A KR 20060033688 A KR20060033688 A KR 20060033688A KR 100748906 B1 KR100748906 B1 KR 100748906B1
Authority
KR
South Korea
Prior art keywords
film
insulating layer
gate electrode
layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020060033688A
Other languages
English (en)
Korean (ko)
Other versions
KR20060108537A (ko
Inventor
츠요시 세라타
슈지 에노모토
Original Assignee
샤프 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 샤프 가부시키가이샤 filed Critical 샤프 가부시키가이샤
Publication of KR20060108537A publication Critical patent/KR20060108537A/ko
Application granted granted Critical
Publication of KR100748906B1 publication Critical patent/KR100748906B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H10D84/0137—Manufacturing their gate conductors the gate conductors being silicided
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0147—Manufacturing their gate sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020060033688A 2005-04-14 2006-04-13 반도체 장치 및 그 제조 방법 Expired - Fee Related KR100748906B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00116618 2005-04-14
JP2005116618A JP2006295025A (ja) 2005-04-14 2005-04-14 半導体装置およびその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020070050115A Division KR100754262B1 (ko) 2005-04-14 2007-05-23 반도체 장치 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR20060108537A KR20060108537A (ko) 2006-10-18
KR100748906B1 true KR100748906B1 (ko) 2007-08-13

Family

ID=37077886

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020060033688A Expired - Fee Related KR100748906B1 (ko) 2005-04-14 2006-04-13 반도체 장치 및 그 제조 방법
KR1020070050115A Expired - Fee Related KR100754262B1 (ko) 2005-04-14 2007-05-23 반도체 장치 및 그 제조 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020070050115A Expired - Fee Related KR100754262B1 (ko) 2005-04-14 2007-05-23 반도체 장치 및 그 제조 방법

Country Status (5)

Country Link
US (1) US20060252196A1 (enExample)
JP (1) JP2006295025A (enExample)
KR (2) KR100748906B1 (enExample)
CN (2) CN101425540A (enExample)
TW (1) TW200707586A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100755671B1 (ko) * 2006-07-14 2007-09-05 삼성전자주식회사 균일한 두께의 니켈 합금 실리사이드층을 가진 반도체 소자및 그 제조 방법
JP5315779B2 (ja) * 2008-05-09 2013-10-16 富士通セミコンダクター株式会社 半導体装置の製造方法
KR101080200B1 (ko) * 2009-04-14 2011-11-07 주식회사 하이닉스반도체 반도체 메모리 장치 및 그 리프레쉬 제어 방법
KR102301249B1 (ko) * 2015-11-16 2021-09-10 삼성전자주식회사 반도체 장치
JP7034834B2 (ja) * 2018-05-30 2022-03-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR102675935B1 (ko) * 2019-12-16 2024-06-18 삼성전자주식회사 반도체 소자

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08204193A (ja) * 1995-01-27 1996-08-09 Ricoh Co Ltd 半導体装置の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW232751B (en) * 1992-10-09 1994-10-21 Semiconductor Energy Res Co Ltd Semiconductor device and method for forming the same
US6060387A (en) * 1995-11-20 2000-05-09 Compaq Computer Corporation Transistor fabrication process in which a contact metallization is formed with different silicide thickness over gate interconnect material and transistor source/drain regions
US5731239A (en) * 1997-01-22 1998-03-24 Chartered Semiconductor Manufacturing Pte Ltd. Method of making self-aligned silicide narrow gate electrodes for field effect transistors having low sheet resistance
JPH11233770A (ja) * 1997-09-02 1999-08-27 Sony Corp 半導体装置の製造方法
US6306712B1 (en) * 1997-12-05 2001-10-23 Texas Instruments Incorporated Sidewall process and method of implantation for improved CMOS with benefit of low CGD, improved doping profiles, and insensitivity to chemical processing
JP3168992B2 (ja) * 1998-09-08 2001-05-21 日本電気株式会社 半導体装置の製造方法
US20010053572A1 (en) * 2000-02-23 2001-12-20 Yoshinari Ichihashi Semiconductor device having opening and method of fabricating the same
US6803318B1 (en) * 2000-09-14 2004-10-12 Cypress Semiconductor Corp. Method of forming self aligned contacts
US6376320B1 (en) * 2000-11-15 2002-04-23 Advanced Micro Devices, Inc. Method for forming field effect transistor with silicides of different thickness and of different materials for the source/drain and the gate
KR100396469B1 (ko) * 2001-06-29 2003-09-02 삼성전자주식회사 반도체 장치의 게이트 전극 형성 방법 및 이를 이용한불휘발성 메모리 장치의 제조방법
JP3657915B2 (ja) * 2002-01-31 2005-06-08 株式会社東芝 半導体装置および半導体装置の製造方法
US6657244B1 (en) * 2002-06-28 2003-12-02 International Business Machines Corporation Structure and method to reduce silicon substrate consumption and improve gate sheet resistance during silicide formation
CN1270362C (zh) * 2002-09-18 2006-08-16 上海宏力半导体制造有限公司 形成自行对准金属硅化物的方法
JP4057985B2 (ja) * 2003-09-19 2008-03-05 株式会社東芝 半導体装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08204193A (ja) * 1995-01-27 1996-08-09 Ricoh Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
KR20070062957A (ko) 2007-06-18
TW200707586A (en) 2007-02-16
CN100501948C (zh) 2009-06-17
US20060252196A1 (en) 2006-11-09
KR20060108537A (ko) 2006-10-18
JP2006295025A (ja) 2006-10-26
CN101425540A (zh) 2009-05-06
CN1848392A (zh) 2006-10-18
TWI308779B (enExample) 2009-04-11
KR100754262B1 (ko) 2007-09-03

Similar Documents

Publication Publication Date Title
US20070222000A1 (en) Method of forming silicided gate structure
KR100754262B1 (ko) 반도체 장치 및 그 제조 방법
JP2007165558A (ja) 半導体装置およびその製造方法
US7371646B2 (en) Manufacture of insulated gate type field effect transistor
KR100731096B1 (ko) 반도체 소자 및 이의 제조방법
JP2007250734A (ja) シリコン酸化膜形成法、容量素子の製法及び半導体装置の製法
KR100589490B1 (ko) 반도체 소자의 제조 방법
JP2006294800A (ja) 半導体装置の製造方法
US20020098634A1 (en) Method for making an embedded memory MOS
KR100485893B1 (ko) 반도체 소자의 제조방법
US7416968B2 (en) Methods of forming field effect transistors having metal silicide gate electrodes
JP4122193B2 (ja) 半導体装置の製造方法
US20070069312A1 (en) Semiconductor device and method for fabricating the same
KR100404231B1 (ko) 반도체 소자의 제조방법
KR100591181B1 (ko) 반도체 소자 및 그 제조방법
KR100713927B1 (ko) 반도체 소자의 제조방법
US7700451B2 (en) Method of manufacturing a transistor
KR100546059B1 (ko) 반도체 제조 방법
KR100552859B1 (ko) 반도체 소자의 제조 방법
KR20080002480A (ko) 반도체 소자의 제조방법
KR100668859B1 (ko) 반도체 소자의 제조방법
JP2006080218A (ja) 半導体装置の製造方法及び半導体装置
JP2010027950A (ja) 半導体装置及びその製造方法
CN100517752C (zh) 半导体器件及其制造方法
JP2008124061A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

A107 Divisional application of patent
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20120724

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20130719

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20140808

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20140808

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000