JP4480968B2 - 表示装置 - Google Patents

表示装置 Download PDF

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Publication number
JP4480968B2
JP4480968B2 JP2003277119A JP2003277119A JP4480968B2 JP 4480968 B2 JP4480968 B2 JP 4480968B2 JP 2003277119 A JP2003277119 A JP 2003277119A JP 2003277119 A JP2003277119 A JP 2003277119A JP 4480968 B2 JP4480968 B2 JP 4480968B2
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JP
Japan
Prior art keywords
tft
power supply
display device
supply terminal
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003277119A
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English (en)
Japanese (ja)
Other versions
JP2005037842A5 (enExample
JP2005037842A (ja
Inventor
潤 小山
馨太郎 今井
慎志 前川
誠 古野
理 中村
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2003277119A priority Critical patent/JP4480968B2/ja
Priority to US10/884,945 priority patent/US7511709B2/en
Priority to CNB2004100712318A priority patent/CN100559245C/zh
Publication of JP2005037842A publication Critical patent/JP2005037842A/ja
Publication of JP2005037842A5 publication Critical patent/JP2005037842A5/ja
Priority to US12/371,936 priority patent/US8310474B2/en
Application granted granted Critical
Publication of JP4480968B2 publication Critical patent/JP4480968B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0404—Matrix technologies
    • G09G2300/0408—Integration of the drivers onto the display substrate
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0289—Details of voltage level shifters arranged for use in a driving circuit
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Shift Register Type Memory (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Control Of El Displays (AREA)
JP2003277119A 2003-07-18 2003-07-18 表示装置 Expired - Fee Related JP4480968B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003277119A JP4480968B2 (ja) 2003-07-18 2003-07-18 表示装置
US10/884,945 US7511709B2 (en) 2003-07-18 2004-07-07 Display device
CNB2004100712318A CN100559245C (zh) 2003-07-18 2004-07-16 显示器
US12/371,936 US8310474B2 (en) 2003-07-18 2009-02-17 Display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003277119A JP4480968B2 (ja) 2003-07-18 2003-07-18 表示装置

Publications (3)

Publication Number Publication Date
JP2005037842A JP2005037842A (ja) 2005-02-10
JP2005037842A5 JP2005037842A5 (enExample) 2006-08-17
JP4480968B2 true JP4480968B2 (ja) 2010-06-16

Family

ID=34056181

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003277119A Expired - Fee Related JP4480968B2 (ja) 2003-07-18 2003-07-18 表示装置

Country Status (3)

Country Link
US (2) US7511709B2 (enExample)
JP (1) JP4480968B2 (enExample)
CN (1) CN100559245C (enExample)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4393812B2 (ja) * 2003-07-18 2010-01-06 株式会社半導体エネルギー研究所 表示装置及び電子機器
JP4480968B2 (ja) * 2003-07-18 2010-06-16 株式会社半導体エネルギー研究所 表示装置
US7888702B2 (en) * 2005-04-15 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the display device
KR101143004B1 (ko) 2005-06-13 2012-05-11 삼성전자주식회사 시프트 레지스터 및 이를 포함하는 표시 장치
GB2434686A (en) 2006-01-31 2007-08-01 Sharp Kk A drive circuit including a voltage booster
CN100547416C (zh) * 2006-03-16 2009-10-07 统宝光电股份有限公司 平面显示器的扫描检测装置与方法
US8330492B2 (en) 2006-06-02 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
JP5207164B2 (ja) * 2006-08-22 2013-06-12 Ｎｌｔテクノロジー株式会社 電源回路及び該電源回路を備えた電子機器
TWI857906B (zh) 2006-09-29 2024-10-01 日商半導體能源研究所股份有限公司 半導體裝置
JP5116277B2 (ja) 2006-09-29 2013-01-09 株式会社半導体エネルギー研究所 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器
TW200826055A (en) * 2006-12-06 2008-06-16 Gigno Technology Co Ltd Display apparatus and manufacturing method thereof
TWI330922B (en) * 2006-12-06 2010-09-21 Princeton Technology Corp Boost circuit and level shifter
JP5364293B2 (ja) * 2007-06-01 2013-12-11 株式会社半導体エネルギー研究所 表示装置の作製方法およびプラズマｃｖｄ装置
JP5216446B2 (ja) * 2007-07-27 2013-06-19 株式会社半導体エネルギー研究所 プラズマｃｖｄ装置及び表示装置の作製方法
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KR101455304B1 (ko) * 2007-10-05 2014-11-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막트랜지스터, 및 박막트랜지스터를 가지는 표시장치, 및그들의 제작방법
JP5572307B2 (ja) 2007-12-28 2014-08-13 株式会社半導体エネルギー研究所 光電変換装置の製造方法
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JP5436017B2 (ja) * 2008-04-25 2014-03-05 株式会社半導体エネルギー研究所 半導体装置
KR101602252B1 (ko) * 2008-06-27 2016-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터, 반도체장치 및 전자기기
WO2010058581A1 (ja) * 2008-11-20 2010-05-27 シャープ株式会社 シフトレジスタ
KR101579082B1 (ko) 2008-12-23 2015-12-22 삼성디스플레이 주식회사 게이트 구동회로 및 이의 구동 방법
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KR101790704B1 (ko) 2009-10-09 2017-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 시프트 레지스터 및 표시 장치
KR102065330B1 (ko) 2009-10-16 2020-01-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 제작 방법
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KR102072118B1 (ko) * 2009-11-13 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 이 표시 장치를 구비한 전자 기기
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KR101798645B1 (ko) 2010-03-02 2017-11-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 펄스 신호 출력 회로 및 시프트 레지스터
KR20230173747A (ko) 2010-05-21 2023-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 펄스 출력 회로, 시프트 레지스터, 및 표시 장치
WO2012029767A1 (ja) * 2010-09-02 2012-03-08 シャープ株式会社 半導体回路及び表示装置
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TWI538218B (zh) 2010-09-14 2016-06-11 半導體能源研究所股份有限公司 薄膜電晶體
KR102760694B1 (ko) * 2011-05-13 2025-01-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
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KR102230370B1 (ko) * 2014-08-06 2021-03-23 엘지디스플레이 주식회사 표시장치
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JP2018093483A (ja) * 2016-11-29 2018-06-14 株式会社半導体エネルギー研究所 半導体装置、表示装置及び電子機器
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US7511709B2 (en) 2009-03-31
CN1577028A (zh) 2005-02-09
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