JP2006269808A5 - - Google Patents

Download PDF

Info

Publication number
JP2006269808A5
JP2006269808A5 JP2005086674A JP2005086674A JP2006269808A5 JP 2006269808 A5 JP2006269808 A5 JP 2006269808A5 JP 2005086674 A JP2005086674 A JP 2005086674A JP 2005086674 A JP2005086674 A JP 2005086674A JP 2006269808 A5 JP2006269808 A5 JP 2006269808A5
Authority
JP
Japan
Prior art keywords
impurity region
region
impurity
channel
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005086674A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006269808A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005086674A priority Critical patent/JP2006269808A/ja
Priority claimed from JP2005086674A external-priority patent/JP2006269808A/ja
Priority to TW095107527A priority patent/TWI313056B/zh
Priority to US11/376,414 priority patent/US7612378B2/en
Priority to KR1020060026540A priority patent/KR100727714B1/ko
Priority to CNB2006100680458A priority patent/CN100495730C/zh
Publication of JP2006269808A publication Critical patent/JP2006269808A/ja
Publication of JP2006269808A5 publication Critical patent/JP2006269808A5/ja
Pending legal-status Critical Current

Links

JP2005086674A 2005-03-24 2005-03-24 半導体装置および画像表示装置 Pending JP2006269808A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2005086674A JP2006269808A (ja) 2005-03-24 2005-03-24 半導体装置および画像表示装置
TW095107527A TWI313056B (en) 2005-03-24 2006-03-07 Semiconductor device and image display apparatus
US11/376,414 US7612378B2 (en) 2005-03-24 2006-03-16 Semiconductor device with multiple impurity regions and image display apparatus
KR1020060026540A KR100727714B1 (ko) 2005-03-24 2006-03-23 반도체 장치 및 화상 표시 장치
CNB2006100680458A CN100495730C (zh) 2005-03-24 2006-03-24 半导体器件以及图像显示装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005086674A JP2006269808A (ja) 2005-03-24 2005-03-24 半導体装置および画像表示装置

Publications (2)

Publication Number Publication Date
JP2006269808A JP2006269808A (ja) 2006-10-05
JP2006269808A5 true JP2006269808A5 (enExample) 2007-02-22

Family

ID=37015739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005086674A Pending JP2006269808A (ja) 2005-03-24 2005-03-24 半導体装置および画像表示装置

Country Status (5)

Country Link
US (1) US7612378B2 (enExample)
JP (1) JP2006269808A (enExample)
KR (1) KR100727714B1 (enExample)
CN (1) CN100495730C (enExample)
TW (1) TWI313056B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI418036B (zh) * 2006-12-05 2013-12-01 Semiconductor Energy Lab 半導體裝置及其製造方法
JP5041255B2 (ja) * 2007-04-18 2012-10-03 三菱電機株式会社 半導体薄膜の製造方法
WO2009096148A1 (ja) * 2008-01-29 2009-08-06 Sharp Kabushiki Kaisha 半導体装置及びその製造方法
KR101274706B1 (ko) * 2008-05-16 2013-06-12 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
KR101634411B1 (ko) * 2008-10-31 2016-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로, 표시 장치 및 전자 장치
KR102181301B1 (ko) 2009-07-18 2020-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
JP5811556B2 (ja) * 2011-03-18 2015-11-11 セイコーエプソン株式会社 半導体装置の製造方法
KR102022051B1 (ko) 2012-11-14 2019-09-18 삼성디스플레이 주식회사 박막트랜지스터 및 이를 포함하는 유기발광 화소
JP2015125997A (ja) * 2013-12-25 2015-07-06 キヤノン株式会社 撮像装置、撮像システム、および、撮像装置の製造方法。
JP6523197B2 (ja) 2016-03-18 2019-05-29 東芝メモリ株式会社 不揮発性半導体記憶装置およびその製造方法
JP7117974B2 (ja) * 2018-10-30 2022-08-15 キヤノン株式会社 表示装置および電子機器
CN109785795A (zh) * 2019-03-11 2019-05-21 中国计量大学 一种采用ldd结构的硅基oled微显示器件驱动电路
WO2022091348A1 (ja) * 2020-10-30 2022-05-05 シャープ株式会社 表示装置および表示装置の製造方法
CN116670834A (zh) * 2021-12-27 2023-08-29 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、显示基板
CN119381387B (zh) * 2024-12-26 2025-05-16 浙江创芯集成电路有限公司 半导体ldd扩展宽度测试结构及其形成方法、计算方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227320A (en) * 1991-09-10 1993-07-13 Vlsi Technology, Inc. Method for producing gate overlapped lightly doped drain (goldd) structure for submicron transistor
US5340761A (en) * 1991-10-31 1994-08-23 Vlsi Technology, Inc. Self-aligned contacts with gate overlapped lightly doped drain (goldd) structure
US5196357A (en) * 1991-11-18 1993-03-23 Vlsi Technology, Inc. Method of making extended polysilicon self-aligned gate overlapped lightly doped drain structure for submicron transistor
AU652682B2 (en) 1992-01-09 1994-09-01 Miles Inc. Combined use of chemicals and microbials in termite control
US5358879A (en) * 1993-04-30 1994-10-25 Loral Federal Systems Company Method of making gate overlapped lightly doped drain for buried channel devices
US6501098B2 (en) * 1998-11-25 2002-12-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
JP4531175B2 (ja) * 1998-12-03 2010-08-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6545359B1 (en) 1998-12-18 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Wiring line and manufacture process thereof, and semiconductor device and manufacturing process thereof
JP4372879B2 (ja) 1999-01-29 2009-11-25 株式会社半導体エネルギー研究所 半導体装置
JP3403115B2 (ja) 1999-04-02 2003-05-06 シャープ株式会社 半導体装置の製造方法
JP2001196594A (ja) * 1999-08-31 2001-07-19 Fujitsu Ltd 薄膜トランジスタ、液晶表示用基板及びその製造方法
US6646287B1 (en) * 1999-11-19 2003-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with tapered gate and insulating film
JP4493779B2 (ja) * 2000-01-31 2010-06-30 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
TW513753B (en) * 2000-03-27 2002-12-11 Semiconductor Energy Lab Semiconductor display device and manufacturing method thereof
JP2001345448A (ja) 2000-05-31 2001-12-14 Toshiba Corp 薄膜トランジスタの製造方法および薄膜トランジスタ
JP4850328B2 (ja) 2000-08-29 2012-01-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100439345B1 (ko) * 2000-10-31 2004-07-07 피티플러스(주) 폴리실리콘 활성층을 포함하는 박막트랜지스터 및 제조 방법
CN1423841A (zh) * 2000-12-21 2003-06-11 皇家菲利浦电子有限公司 薄膜晶体管
JP4926329B2 (ja) 2001-03-27 2012-05-09 株式会社半導体エネルギー研究所 半導体装置およびその作製方法、電気器具
TW480735B (en) * 2001-04-24 2002-03-21 United Microelectronics Corp Structure and manufacturing method of polysilicon thin film transistor
JP2003332578A (ja) * 2002-05-09 2003-11-21 Sharp Corp 薄膜トランジスタ及びその製造方法並びにこれを用いた液晶表示装置
TW538529B (en) 2002-07-15 2003-06-21 Univ Nat Chiao Tung Thin film transistor structure and the manufacturing method thereof
JP2005072531A (ja) * 2003-08-28 2005-03-17 Sharp Corp 薄膜トランジスタを備えた装置およびその製造方法
JP2005333107A (ja) * 2004-04-21 2005-12-02 Mitsubishi Electric Corp 半導体装置、画像表示装置および半導体装置の製造方法
JP2005311037A (ja) * 2004-04-21 2005-11-04 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP4641741B2 (ja) * 2004-05-28 2011-03-02 三菱電機株式会社 半導体装置

Similar Documents

Publication Publication Date Title
JP2009017608A5 (enExample)
US10593416B2 (en) Shift register, driving method, gate driving circuit and display device
CN103886838B (zh) 像素补偿电路、阵列基板及显示装置
US8575620B2 (en) Circuit board and display device
JP2006269808A5 (enExample)
US9601050B2 (en) External compensation sensing circuit and sensing method thereof, display device
JP2008009393A5 (enExample)
JP2008287032A5 (enExample)
CN102831860A (zh) 移位寄存器及其驱动方法、栅极驱动器及显示装置
JP2013077816A5 (enExample)
JP2005037842A5 (enExample)
CN102831861A (zh) 移位寄存器及其驱动方法、栅极驱动器及显示装置
EP2071394A4 (en) ACTIVE MATRIX SUBSTRATE AND LIQUID CRYSTAL DISPLAY ARRANGEMENT EQUIPPED THEREWITH
JP2007207413A5 (enExample)
JP2007065615A5 (enExample)
US9099859B2 (en) Electro-static discharge protection circuit, array substrate and display apparatus
US9401122B2 (en) Display panel
JP7203611B2 (ja) 画素補償回路ユニット、画素回路および表示装置
JP4232600B2 (ja) バッファ回路および表示装置
DE602005005451D1 (de) Aktivmatrix-Schaltung, Aktivmatrix-Anzeige und deren Herstellungsverfahren
CN102460711B (zh) 半导体装置
TW200717817A (en) Liquid crystal display device and method for manufacturing the same
CN104752471A (zh) 有机发光二极管显示装置
US9040991B2 (en) Pixel structure of organic light emitting device
JP2006293354A5 (enExample)