JP2005037842A5 - - Google Patents
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- Publication number
- JP2005037842A5 JP2005037842A5 JP2003277119A JP2003277119A JP2005037842A5 JP 2005037842 A5 JP2005037842 A5 JP 2005037842A5 JP 2003277119 A JP2003277119 A JP 2003277119A JP 2003277119 A JP2003277119 A JP 2003277119A JP 2005037842 A5 JP2005037842 A5 JP 2005037842A5
- Authority
- JP
- Japan
- Prior art keywords
- tft
- power supply
- supply terminal
- display device
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 16
- 239000000758 substrate Substances 0.000 claims 8
- 239000003990 capacitor Substances 0.000 claims 4
- 239000004973 liquid crystal related substance Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003277119A JP4480968B2 (ja) | 2003-07-18 | 2003-07-18 | 表示装置 |
| US10/884,945 US7511709B2 (en) | 2003-07-18 | 2004-07-07 | Display device |
| CNB2004100712318A CN100559245C (zh) | 2003-07-18 | 2004-07-16 | 显示器 |
| US12/371,936 US8310474B2 (en) | 2003-07-18 | 2009-02-17 | Display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003277119A JP4480968B2 (ja) | 2003-07-18 | 2003-07-18 | 表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005037842A JP2005037842A (ja) | 2005-02-10 |
| JP2005037842A5 true JP2005037842A5 (enExample) | 2006-08-17 |
| JP4480968B2 JP4480968B2 (ja) | 2010-06-16 |
Family
ID=34056181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003277119A Expired - Fee Related JP4480968B2 (ja) | 2003-07-18 | 2003-07-18 | 表示装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US7511709B2 (enExample) |
| JP (1) | JP4480968B2 (enExample) |
| CN (1) | CN100559245C (enExample) |
Families Citing this family (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4393812B2 (ja) * | 2003-07-18 | 2010-01-06 | 株式会社半導体エネルギー研究所 | 表示装置及び電子機器 |
| JP4480968B2 (ja) * | 2003-07-18 | 2010-06-16 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US7888702B2 (en) | 2005-04-15 | 2011-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of the display device |
| KR101143004B1 (ko) | 2005-06-13 | 2012-05-11 | 삼성전자주식회사 | 시프트 레지스터 및 이를 포함하는 표시 장치 |
| GB2434686A (en) | 2006-01-31 | 2007-08-01 | Sharp Kk | A drive circuit including a voltage booster |
| CN100547416C (zh) * | 2006-03-16 | 2009-10-07 | 统宝光电股份有限公司 | 平面显示器的扫描检测装置与方法 |
| US8330492B2 (en) | 2006-06-02 | 2012-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| JP5207164B2 (ja) * | 2006-08-22 | 2013-06-12 | Nltテクノロジー株式会社 | 電源回路及び該電源回路を備えた電子機器 |
| JP5116277B2 (ja) | 2006-09-29 | 2013-01-09 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器 |
| TWI850180B (zh) | 2006-09-29 | 2024-07-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| TWI330922B (en) * | 2006-12-06 | 2010-09-21 | Princeton Technology Corp | Boost circuit and level shifter |
| TW200826055A (en) * | 2006-12-06 | 2008-06-16 | Gigno Technology Co Ltd | Display apparatus and manufacturing method thereof |
| JP5364293B2 (ja) * | 2007-06-01 | 2013-12-11 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法およびプラズマcvd装置 |
| JP5216446B2 (ja) * | 2007-07-27 | 2013-06-19 | 株式会社半導体エネルギー研究所 | プラズマcvd装置及び表示装置の作製方法 |
| JP5058084B2 (ja) * | 2007-07-27 | 2012-10-24 | 株式会社半導体エネルギー研究所 | 光電変換装置の作製方法及びマイクロ波プラズマcvd装置 |
| KR101455304B1 (ko) * | 2007-10-05 | 2014-11-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막트랜지스터, 및 박막트랜지스터를 가지는 표시장치, 및그들의 제작방법 |
| JP5572307B2 (ja) | 2007-12-28 | 2014-08-13 | 株式会社半導体エネルギー研究所 | 光電変換装置の製造方法 |
| JP5436017B2 (ja) * | 2008-04-25 | 2014-03-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8049215B2 (en) * | 2008-04-25 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| KR100916906B1 (ko) | 2008-04-25 | 2009-09-09 | 삼성모바일디스플레이주식회사 | 버퍼 및 그를 이용한 유기전계발광표시장치 |
| WO2009157573A1 (en) * | 2008-06-27 | 2009-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, semiconductor device and electronic device |
| WO2010058581A1 (ja) * | 2008-11-20 | 2010-05-27 | シャープ株式会社 | シフトレジスタ |
| KR101579082B1 (ko) | 2008-12-23 | 2015-12-22 | 삼성디스플레이 주식회사 | 게이트 구동회로 및 이의 구동 방법 |
| US8330702B2 (en) | 2009-02-12 | 2012-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Pulse output circuit, display device, and electronic device |
| CN103730515B (zh) * | 2009-03-09 | 2016-08-17 | 株式会社半导体能源研究所 | 半导体器件 |
| CN102024410B (zh) | 2009-09-16 | 2014-10-22 | 株式会社半导体能源研究所 | 半导体装置及电子设备 |
| US9715845B2 (en) | 2009-09-16 | 2017-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
| KR101882350B1 (ko) | 2009-10-09 | 2018-07-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| WO2011043215A1 (en) | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Shift register and display device and driving method thereof |
| CN116343705B (zh) | 2009-10-16 | 2025-08-26 | 株式会社半导体能源研究所 | 显示设备 |
| KR101943293B1 (ko) | 2009-10-16 | 2019-01-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 표시 장치 및 전자 장치 |
| KR102329497B1 (ko) * | 2009-11-13 | 2021-11-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 이 표시 장치를 구비한 전자 기기 |
| US8598586B2 (en) * | 2009-12-21 | 2013-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and manufacturing method thereof |
| US8383434B2 (en) | 2010-02-22 | 2013-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and manufacturing method thereof |
| DE112011106185B3 (de) * | 2010-03-02 | 2023-05-04 | Semiconductor Energy Laboratory Co., Ltd. | Impulssignal-Ausgangsschaltung und Schieberegister |
| KR101838628B1 (ko) | 2010-03-02 | 2018-03-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 펄스 신호 출력 회로 및 시프트 레지스터 |
| KR20230173747A (ko) | 2010-05-21 | 2023-12-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 펄스 출력 회로, 시프트 레지스터, 및 표시 장치 |
| WO2012029767A1 (ja) * | 2010-09-02 | 2012-03-08 | シャープ株式会社 | 半導体回路及び表示装置 |
| US8647919B2 (en) * | 2010-09-13 | 2014-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting display device and method for manufacturing the same |
| TWI538218B (zh) | 2010-09-14 | 2016-06-11 | 半導體能源研究所股份有限公司 | 薄膜電晶體 |
| DE112012002065T5 (de) | 2011-05-13 | 2014-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Anzeigevorrichtung |
| US8718224B2 (en) | 2011-08-05 | 2014-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Pulse signal output circuit and shift register |
| JP6226518B2 (ja) | 2011-10-24 | 2017-11-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102230370B1 (ko) * | 2014-08-06 | 2021-03-23 | 엘지디스플레이 주식회사 | 표시장치 |
| WO2017115208A1 (en) | 2015-12-28 | 2017-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Device, television system, and electronic device |
| JP2018093483A (ja) * | 2016-11-29 | 2018-06-14 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置及び電子機器 |
| JP7554673B2 (ja) | 2018-12-20 | 2024-09-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5091334A (en) | 1980-03-03 | 1992-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JPS5713777A (en) | 1980-06-30 | 1982-01-23 | Shunpei Yamazaki | Semiconductor device and manufacture thereof |
| US5859443A (en) | 1980-06-30 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US5262350A (en) | 1980-06-30 | 1993-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Forming a non single crystal semiconductor layer by using an electric current |
| US5849601A (en) | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
| US7115902B1 (en) | 1990-11-20 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
| KR950013784B1 (ko) | 1990-11-20 | 1995-11-16 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터 |
| JP2791422B2 (ja) * | 1990-12-25 | 1998-08-27 | 株式会社 半導体エネルギー研究所 | 電気光学装置およびその作製方法 |
| US5514879A (en) | 1990-11-20 | 1996-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Gate insulated field effect transistors and method of manufacturing the same |
| JP2838318B2 (ja) | 1990-11-30 | 1998-12-16 | 株式会社半導体エネルギー研究所 | 感光装置及びその作製方法 |
| US7576360B2 (en) | 1990-12-25 | 2009-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device which comprises thin film transistors and method for manufacturing the same |
| US7098479B1 (en) | 1990-12-25 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
| KR960001611B1 (ko) | 1991-03-06 | 1996-02-02 | 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 | 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법 |
| US6943764B1 (en) | 1994-04-22 | 2005-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit for an active matrix display device |
| JP3402400B2 (ja) | 1994-04-22 | 2003-05-06 | 株式会社半導体エネルギー研究所 | 半導体集積回路の作製方法 |
| TW283230B (enExample) | 1994-08-16 | 1996-08-11 | Handotai Energy Kenkyusho Kk | |
| JP2894229B2 (ja) * | 1995-01-13 | 1999-05-24 | 株式会社デンソー | マトリクス型液晶表示装置 |
| TW455725B (en) | 1996-11-08 | 2001-09-21 | Seiko Epson Corp | Driver of liquid crystal panel, liquid crystal device, and electronic equipment |
| US6218219B1 (en) * | 1997-09-29 | 2001-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
| KR100265767B1 (ko) | 1998-04-20 | 2000-09-15 | 윤종용 | 저전력 구동회로 및 구동방법 |
| JP3846057B2 (ja) | 1998-09-03 | 2006-11-15 | セイコーエプソン株式会社 | 電気光学装置の駆動回路及び電気光学装置並びに電子機器 |
| EP1020839A3 (en) | 1999-01-08 | 2002-11-27 | Sel Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device and driving circuit therefor |
| JP2000259111A (ja) * | 1999-01-08 | 2000-09-22 | Semiconductor Energy Lab Co Ltd | 半導体表示装置およびその駆動回路 |
| JP2000268969A (ja) | 1999-03-17 | 2000-09-29 | Tdk Corp | 有機el素子 |
| JP4352598B2 (ja) | 2000-08-24 | 2009-10-28 | ソニー株式会社 | 液晶表示装置および携帯端末 |
| US7053874B2 (en) * | 2000-09-08 | 2006-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and driving method thereof |
| JP2002175036A (ja) * | 2000-12-07 | 2002-06-21 | Sanyo Electric Co Ltd | アクティブマトリクス型表示装置 |
| TW525216B (en) | 2000-12-11 | 2003-03-21 | Semiconductor Energy Lab | Semiconductor device, and manufacturing method thereof |
| US6788108B2 (en) | 2001-07-30 | 2004-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP4869516B2 (ja) | 2001-08-10 | 2012-02-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US7109961B2 (en) * | 2002-03-13 | 2006-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Electric circuit, latch circuit, display apparatus and electronic equipment |
| JP3888949B2 (ja) * | 2002-08-23 | 2007-03-07 | 松下電器産業株式会社 | 半導体集積回路 |
| JP4393812B2 (ja) | 2003-07-18 | 2010-01-06 | 株式会社半導体エネルギー研究所 | 表示装置及び電子機器 |
| JP4480968B2 (ja) * | 2003-07-18 | 2010-06-16 | 株式会社半導体エネルギー研究所 | 表示装置 |
-
2003
- 2003-07-18 JP JP2003277119A patent/JP4480968B2/ja not_active Expired - Fee Related
-
2004
- 2004-07-07 US US10/884,945 patent/US7511709B2/en not_active Expired - Fee Related
- 2004-07-16 CN CNB2004100712318A patent/CN100559245C/zh not_active Expired - Fee Related
-
2009
- 2009-02-17 US US12/371,936 patent/US8310474B2/en not_active Expired - Fee Related
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